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back to the top of all publications2020
back to the year overview- S. Moench, R. Reiner, P. Waltereit, J. Hueckelheim, D. Meder, R. Quay, O. Ambacher, I. Kallfass
A 600V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices
2020 11th International Conference on Integrated Power Electronics Systems (CIPS 2020), pages: 1 - 6 - St. Moench, R. Reiner, P. Waltereit, St. Müller, R. Quay, O. Ambacher, I. Kallfass
A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), pages: 254 - 257 - F. Thome, E. Ture, A. Leuther, F. Schäfer, A. Navarrini, P. Serres, O. Ambacher
A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers
2020 IEEE/MTT-S International Microwave Symposium (IMS), pages: 193 - 196 - M. Basler, St. Moench, R. Reiner, P. Waltereit, R. Quay, I. Kallfass, O. Ambacher
A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), pages: 274 - 277 - M. Weiß, C. Friesicke, R. Quay, O. Ambacher
A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation
2020 IEEE/MTT-S International Microwave Symposium (IMS), pages: 952 - 955 - B. Gashi, L. John, D. Meier, M. Rösch, A. Tessmann, A. Leuther, H. Massler, M. Schlechtweg, O. Ambacher
Broadband and High-Gain 400-GHz InGaAs mHEMT Medium-Power Amplifier S-MMIC
2020 IEEE/MTT-S International Microwave Symposium (IMS), pages: 484 - 487 - A. Ding, L. Kirste, Y. Lu, R. Driad, N. Kurz, V. Lebedev, T. Christoph, N.M. Feil, R. Lozar, T. Metzger, O. Ambacher, A. Zukauskaite
Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N 11 2 ¯ 0 thin films
2020 Appl Phys Lett, volume: 116, issue: 10Download file - S. Leone, R. Fornari, M. Bosi, V. Montedoro, L. Kirste, P. Doering, F. Benkhelifa, M. Prescher, C. Manz, V. Polyakov, O. Ambacher
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
2020 Journal of Crystal Growth, volume: 534Download file - T. Kemmer, M. Dammann, M. Baeumler, V. Polyakov, P. Brückner, H. Konstanzer, R. Quay, O. Ambacher
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On-and Off-State Stress
2020 IEEE International Reliability Physics Symposium (IRPS), pages: 1 - 6 - M. Ćwikliński, P. Brückner, S. Leone, S. Krause, C. Friesicke, H. Maßler, R. Quay, O. Ambacher
First Demonstration of G-Band Broadband GaN Power Amplifier MMICs Operating Beyond 200 GHz
2020 IEEE/MTT-S International Microwave Symposium (IMS), pages: 1117 - 1120 - D. Urban, O. Ambacher, C. Elsässer
First-principles calculation of electroacoustic properties of wurtzite (Al, Sc) N
2020 arXiv:2002.08143 - P. Doering, R. Driad, S. Leone, S. Mueller, P. Waltereit, L. Kirste, V. Polyakov, M. Mikulla, O. Ambacher
Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures
2020 Phys Status Solidi A - P. Reinke, F. Benkhelifa, L. Kirste, H. Czap, L. Pinti, V. Zürbig, V. Cimalla, C. Nebel, O. Ambacher
Influence of Different Surface Morphologies on the Performance of High-Voltage, Low-Resistance Diamond Schottky Diodes
2020 IEEE T Electron Dev, volume: 67, issue: 6, pages: 2471 - 2477 - M. Basler, R. Reiner, S. Moench, P. Waltereit, R. Quay, I. Kallfass, O. Ambacher
Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier with Low Turn-On Voltage
2020 IEEE Electr Device L - F.Thome, A.Leuther, O.Ambacher
Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology
2020 IEEE Microwave and Wireless Components Letters - J. Ligl, S. Leone, C. Manz, L. Kirste, P. Doering, T. Fuchs, M. Prescher, O. Ambacher
Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
2020 J Appl Phys, volume: 127, issue: 19 - V.Lebedev, T.Yoshikawa, C.Schreyvogel, L.Kirste, J.Weippert, M.Kunzer, A.Graff, O.Ambacher
Microstructural and optical emission properties of diamond multiply twinned particles
2020 Journal of Applied Physics - S. Moench, S. Müller, R. Reiner, P. Waltereit, H. Czap, M. Basler, J. Hückelheim, L. Kirste, I. Kallfass, R. Quay, O. Ambacher
Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer
2020 Phys Status Solidi A - M. Basler, S. Moench, R. Reiner, P. Waltereit, R. Quay, I. Kallfass, O. Ambacher
Monolithic Integration of Inductive Components in a GaN-on-Si Technology
2020 11th International Conference on Integrated Power Electronics Systems, Berlin, pages: 1 - 6 - F. Heinz, F. Thome, A. Leuther, O. Ambacher
Noise Performance of Sub-100-nm Metamorphic HEMT Technologies
2020 IEEE/MTT-S International Microwave Symposium (IMS), pages: 293 - 296 - S.Leone, P.Brueckner, L.Kirste, P.Doering, T.Fuchs, S.Mueller, M.Prescher, R.Quay, O.Ambacher
Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN
2020 physica status solidi (b) - R. Reiner, Th. Gerrer, B. Weiss, P. Waltereit, St. Moench, D. Meder, M. Sinnwell, M. Dammann, R. Quay, O. Ambacher
Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), pages: 286 - 289
2019
back to the year overview- Maciej Cwiklinski, Peter Brückner, Stefano Leone, Christian Friesicke, Roger Lozar, Hermann Maßler, Rüdiger Quay, Oliver Ambacher
190-GHz G-band GaN amplifier MMICs with 40GHz of bandwidth
2019 IEEE, pages: 1257 - 1260Download file - A.Dyck, M.Kuri, M.Roesch, A.Tessmann, O.Ambacher
A Dielectric-Filled Cavity-Backed Lens-Coupled Dipole Antenna at 100 GHz
2019 IEEE Radio and Wireless Symposium (RWS), pages: 1 - 3 - M.Basler, S.Moench, R.Reiner, P.Waltereit, R.Quay, I.Kallfass, O.Ambacher
A GaN-on-Si-Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode Control
2019 PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, pages: 1 - 6Download file - M. Basler, S. Moench, R. Reiner, P. Waltereit, R. Quay, I. Kallfass, O. Ambacher
A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses
2019 IEEE, pages: 93 - 98Download file - A.Dyck, M.Roesch, A.Tessmann, A.Leuther, M.Kuri, S.Wagner, B.Gashi, J.Schaefer, O.Ambacher
A Transmitter System-in-Package at 300 GHz With an Off-Chip Antenna and GaAs-Based MMICs
2019 IEEE T Thz Sci Techn, volume: 9, issue: 3, pages: 335 - 344 - Lars Watschke, Thorsten Passow, Frank Fuchs, Lutz Kirste, Rachid Driad, Frank Rutz, Stefano Leone, Robert Rehm, Oliver Ambacher
AlGaN avalanche Schottky diodes with high Al-content
2019 Jpn J Appl Phys, volume: 58, page: SCCC11Download file - R.Amirpour, D.Schwantuschke, P.Brueckner, R.Quay, O.Ambacher
AlGaN/GaN High Electron-mobility Varactors on Silicon Substrate
2019 12th German Microwave Conference (GeMiC), pages: 244 - 247Download file - S. Moench, R. Reiner, P. Waltereit, D. Meder, M. Basler, R. Quay, O. Ambacher, I. Kallfass
Asymmetrical Substrate-Biasing Effects at up to 350V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-Bridges
2019 IEEE, pages: 28 - 35Download file - M. Ćwikliński, P.Brueckner, S.Leone, C.Friesicke, H.Maßler, R.Lozar, S.Wagner, R.Quay, O.Ambacher
D-Band and G-Band High-Performance GaN Power Amplifier MMICs
2019 IEEE T Microw Theory, volume: 67, issue: 12, pages: 5080 - 5089 - S.Roscher, R.Hoffmann, O.Ambacher
Determination of the graphene-graphite ratio of graphene powder by Raman 2D band symmetry analysis
2019 J Anal Methods Chem, pages: 1224 - 1228 - R.Reiner, V.Zuebig, L.Pinti, P.Reinke, D.Meder, S.Moench, F.Benkhelifa, R.Quay, V.Cimalla, C.Nebel, O.Ambacher
Diamond Schottky-Diode in a Non-Isolated Buck Converter
2019 PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, pages: 1 - 5Download file - S.Leone, F.Benkhelifa, L.Kirste, C.Manz, R.Quay, O.Ambacher
Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
2019 J Appl Phys, volume: 125, issue: 23, supplement: 235701 - A.Ding, N.Kurz, R.Driad, Y.Lu, R.Lozar, T.Christoph, L.Kirste, O.Ambacher, A.Žukauskaitė
Experimental determination of Al1-xScxN thin film thermo-electro-acoustic properties up to 140°C by using SAW resonators
2019 IEEE International Ultrasonics Symposium (IUS), Kobe, Japan, pages: 710 - 715Download file - N.Kurz, A.Ding, D.Urban, Y.Lu, L.Kirste, N.Feil, A.Žukauskaitė, O.Ambacher
Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators
2019 J Appl Phys, volume: 126, issue: 7, supplement: 075106 - M.Baeumler, Y.Lu, N.Kurz, L.Kirste, M.Prescher, T.Christoph, J.Wagner, A.Žukauskaitė, O.Ambacher
Finite Element Analysis of SAW Propagation Characteristics in c-plane (0001) and a-plane (11-20) AlScN Thin Films
2019 IEEE International Ultrasonics Symposium (IUS), Kobe, Japan, pages: 2588 - 2591Download file - Vadim Lebedev, Taro Yoshikawa, Christian Giese, Lutz Kirste, Agnė Žukauskaitė, Andreas Graff, Frank Meyer, Frank Burmeister, Oliver Ambacher
Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth
2019 J Appl Phys, volume: 125, issue: 7, page: 075305Download file - S.Roscher, R.Hoffmann, M.Prescher, P.Knittel, O.Ambacher
High voltage electrochemical exfoliation of graphite for high-yield graphene production
2019 Rsc Adv, volume: 9, issue: 50, pages: 29305 - 29311 - Felix Heinz, Dirk Schwantuschke, Arnulf Leuther, Oliver Ambacher
Highly Scalable Distributed High Electron Mobility Transistor Model
2019 IEEE, pages: 1286 - 1288Download file - T.Yoshikawa, D.Herrling, F.Meyer, F.Burmeister, C.Nebel, O.Ambacher, V.Lebedev
Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis
2019 J Vac Sci Technol A - Stefan Moench, R.Reiner, P.Waltereit, R.Quay, O.Ambacher, I.Kallfass
Integrated Current Sensing in GaN Power ICs
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pages: 111 - 114Download file - K.Frei, B.Trejo-Hernàndez, S.Schuett, L.Kirste, M.Prescher, R.Aidam, S.Mueller, P.Waltereit, O.Ambacher, M.Fiederle
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
2019 Jpn J Appl Phys, volume: 58, page: SC1045 - R.Amipour, D.Schwantuschke, F.van Raay, P.Brueckner, R.Quay, O.Ambacher
Large-Signal Modeling of a Scalable High-Q AlGaN/GaN High Electron-Mobility Varactor
2019 IEEE T Microw Theory, pages: 922 - 927 - R.Aidam, O.Ambacher, E.Diwo, B.Godejohann, L.Kirste, T.Lim, R.Quay, P.Waltereit
MBE of III-Nitride Semiconductors for Electronic Devices
2019 Molecular Beam Epitaxy: Materials and Device Applications - S.Leone, J.Ligl, C.Manz, L.Kirste, T.Fuchs, H.Menner, M.Prescher, J.Wiegert, A.Žukauskaitė, R.Quay, O.Ambacher
Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride
2019 Phys Status Solidi-r - Martina Baeumler, Yuan Lu, Nicolas Kurz, Lutz Kirste, Mario Prescher, Tim Christoph, Joachim Wagner, Agnė Žukauskaitė, Oliver Ambacher
Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41
2019 J Appl Phys, volume: 126, issue: 4, page: 045715Download file - F.Heinz, D.Schwantuschke, M.Ohlrogge, A.Leuther, O.Ambacher
RF-Noise Model Extraction Procedure for Distributed Multiport Models
2019 12th German Microwave Conference (GeMiC), pages: 260 - 263Download file - F.Thome, A.Leuther, F.Heinz, O.Ambacher
W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology
2019 IEEE MTT-S International Microwave Symposium (IMS), pages: 168 - 171Download file
2018
back to the year overview- F.Thome, A.Leuther, J.D.Gallego, F.Schafer, M.Schlechtweg, O.Ambacher
70-116-GHz LNAs in 35-nm and 50-nm Gate-Length Metamorphic HEMT Technologies for Cryogenic and Room-Temperature Operation
2018 IEEE MTT-S International Microwave Symposium Digest, issue: 6, supplement: 8439685, pages: 1495 - 1498Download file - A.Dyck, M.Roesch, A.Tessmann, A.Leuther, M.Kuri, H.Maßler, S.Wagner, D.Meder, B.Weismann-Thaden, M.Schlechtweg, O.Ambacher
A 300 GHz microstrip multilayered antenna on quartz substrate
2018 International Workshop on Antenna Technology (iWAT), pages: 1 - 3Download file - B.Amado-Rey, Y.Campo-Roca, C.Friesicke, F.vanRaay, H.Massler, A.Leuther, O.Ambacher
A G-Band Broadband Balanced Power Amplifier Module Based on Cascode mHEMTs
2018 IEEE Microwave and Wireless Components Letters, volume: 28, issue: 10, pages: 924 - 926 - M.Ćwikliński, C.Friesicke, F.van Raay, H.Massler, R.Quay, O.Ambacher
A Novel Type of Broadband Radial Stub
2018 2018 48th European Microwave Conference (EuMC), Madrid, pages: 1093 - 1096Download file - B.Amado-Rey, Y.Campos-Roca, F.van Raay, C.Friesicke, S.Wagner, H.Massler, A.Leuther, O.Ambacher
Analysis and Development of Submillimeter-Wave Stacked-FET Power Amplifier MMICs in 35-nm mHEMT Technology
2018 IEEE T Thz Sci Techn, volume: 8, issue: 3, pages: 357 - 364 - B.Amado-Rey, Y.Campos-Roca, C.Friesicke, F.van Raay, H.Massler, A.Leuther, O.Ambacher
Analysis of 4-way divider MMICs in GaAs technology for H-band applications
2018 11th German Microwave Conference (GeMiC), pages: 327 - 330Download file - L.Hahn, F.Fuchs, L.Kirste, R.Driad, F.Rutz, T.Passow, K.Koehler, R.Rehm, O.Ambacher
Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
2018 Appl Phys Lett, volume: 112, issue: 15, supplement: 151102 - N.Kurz, F.Parsapour, V.Pashchenko, L.Kirste, V.Lebedev, P.Muralt, O.Ambacher, N.Pascal
Determination of Elastic and Piezoelectric Properties of Al0.84Sc0.16N Thin Films
2018 IEEE International Ultrasonics Symposium (IUS), Kobe, Japan, pages: 1 - 5 - R.Amirpour, S.Krause, R.Quay, O.Ambacher
Dynamic Load Modulated Low-Voltage GaN PA Using Novel Low-Loss GaN Varactors
2018 48th European Microwave Conference (EuMC), Madrid, pages: 5 - 8 - Y.Lu, M.Reusch, N.Kurz, A.Ding, T.Christoph, M.Prescher, L.Kirste, O.Ambacher, A.Žukauskaitė
Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films
2018 APL Publishing, volume: 6, issue: 7 - A.Amado-Rey, Y.Campos-Roca, C.Friesicke, S.Wagner, O.Ambacher
GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifier
2018 IEEE T Microw Theory, volume: 67, issue: 1, pages: 78 - 85 - M.Knapp, R.Hoffmann, V.Lebedev, V.Cimalla, O.Ambacher
Graphene as an active virtually massless top electrode for RF solidly mounted bulk acoustic wave (SMR-BAW) resonators
2018 Nanotechnology, volume: 29, issue: 10, supplement: 105302 - E.Derguti, E.Ture, S.Krause, D.Schwantuschke, R.Quay, O.Ambacher
High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies
2018 2018 48th European Microwave Conference (EuMC), Madrid, pages: 1233 - 1236 - S.Moench, B.Weiss, R.Reiner, P.Waltereit, R.Quay, O.Ambacher, I.Kallfass et al.
Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges
2018 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, GA, pages: 242 - 246 - A. Ding, M. Reusch, Y. Lu, N. Kurz, R. Lozar, T. Christoph, R. Driad, O. Ambacher, A. Zukauskaite
Investigation of temperature characteristics and substrate influence on AlScN-based SAW resonators
2018 IEEE, pages: 1 - 9Download file - B.Gashi, S.Krause, R.Quay, C.Fager, O.Ambacher
Investigations of Active Antenna Doherty Power Amplifier Modules Under Beam-Steering Mismatch
2018 IEEE Microwave and Wireless Components Letters, volume: 99, pages: 1 - 3 - R.Reiner, P.Waltereit, S.Moench, M.Dammann, B.Weiss, R.Quay, O.Ambacher
Multi-Stage Cascode in High-Voltage AlGaN/GaN-on-Si Technology
2018 Multi-Stage Cascode in High-Voltage AlGaN/GaN, pages: 237 - 241 - R.Reiner, B.Weiss, D.Meder, P.Waltereit, T.Gerrer, R.Quay, C.Vockenberger, O.Ambacher
PCB-Embedding for GaN-on-Si Power Devices and ICs
2018 CIPS 2018, 10th International Conference on Integrated Power Electronics Systems, pages: 1 - 6 - F.Heinz, D.Schwantuschke, A.Leuther, A.Tessmann, M.Ohlrogge, R.Quay, O.Ambacher
RF-Noise Modeling of InGaAs Metamorphic HEMTs and MOSFETs
2018 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, pages: 150 - 153 - M.Weiß, C.Friesicke, R.Quay, O.Ambacher
Riemann-Pump based RF-Power DACs in GaN Technology for 5G Base Stations
2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G), Dublin, pages: 1 - 3 - B.Amado-Rey, A.Tessmann, Y.Campos.Roca, H.Massler, A.Leuther, O.Ambacher
Spurious Mode Suppression in the Design of GCPW Submillimeter-wave Power Amplifiers
2018 48th European Microwave Conference (EuMC), Madrid, pages: 851 - 854 - F.van Raay, D.Schwantuschke, A.Leuther, P.Brückner, D.Peschel, R.Quay, M.Schlechtweg, O.Ambacher
State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs
2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, pages: 1 - 225 - M.Reusch, K.Holc, V.Lebedev, N.Kurz, A.Zukauskaite, O.Ambacher
Temperature Cross-sensitivity of AlN-based Flexural Plate Wave Sensors
2018 IEEE Sens J, volume: 18, issue: 19, pages: 7810 - 7818 - N.Kurz, Y.Lu, L.Kirste, M.Reusch, A.Žukauskaitė, V.Lebedev, O.Ambacher
Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films
2018 Phys Status Solidi A, volume: 215, issue: 13, supplement: 1700831 - S.Moench, R.Reiner, B.Weiss, P.Waltereit, R.Quay, T.Kaden, O.Ambacher, I.Kallfass
Towards Highly-Integrated High-Voltage Multi-MHz GaN-on-Si Power ICs and Modules
2018 PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy ManagementDownload file - T. Gerrer, V. Cimalla, P. Waltereit, S. Müller, F. Benkhelifa, T. Maier, H. Czap, O. Ambacher, R. Quay
Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
2018 Int J Microw Wirel T, volume: 10, issue: 5-6, pages: 666 - 673 - T. Kemmer, M. Dammann, M. Baeumler, P. Brückner, H. Konstanzer, R. Quay, O. Ambacher
Voltage-and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors
2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA, pages: 1 - 6 - F.Thome, E.Ture, P.Brueckner, R.Quay, O.Ambacher
W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
2018 11th German Microwave Conference (GeMiC), pages: 331 - 334
2017
back to the year overview- B.Godejohann, E.Ture, S.Mueller, M.Prescher, L.Kirste, R.Aidam
AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
2017 Phys Status Solidi B, volume: 254, issue: 8, supplement: 1600715 - F.Thome, O.Ambacher
A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
2017 IEEE MTT-S International Microwave Symposium (IMS), pages: 1695 - 1698 - J.Stehle, A.K.Samaro, U.Krishnamoorathy, O.Ambacher
Atomic layer deposited P-type nickel oxide and cobalt oxide for ethanol gas sensing
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Kaohsiung, pages: 1504 - 1507 - F.Thome, A.Leuther, M.Schlechtweg, O.Ambacher
Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells
2017 IEEE T Microw Theory, volume: 66, issue: 3, pages: 1312 - 1318 - F.Thome, A.Leuther, H.Massler, M.Schlechtweg, O.Ambacher
Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
2017 IEEE MTT-S International Microwave Symposium (IMS), pages: 752 - 755 - E.Ture, M.Musser, A.Huelsmann, R.Quay, O.Ambacher
Demonstration of an RF front-end based on GaN HEMT technology
2017 Sensors, and Command, Control, Communications, and Intelligence, volume: 10184 - M.Weiss, C.Friesicke, T.Metzger, E.Schmidhammer, R.Quay, O.Ambacher
Design, Realization, and Evaluation of a Riemann Pump in GaN Technology
2017 IEEE Microw Wirel Co, volume: 27, issue: 7, pages: 672 - 674 - J.Stehle, A.K.Samarao, G.Yama, U.Krishnamoorthy, O.Ambacher
Development of a Silicon-Only Capacitive Dew Point Sensor
2017 IEEE Sens J, volume: 17, issue: 22, pages: 7223 - 7230 - S.Moench, R.Reiner, B.Weiss, P.Waltereit, R.Quay, O.Ambacher, I.Kallfass
Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
2017 5th Workshop on Wide Bandgap Power Devices and Applications, pages: 257 - 264 - E.Ture, P.Brueckner, M.Alsharef, R.Granzner, F.Schwierz, R.Quay, O.Ambacher
First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
2017 IEEE MTT-S International Microwave Symposium (IMS), pages: 35 - 37 - M.Reusch, K.Hole, A.Žukauskaitė, V.Lebedev, N.Kurz, O.Ambacher
Flexural plate wave sensors with buried IDT for sensing in liquids
2017 IEEE Sens J, pages: 1 - 3 - F.Thome, O.Ambacher
Highly Isolating and Broadband Single-Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz
2017 IEEE T Microw Theory, volume: 66, issue: 4, pages: 1998 - 2009 - R.Reiner, P.Waltereit, B.Weiss, R.Quay, O.Ambacher
Investigation of GaN-HEMTs in Reverse Conduction
2017 PCIM Europe; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, pages: 1 - 8 - M.Reusch, S.Cherneva, Y.Lu, A.Žukauskaitė, L.Kirste, K.Holc, M.Datcheva
Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices
2017 Appl Surf Sci, volume: 407, pages: 307 - 314 - R.Reiner, P.Waltereit, B.Weiss, S.Moench, M.Wespel, S.Müller, R.Quay, O.Ambacher
Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
2017 IET Power Electronics, volume: 11, issue: 4, pages: 681 - 688 - V.Lebedev, T.Liser, T.Yoshikawa, M.Reusch, D. Iankov, C.Giese
Nanodiamond resonators fabricated on 8 ″Si substrates using adhesive wafer bonding
2017 J Micromech Microeng, volume: 27, issue: 6, supplement: 065011 - B.Weiss, R.Reiner, P.Waltereit, R.Quay, O.Ambacher
Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
2017 5th Workshop on Wide Bandgap Power Devices and Applications, pages: 398 - 403 - S.Jauss, K.Hallaceli, S.Mansfeld, S.Schwaiger, W.Daves, O.Ambacher
Reliability analysis of LPCVD SiN gate dielectric for AlGaN/GaN MIS-HEMTs
2017 IEEE T Electron Dev, volume: 64, issue: 5, pages: 2298 - 2305 - B.Weiss, R.Reiner, V.Polyakov, P.Waltereit, R.Quay, O.Ambacher, D.Maksimović
Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip
2017 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pages: 265 - 272 - D.Bleh, M.Rosch, M.Kuri, A.Dyck, A.Tessmann, A.Leuther, S.Wagner, B.Weismann-Thaden, H.P.Stulz, M.Zink, M.Riessle, R.Sommer, J.Wilcke, M.Schlechtweg, B.Yang, O.Ambacher
W-band time-domain multiplexing FMCW MIMO radar for far-field 3-D imaging
2017 IEEE T Microw Theory, pages: 1 - 11 - M.Knapp, R.Hoffmann, V.Cimalla, O.Ambacher
Wettability investigations and wet transfer enhancement of large-area CVD-graphene on aluminum nitride
2017 J Nanomater, volume: 7, issue: 8, page: 226
2016
back to the year overview- D.Bleh, M.Roesch, M.Kuri, A.Dyck, A.Tessmann, A.Leuther, S.Wagner, O.Ambacher
A 100 GHz FMCW MIMO radar system for 3D image reconstruction
2016 European Radar Conference (EuRAD), pages: 37 - 40 - B.Amado-Rey, Y.Campos-Roca, C.Friesicke, A.Tessmann, R.Lozar, S.Wagner, A.Leuther, M.Schlechtweg, O.Ambacher
A 280 GHz stacked-FET power amplifier cell using 50 nm metamorphic HEMT technology
2016 11th European Microwave Integrated Circuits Conference (EuMIC), pages: 189 - 192 - C.Friesicke, P.Feuerschuetz, R.Quay, O.Ambacher, A.F.Jacob
A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-band
2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, pages: 1 - 4 - F.Maier, D.Krausse, D.Gruner, R.Reiner, P.Waltereit, R.Quay, O.Ambacher
A GaN-Based 10.1 MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - F.Thome, O.Ambacher
A W-band wireless communication transmitter utilizing a stacked-FET oscillator for high output power performance
2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, pages: 1 - 4 - B.Amado-Rey, Y.Campos-Roca, C.Friesicke, A.Tessmann, H.Massler, S.Wagner, A.Leuther, M.Schlechtweg, O.Ambacher
A broadband 175–245 GHz balanced medium power amplifier using 50-nm mHEMT technology
2016 Microwave Conference (APMC), Asia-Pacific, pages: 1 - 4 - A.Tessmann, A.Leuther, H.Massler, S.Wagner, F.Thome, M.Schlechtweg, O.Ambacher
A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality
2016 IEEE MTT-S International Microwave Symposium (IMS), issue: 3, pages: 1 - 3 - K.Hahmann, B.Klenner, M.Ulrich, O.Ambacher
A portable W-band radar system for enhancement of infrared vision in fire fighting operations
2016 SPIE digital library - M. Schlechtweg, A. Tessmann, A. Leuther, H. Massler, G. Moschetti, O. Ambacher
Advanced building blocks for (Sub-) millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, pages: 1 - 4 - F.Thome, M.Ohlrogge, A.Leuther, M.Schlechtweg, O.Ambacher
An investigation of millimeter wave switches based on shunt transistors including SPDT SWITCH MMICs up to 300 GHz
2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, pages: 1 - 4 - B.Weiss, R.Reiner, P.Waltereit, R.Quay, O.Ambacher
Analysis and modeling of GaN-based multi field plate Schottky power diodes
2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), pages: 1 - 6 - M.Reusch, K.Holc, W.Pletschen, L.Kirste, A. Zukauskaité, T.Yoshikawa, D.Iankow, O.Ambacher, V.Lebedev
Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices
2016 J Vac Sci Technol B, volume: 34, issue: 5, supplement: 052001, pages: 1 - 10 - D.Schwantuschke, B.Godejohann, S.Breuer, P.Bruckner, M.Mikulla, R.Quay, O.Ambacher
Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - M.Roesch, A.Tessmann, A.Leuther, M.Kuri, S.Wagner, O.Ambacher, H.Hulan
Compact W-band receiver module on hybrid liquid crystal polymer board
2016 46th European Microwave Conference (EuMC), pages: 1517 - 1520 - M.Ohlrogge, A.Tessmann, A.Leuther, M.Schlechtweg, O.Ambacher
Complex interaction of passive multiport structures and their description by separate discrete models
2016 Electron Lett, volume: 52, issue: 1, pages: 52 - 54 - F.van Raay, R.Quay, D.Schwantuschke, M.Ohlrogge, D.Peschel, M.Schlechtweg, O.Ambacher
Dual-gate HEMT parameter extraction based on 2.5 D multiport simulation of passive structures
2016 11th European Microwave Integrated Circuits Conference (EuMIC), pages: 241 - 244 - T.Yoshikawa, M.Reusch, V.Zuerbig, V.Cimalla, K.-H.Lee, M.Kurzyp, J.-C.Arnault, C.Nebel, O.Ambacher, V.Lebedev
Electrostatic self-assembly of diamond nanoparticles onto Al- and N-Polar sputtered aluminum nitride surfaces
2016 Nanomaterials-basel, volume: 6, pages: 11 - 20 - T.Yoshikawa, M.Reusch, K.Holc, D.Iankov, V.Zuerbig, A.Zukauskaite, Nebel Christoph E, Ambacher Oliver, Lebedev Vadim
Enhanced actuation of nanocrystalline diamond microelectromechanical disk resonators with AlN layers
2016 Appl Phys Lett, volume: 108, issue: 17, page: 171903 - E.Ture, P.Brueckner, R.Quay, O.Ambacher, M.Alsharef, R.Granzner, F.Schwierz
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
2016 11th European Microwave Integrated Circuits Conference (EuMIC), pages: 61 - 64 - D.Schwantuschke, R.Henneberger, S.Wagner, A.Tessmann, I.Kallfass, P.Brueckner, R.Quay, O.Ambacher
Gan-based e-band power amplifier modules
2016 46th European Microwave Conference (EuMC) - A.Zibold, R.Reiner, B.Weiss, M.Kunzer, R.Quay, J.Wagner, P.Waltereit, O.Ambacher
High voltage GaN-based Schottky diodes in non-isolated LED buck converters
2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), pages: 1 - 9 - E.Ture, B.Brueckner, B.Godejohann, R.Aidam, M.Alsharef, R.Granzner, F.Schwierz, R.Quay, O.Ambacher
High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
2016 IEEE Xplore Digital Library, volume: 4, issue: 1, pages: 1 - 6 - E.Ture, P.Brueckner, B.-J.Godejohann, R.Aidam, M.Alsharef, R.Granzner, F.Schwierz, R.Quay, O.Ambacher
High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
2016 Journal of the Electron Devices Society, volume: 4, issue: 1, pages: 1 - 6 - M.Himmerlich, A.Eisenhardt, T.Berthold, Ch.Y.Wang, V.Chimalla, O.Ambacher, S.Krischok
Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and water
2016 Phys Status Solidi A, volume: 213, issue: 3, pages: 831 - 838 - V.Carrubba, S.Maroldt, E.Ture, U.Udeh, M.Musser, W.Bronner, R.Quay, O.Ambacher
Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
2016 11th European Microwave Integrated Circuits Conference (EuMIC), pages: 233 - 236 - R.Reiner, P.Waltereit, B.Weiss, M.Wespel, D.Meder, M.Mikulla, R.Quay, O.Ambacher
Linear temperature sensors in high-voltage GaN-HEMT power devices
2016 Applied Power Electronics Conference and Exposition (APEC), pages: 2083 - 2086 - M.Roesch, A.Tessmann, A.Leuther, R.Weber, G.Moschetti, B.Aja, M.Kotiranta, H.Massler, V.Kangas, M.Perichaud, M.Schlechtweg, O.Ambacher
Low noise amplifiers for MetOp-SG
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, pages: 1 - 4 - M.Klenner, C.Zech, A.Huelsmann, J.Kuehn, M.Schlechtweg, O.Ambacher
Material characterization using a compact W-band ellipsometer
2016 46th European Microwave Conference (EuMC), pages: 803 - 806 - C.Zech, B.Baumann, A.Huelsmann, J.Kuehn, M.Schlechtweg, O.Ambacher
Measurement setup for the analysis of broadband frequency-modulated signals
2016 46th European Microwave Conference (EuMC), pages: 389 - 392 - R.Reiner, P.Waltereit, B.Weiss, M.Wespel, M.Mikulla, R.Quay, O.Ambacher
Monolithic gan-on-si half-bridge circuit with integrated freewheeling diodes
2016 PCIM Europe; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, pages: 1 - 7 - C.Friesicke, T.Maier, P.Brueckner, R.Quay, O.Ambacher
Packaged AlGaN/GaN HEMT power bars with 900 W output power and high PAE at L-band
2016 46th European Microwave Conference (EuMC), pages: 409 - 412 - M.Alsharef, R.Granzner, F.Schwierz, E.Ture, R.Quay, O.Ambacher
Performance of tri-gate AlGaN/GaN HEMTs
2016 46th European Solid-State Device Research Conference (ESSDERC), pages: 176 - 179 - B.Christian, J.Volk, I.Lukács, C.Sturm, A.Graillot, R.Dauksevicius, E. O’Reilly, O.Ambacher, V.Lebedev
Piezo-force and vibration analysis of ZnO nanowire arrays for sensor application
2016 Procedia Engineering, volume: 168, pages: 1192 - 1195 - M.Reusch, K.Holc, L.Kirste, P.Katus, L.Reindl, O.Ambacher, V.Lebedev
Piezoelectric AlN Films for FPW Sensors with Improved Device Performance
2016 Procedia Engineering, volume: 168, pages: 1040 - 1043 - T.Yoshikawa, F.Gao, V.Zuerbig, C.Giese, C.Nebel, O.Ambacher
Pinhole-free ultra-thin nanocrystalline diamond film growth via electrostatic self-assembly seeding with increased salt concentration of nanodiamond colloids
2016 Diamond and Related Materials, volume: 63, pages: 103 - 107 - S.Jauss, S.Schwaiger, W.Daves, O.Ambacher
Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications
2016 28th International Power Semiconductor Devices and ICs (ISPSD), pages: 83 - 86 - S.A.Jauss, S.Kilian, S.Schwaiger, S.Noll, W.Daves, O.Ambacher
Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
2016 Solid State Electronics, volume: 125, pages: 125 - 132 - F.Thome, S.Maroldt, O.Ambacher
Prospects and limitations of stacked-FET approaches for enhanced output power in voltage-controlled oscillators
2016 Ieee T Microw Theory, volume: 64, issue: 3, pages: 836 - 846 - A.Mueller, M.C.Wapler, U.T.Schwarz, M.Reisacher, K.Holc, O.Ambacher, U.Wallrabe
Quasi-Bessel beams from asymmetric and astigmatic illumination sources
2016 Opt Express, volume: 24, issue: 15, pages: 17433 - 17452 - M.Alsharef, M.Christiansen, R.Granzner, E.Ture, R.Quay, O.Ambacher, F.Schwierz
RF performance of trigate GaN HEMTs
2016 Ieee T Electron Dev, volume: 63, issue: 11, pages: 4255 - 4261 - S.Moench, I.Kallfass, R.Reiner, B.Weiss, P.Waltereit, R.Quay, O.Ambacher
Single-input GaN gate driver based on depletion-mode logic integrated with a 600 v gan-on-si power transistor
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pages: 204 - 209 - A.Endruschat, T.Heckel, R.Reiner, P.Waltereit, R.Quay, O.Ambacher, M.März, B.Eckardt, L.Frey
Slew rate control of a 600 V 55 mΩ GaN cascade
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), pages: 334 - 339 - M.Ohlrogge, A.Tessmann, A.Leuther, R.Weber, H.Massler, O.Ambacher
Small signal modelling approach for submillimeter wave III–V HEMTs with analysation and optimization possibilities
2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, pages: 1 - 4 - B.Weiss, R.Reiner, P.Waltereit, R.Quay, O.Ambacher, A.Sepahvand, D. Maksimovic
Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pages: 215 - 219 - M.Klenner, C.Zech, A.Huelsmann, J.Kuehn, M.Schlechtweg, O.Ambacher
Spectroscopic measurement of material properties using an improved millimeter-wave ellipsometer based on metallic substrates
2016 Ieee T Instrum Meas, volume: 65, issue: 11, pages: 2251 - 2559 - G.Moschetti, F.Thome, M.Ohlrogge, J.Goliasch, F.Schaefer, G.Aja, A.Leuther, M.Schlechtweg, M.G.Wiesching, M.Kotiranta Seelmann-Eggebert, O.Ambacher
Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature
2016 Ieee T Thz Sci Techn, volume: 64, pages: 10 - 22 - J.Stehle, O.Ambacher, A.Samarao, G.Yama, U.Krishnamoorthy
Study of a silicon parallel plate capacitor as a dew point sensor
2016 Ieee Sens J, pages: 1 - 3 - J.Rombach, A.Papadogianni, M.Mischo, V.Cimalla, L.Kirste, O.Ambacher, T.Bechthold, S.Krischok, M.Himmerlich, S.Selve, S.O.Bierwagen
The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In(2)O(3) thin films
2016 Sensor Actuat B-chem, volume: 236, pages: 909 - 916 - M.Wespel, V.M.Polyakov, M.Dammann, R.Reiner, P.Waltereit, R.Quay, M.Mikulla, O.Ambacher
Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
2016 IEEE T Electron Dev, volume: 63,2, pages: 598 - 605
2015
back to the year overview- Moschetti Giuseppe, Leuther Arnulf, Maßler Herman, Aja Beatriz, Rösch Markus, Schlechtweg Michael, Ambacher Oliver, Kangas Ville, Geneviève-Perichaud Marie
A 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figure
2015 IEEE, volume: 25, issue: 9, pages: 618 - 620 - B.Amado-Rey, Y.Campos-Roca, S.Maroldt, A.Tessmann, H.Massle, A.Leuther, M.Schlechtweg, O.Ambacher
A 200 GHz driver amplifier in metamorphic HEMT technology
2015 2015 Asia-Pacific Microwave Conference (APMC), volume: 2, pages: 1 - 3 - C Zech, A Hülsmann, M Schlechtweg, S Reinold, C Giers, B Kleiner, L. Georgi, R. Kahle, K. F. Becker, O. Ambacher
A compact W-band LFMCW radar module with high accuracy and integrated signal processing
2015 European Microwave Conference (EuMC), pages: 554 - 557 - V. Carrubba, E. Ture, S. Maroldt, M. Mußer, F. Van Raay, R. Quay, O. Ambacher
A dual-band UMTS/LTE highly power-efficient class-ABJ Doherty GaN PA
2015 10th European Microwave Integrated Circuits Conference (EuMIC), pages: 313 - 316 - F.A. Maier, A. Grede, D. Gruner, R. Quay, P. Waltereit, O. Ambacher
A novel broadband high-power Source-Pull/Load-Pull concept for the HF-to UHF-range
2015 European Microwave Conference (EuMC), pages: 1279 - 1282 - K Köhler, W Pletschen, B Godejohann, S Müller, HP Menner, O Ambacher
Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance
2015 J Appl Phys, volume: 118, issue: 12 - M. Reusch, P. Katus, K. Holc, W. Pletschen, L. Kirste, V. Zuerbig, D. Iankov, L. Reindl, O. Ambacher, V. Lebedev
Aluminium nitride membranes with embedded buried idt electrodes for novel flexural plate wave devices
2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), pages: 1291 - 1294 - T. Yoshikawa, V. Zürbig, F. Gao, R. Hoffmann, C. Nebel, O. Ambacher, V. Lebedev
Appropriate salt concentration of nanodiamond colloids for electrostatic self-assembly seeding of monosized individual diamond nanoparticles on silicon dioxide surfaces
2015 Langmuir, volume: 31, issue: 19, pages: 5319 - 5325 - R. Granzner, V. M. Polyakov, V. Cimalla, O. Ambacher, F. Schwierz
Bias-free lateral terahertz emitters - a simulation study
2015 J Appl Phys, volume: 118, issue: 4 - F. Van Raay, R. Quay, B. Aja, G. Moschetti, M. Seelmann-Eggebert, M. Schlechtweg, O. Ambacher
Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit
2015 10th European Microwave Integrated Circuits Conference (EuMIC), pages: 156 - 159 - M. Klenner, C. Zech, A. Hülsmann, M. Schlechtweg, O. Ambacher
Characterization of quasi-optical focusing systems at W-band frequencies
2015 European Microwave Conference (EuMC), pages: 311 - 314 - H. Hahn, B. Reuters, S. Geipel, M. Schauerte, F. Benkhelifa, O. Ambacher, H. Kalisch, A. Vescan
Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
2015 J Appl Phys, volume: 117, issue: 10 - S.A. Jauss, S. Schwaiger, W. Daves, S. Noll, O. Ambacher
Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress
2015 45th European Solid State Device Research Conference (ESSDERC), pages: 56 - 59 - N. Espinosa, S. U. Schwarz, V. Cimalla, O. Ambacher
Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors
2015 Sensor Actuat B-chem, volume: 210, pages: 633 - 639 - N. Espinosa, S. U. Schwarz, A. Podolska, O. Ambacher
Dynamic detection of target-DNA with AlGaN/GaN high electron mobility transistors
2015 Procedia Engineering, volume: 120, pages: 908 - 911 - M. Zhao, X. Y. Guo, O. Ambacher, C. Nebel, R. Hoffmann
Electrochemical generation of hydrogenated graphene flakes
2015 Carbon, volume: 83, pages: 128 - 135 - Carrubba V, Maroldt S, Musser M, Ture E, Dammann M, van Raay F, Quay R, Brückner P, Ambacher O
High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
2015 IEEE, volume: 25, issue: 8, pages: 526 - 528 - E. Ture, D. Schwantuschke, A. Tessmann, S. Wagner, P. Bruckner, M. Mikulla, R. Quay, O. Ambacher
High-gain AlGaN/GaN HEMT single chip E-band power amplifier MMIC with 30 dBm output power
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - J. Chéron, M. Campovecchio, R. Quéré, D. Schwantuschke, R. Quay, O. Ambacher
High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
2015 10th European Microwave Integrated Circuits Conference (EuMIC), pages: 262 - 264 - M. Wespel, M. Dammann, V. Polyakov, R. Reiner, P. Waltereit, B. Weiss, R. Quay, M. Mikulla, O. Ambacher
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
2015 IEEE International Reliability Physics Symposium - B Amado-Rey, Y Campos-Roca, R Weber, S Maroldt, A Tessmann, H Massler, S Wagner, A Leuther, O Ambacher
Impact of metallization layer structure on the performance of G-Band branch-line couplers
2015 IEEE Microw Wirel Co, volume: 25, issue: 12, pages: 793 - 795 - N. Espinosa, S. U. Schwarz, A. Podolska, O. Ambacher
Impedance characterization of DNA-functionalization layers on AlGaN/GaN high electron mobility transistors
2015 Procedia Engineering, volume: 120, pages: 912 - 915 - R. Reiner, P. Waltereit, B. Weiss, M. Wespel, R. Quay, M. Schlechtweg, M. Mikulla, O. Ambacher
Integrated reverse-diodes for GaN-HEMT structures
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pages: 45 - 48 - M. Klenner, T. Abels, C. Zech, A. Hülsmann, M. Schlechtweg, O. Ambacher
Investigation of dielectric properties of multilayer structures consisting of homogeneous plastics and liquid solutions at 75–110 GHz
2015 Journal of Sensors and Sensor Systems, volume: 4, issue: 1, pages: 125 - 131 - J. Wallauer, C. Grumber, V. Polyakov, R. Iannucci, V. Cimalla, O. Ambacher, M. Walther
Large area InN terahertz emitters based on the lateral photo-Dember effect
2015 Appl Phys Lett, volume: 107, issue: 11 - S. Moench, M. Costa, A. Barner, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher
Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pages: 92 - 97 - P. Dennler, S. Maroldt, R. Quay, O. Ambacher
Monolithic three-stage 6–18GHz high power amplifier with distributed interstage in GaN technology
2015 10th European Microwave Integrated Circuits Conference (EuMIC), pages: 29 - 32 - B. Weiss, R. Reiner, P. Waltereit, S. Muller, M. Wespel, R. Quay, O. Ambacher
Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - Benkhelifa F, Müller S, Polyakov VM, Ambacher O
Normally-off AlGaN/GaN/AlGaN double heterostructure FETs with a thick undoped GaN gate layer
2015 IEEE, volume: 36, issue: 9, pages: 905 - 907 - F. Thome, S Maroldt, O. Ambacher
Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers
2015 IEEE MTT-S International Microwave Symposium, pages: 1 - 4 - M. Seelmann-Eggebert, M. Ohlrogge, R. Weber, D. Peschel, H. Massler, M. Riessle, A. Tessmann, A. Leuther, M. Schlechtweg, O. Ambacher
On the accurate measurement and calibration of S-parameters for millimeter wavelengths and beyond
2015 IEEE T Microw Theory, volume: 63, issue: 7, pages: 2335 - 2341 - M. Seelmann-Eggebert, B. Aja, B. Baldischweiler, G. Moschetti, H. Massler, D. Bruch, M. Schlechtweg, O. Ambacher
On the determination of noise parameters of low‐noise transistor devices
2015 Int J Numer Model El, volume: 14 - E. Ture, P. Brückner, F.V. Raay, R. Quay, O. Ambacher, M. Alsharef, R. Granzner, F. Schwierz
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
2015 10th European Microwave Integrated Circuits Conference (EuMIC), pages: 97 - 100 - S. Mönch, M. Costa, A. Barner, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher
Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pages: 372 - 376 - A Hülsmann, C Zech, M Klenner, A Tessmann, A Leuther, D Lopez-Diaz, M. Schlechtweg, O. Ambacher
Radar system components to detect small and fast objects
2015 Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense - N. Espinosa, S. Schwarz, V. Cimalla, O. Ambacher
Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors
2015 MRS Online Proceedings Library Archive, volume: 1763 - B. Weiss, R. Reiner, R. Quay, P. Waltereit, F. Benkhelifa, M. Mikulla, M. Schlechtweg, O. Ambacher
Switching frequency modulation for GaN-based power converters
2015 IEEE Energy Conversion Congress and Exposition (ECCE), pages: 4361 - 4366 - Hahn Herwig, Benkhelifa Fouad, Ambacher Oliver, Brunner Frank, Noculak Achim, Kalisch Holger, Vescan Andrei
Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V
2015 IEEE, volume: 62, issue: 2, pages: 538 - 545 - V. Zuerbig, D. Pätz, J. Fries, M. Bichra, W. Pletschen, K. Holc, M. Reusch, C.E. Nebel, S. Sinzinger, O. Ambacher, V. Lebedev
Tunable multisegment SixNy/AlN piezo lenses for wavefront correction
2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), pages: 2045 - 2048 - F. Benkhelifa, S. Müller, V.M. Polyakov, S. Breuer, H. Czap, C. Manz, M. Mikulla, O. Ambacher
Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
2015 ECS Transactions, volume: 69, issue: 11, pages: 65 - 70 - M. Baeumler, M. Dammann, M. Wespel, R. George, H. Konstanzer, S. Maroldt, V. M. Polyakov, S. Müller, W. Bronner, P. Brückner, F. Benkhelifa, P. Waltereit, R. Quay, M. Mikulla, J. Wagner, O. Ambacher, A. Graff, F. Altmann, M. Simon-Najasek, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Roedle
With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
2015 Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications
2014
back to the year overview- A. Leuther, A. Tessmann, P. Doria, M. Ohlrogge, M. Seelmann-Eggebert, H. Maßler, M. Schlechtweg, O. Ambacher
20 nm Metamorphic HEMT technology for terahertz monolithic integrated circuits
2014 9th European Microwave Integrated Circuit Conference, pages: 84 - 87 - Tessmann Axel, Hurm Volker, Leuther Arnulf, Massler Hermann, Weber Rainer, Kuri Michael, Riessle Markus, Stulz Hans-Peter, Zink Martin, Schlechtweg Michael
243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology
2014 Cambridge University Press, volume: 6, issue: 3-4, pages: 215 - 223 - A. Tessmann, A. Leuther, H. Massler, V. Hurm, M. Kuri, M. Zink, M. Riessle, H.P. Stulz, M. Schlechtweg, O. Ambacher
A 600 GHz low-noise amplifier module
2014 IEEE MTT-S International Microwave Symposium (IMS2014), pages: 1 - 3 - R. Weber, D. Schwantuschke, P. Brückner, R. Quay, F. van Raay, O. Ambacher
A 92 GHz GaN HEMT voltage-controlled oscillator MMIC
2014 IEEE MTT-S International Microwave Symposium (IMS2014), pages: 1 - 4 - A Tessmann, A Leuther, V Hurm, H Massler, S Wagner, M Kuri, M Zink, M Riessle, H-P Stulz, M Schlechtweg, O Ambacher
A broadband 220-320 ghz medium power amplifier module
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - F Thome, S Maroldt, M Schlechtweg, O Ambacher
A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s
2014 Asia-Pacific Microwave Conference, pages: 1073 - 1075 - S. Maroldt, P. Brückner, R. Quay, O. Ambacher
A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
2014 IEEE MTT-S International Microwave Symposium (IMS2014), pages: 1 - 4 - M. Ohlrogge, M. Seelmann-Eggebert, A. Leuther, H. Maβler, A. Tessmann, R. Weber, D. Schwantuschke, M. Schlechtweg, O. Ambacher
A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications
2014 IEEE MTT-S International Microwave Symposium (IMS2014), pages: 1 - 4 - T. Maier, V. Carrubba, R. Quay, F. van Raay, O Ambacher
Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies
2014 83rd ARFTG Microwave Measurement Conference, pages: 1 - 4 - V. Carrubba, E. Ture, R. Quay, F. van Raay, M. Musser, O. Ambacher
Analysis and performance of drain bias “in-dependent” Class-J power amplifier
2014 Asia-Pacific Microwave Conference, pages: 998 - 1000 - M. Klenner, C. Zech, A. Huelsmann, M. Schlechtweg, J. Wagner, O. Ambacher
Analysis of dielectric properties of layered plastics at w-band frequencies Sensors and Measuring Systems
2014 17. ITG/GMA Symposium, pages: 1 - 4 - F. v. Raay, R. Quay, M. Seelmann-Eggebert, D. Schwantuschke, D. Peschel, M.l Schlechtweg, O. Ambacher
Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition
2014 9th European Microwave Integrated Circuit Conference, pages: 202 - 205 - T. Merkle, A. Leuther, S. Koch, I. Kallfass, A. Tessmann, S. Wagner, H. Massler, M. Schlechtweg, O. Ambacher
Backside process free broadband amplifier MMICs at D-Band and H-Band in 20 nm mHEMT technology
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - E. Ture, V. Carrubba, S. Maroldt, M. Musser, H. Walcher, R. Quay, O. Ambacher
Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering
2014 9th European Microwave Integrated Circuit Conference, pages: 345 - 348 - W. Pletschen, L. Kirste, V. Cimalla, S. Müller, M. Himmerlich, S. Krischok, O. Ambacher
Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment
2014 MRS Online Proceedings Library Archive, page: 1736 - B. Weiss, R. Reiner, R. Quay, P. Waltereit, S. Müller, F. Benkhelifa, M. Mikulla, M. Schlechtweg, O. Ambacher
Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
2014 16th European Conference on Power Electronics and Applications, pages: 1 - 10 - O. Ambacher, R. Ostendorf, D. Bleh, A. Merten, J. Grahmann, R. Schmidt, M. Kunzer, S. Hugger, J. Wagner
Combining external cavity quantum cascade lasers and MOEMS technology: an approach for miniaturization and fast wavelength scanning
2014 International Conference on Optical MEMS and Nanophotonics, pages: 91 - 92 - M. Klenner, C. Zech, A. Hülsmann, M. Schlechtweg, O. Ambacher
Compact quasi-optical focusing system for a 94 GHz FMCW radar
2014 15th International Radar Symposium (IRS), pages: 1 - 3 - M. Kotiranta, D. Bruch, A. Leuther, H. Massler, M. Seelmann-Eggebert, M. Schlechtweg, O. Ambacher, S. Türk, J. Goliasch, F. Schäfer2
Cryogenic low noise amplifier development for 67–116 GHz
2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), pages: 1 - 2 - V. Zuerbig, J. Hees, W. Pletschen, R.E. Sah, M. Wolfer, L. Kirste, N. Heidrich, C.E. Nebel, O. Ambacher, V. Lebedev
Elastic properties of ultrathin diamond/AlN membranes
2014 Thin Solid Films, volume: 558, pages: 267 - 271 - M. Baeumler, V. Polyakov, F. Gütle, M. Dammann, F. Benkhelifa, P. Waltereit, R. Reiner, S. Müller, M. Wespel, R. Quay, M. Mikulla, J. Wagner, O. Ambacher
Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
2014 Acta Phys Pol A, volume: 125, issue: 4, pages: 982 - 985 - S Shokhovets, F. Bärwolf, G. Gobsch, E. Runge, K. Köhler, O. Ambacher
Excitons and exciton‐phonon coupling in the optical response of GaN
2014 physica status solidi (c), volume: 11, issue: 2, pages: 297 - 301 - B. Méndez, K. Lorenz, B. Fraboni, O. Ambacher
Functional Nanowires: Synthesis, Characterization and Applications
2014 physica status solidi (c), volume: 11, issue: 2, pages: 313 - 314 - R. Aidam, E. Diwo, B.-J. Godejohann, L. Kirste, R. Quay, O. Ambacher
Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications
2014 Phys Status Solidi A, volume: 211, issue: 12, pages: 2854 - 2860 - I. Kallfass, G. Eren, R. Weber, S. Wagner, D. Schwantuschke, R. Quay, O. Ambacher
High linearity active GaN-HEMT down-converter MMIC for E-band radar applications
2014 9th European Microwave Integrated Circuit Conference, pages: 128 - 131 - D. Schwantuschke, B. Aja, M. Seelmann-Eggebert, R. Quay, A. Leuther, P. Brückner, M. Schlechtweg, M. Mikulla, I. Kallfass, O. Ambacher
Improved AlGaN pin photodetectors for monitoring of ultraviolet radiation
2014 IEEE MTT-S International Microwave Symposium (IMS2014), pages: 1 - 4 - K. Holc, A. Jakob, T. Weig, K. Köhler, O. Ambacher, U.T. Schwarz
Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes
2014 Novel In-Plane Semiconductor Lasers XIII, volume: 9002 - Wespel Matthias, Baeumler M, Polyakov Vladimir, Dammann M, Reiner Richard, Waltereit Patrick, Quay Rüdiger, Mikulla Michael, Ambacher Oliver
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
2014 Elsevier, volume: 54, issue: 12, pages: 2656 - 2661 - F. Thome, A. Leuther, S. Maroldt, M. Schlechtweg, O. Ambacher
Low-Power Wireless Data Transmitter MMIC with Data Rates up to 25 Gbit/s and 9.5 mW power consumption using a 113 GHz carrier
2014 IEEE MTT-S International Microwave Symposium (IMS2014), pages: 1 - 4 - V. Lebedev, D. Iankov, N. Heidrich, V. Zuerbig, C. Wild, V. Cimalla, O. Ambacher
Nano-diamond based spheres for radio frequency electromechanical resonators
2014 IOP Publishing, volume: 24, issue: 4 - R. Reiner, P. Waltereit, F. Benkhelifa, H. Walcher, R. Quay, M. Schlechtweg, O. Ambacher
Novel layout and packaging for lateral, low-resistance GaN-on-Si power transistors
2014 8th International Conference on Integrated Power Electronics Systems (CIPS 2014), pages: 1 - 5 - F. Thome, A. Leuther, S. Maroldt, M. Schlechtweg, O. Ambacher
Planar zero bias Schottky diodes on an InGaAs metamorphic HEMT MMIC process
2014 IEEE Microw Wirel Co, volume: 24, issue: 12, pages: 860 - 862 - D. Iankov, V. Zürbig, W. Pletschen, C. Giese, R. Iannucci, O. Ambacher, V. Lebedev
Processing of nanoscale gaps for boron-doped nanocrystalline diamond based MEMS
2014 Procedia Engineering, volume: 87, pages: 903 - 906 - D. Schwantuschke, B. Aja, M. Seelmann-Eggebert, R. Quay, A. Leuther, P. Brückner, M. Schlechtweg, M. Mikulla, I. Kallfass, O. Ambacher
Q-and E-band amplifier MMICs for satellite communication
2014 IEEE MTT-S International Microwave Symposium (IMS2014), pages: 1 - 4 - Carrubba Vincenzo, Maroldt Stephan, Mußer Markus, Walcher Herbert, Van Raay Friedbert, Quay Rüdiger, Ambacher Oliver, Wiegner Dirk, Seyfried Ulrich, Bohn Thomas
Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach
2014 Cambridge University Press, volume: 6, issue: 2, pages: 115 - 128 - M. Dammann, M. Baeumler, R. Anto, H. Konstanzer, P. Bruckner, V. Polyakov, M. Wespel, S. Müller, D. Schwantuschke, S. Maroldt, R. Quay, M. Mikulla, O. Ambacher
Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), pages: 115 - 118 - J. Stehle, V.A. Hong, A. Feyh, G.J. O’Brien, G. Yama, O. Ambacher, B. Kim, T.W. Kenny
Silicon migration of through-holes in single-and poly-crystalline silicon membranes
2014 Proc. Solid-State Sensors, Actuat., Microsystems Workshop, Hilton Head, pages: 32 - 35 - V. Carrubba, R. Quay, S. Maroldt, M. Musser, F. v. Raay, O. Ambacher
Source/Load Pull Investigation of AlGaN/GaN Power Transistors with Ultra-High Efficiency
2014 German Microwave Conference (GeMiC 2014), pages: 1 - 4 - P. Dennler, R. Quay, P. Brückner, M. Schlechtweg, O. Ambacher
Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), pages: 37 - 39 - W Freude, S Koenig, D Lopez-Diaz, J Antes, F Boes, R Henneberger, A. Leuther, A. Tessmann, R. Schmogrow, D. Hillerkuss, R. Palmer, T. Zwick, C. Koos, O. Ambacher, J. Leuthold, I Kallfass
Wireless communications on THz carriers takes shape
2014 16th International Conference on Transparent Optical Networks (ICTON), pages: 1 - 4 - S. Koenig, D. Lopez-Diaz, J. Antes, F. Boes, R. Henneberger, A. Leuther, A. Tessmann, R. Schmogrow, D. Hillerkuss, R. Palmer, T. Zwick, C. Koos, W. Freude, O. Ambacher, J. Leuthold, I. Kallfass
Wireless sub-THz communication system with high data rate enabled by RF photonics and active MMIC technology
2014 IEEE Photonics Conference, pages: 414 - 415
2013
back to the year overview- S. Maroldt, R. Quay, P. Dennler, D. Schwantuschke, M. Musser, M. Dammann, R. Aidam, P. Waltereit, A. Tessmann, O. Ambacher
(In) AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
2013 Jpn J Appl Phys, volume: 52, issue: 8S, page: 08JN13 - S. Koenig, F. Boes, D. Lopez-Diaz, J. Antes, R. Henneberger, R. Schmogrow, D. Hillerkuss, R. Palmer, T. Zwick, C. Koos, W. Freude, O. Ambacher, I. Kallfass, J. Leuthold
100 Gbit/s wireless link with mm-wave photonics
2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), pages: 1 - 3 - A. Leuther, A. Tessmann, M. Dammann, H. Massler, M. Schlechtweg, O. Ambacher
35 nm mHEMT technology for THz and ultra low noise applications
2013 International Conference on Indium Phosphide and Related Materials (IPRM), pages: 1 - 2 - D. Lopez-Diaz, A. Tessmann, A. Leuther, S. Wagner, M. Schlechtweg, O. Ambacher, S. Koenig, J. Antes, F. Boes, F. Kurz, R. Henneberger, I. Kallfass
A 240 GHz quadrature receiver and transmitter for data transmission up to 40 Gbit/s
2013 European Microwave Integrated Circuit Conference, pages: 440 - 443 - V. Hurm, R. Weber, A. Tessmann, H. Massler, A. Leuther, M. Kuri, M. Riessle, H. P. Stulz, M. Zink, M. Schlechtweg, O. Ambacher, T. Närhi
A 243 GHz LNA module based on mHEMT MMICs with integrated waveguide transitions
2013 IEEE microwave and wireless components letters, volume: 23, issue: 9, pages: 486 - 488 - A. Tessmann, V. Hurm, A. Leuther, H. Massler, R. Weber, M. Kuri, M. Riessle, H.P. Stulz, M. Zink, M. Schlechtweg, O. Ambacher, T. Närhi
A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers
2013 European Microwave Integrated Circuit Conference, pages: 220 - 223 - Weber Rainer, Schwantuschke Dirk, Brückner Peter, Quay Rüdiger, Mikulla Micheal, Ambacher Oliver, Kallfass Ingmar
A 67 GHz GaN voltage-controlled oscillator MMIC with high output power
2013 IEEE, volume: 23, issue: 7, pages: 374 - 376 - C. Zech, A. Hülsmann, R. Weber, A. Tessmann, S. Wagner, M. Schlechtweg, A. Leuther, O. Ambacher
A compact 94 GHz FMCW radar MMIC based on 100 nm InGaAs mHEMT technology with integrated transmission signal conditioning
2013 European Microwave Integrated Circuit Conference, pages: 436 - 439 - C. Zech, A. Hülsmann, M. Schlechtweg, L. Georgi, H. Gulan, O. Ambacher
A compact, universal and cost-efficient antenna setup for mmW-radar applications
2013 International Conference on Radar, pages: 417 - 421 - D. Schwantuschke, M, Seelmann-Eggebert, P. Brückner, R. Quay, M. Mikulla, O. Ambacher, I. Kallfass
A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs
2013 European Microwave Integrated Circuit Conference, pages: 284 - 287 - A. Tessmann, A. Leuther, H. Massler, U. Lewark, S. Wagner, R. Weber, M. Kuri, M. Zink, M. Riessle, H.-P. Stulz, M. Schlechtweg, O. Ambacher, R. Sommer, A. Wahlen, S. Stanko
A monolithic integrated mHEMT chipset for high-resolution submillimeter-wave radar applications
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - B. Albrecht, S. Kopta, O. John, L. Kirste, R. Driad, K. Köhler, M. Walther, O. Ambacher
AlGaN ultraviolet A and ultraviolet C photodetectors with very high specific detectivity D
2013 Jpn J Appl Phys, volume: 52, issue: 8S, page: 08JB28 - R. Reiner, P. Waltereit, F. Benkhelifa, S. Muller, M. Wespel, R. Quay, M. Schlechtweg, M. Mikulla, O. Ambacher
Benchmarking of large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - M. Szymkiewicz, A. Hülsmann, A. Tessmann, M. Schlechtweg, A. Leuther, O. Ambacher, S. Koch, M. Riedel, I. Kallfass
Broadband absorption and emission millimeter-wave spectroscopy between 220 and 325 GHz
2013 Next-Generation Spectroscopic Technologies VI, volume: 8726 - S. Linkohr, W. Pletschen, S. U. Schwarz, J. Anzt, V. Cimalla, O. Ambacher
CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors
2013 J Biotechnol, volume: 163, issue: 4, pages: 354 - 361 - R. E. Sah, C. Tegenkamp, M. Baeumler, F. Bernhardt, R. Driad, M. Mikulla, O. Ambacher
Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition
2013 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, volume: 31, issue: 4, page: 04D111 - B. Baldischweiler, D. Bruch, I. Kallfass, M. Seelmann-Eggebert, A. Leuther, D. Peschel, M. Schlechtweg, O. Ambacher
Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature
2013 European Microwave Integrated Circuit Conference, pages: 141 - 144 - V. Carrubba, S. Maroldt, R. Quay, O. Ambacher
Class-BJ power amplifier modes: The IMD behavior of reactive terminations
2013 European Microwave Integrated Circuit Conference, pages: 420 - 423 - F. Thome, H. Massler, S. Wagner, A. Leuther, I. Kallfass, M. Schlechtweg, O. Ambacher
Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), pages: 1 - 4 - N. Heidrich, F. Knöbber, V. Polyakov, V. Cimalla, W. Pletschen, R. E. Sah, L. Kirste, S. Leopold, S. Hampl, O. Ambacher, V. Lebedev
Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations
2013 Sensors and Actuators A: Physical, volume: 195, pages: 32 - 37 - R.E. Sah, L. Kirste, H. Kirmse, M. Mildner, L. Wilde, S. Kopta, F. Knöbber, M. Krieg, V. Cimalla, V. Lebedev, O. Ambacher
Crystallographic Texture of Submicron Thin Aluminum Nitride Films on Molybdenum Electrode for Suspended Micro and Nanosystems
2013 ECS Journal of Solid State Science and Technology, volume: 2, issue: 4, pages: 180 - 184 - J. Binder, K. P. Korona, A. Wysmolek, M. Kaminska, K. Köhler, L. Kirste, O. Ambacher, M. Zajak, R. Dwilinski
Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN
2013 J Appl Phys, volume: 114, issue: 22, page: 223504 - Heidrich N, Iankov D, Hees J, Pletschen W, Sah RE, Kirste L, Zuerbig V, Nebel C, Ambacher O, Lebedev V
Enhanced mechanical performance of AlN/nanodiamond micro-resonators
2013 IOP Publishing, volume: 23, issue: 12, page: 125017 - P. Waltereit, W. Bronner, R. Quay, M. Dammann, M. Cäsar, S. Müller, R. Reiner, P. Brueckner, R. Kiefer, F. van Raay, J. Kühn, M. Musser, C. Haupt, M. Mikulla, O. Ambacher
GaN HEMTs and MMICs for space applications
2013 Semicond Sci Tech, volume: 28, issue: 7, page: 074010 - H. Hahn, F. Benkhelifa, O. Ambacher, A. Alam, M. Heuken, H. Yacoub, A. Noculak, H. Kalisch, A. Vescan
GaN-on-Si enhancement mode metal insulator semiconductor heterostructure field effect transistor with on-current of 1.35 A/mm
2013 Jpn J Appl Phys, volume: 52, issue: 9R, page: 090204 - P. Waltereit, R. Reiner, H. Czap, D. Peschel, S. Müller, R. Quay, M. Mikulla, O. Ambacher
GaN‐based high voltage transistors for efficient power switching
2013 physica status solidi c, volume: 10, issue: 5, pages: 831 - 834 - J. Chéron, M. Campovecchio, R. Quéré, D. Schwantuschke, R. Quay, Oliver Ambacher
High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
2013 European Microwave Integrated Circuit Conference, pages: 292 - 295 - D. Schwantuschke, P. Brueckner, R. Quay, M. Mikulla, O. Ambacher
High-gain millimeter-wave AlGaN/GaN transistors
2013 IEEE T Electron Dev, volume: 60, issue: 10, pages: 3112 - 3118 - M. Mikulla, A. Leuther, P. Brückner, D. Schwantuschke, A. Tessmann, M. Schlechtweg, O. Ambacher, M. Caris
High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
2013 European Microwave Integrated Circuit Conference, pages: 169 - 171 - M. Mußer, F. van Raay, P. Brückner, W. Bronner, R. Quay, M. Mikulla, O. Ambacher
Individual source vias for GaN HEMT power bars
2013 European Microwave Integrated Circuit Conference, pages: 184 - 187 - F. van Raay, R. Quay, M. Seelmann-Eggebert, D. Schwantuschke, T. Maier, M. Schlechtweg, O. Ambacher
Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation
2013 European Microwave Integrated Circuit Conference, pages: 288 - 291 - S. Leopold, T. Polster, D. Paetz, F. Knoebber, O. Ambacher, S. Sinzinger, M. Hoffmann
MOEMS tunable microlens made of aluminum nitride membranes
2013 Journal of Micro/Nanolithography, MEMS, and MOEMS, volume: 12, issue: 2, page: 023012 - R. E. Sah, R. Driad, F. Bernhardt, L. Kirste, C.-C. Leancu, H. Czap, F. Benkhelifa, M. Mikulla, O. Ambacher
Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
2013 Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, volume: 31, issue: 4, page: 041502 - M. Schlechtweg, A. Tessmann, A. Leuther, H. Massler, S. Wagner, R. Aidam, J. Rosenzweig, O. Ambacher, I. Kallfass, U. J. Lewark, R. Sommer, A. Wahlen, S. Stanko, J. Ender
Millimeter-and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), pages: 1 - 4 - M. Klenner, C. Zech, A. Hülsmann, A. Tessmann, A. Leuther, M. Schlechtweg, J. Wagner, O. Ambacher
Multilayer material analysis using an active millimeter wave imaging system
2013 14th International Radar Symposium (IRS), pages: 207 - 213 - N. Heidrich, J. Hees, V. Zuerbig, D. Iankov, W. Pletschen, R.E. Sah, B. Raynor, L. Kirste, C.E. Nebel, O. Ambacher, V. Lebedev
Nano-diamond vacuum MEMS for RF applications
2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), pages: 218 - 221 - F. van Raay, R. Quay, M. Seelmann-Eggebert, D. Schwantuschke, D. Peschel, M. Schlechtweg, O. Ambacher
New Low-Frequency Dispersion Model for AlGaN/GaN HEMTs Using Integral Transform and State Description
2013 IEEE T Microw Theory, volume: 61, issue: 1, pages: 154 - 167 - P. Dennler, R. Quay, O. Ambacher
Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), pages: 1 - 4 - V. Zuerbig, D. Paetz, W. Pletschen, J. Hees, R.E. Sah, L. Kirste, N. Heidrich, V. Cimalla, C. Nebel, O. Ambacher, V. Lebedev
Piezo-actuated tunable diamond/AlN micro lenses
2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), pages: 2317 - 2320 - J. Hees, N. Heidrich, W. Pletschen, R.E. Sah, M. Wolfer, O. Aneurin Williams, V. Lebedev, C.E. Nebel, O. Ambacher
Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films
2013 Nanotechnology, volume: 24, issue: 2, page: 025601 - N. Heidrich, V. Zuerbig, D. Iankov, W. Pletschen, R.E. Sah, B. Raynor, L. Kirste, C.E. Nebel, O. Ambacher, V. Lebedev
Piezoelectrically actuated diamond cantilevers for high-frequency applications
2013 Diamond and related materials, volume: 38, pages: 69 - 72 - P. Waltereit, W. Bronner, P. Brueckner, M. Dammann, R. Reiner, S. Mueller, J. Kuehn, M. Mußer, R. Quay, M. Mikulla, O. Ambacher
Recent development in GaN HEMTs and MMICs for high power electronics
2013 Japan Society of Applied Physics, pages: 958 - 959 - M. Mischo, M. Bitterling, M. Himmerlich, S. Krischok, O. Ambacher, V. Cimalla
Seebeck ozone sensors
2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), pages: 1645 - 1648 - F. Purkl, T. S. English, G. Yama, J. Provine, A. K. Samarao, A. Feyh, B. Kim, G. O'Brien, O. Ambacher, R. T. Howe, T. W. Kenny
Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, pages: 1507 - 1510 - U.J. Lewark, A. Tessmann, A. Leuther, T. Zwick, O. Ambacher, I. Kallfass
Signal generation and amplification up to 600 GHz using metamorphic HEMT technology
2013 European Microwave Integrated Circuit Conference, pages: 125 - 128 - F. Purkl, T. English, G. Yama, J. Provine, A. K. Samarao, A. Feyh, G. O'Brien, O. Ambacher, R. T. Howe, T. W. Kenny
Sub-10 nanometer uncooled platinum bolometers via plasma enhanced atomic layer deposition
2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), pages: 185 - 188 - R. Quay, P. Waltereit, J. Kühn, P. Brückner, M. van Heijningen, P. Jukkala, K. Hirche, O. Ambacher
Submicron-AlGaN/GaN MMICs for space applications
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), pages: 1 - 4 - A. Tessmann, M. Schlechtweg, D. Bruch, U. J Lewark, A. Leuther, H. Massler, S. Wagner, M. Seelmann-Eggebert, V. Hurm, R. Aidam, I. Kallfass, O. Ambacher
Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication
2013 Asia-Pacific Microwave Conference Proceedings (APMC), pages: 203 - 205 - S. U. Schwarz, V. Cimalla, G. Eichapfel, M. Himmerlich, S. Krischok, O. Ambacher
Thermal functionalization of GaN surfaces with 1-alkenes
2013 Langmuir, volume: 29, issue: 21, pages: 6296 - 6301 - J. Antes, S. Koenig, D. Lopez-Diaz, F. Boes, A. Tessmann, R. Henneberger, O. Ambacher, T. Zwick, I. Kallfass
Transmission of an 8-PSK modulated 30 Gbit/s signal using an MMIC-based 240 GHz wireless link
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), pages: 1 - 3 - N. Heidrich, V. Zürbig, D. Iankov, W. Pletschen, R. E. Sah, B. Raynor, L. Kirste, C. E. Nebel, O. Ambacher, V. Lebedev
Transparent diamond electrodes for tunable micro-optical devices
2013 Diamond and related materials, volume: 38, pages: 101 - 103 - S. Leopold, D. Paetz, F. Knoebber, O. Ambacher, S. Sinzinger, M. Hoffmann
Tunable cylindrical microlenses based on aluminum nitride membranes
2013 MOEMS and Miniaturized Systems XII, volume: 8616, page: 861611 - M. De Luca, G. Pettinari, A. Polimeni, M. Capizzi, G. Ciatto, L. Amidani, E. Fonda, F. Boscherini, F. Filippone, A. Amore Bonapasta, A. Knübel, V. Cimalla, O. Ambacher, D. Giubertoni, M. Bersani
Tuning of the optical properties of In-rich Inx InxGa1−xN (x=0.82−0.49) alloys by light-ion irradiation at low energy
2013 AIP Conference Proceedings, volume: 1566, issue: 1, pages: 93 - 94 - E. Weissbrodt, M. Schlechtweg, O. Ambacher, I. Kallfass
W-band active loads and switching front-end MMICs for radiometer calibration
2013 International Journal of Microwave and Wireless Technologie, volume: 5, issue: 3, pages: 293 - 299 - S. Koenig, D. Lopez-Diaz, J. Antes, F. Boes, R. Henneberger, A. Leuther, A. Tessmann, R. Schmogrow, D. Hillerkuss, R. Palmer, T. Zwick, C. Koos, W. Freude, O. Ambacher, J. Leuthold, I. Kallfass
Wireless sub-THz communication system with high data rate
2013 Nat Photonics, volume: 7, issue: 12, page: 977
2012
back to the year overview- J. Antes, S. Koenig, A. Leuther, H. Massler, J. Leuthold, O. Ambacher, I. Kallfass
220 GHz wireless data transmission experiments up to 30 Gbit/s
2012 IEEE/MTT-S International Microwave Symposium Digest, pages: 1 - 3 - A. Leuther, A. Tessmann, H. Massler, R. Aidam, M. Schlechtweg, O. Ambacher
450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology
2012 International Conference on Indium Phosphide and Related Materials, pages: 229 - 232 - P. Dennler, D. Schwantuschke, R. Quay, O. Ambacher
8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
2012 IEEE/MTT-S International Microwave Symposium Digest, pages: 1 - 3 - S. Ayhan, S. Diebold, S. Scherr, A. Tessmann, O. Ambacher, I. Kallfass, T. Zwick
A 96 GHz radar system for respiration and heart rate measurements
2012 IEEE/MTT-S International Microwave Symposium Digest, pages: 1 - 3 - D. Schwantuschke, P. Brückner, R. Quay, M. Mikulla, O. Ambacher, I. Kallfass
A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
2012 7th European Microwave Integrated Circuit Conference, pages: 703 - 706 - S. Diebold, S. Ayhan, S. Scherr, H. Massler, A. Tessmann, A. Leuther, O. Ambacher, T. Zwick, I. Kallfass
A W-band MMIC radar system for remote detection of vital signs
2012 J Infrared Millim Te, volume: 33, issue: 12, pages: 1250 - 1267 - D. Bruch, R.I. Amils, J.D. Gallego, M. Seelmann-Eggebert, B. Aja, F. Schafer, C. Diez, A. Leuther, M. Schlechtweg, O. Ambacher, I. Kallfass
A noise source module for in-situ noise figure measurements from DC to 50 GHz at cryogenic temperatures
2012 IEEE microwave and wireless components letters, volume: 22, issue: 12, pages: 657 - 659 - D. Lopez-Diaz, I. Kallfass, A. Tessmann, A. Leuther, S. Wagner, M. Schlechtweg, O. Ambacher
A subharmonic chipset for gigabit communication around 240 GHz
2012 IEEE/MTT-S International Microwave Symposium Digest, pages: 1 - 3 - F. Thome, S. Diebold, M. Schlechtweg, A. Leuther, O. Ambacher, I. Kallfass
A tunable 140GHz analog phase shifter with high linearity performance
2012 The 7th German Microwave Conference, pages: 1 - 4 - E. Weissbrodt, A. Tessmann, M. Schlechtweg, I. Kallfass, O. Ambacher
Active load modules for W-band radiometer calibration
2012 IEEE International Geoscience and Remote Sensing Symposium, pages: 2945 - 2948 - D. Krausse, F. Benkhelifa, R. Reiner, R. Quay, O. Ambacher
AlGaN/GaN power amplifiers for ISM applications
2012 Solid State Electron, volume: 74, pages: 108 - 113 - S. Maroldt, P. Brueckner, R. Quay, O. Ambacher, S. Maier, D. Wiegner, A. Pascht
An integrated 12 Gbps switch-mode driver MMIC with 5 VPP for digital transmitters in 100 nm GaN technology
2012 7th European Microwave Integrated Circuit Conference, pages: 115 - 118 - C. Zech, S. Diebold, S. Wagner, M. Schlechtweg, A. Leuther, O. Ambacher, I. Kallfass
An ultra-broadband low-noise traveling-wave amplifier based on 50nm InGaAs mHEMT technology
2012 The 7th German Microwave Conference, pages: 1 - 4 - D. Bruch, M. Seelmann-Eggebert, I. Kallfass, A. Leuther, S. Diebold, M. Schlechtweg, O. Ambacher
Broadband MMIC tuners dedicated to noise parameter measurements at cryogenic temperatures
2012 Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, pages: 1 - 3 - V. Carrubba, R. Quay, M. Schlechtweg, O. Ambacher, M. Akmal, J. Lees, J. Benedikt, P. J Tasker, S. C. Cripps
Continuous-ClassF3 power amplifier mode varying simultaneously first 3 harmonic impedances
2012 IEEE/MTT-S International Microwave Symposium Digest, pages: 1 - 3 - P. Brückner, R. Kiefer, C. Haupt, A. Leuther, S. Müller, R. Quay, D. Schwantuschke, M. Mikulla, O. Ambacher
Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm‐wave applications
2012 physica status solidi c, volume: 9, issue: 3-4, pages: 903 - 906 - V. Carrubba, S. Maroldt, M. Mußer, H. Walcher, M. Schlechtweg, R. Quay, O. Ambacher
Dual-band Class-ABJ AlGaN/GaN high power amplifier
2012 7th European Microwave Integrated Circuit Conference, pages: 635 - 638 - V. Lebedev, N. Heidrich, F. Knöbber, R. E. Sah, W. Pletschen, B. Raynor, V. M. Polyakov, V. Cimalla, O. Ambacher
Electrostatically coupled vibration modes in unimorph complementary microcantilevers
2012 Appl Phys Lett, volume: 100, issue: 12, page: 124104 - V. Lebedev, F. Knöbber, N. Heidrich, R. E. Sah, W. Pletschen, V. Cimalla, O. Ambacher
Evaluation of AlN material properties through vibration analysis of thin membranes
2012 physica status solidi c, volume: 9, issue: 2, pages: 403 - 406 - H. Hahn, B. Reuters, A. Wille, N. Ketteniss, F. Benkhelifa, O. Ambacher, H. Kalisch, A. Vescan
First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET
2012 Semicond Sci Tech, volume: 27, issue: 5, page: 055004 - R. Reiner, P. Waltereit, F. Benkhelifa, S. Müller, H. Walcher, S. Wagner, R. Quay, M. Schlechtweg, O. Ambacher
Fractal structures for low-resistance large area AlGaN/GaN power transistors
2012 24th International Symposium on Power Semiconductor Devices and ICs, pages: 341 - 344 - V. Hurm, A. Tessmann, H. Massler, A. Leuther, M. Riessle, M. Zink, M. Schlechtweg,, O. Ambacher
GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500–750 GHz)
2012 Asia Pacific Microwave Conference Proceedings, pages: 145 - 147 - D. Schwantuschke, I. Kallfass, R. Quay, O. Ambacher
GaN-based millimeter-wave monolithic integrated circuits
2012 19th International Conference on Microwaves, Radar & Wireless Communications, volume: 1, pages: 97 - 98 - P. Waltereit, W. Bronner, R. Quay, M. Dammann, M. Cäsar, S. Müller, F. van Raay, R. Kiefer, P. Brückner, J. Kühn, M. Musser, L. Kirste, C. Haupt, W. Pletschen, T. Lim, R. Aidam, M. Mikulla, O. Ambacher
GaN‐based high‐frequency devices and circuits: A Fraunhofer perspective
2012 Phys Status Solidi A, volume: 209, issue: 3, pages: 491 - 496 - M. Caesar, M. Dammann, V. Polyakov, P. Waltereit, W. Bronner, M. Baeumler, R. Quay, M. Mikulla, O. Ambacher
Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
2012 IEEE International Reliability Physics Symposium (IRPS) - R. Driad, R. Schmidt, L. Kirste, R. Loesch, M. Mikulla, O. Ambacher
Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation
2012 physica status solidi c, volume: 9, issue: 2, pages: 381 - 384 - P. Waltereit, J. Kühn, R. Quay, F. Van Raay, M. Dammann, M. Cäsar, S. Müller, M. Mikulla, O. Ambacher, J. Lätti, M. Rostewitz, K. Hirche, J. Däubler
High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10^5hours
2012 7th European Microwave Integrated Circuit Conference, pages: 123 - 126 - E. Weissbrodt, A. Leuther, M. Schlechtweg, I. Kallfass, O. Ambacher
Highly integrated switching calibration front-end MMIC with active loads for w-band radiometers
2012 7th European Microwave Integrated Circuit Conference, pages: 203 - 206 - P. Waltereit, W. Bronner, M. Musser, F. van Raay, M. Dammann, M. Cäsar, S. Müller, L. Kirste, K. Köhler, R. Quay, M. Mikulla, O. Ambacher
Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
2012 J Appl Phys, volume: 112, issue: 5, page: 053718 - S. Linkohr, W. Pletschen, V. Polyakov, M. Himmerlich, P. Lorenz, S. Krischok, L. Kirste, S. Müller, O. Ambacher, V. Cimalla
Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures
2012 physica status solidi c, volume: 9, issue: 3-4, pages: 1096 - 1098 - D. Bruch, R.I. Amils, J.D. Gallego, M. Seelmann-Eggebert, B. Aja, F Schäfer, C. Diez, A. Leuther, M. Schlechtweg, O. Ambacher, I. Kallfass
Measurement Techniques, System Modeling Techniques, and Applications-A Noise Source Module for In-Situ Noise Figure Measurements From DC to 50 GHz at Cryogenic Temperatures
2012 IEEE Microwave and Wireless Components Letters, volume: 22, issue: 12, page: 657 - F. Gütle, M. Baeumler, M. Dammann, M. Cäsar, H. Walcher, P. Waltereit, W. Bronner, S. Müller, R. Kiefer, R. Quay, M. Mikulla, O. Ambacher, A. Graff, F. Altmann, M. Simon
Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs
2012 Materials Science Forum, volume: 725, pages: 79 - 82 - M. Schlechtweg, A. Tessmann, A. Hülsmann, I. Kallfass, A. Leuther, R. Aidam, C. Zech, U. J. Lewark, H. Massler, M. Riessle, M. Zink, J. Rosenzweig, O. Ambacher
Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications
2012 Future Security Research Conference, pages: 200 - 211 - Ch. Y. Wang, S. Bagchi, M. Bitterling, R.W. Becker, K. Köhler, V. Cimalla, O. Ambacher, C. Chaumette
Photon stimulated ozone sensor based on indium oxide nanoparticles II: Ozone monitoring in humidity and water environments
2012 Sensors and Actuators B: Chemical, volume: 164, issue: 1, pages: 37 - 42 - S. Linkohr, W. Pletschen, L. Kirste, M. Himmerlich, P. Lorenz, S. Krischok, V. Polyakov, S. Müller, O. Ambacher, V. Cimalla
Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs
2012 physica status solidi c, volume: 9, issue: 3-4, pages: 938 - 941 - F. Gütle, V. M. Polyakov, M. Baeumler, F. Benkhelifa, S. Müller, M. Dammann, M. Cäsar, R. Quay, M. Mikulla, J. Wagner, O. Ambacher
Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
2012 Semicond Sci Tech, volume: 27, issue: 12, page: 125003 - M. Dammann, H. Czap, J. Rüster, M. Baeumler, F. Gütle, P. Waltereit, F. Benkhelifa, R. Reiner, M. Cäsar, H. Konstanzer, S. Müller, R. Quay, M. Mikulla, O. Ambacher
Reverse bias stress test of GaN HEMTs for high-voltage switching applications
2012 IEEE International Integrated Reliability Workshop Final Report, pages: 105 - 108 - F. Knöbber, V. Zürbig, N. Heidrich, J. Hees, R. E. Sah, M. Baeumler, S. Leopold, D. Pätz, O. Ambacher, V. Lebedev
Static and dynamic characterization of AlN and nanocrystalline diamond membranes
2012 Phys Status Solidi A, volume: 209, issue: 10, pages: 1835 - 1842 - J. Antes, T. Mahler, T. Zwick, A. Tessmann, O. Ambacher, I. Kallfass
Study on data transmission of complex modulated signals using an MMIC-based 220 GHz wireless link
2012 International Symposium on Signals, Systems, and Electronics (ISSSE), pages: 1 - 4 - M. Himmerlich, S. Krischok, C. Wang, V. Cimalla, O. Ambacher
Surface chemical and electronic properties of In2O3 and In2O3-x nanoparticles for ozone detection
2012 Verhandlungen der Deutschen Physikalischen Gesellschaft - M. Himmerlich, Ch. Y. Wang, V. Cimalla, O. Ambacher, S. Krischok
Surface properties of stoichiometric and defect-rich indium oxide films grown by MOCVD
2012 J Appl Phys, volume: 111, issue: 9, page: 093704 - J. M. Mánuel, F. M. Morales, R. García, R. Aidam, L. Kirste, O. Ambacher
Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
2012 J Cryst Growth, volume: 357, pages: 35 - 41 - P. Waltereit, W. Bronner, R. Kiefer, R. Quay, M. Dammmann, M. Cäsar, P. Brückner, S. Müller, M. Mikulla, O. Ambacher
Trade‐offs between performance and reliability in AlGaN/GaN transistors
2012 physica status solidi c, volume: 9, issue: 2, pages: 365 - 368 - S. Diebold, D. Goetzl, S. Ayhan, S. Scherr, P. Pahl, H. Massler, A. Tessmann, A. Leuther, O. Ambacher, T. Zwick, I. Kallfass
W-band MMIC radar modules for remote detection of vital signs
2012 7th European Microwave Integrated Circuit Conference, pages: 195 - 198 - J. Antes, D. Lopez-Diaz, A. Tessmann, A. Leuther, H. Massler, T. Zwick, O. Ambacher, I. Kallfass
Wireless multi-gigabit data transmission using active MMIC components at 220 GHz
2012 International Journal of Microwave and Wireless Technologies, volume: 4, issue: 3, pages: 291 - 298
2011
back to the year overview- B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, J. Wagner
2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz
2011 Opt Lett, volume: 36, issue: 18, pages: 3587 - 3589 - A. Leuther, S. Koch, A. Tessmann, I. Kallfass, T. Merkle, H. Massler, R. Loesch, M. Schlechtweg, S. Saito, O. Ambacher
20 nm metamorphic HEMT with 660 GHz fT
2011 IPRM -23rd International Conference on Indium Phosphide and Related Materials, pages: 1 - 4 - Q. Yang, O. Ambacher
9.4 Quantum cascade lasers
2011 Laser Systems, pages: 74 - 86 - I. Kallfass, H. Massler, S. Wagner, D. Schwantuschke, P. Brückner, C. Haupt, R. Kiefer, R. Quay, O. Ambacher
A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
2011 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, pages: 144 - 147 - D. Bruch, F. Schäfer, M. Seelmann-Eggebert, B. Aja, I. Kallfass, A. Leuther, M. Schlechtweg, O. Ambacher
A single chip broadband noise source for noise measurements at cryogenic temperatures
2011 IEEE MTT-S International Microwave Symposium, pages: 1 - 4 - I. Kallfass, R. Quay, H. Massler, S. Wagner, D. Schwantuschke, C. Haupt, R. Kiefer, O. Ambacher
A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology
2011 IEEE MTT-S International Microwave Symposium, pages: 1 - 4 - C. Zech, A. Hülsmann, I. Kallfass, A. Tessmann, M. Zink, M. Schlechtweg, A. Leuther, O. Ambacher
Active millimeter-wave imaging system for material analysis and object detection
2011 Millimetre Wave and Terahertz Sensors and Technology IV, volume: 8188, page: 81880D - D. Krausse, F. Benkhelifa, R. Reiner, R. Quay, O. Ambacher
AlGaN/GaN power amplifiers for ISM frequency applications
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), pages: 283 - 286 - N. Heidrich, F. Knoebber, O. Ambacher, V. Lebedev, R. E. Sah, V. Cimalla
AlN-based microstructures for biocompatible piezo-generation
2011 Verhandlungen der Deutschen Physikalischen Gesellschaft - N. Heidrich, F. Knöbber, S. Hampl, W. Pletschen, R.E. Sah, V. Cimalla, V. Lebedev, O. Ambacher
AlN-basierte mikroelektromechanische Strukturen für Implantate
2011 Proc. MST-Kongress, volume: 10, page: 12 - M. Musser, R. Quay, F. Van Raay, M. Mikulla, O. Ambacher
Analysis of GaN HEMTs for broadband high-power amplifier design
2011 6th European Microwave Integrated Circuit Conference, pages: 128 - 131 - R. Driad, F. Benkhelifa, L. Kirste, M. Mikulla, O. Ambacher
Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs/InP Heterojunction Bipolar Transistors
2011 J Electrochem Soc, volume: 158, issue: 12, page: H1279 - S. Maroldt, R. Quay, C. Haupt, O. Ambacher
Broadband GaN-based switch-mode core MMICs with 20 W output power operating at UHF
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - M. Cäsar, M. Dammann, V. Polyakov, P. Waltereit, R. Quay, M. Mikulla, O. Ambacher
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
2011 Microelectron Reliab, volume: 51, issue: 2, pages: 224 - 228 - S. U. Schwarz, S. Linkohr, P. Lorenz, S. Krischok, T. Nakamura, V. Cimalla, C. E. Nebel, O. Ambacher
DNA‐sensor based on AlGaN/GaN high electron mobility transistor
2011 physica status solidi (a), volume: 208, issue: 7, pages: 1626 - 1629 - S. Diebold, I. Kallfass, H. Massler, M. Seelmann-Eggebert, A. Leuther, A. Tessmann, P. Pahl, S. Koch, O. Ambacher
Design and model studies for solid-state power amplification at 210 GHz
2011 International Journal of Microwave and Wireless Technologies, volume: 3, issue: 3, page: 339 - C. Haupt, S. Maroldt, R. Quay, W. Pletschen, A. Leuther, O. Ambacher
Development of a high transconductance GaN MMIC technology for millimeter wave applications
2011 physica status solidi c, volume: 8, issue: 2, pages: 297 - 299 - C. Moeller, S. Shokhovets, G. Gobsch, K. Koehler, O. Ambacher
Dielectric functions of wurtzite GaN at elevated temperatures
2011 Verhandlungen der Deutschen Physikalischen Gesellschaft - R. Quay, A. Tessmann, R. Kiefer, S. Maroldt, C. Haupt, U. Nowotny, R. Weber, H. Massler, D. Schwantuschke, M. Seelmann-Eggebert, A. Leuther, M. Mikulla, O. Ambacher
Dual-gate GaN MMICs for MM-wave operation
2011 IEEE microwave and wireless components letters, volume: 21, issue: 2, pages: 95 - 97 - F. Knöbber, O. Bludau, C.‐C. Röhlig, R.E. Sah, O.A. Williams, L. Kirste, S. Leopold, D. Pätz, V. Cimalla, O. Ambacher, V. Lebedev
Dynamic characterization of thin aluminum nitride microstructures
2011 physica status solidi c, volume: 8, issue: 2, pages: 479 - 481 - K. Köhler, S. Müller, P. Waltereit, W. Pletschen, V. Polyakov, T. Lim, L. Kirste, H. P. Menner, P. Brückner, O. Ambacher, C. Buchheim, R. Goldhahn
Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
2011 J Appl Phys, volume: 109, issue: 5, page: 053705 - V. Lebedev, V. Polyakov, A. Knübel, R. Aidam, L. Kirste, V. Cimalla, R. Granzner, F. Schwierz, O. Ambacher
Electron and hole accumulation in InN/InGaN heterostructures
2011 physica status solidi c, volume: 8, issue: 2, pages: 485 - 487 - T. Lim, P. Waltereit, R. Aidam, R. Quay, L. Kirste, P. Bruckner, R. Kiefer, O. Ambacher
Fabrication of AlGaInN/GaN Transistors with ft and fmax Exceeding 100 GHz
2011 Minerals, Metals and Materials Society/AIME - W. Bronner, P. Waltereit, S. Müller, M. Dammann, R. Kiefer, Ph. Dennler, F. van Raay, M. Mußer, R. Quay, M. Mikulla, O. Ambacher
From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
2011 International Conference on Compound Semiconductor Manufacturing Technology - S. Maroldt, R. Quay, C. Haupt, R. Kiefer, D. Wiegner, O. Ambacher
GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
2011 International Journal of Microwave and Wireless Technologies, volume: 3, issue: 3, page: 319 - J. M. Mánuel, F. M. Morales, J. G. Lozano, R. García, T. Lim, L. Kirste, R. Aidam, O. Ambacher
Growth and characterization of InAlN layers nearly lattice‐matched to GaN
2011 physica status solidi c, volume: 8, issue: 7-8, pages: 2500 - 2502 - Ch. Y. Wang, L. Kirste, F. M. Morales, J. M. Mánuel, C. C. Röhlig, K. Köhler, V. Cimalla, R. Garcia, O. Ambacher
Growth mechanism and electronic properties of epitaxial In2O3 films on sapphire
2011 J Appl Phys, volume: 110, issue: 9, page: 093712 - D. Lopez-Diaz, I. Kallfass, A. Tessmann, R. Weber, H. Massler, A. Leuther, M. Schlechtweg, O. Ambacher
High-performance 60áGHz MMICs for wireless digital communication in 100ánm mHEMT technology
2011 International Journal of Microwave and Wireless Technologies, volume: 3, issue: 2, page: 107 - J. M. Mánuel, F. M. Morales, R. García, T. Lim, L. Kirste, R. Aidam, O. Ambacher
Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs
2011 Cryst Growth Des, volume: 11, issue: 6, pages: 2588 - 2591 - P. Schuh, H. Sledzik, M. Oppermann, R. Quay, J. Kühn, T. Lim, P. Waltereit, M. Mikulla, O. Ambacher
InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
2011 6th European Microwave Integrated Circuit Conference, pages: 69 - 72 - R. Driad, R. Aidam, Q. K. Yang, M. Maier, H. Güllich, M. Schlechtweg, O. Ambacher
InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice
2011 Appl Phys Lett, volume: 98, issue: 4, page: 043503 - A. Tessmann, A. Leuther, V. Hurm, I. Kallfass, H. Massler, M. Kuri, M. Riessle, M. Zink, R. Lösch, M. Seelmann-Eggebert, M. Schlechtweg, O. Ambacher
Metamorphic HEMT MMICs and modules operating between 300 and 500 GHz
2011 IEEE J Solid-st Circ, volume: 46, issue: 10, pages: 2193 - 2202 - L, Zhou, L. Kirste, T. Lim, R. Aidam, O. Ambacher, D. Smith
Microstructural Characterization of Closely-Lattice-Matched AlIn (Ga) N Alloys for High Electron Mobility Transistors
2011 Microsc Microanal, volume: 17, issue: S2, pages: 1354 - 1355 - K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher, M.A. Hein
Micro‐and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications
2011 Phys Status Solidi A, volume: 208, issue: 2, pages: 357 - 376 - M. Schlechtweg, A. Tessmann, I. Kallfass, A. Leuther, V. Hurm, H. Massler, M. Riessle, R. Lösch, O. Ambacher
Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications
2011 IEEE 9th International New Circuits and systems conference, pages: 269 - 272 - J. Antes, D. Lopez-Diaz, A. Tessmann, A. Leuther, H. Massler, T. Zwick, O. Ambacher, I. Kallfass
Mmic based wireless data transmission of a 12.5 gbit/s signal using a 220 ghz carrier
2011 41st European Microwave Conference, pages: 238 - 241 - P. Dennler, F. van Raay, M. Seelmann-Eggebert, R. Quay, O. Ambacher
Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
2011 IEEE MTT-S International Microwave Symposium, pages: 1 - 4 - M. Rattunde, S. Kaspar, B. Rösener, T. Töpper, C. Manz, K. Köhler, O. Ambacher, J. Wagner
Narrow linewidth 2 µm GaSb-based semiconductor disk laser
2011 The European Conference on Lasers and Electro-Optics - Ch. Y. Wang, R. W. Becker, T. Passow, W. Pletschen, K. Köhler, V. Cimalla, O. Ambacher
Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air
2011 Sensors and Actuators B: Chemical, volume: 152, issue: 2, pages: 235 - 240 - M.-E. Kleemann, S. Shokhovets, G. Gobsch, O. Ambacher
Polaritonic effects in wide-gap semiconductors as a function of temperature
2011 Verhandlungen der Deutschen Physikalischen Gesellschaft - T. Lim, R. Aidam, P. Waltereit, W. Pletschen, R. Quay, L. Kirste, O. Ambacher
Quaternary barriers for improved performance of GaN‐based HEMTs
2011 physica status solidi c, volume: 8, issue: 7-8, pages: 2439 - 2441 - M. Dammann, M. Baeumler, F. Gütle, M. Cäsar, H. Walcher, P. Waltereit, W. Bronner, S. Müller, R. Kiefer, R. Quay, M. Mikulla, O. Ambacher, A. Graff, F. Altmann, M. Simon
Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
2011 IEEE International Integrated Reliability Workshop Final Report, pages: 42 - 46 - R. Reiner, F. Benkhelifa, D. Krausse, R. Quay, O. Ambacher
Simulation and analysis of low-resistance AlGaN/GaN HFET power switches
2011 14th European Conference on Power Electronics and Applications, pages: 1 - 10 - S. Kaspar, B. Rösener, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, J. Wagner
Sub-MHz-linewidth 200-mW actively stabilized 2.3-μm semiconductor disk laser
2011 Ieee Photonic Tech L, volume: 23, issue: 20, pages: 1538 - 1540 - R. Driad, F. Benkhelifa, L. Kirste, R. Lösch, M. Mikulla, O. Ambacher
Surface passivation of InGaAs/InP HBTs using atomic layer deposited Al2O3
2011 ECS Transactions, volume: 35, issue: 4, page: 205 - S. Leopold, D. Paetz, F. Knoebber, T. Polster, O. Ambacher, S. Sinzinger, M. Hoffmann
Tunable refractive beam steering using aluminum nitride thermal actuators
2011 MEMS Adaptive Optics V, volume: 7931, page: 79310B - R. E. Makon, R. Driad, J. Rosenzweig, V. Hurm, C. Schubert, H. Walcher, M. Schlechtweg, O. Ambacher
Ultra-high-speed transmitter and receiver ICs for 100 Gbit/s ethernet using InP DHBTs
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - I. Kallfass, A. Huelsmann, A. Tessmann, A. Leuther, E. Weissbrodt, M. Schlechtweg, O. Ambacher
W-band direct detection radiometers using metamorphic HEMT technology
2011 Passive Millimeter-Wave Imaging Technology XIV, volume: 8022, page: 80220O - E. Weissbrodt, I. Kallfass, A. Hülsmann, A. Tessmann, A. Leuther, H. Massler, O. Ambacher
W-band radiometer system with switching front-end for multi-load calibration
2011 IEEE International Geoscience and Remote Sensing Symposium, pages: 3843 - 3846
2010
back to the year overview- R.E. Makon, R. Driad, C. Schubert, J. Fischer, R. Lösch, H. Walcher, J. Rosenzweig, M. Schlechtweg, O. Ambacher
107–112 Gbit/s fully integrated CDR/1: 2 DEMUX using InP-based DHBTs
2010 The 5th European Microwave Integrated Circuits Conference, pages: 206 - 209 - D. Lopez-Diaz, I. Kallfass, A. Tessmann, H. Massler, A. Leuther, M. Schlechtweg, O. Ambacher
A balanced resistive 210 ghz mixer with 50 ghz if bandwidth
2010 The 5th European Microwave Integrated Circuits Conference, pages: 190 - 193 - S. Linkohr, S. Schwarz, S. Krischok, P. Lorenz, V. Cimalla, Ch. Nebel, O. Ambacher
A novel bio‐functionalization of AlGaN/GaN‐ISFETs for DNA‐sensors
2010 physica status solidi c, volume: 7, issue: 7-8, pages: 1810 - 1813 - V. Cimalla, C.-C. Röhlig, V. Lebedev, O. Ambacher, K. Tonisch, F. Niebelschütz, P. Brueckner, M. A. Hein
AlGaN/GaN based heterostructures for MEMS and NEMS applications
2010 Solid State Phenomena, volume: 159, pages: 27 - 38 - P. Waltereit, W. Bronner, R. Quay, M. Dammann, R. Kiefer, W. Pletschen, S. Müller, R. Aidam, H. Menner, L. Kirste, K. Köhler, M. Mikulla, O. Ambacher
AlGaN/GaN epitaxy and technology
2010 International journal of microwave and wireless technologies, volume: 2, issue: 1 - F. Knoebber, O. Bludau, C.-C. Roehlig, O. Williams, R. E. Sah, L. Kirste, V. Cimalla, V. Lebedev, C. Nebel, O. Ambacher
Aluminum nitride and nanodiamond thin film microstructures
2010 Verhandlungen der Deutschen Physikalischen Gesellschaft - T. Lim, R. Aidam, L. Kirste, P. Waltereit, R. Quay, S. Müller, O. Ambacher
Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
2010 Appl Phys Lett, volume: 96, issue: 25, page: 252108 - J. Kühn, M. Musser, F. van Raay, R. Kiefer, M. Seelmann-Eggebert, M. Mikulla, R. Quay, T. Rödle, O. Ambacher
Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
2010 International Journal of Microwave and Wireless Technologies, volume: 2, issue: 1, pages: 115 - 120 - T. Lim, R. Aidam, L. Kirste, P. Waltereit, S. Müller, O. Ambacher
Design of near lattice‐matched AlGaInN‐barriers for highly‐scalable GaN‐based transistor structures
2010 physica status solidi c, volume: 7, issue: 7-8, pages: 1958 - 1960 - S. Diebold, I. Kallfass, H. Massler, A. Leuther, A. Tessmann, P. Pahl, S. Koch, M. Siegel, O. Ambacher
Determination of suitable mHEMT transistor dimensioning for power amplification at 210 GHz by comprehensive measurements
2010 The 5th European Microwave Integrated Circuits Conference, pages: 78 - 81 - P. Waltereit, W. Bronner, R. Quay, M. Dammann, S. Müller, K. Köhler, M. Mikulla, O. Ambacher, L. Harm, M. Lorenzini, T. Rödle, K. Riepe, K. Bellmann, C. Buchheim, R. Goldhahn
Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
2010 physica status solidi c, volume: 7, issue: 10, pages: 2398 - 2403 - J. Kühn, F. van Raay, R. Quay, R. Kiefer, M. Mikulla, M. Seelmann-Eggebert, W. Bronner, M. Schlechtweg, O. Ambacher, M. Thumm
Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency
2010 J Infrared Millim Te - F. Knöbber, O. Bludau, O.A. Williams, R.E. Sah, L. Kirste, M. Baeumler, S. Leopold, D. Pätz, C.E. Nebel, O. Ambacher, V. Cimalla, V. Lebedev
Diamond/AlN Thin Films for Optical Applications
2010 AIP Conference Proceedings, volume: 1292, issue: 1, pages: 205 - 208 - S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher
Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz
2010 Ieice T Electron, volume: 93, issue: 8, pages: 1238 - 1244 - C.-C. Röhlig, F. Niebelschütz, P. Brueckner, K. Tonisch, O. Ambacher, V. Cimalla
Elastic properties of nanowires
2010 Phys Status Solidi B, volume: 247, issue: 10, pages: 2557 - 2570 - S. U. Schwarz, V. Cimalla, C. Nebel, O. Ambacher
Functionalization of AlGaN/GaN heterostructures with TFAAD
2010 Verhandlungen der Deutschen Physikalischen Gesellschaft - M. Musser, H. Walcher, T. Maier, R. Quay, M. Dammann, M. Mikulla, O. Ambacher
GaN power FETs for next generation mobile communication systems
2010 The 5th European Microwave Integrated Circuits Conference, pages: 9 - 12 - T Lim, R Aidam, P Waltereit, T, Henkel, R Quay, R Lozar, T, Maier, L Kirste, O Ambacher
GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
2010 Ieee Electr Device L, volume: 31, issue: 7, pages: 671 - 673 - J. Kühn, P. Waltereit, F. van Raay, R. Aidam, R. Quay, O. Ambacher, M. Thumm
Harmonic termination of AlGaN/GaN/(Al) GaN-single-and double-heterojunction HEMTs
2010 German Microwave Conference Digest of Papers, pages: 122 - 125 - P. Waltereit, W. Bronner, R. Kiefer, R. Quay, J. Kühn, F. Van Raay, M. Dammann, S. Müller, C. Libal, T. Meier, M. Mikulla, O. Ambacher
High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
2010 Proceedings of the CS Mantech Conference - V.M. Polyakov, V. Cimalla, V. Lebedev, K. Köhler, S. Müller, P. Waltereit, O. Ambacher
Impact of Al content on transport properties of two-dimensional electron gas in GaN/Al(x)Ga(1-x)N/GaN heterostructures
2010 Appl Phys Lett, volume: 97, issue: 14, page: 142112 - W. Pletschen, R. Kiefer, S. Maroldt, S. Müller, R. Quay, M. Mikulla, O. Ambacher
Influence of Dry Etch Conditions on the Performance of Recessed Gate GaN/AlGaN HEMTs
2010 ECS Transactions, volume: 33, issue: 13, page: 61 - K. Koehler, S. Mueller, R. Aidam, P. Waltereit, W. Pletschen, L. Kirste, H.P. Menner, W. Bronner, A. Leuther, R. Quay, M. Mikulla, O. Ambacher, R. Granzner, F. Schwierz, C. Buchheim, R. Goldhahn
Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
2010 J Appl Phys, volume: 107, issue: 5 - S. Maroldt, R. Quay, C. Haupt, R. Kiefer, D. Wiegner, O. Ambacher
Integrated-Schottky-diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
2010 The 40th European Microwave Conference, pages: 636 - 639 - 9M. Baeumler, F. Gütle, V. M. Polyakov, M. Cäsar, M. Dammann, H. Konstanzer, W. Pletschen, W. Bronner, R. Quay, P. Waltereit, M. Mikulla, O. Ambacher, F. Bourgeois, R. Behtash, K. Riepe, P. J. van der Wel, J. Klappe, T. Rödle
Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
2010 J Electron Mater, volume: 39, issue: 6, pages: 756 - 760 - A. Leuther, A. Tessmann, I. Kallfass, H. Massler, R. Loesch, M. Schlechtweg, M. Mikulla, O. Ambacher
Metamorphic HEMT technology for submillimeter-wave MMIC applications
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), pages: 1 - 6 - D. Lopez-Diaz, I. Kallfass, A. Tessmann, H. Massler, A. Leuther, M. Schlechtweg, O. Ambacher
Monolithic integrated 210 GHz couplers for balanced mixers and image rejection mixers
2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, pages: 58 - 6 - Ch. Y. Wang, V. Cimalla, M. Kunzer, T. Passow, W. Pletschen, O. Kappeler, J. Wagner, O. Ambacher
Near‐UV LEDs for integrated InO‐based ozone sensors
2010 physica status solidi c, volume: 7, issue: 7-8, pages: 2177 - 2179 - F. Niebelschuetz, K. Brueckner, K. Tonisch, R. Stephan, V. Cimalla, O. Ambacher, M.A. Hein
Piezoelectric actuated epitaxially grown AlGaN/GaN‐resonators
2010 physica status solidi c, volume: 7, issue: 7-8, pages: 1829 - 1831 - J.M. Mánuel, F.M. Morales, J.G. Lozano, D. González, R. García, T. Lim, L. Kirste, R. Aidam, O. Ambacher
Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
2010 Acta Mater, volume: 58, issue: 12, pages: 4120 - 4125 - L. Kirste, T. Lim, R. Aidam, S. Müller, P. Waltereit, O. Ambacher
Structural properties of MBE AlInN and AlGaInN barrier layers for GaN‐HEMT structures
2010 Phys Status Solidi A, volume: 207, issue: 6, pages: 1338 - 1341 - D. Lopez-Diaz, I. Kallfass, A. Tessmann, A. Leuther, H. Massler, M. Schlechtweg, O. Ambacher
Subharmonically pumped 210 GHz i/q mixers
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pages: 1 - 4 - D. Pätz, S. Leopold, F. Knöbber, S. Sinzinger, M. Hoffmann, O. Ambacher
Tunable compound eye cameras
2010 Micro-Optics, volume: 7716, page: 77160K
2009
back to the year overview- I. Kallfass, A. Tessmann, H. Massler, A. Leuther, M. Schlechtweg, O. Ambacher
A 200 GHz active heterodyne receiver MMIC with low sub-harmonic LO power requirements for imaging frontends
2009 European Microwave Integrated Circuits Conference (EuMIC), pages: 45 - 48 - I. Kallfass, A. Tessmann, H. Massler, D. Lopez-Diaz, A. Leuther, M. Schlechtweg, O. Ambacher
A 300 GHz active frequency-doubler and integrated resistive mixer MMIC
2009 European Microwave Integrated Circuits Conference (EuMIC), pages: 200 - 203 - A. Tessmann, A. Leuther, V. Hurm, H. Massler, M. Zink, M. Kuri, M. Riessle, R. Losch, M. Schlechtweg, O. Ambacher
A 300 GHz mHEMT amplifier module
2009 IEEE International Conference on Indium Phosphide & Related Materials, pages: 169 - 199 - S. Linkohr, S. U. Schwarz, S. Krischok, P. Lorenz, T. Nakamura, V. Polyakov, V. Cimalla, C. Nebell, O. Ambacher
A novel functionalization of AlGaN/GaN-pH-Sensors for DNA-sensors
2009 MRS Online Proceedings Library Archive, volume: 1202 - A. Hülsmann, A. Liebelt, A. Tessmann, A. Leuther, M. Schlechtweg, O. Ambacher
Active millimeter-wave imaging using a raster scanner
2009 Radar Sensor Technology XIII, volume: 7308 - S. Chartier, A. Tessmann, A. Leuther, R. Weber, I. Kallfass, M. Schlechtweg, S. Stanko, H. Essen, O. Ambacher
Advanced mHEMT MMICs for 220 GHz high‐resolution imaging systems
2009 physica status solidi c, volume: 6, issue: 6, pages: 1390 - 1393 - A. Hülsmann, A. Leuther, I. Kallfass, R. Weber, A. Tessmann, M. Schlechtweg, O. Ambacher
Advanced mHEMT technologies for space applications
2009 the Proceedings of the 20th International Symposium on Space Terahertz Technology, pages: 178 - 182 - P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, C. F. McConville
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3
2009 Phys Rev B, volume: 79, issue: 20, page: 205211 - G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, V. Lebedev, V. Cimalla, O. Ambacher
Carrier mass measurements in degenerate indium nitride
2009 Phys Rev B, volume: 79, issue: 16 - L. Kolaklieva, R. Kakanov, P. Stefanov, V. Cimalla, S. Maroldt, O. Ambacher, K. Tonisch, F. Niebelschütz
Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions
2009 Materials Science Forum, volume: 615, pages: 951 - 954 - J. Kuhn, F. Van Raay, R. Quay, R. Kiefer, D. Peschel, M. Mikulla, M. Seelmann-Eggebert, W. Bronner, M. Schlechtweg, O. Ambacher, M. Thumm
Design of X-band GaN MMICs using field plates
2009 European Microwave Integrated Circuits Conference (EuMIC), pages: 33 - 36 - J. Kuhn, F. Van Raay, R. Quay, R. Kiefer, T. Maier, R. Stibal, M. Mikulla, M. Seelmann-Eggebert, W. Bronner, M. Schlechtweg, O. Ambacher, M. Thumm
Design of highly-efficient GaN X-band-power-amplifier MMICs
2009 IEEE MTT-S International Microwave Symposium Digest, pages: 661 - 664 - F. M. Morales, D. González, J. G. Lozano, R. García, S. Hauguth-Frank, V. Lebedev, V. Cimalla, O. Ambacher
Determination of the composition of InxGa1− xN from strain measurements
2009 Acta Mater, volume: 57, issue: 19, pages: 5681 - 5692 - P. Waltereit, W. Bronner, R. Quay, M. Dammann, S. Müller, M. Musser, M. Mikulla, O. Ambacher, F. van Rijs, T. Rödle, K. Riepe
Development of AlGaN/GaN HEMTs with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
2009 physica status solidi c, volume: 6, issue: 6, pages: 1369 - 1372 - P. Waltereit, W. Bronner, R. Quay, M. Dammann, R. Kiefer, S. Müller, M. Musser, J. Kühn, F. van Raay, M. Seelmann-Eggebert, M. Mikulla, O. Ambacher, F. van Rijs, T. Rödle, K. Riepe
GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability
2009 physica status solidi (a), volume: 206, issue: 6, pages: 1215 - 1220 - S. Maroldt, Ch. Haupt, W. Pletschen, S. Müller, R. Quay, O. Ambacher, Ch. Schippel, F. Schwierz
Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
2009 Jpn J Appl Phys, volume: 48, issue: 4S - S. Maroldt, C. Haupt, R. Kiefer, W. Bronner, S. Mueller, W. Benz, R. Quay, O. Ambacher
High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, pages: 1 - 4 - P. Waltereit, S. Müller, K. Bellmann, C. Buchheim, R. Goldhahn, K. Köhler, L. Kirste, M. Baeumler, M. Dammann, W. Bronner, R. Quay, O. Ambacher
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
2009 J Appl Phys, volume: 106, issue: 2, page: 023535 - R. E. Makon, R. Driad, R. Lösch, J. Rosenzweig, M. Schlechtweg, O. Ambacher
InP DHBT-based 1: 2 DEMUX IC operating at up to 120 Gbit/s
2009 Electron Lett, volume: 45, issue: 25, pages: 1340 - 1342 - A. Konkin, H.-K. Roth, P. Scharff, A. Aganov, O. Ambacher, S. Sensfuss
K-band ESR studies of structural anisotropy in P3HT and P3HT/PCBM blend polymer solid films: Paramagnetic defects after continuous wave Xe-lamp photolysis
2009 Solid State Commun, volume: 149, issue: 21-22, pages: 893 - 897 - M. Schlechtweg, A. Tessmann, I. Kallfass, A. Leuther, R. Weber, S. Chartier, R. Driad, R. E. Makon, V. Hurm, M. Seelmann-Eggebert, H. Massler, M. Kuri, M. Riessle, M. Zink, F. Benkhelifa, R. Lösch, J. Rosenzweig, O. Ambacher
MMICs and mixed-signal ICs based on III/V technology for highest frequencies and data rates
2009 Frequenz, volume: 63, issue: 5-6, pages: 86 - 92 - A. Leuther, A. Tessmann, I. Kallfass, R. Losch, M. Seelmann-Eggebert, N. Wadefalk, F. Schafer, J. D. Gallego Puyol, M. Schlechtweg, M. Mikulla, O. Ambacher
Metamorphic HEMT technology for low-noise applications
2009 IEEE International Conference on Indium Phosphide & Related Materials, pages: 188 - 191 - I. Kallfass, A. Tessmann, A. Leuther, H. Massler, M. Schlechtweg, O. Ambacher
Millimeter-wave monolithic integrated circuits for imaging and remote sensing at 140, 200, and 300 GHz
2009 Millimetre Wave and Terahertz Sensors and Technology II, volume: 7485 - S. Shokhovets, K. Köhler, O. Ambacher, G. Gobsch
Observation of Fermi-edge excitons and exciton-phonon complexes in the optical response of heavily doped n-type wurtzite GaN
2009 Phys Rev B, volume: 79, issue: 4, page: 045201 - M. Dammann, M. Casar, P. Waltereit, W. Bronner, H. Konstanzer, R. Quay, S. Muller, M. Mikulla, O. Ambacher, P. Van der Wel, T. Rodle, R. Behtash, F. Bourgeois, K. Riepe
Reliability of AlGaN/GaN HEMTs under DC-and RF-operation
2009 Reliability of Compound Semiconductors Digest (ROCS), pages: 19 - 32 - K. Brueckner, F. Niebelschuetz, K. Tonisch, R. Stephan, V. Cimalla, O. Ambacher, M. A. Hein
Resonant piezoelectric ALGaN/GaN MEMS sensors in longitudinal mode operation
2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems, pages: 927 - 930 - M. Gebinoga, I. Cimalla, L. Silveira, M. Klett, V. Lebedev, F. Niebelschütz, O. Ambacher, A. Schober
Response of nerve cell to inhibitor recorded by aluminium-gallium-nitride FET
2009 Sensors for environment, health and security, pages: 311 - 318 - F. Niebelschütz, V. Cimalla, K. Brückner, R. Stephan, K. Tonisch, M. A. Hein, O. Ambacher
Sensing applications of micro-and nanoelectromechanical resonators
2009 Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems, volume: 221, issue: 2, pages: 59 - 65 - Ch. Schilling, R. Ostendorf, G. Kaufel, R. Moritz, J. Wagner, O. Ambacher
Tunable GaAs-based high power tapered amplifiers in an external cavity setup
2009 CLEO/Europe-EQEC 2009-European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference
2008
back to the year overview- J. Wagner, Ch. Y. Wang, C.-C. Röhlig, M. Maier, M. Kunzer, T. Passow, W. Schirmacher, W. Pletschen, V. Cimalla, K. Köhler, O. Ambacher
(AlGaIn) N UV LEDs for integrated metal-oxide based ozone sensors
2008 Light-Emitting Diodes: Research, Manufacturing, and Applications XII, volume: 6910 - R. Ostendorf, G. Kaufel, R. Moritz, M. Mikulla, O. Ambacher, M. T. Kelemen, J. Gilly
10 W high-efficiency high-brightness tapered diode lasers at 976 nm
2008 High-Power Diode Laser Technology and Applications VI, volume: 6876 - A. Leuther, A. Tessmann, H. Massler, R. Losch, M. Schlechtweg, M. Mikulla, O. Ambacher
35 nm metamorphic HEMT MMIC technology
2008 20th International Conference on Indium Phosphide and Related Materials, pages: 1 - 4 - B. Lübbers, G. Kittler, P. Ort, S. Linkohr, D. Wegener, B. Baur, M. Gebinoga, F. Weise, M. Eickhoff, S. Maroldt, A. Schober, O. Ambacher
A novel GaN‐based multiparameter sensor system for biochemical analysis
2008 physica status solidi c, volume: 5, issue: 6, pages: 2361 - 2363 - F. Niebelschütz, V. Cimalla, K. Tonisch, Ch. Haupt, K. Brückner, R. Stephan, M. Hein, O. Ambacher
AlGaN/GaN‐based MEMS with two‐dimensional electron gas for novel sensor applications
2008 physica status solidi c, volume: 5, issue: 6, pages: 1914 - 1916 - S. Shokhovets, O. Ambacher, B. K. Meyer, G. Gobsch
Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors
2008 Phys Rev B, volume: 78, issue: 3 - J. Kuhn, F. Van Raay, R. Quay, R. Kiefer, W. Bronner, M. Seelmann-Eggebert, M. Schlechtweg, M. Mikulla, O. Ambacher, M. Thumm
Balanced microstrip AlGaN/GaN HEMT power amplifier MMIC for X-band applications
2008 European Microwave Integrated Circuit Conference, pages: 95 - 98 - P. Lorenz, V. Lebedev, F. Niebelschütz, S. Hauguth, O. Ambacher, J. A. Schaefer, S. Krischok
Characterization of GaN‐based lateral polarity heterostructures
2008 physica status solidi c, volume: 5, issue: 6, pages: 1965 - 1967 - U. Zhokhavets, H. Hoppe, G. Gobsch, Maher Al-Ibrahim, O. Ambacher, S. Voigt
Dynamical optical investigation of polymer/fullerene composite solar cells
2008 Phys Status Solidi B, volume: 245, issue: 4 - R. Quay, F. van Raay, J. Kuhn, R. Kiefer, P. Waltereit, M. Zorcic, M. Musser, W. Bronner, M. Dammann, M. Seelmann-Eggebert, M. Schlechtweg, M. Mikulla, O. Ambacher, J. Thorpe, K. Riepe, F. van Rijs, M. Saad, L. Harm, T. Rodle
Efficient AlGaN/GaN HEMT Power Amplifiers
2008 European Microwave Integrated Circuit Conference, pages: 87 - 90 - C. Buchheim, R. Goldhahn, G. Gobsch, K. Tonisch, V. Cimalla, F. Niebelschütz, O. Ambacher
Electric field distribution in GaN/AlGaN/GaN heterostructures with with two-dimensional electron and hole gas
2008 Appl Phys Lett, volume: 92, issue: 1 - Ch. Y. Wang, V. Cimalla, Th. Kups, O. Ambacher, M. Himmerlich, S. Krischok
Electrical and optical properties of In2O3 nanoparticles prepared by MOCVD
2008 2nd IEEE International Nanoelectronics Conference, pages: 489 - 492 - V. Lebedev, Ch. Y. Wang, S. Hauguth, V. Polyakov, F. Schwierz, V. Cimalla, T. Kups, F. M. Morales, J. G. Lozano, D. González, M. Himmerlich, J. A. Schaefer, S. Krischok, O. Ambacher
Electron transport properties of indium oxide–indium nitride metal‐oxide‐semiconductor heterostructures
2008 physica status solidi c, volume: 5, issue: 2, pages: 495 - 498 - V. Lebedev, V. M. Polyakov, S. Hauguth-Frank, V. Cimalla, C. Y. Wang, G. Ecke, F. Schwierz, A. Schober, J. G. Lozano, F. M. Morales, D. González, O. Ambacher
Electronic and photoconductive properties of ultrathin InGaN photodetectors
2008 J Appl Phys, volume: 103, issue: 7 - I. Kallfass, A. Tessmann, A. Leuther, M. Kuri, M. Riessle, M. Zink, H. Massler, M. Schlechtweg, O. Ambacher
Enabling compact MMIC-based frontends for millimeter-wave imaging radar and radiometry at 94 and 210 GHz
2008 Millimetre Wave and Terahertz Sensors and Technology, volume: 7117 - G. Pettinari, F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T. H. Kim, S. Choi, A. Brown, V. Lebedev, V. Cimalla, O. Ambacher
Experimental evidence of different hydrogen donors in n-type InN
2008 Phys Rev B, volume: 77, issue: 12 - G. Matthäus, V. Cimalla, B. Pradarutti, S. Riehemann, G. Notni, V. Lebedev, O. Ambacher, S. Nolte, A. Tünnermann
Highly efficient THz emission from differently grown InN at 800 nm and 1060 nm excitation
2008 Opt Commun, volume: 281, issue: 14, pages: 3776 - 3780 - C. Y. Wang, V. Cimalla, V. Lebedev, T. Kups, G. Ecke, S. Hauguth, O. Ambacher, J. G. Lozano, F. M. Morales, D. Gonzalez
InN/In{sub 2}O{sub 3} heterostructures
2008 physica status solidi c, volume: 5, issue: 6 - S. Jebril, M. Elbahri, G. Titazu, K. Subannajui, S. Essa, F. Niebelschütz, C.‐Ch. Röhlig, V. Cimalla, O. Ambacher, B. Schmidt, D. Kabiraj, D. Avasti, R. Adelung
Integration of Thin‐Film‐Fracture‐Based Nanowires into Microchip Fabrication
2008 Small, volume: 4, issue: 12, pages: 2214 - 2221 - F. Niebelschutz, J. Pezoldt, T. Stauden, V. Cimalla, K. Tonisch, K. Bruckner, M. Hein, O. Ambacher, A. Schober
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication
2008 Conference on Optoelectronic and Microelectronic Materials and Devices, pages: 26 - 29 - A. Tessmann, I. Kallfass, A. Leuther, H. Massler, M. Kuri, M. Riessle, M. Zink, R. Sommer, A. Wahlen, H. Essen, V. Hurm, M. Schlechtweg, O. Ambacher
Metamorphic HEMT MMICs and modules for use in a high-bandwidth 210 GHz radar
2008 Ieee J Solid-st Circ, volume: 43, issue: 10, pages: 2194 - 2205 - A. Tessmann, I. Kallfass, A. Leuther, H. Massler, M. Schlechtweg, O. Ambacher
Metamorphic MMICs for operation beyond 200 GHz
2008 European Microwave Integrated Circuit Conference, pages: 210 - 213 - A. Konkin, F. Wendler, F. Meister, H.-K. Roth, A. Aganov, O. Ambacher
N-Methylmorpholine-N-oxide ring cleavage registration by ESR under heating conditions of the Lyocell process
2008 Spectrochim Acta A, volume: 69, issue: 3, pages: 1053 - 1055 - Ch. Y. Wang, M. Ali, Th. Kups, C.-C. Röhlig, V. Cimalla, Th. Stauden, O. Ambacher
NOx sensing properties of In2O3 nanoparticles prepared by metal organic chemical vapor deposition
2008 Sensors and Actuators B: Chemical, volume: 130, issue: 2, pages: 589 - 593 - M. Ali, Ch. Y. Wang, C.-C. Röhlig, V. Cimalla, Th. Stauden, O. Ambacher
NOx sensing properties of In2O3 thin films grown by MOCVD
2008 Sensor Actuat B-chem, volume: 129, issue: 1, pages: 467 - 472 - V. Cimalla, C.-C. Röhlig, J. Pezoldt, M. Niebelschütz, O. Ambacher, K. Brückner, M. Hein, J. Weber, S. Milenkovic, A. J. Smith, A. W. Hassel
Nanomechanics of single crystalline tungsten nanowires
2008 J Nanomater, volume: 2008 - S. Hauguth, V. Lebedev, Ch. Mauder, F. Niebelschütz, H.‐J. Büchner, G. Jäger, O. Ambacher
Novel III‐nitride based transparent photodetectors for standing wave interferometry
2008 Phys Status Solidi A, volume: 205, issue: 8, pages: 2080 - 2084 - G. Ecke, Ch. Y Wang, V. Cimalla, O. Ambacher
Ozone and UV assisted oxidation of InN surfaces
2008 physica status solidi c, volume: 5, issue: 6, pages: 1603 - 1605 - Ch. Wang, Y. Dai, J. Pezoldt, B. Lu, Th. Kups, V. Cimalla, O. Ambacher
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide
2008 Cryst Growth Des, volume: 8, issue: 4, pages: 1257 - 1260 - K. Tonisch, C. Buchheim, F. Niebelschütz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, R. Goldhahn
Piezoelectric actuation of (GaN/) AlGaN/GaN heterostructures
2008 J Appl Phys, volume: 104, issue: 8 - K. Tonisch, C. Buchheim, F. Niebelschütz, M. Donahue, R. Goldhahn, V. Cimalla, O. Ambacher
Piezoelectric actuation of all‐nitride MEMS
2008 physica status solidi c, volume: 5, issue: 6, pages: 1910 - 1913 - O. Ambacher, V. Cimalla
Polarization induced effects in GaN-based heterostructures and novel sensors
2008 Polarization Effects in Semiconductors, pages: 27 - 109 - M. Hofmann, S. Hauguth-Frank, V. Lebedev, O. Ambacher, S. Sinzinger
Sapphire-GaN-based planar integrated free-space optical system
2008 Appl Optics, volume: 47, issue: 16, pages: 2950 - 2955 - M. Niebelschütz, V. Cimalla, O. Ambacher, T. Machleidt, K.‐H. Franke, J. Ristic, J. Grandal, M. A. Sánchez‐García, E. Calleja
Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy
2008 physica status solidi c, volume: 5, issue: 6, pages: 1609 - 1611 - S. Hauguth-Frank, V. Lebedev, K. Tonisch, H. Romanus, Th. Kups, H.-J. Büchner, G. Jäger, O. Ambacher, A. Schober
Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures
2008 MRS Online Proceedings Library Archive, volume: 1076 - F. M. Morales, J. G. Lozano, R. García, V. Lebedev, Ch. Y. Wang, V. Cimalla, O. Ambacher, D. González
Structure of cubic polytype indium nitride layers on top of modified sapphire substrates
2008 physica status solidi c, volume: 5, issue: 2, pages: 514 - 517 - F. M. Morales, J. G. Lozano, R. García, V. Lebedev, S. Hauguth-Frank, V. Cimalla, O. Ambacher, D. González
Study of microstructure and strain relaxation on thin InXGa1−xN epilayers with medium and high In contents
2008 14th European Microscopy Congress, pages: 77 - 78 - A. Konkin, S. Sensfuss, H.-K. Roth, P. Scharff, O. Ambacher
TRESR study of the photo-induced electron transfer in P3DDT/maleic anhydride blend in THF solution under UV flash photolysis
2008 J Mol Liq, volume: 141, issue: 1-2, pages: 54 - 61 - L Kolaklieva, R Kakanakov, V Cimalla, F Niebelschutz, K Tonisch, O Ambacher
The role of Ti/A1 ratio in nanolayered ohmic contacts for GaN/AlGaN HEMTs
2008 26th International Conference on Microelectronics, pages: 221 - 224 - K. Brueckner, F. Niebelschuetz, K. Tonisch, S. Michael, A. Dadgar, A. Krost, V. Cimalla, O. Ambacher, R. Stephan, M. A. Hein
Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
2008 Appl Phys Lett, volume: 93, issue: 17 - S. Hauguth‐Frank, V. Lebedev, H.‐J. Büchner, G. Jäger, O. Ambacher
Ultra‐thin InGaN photodetectors for standing wave interferometry
2008 physica status solidi c, volume: 5, issue: 6, pages: 2117 - 2119
2007
back to the year overview- I. Cimalla, F. Will, K. Tonisch, M. Niebelschütz, V. Cimalla, V. Lebedev, G. Kittler, M. Himmerlich, S. Krischok, J. A. Schaefer, M. Gebinoga, A. Schober, Th. Friedrich, O. Ambacher
AlGaN/GaN biosensor—effect of device processing steps on the surface properties and biocompatibility
2007 Sensor Actuat B-chem, volume: 123, issue: 2, pages: 740 - 748 - V. Cimalla, T. Machleidt, L. Spieß, M. Gubisch, I. Hotovy, H. Romanus, O. Ambacher
Analysis of nanocrystalline films on rough substrates
2007 Ultramicroscopy, volume: 107, issue: 10-11, pages: 989 - 994 - G. Ecke, V. Cimalla, K. Tonisch, V. Lebedev, H. Romanus, O. Ambacher, J. Liday
Analysis of nanostructures by means of Auger electron spectroscopy
2007 Journal of Electrical Engineering, volume: 58, issue: 6 - V. Lebedev, D. Cengher, K. Tonisch, F. Will, I. Cimalla, Ch. Mauder, S. Hauguth, O. Ambacher, F. M. Morales, J. G. Lozano, D. González
Coalescence aspects of III-nitride epitaxy
2007 J Appl Phys, volume: 101, issue: 5 - S. Shokhovets, O. Ambacher, G. Gobsch
Conduction-band dispersion relation and electron effective mass in III-V and II-VI zinc-blende semiconductors
2007 Phys Rev B, volume: 76, issue: 12 - J. G. Lozano, F. M. Morales, R. García, D. González, V. Lebedev, Ch. Y. Wang, V. Cimalla, O. Ambacher
Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer
2007 Appl Phys Lett, volume: 90, issue: 9 - A. Konkin, F. Wendler, F. Meister, H.-K. Roth, A. Aganov, O. Ambacher
Degradation processes in the cellulose/N-methylmorpholine-N-oxide system studied by HPLC and ESR. Radical formation/recombination kinetics under UV photolysis at 77 K
2007 Cellulose, volume: 14, issue: 5 - P. Schley, R. Goldhahn, A. T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, H. Lu, W. J. Schaff, M. Kurouchi, Y. Nanishi, M. Rakel, C. Cobet, N. Esser
Dielectric function and Van Hove singularities for In-rich InxGa1−xN alloys: Comparison of N- and metal-face materials
2007 Phys Rev B, volume: 75, issue: 20 - V. Lebedev, V. Cimalla, F. M. Morales, J.G. Lozano, D. Gonzalez, Ch. Mauder, O. Ambacher
Effect of island coalescence on structural and electrical properties of InN thin films
2007 J Cryst Growth, volume: 300, issue: 1, pages: 50 - 56 - V. Lebedev, Ch. Y. Wang, V. Cimalla, S. Hauguth, T. Kups, M. Ali, G. Ecke, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, V. M. Polyakov, F. Schwierz
Effect of surface oxidation on electron transport in InN thin films
2007 J Appl Phys, volume: 101, issue: 12 - M. Niebelschütz, V. Cimalla, O. Ambacher, T. Machleidt, J. Ristic, E. Calleja
Electrical performance of gallium nitride nanocolumns
2007 Physica E, volume: 37, issue: 1-2, pages: 200 - 203 - M. Niebelschütz, V. Cimalla, O. Ambacher, T. Machleidt, K. H. Franke, J. Ristic, J. Grandal, M. A. Sánchez-García, E. Calleja
Electrically characterization of Group III-Nitride nanocolumns with Scanning Force Microscopy
2007 Modern Research and Educational Topics in Microscopy - J. G. Lozano, F. M. Morales, R. García, V. Lebedev, V. Cimalla, O. Ambacher, D. González
Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers
2007 physica status solidi c, volume: 4, issue: 4, pages: 1454 - 1457 - E. Calleja, J. Grandal, M. A. Sanchez-Garcia, M. Niebelschütz, V. Cimalla, O. Ambacher
Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns
2007 Appl Phys Lett, volume: 90, issue: 26 - J. Pezoldt, Ch. Förster, V. Cimalla, F. Will, R. Stephan, K. Brückner, M. Hein, O. Ambacher
FTIR ellipsometry analysis of the internal stress in SiC/Si MEMS
2007 Materials science forum, volume: 556, pages: 363 - 366 - V. Lebedev, D. Cengher, M. Fischer, K. Tonisch, V. Cimalla, M. Niebelschütz, O. Ambacher
Fabrication of one‐dimensional “trenched” GaN nanowires and their interconnections
2007 Phys Status Solidi A, volume: 204, issue: 10, pages: 3387 - 3391 - A. Somogyi, G. Martinez-Criado, A. Homs, M. A. Hernandez-Fenollosa, D. Vantelon, O. Ambacher
Formation of Si clusters in AlGaN: A study of local structure
2007 Appl Phys Lett, volume: 90, issue: 18 - K. Tonisch, V. Cimalla, F. Niebelschütz, H. Romanus, M. Eickhoff, O. Ambacher
Fully unstrained GaN on sacrificial AlN layers by nano‐heteroepitaxy
2007 physica status solidi c, volume: 4, issue: 7, pages: 2248 - 2251 - K. Bruckner, V. Cimalla, F. Niebelschutz, R. Stephan, K. Tonisch, O. Ambacher, M. A. Hein
Gas pressure sensing based on MEMS resonators
2007 SENSORS, 2007 IEEE, pages: 1251 - 1254 - V. Cimalla, J. Pezoldt, O. Ambacher
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
2007 J Phys D Appl Phys, volume: 40, issue: 20 - K. Tonisch, F. Weise, M. Stubenrauch, V. Cimalla, G. Ecke, F. Will, H. Romanus, S. Mrotzek, H. Hofmeister, M. Hoffmann, D. Hülsenberg, O. Ambacher
Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres
2007 Physica E, volume: 38, issue: 1-2, pages: 40 - 43 - V. Cimalla, B. Pradarutti, G. Matthäus, C. Brückner, S. Riehemann, G. Notnu, S. Nolte, A. Tünnermann, V. Lebedev, O. Ambacher
High efficient terahertz emission from InN surfaces
2007 Phys Status Solidi B, volume: 244, issue: 6, pages: 1829 - 1833 - Ch. Y. Wang, V. Cimalla, Th. Kups, C.-C. Röhlig, Th. Stauden, O. Ambacher, M. Kunzer, T. Passow, W. Schirmacher, W. Pletschen, K. Köhler, J. Wagner
Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes
2007 Appl Phys Lett, volume: 91, issue: 10 - H. Romanus, J. Schadewald, V. Cimalla, M. Niebelschütz, T. Machleidt, K.-H. Franke, L. Spiess, O. Ambacher
Markers prepared by focus ion beam technique for nanopositioning procedures
2007 Microelectron Eng, volume: 84, issue: 3, pages: 524 - 527 - J. Pezoldt, Ch. Förster, Th. Stauden, V. Cimalla, F. M. Morales, C. Zgheib, P. Masri, O. Ambacher
Morphology and Stress Control in UHVCVD of 3C-SiC (100) on Si
2007 Materials science forum, volume: 556, pages: 203 - 206 - M. Himmerlich, S. Krischok, V. Lebedev, O. Ambacher, J. A. Schaefer
Morphology and surface electronic structure of MBE grown InN
2007 J Cryst Growth, volume: 306, issue: 1, pages: 6 - 11 - V. Cimalla, F. Niebelschütz, K. Tonisch, Ch. Förster, K. Brückner, I. Cimalla, T. Friedrich, J. Pezoldt, R. Stephan, M. Hein, O. Ambacher
Nanoelectromechanical devices for sensing applications
2007 Sensor Actuat B-chem, volume: 126, issue: 1, pages: 24 - 34 - V. Cimalla, K. Brückner, A. W. Hassel, M. A. Hein, F. Niebelschütz, M. Niebelschütz, J. von Pezoldt, H. Romanus, C. C. Röhlig, K. Tonisch, J. Weber, O. Ambacher
Nanomechanics with nanowires and nano-electro-mechanical systems
2007 Workshop Development, characterization and industrial application of nanostructured thin films, hard and superhard coatings - K. Tonisch, V. Cimalla, F. Will, F. Weise, M. Stubenrauch, A. Albrecht, M. Hoffmann, O. Ambacher
Nanowire-based electromechanical biomimetic sensor
2007 Physica E, volume: 37, issue: 1-2, pages: 208 - 211 - P. Lorenz, V. Lebedev, R. Gutt, J. A Schaefer, O. Ambacher, St. Krischok
Oxidation of lateral polarity heterostructure GaN
2007 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 42 - Ch. Y. Wang, V. Cimalla, T. Kups, C. Röhlig, H. Romanus, V. Lebedev, J. Pezoldt, T. Stauden, O. Ambacher
Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition
2007 J Appl Phys, volume: 102, issue: 4 - H. Romanus, J. Schadewald, V. Cimalla, M. Niebelschütz, T. Machleidt, K.-H. Franke, L. Spiess, O. Ambacher
Preparation of defined structures on very thin foils for characterization of AFM probes
2007 Microelectron Eng, volume: 84, issue: 3, pages: 528 - 531 - M. Ali, V. Cimalla, V. Lebedev, T. Stauden, C. Wang, G. Ecke, V. Tilak, P. Sandvik, O. Ambacher
Reactively sputtered InxVyOz films for detection of NOx, D2, and O2
2007 Sensor Actuat B-chem, volume: 123, issue: 2, pages: 779 - 783 - V. Cimalla, V. Lebedev, Ch. Y. Wang, M. Ali, G. Ecke, V. M. Polyakov, F. Schwierz, O. Ambacher, H. Lu, W. J. Schaff
Reduced surface electron accumulation at InN films by ozone induced oxidation
2007 Appl Phys Lett, volume: 90, issue: 15 - M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, O. Ambacher
SiC-based FET for detection of NOx and O2 using InSnOx as a gate material
2007 Sensor Actuat B-chem, volume: 122, issue: 1, pages: 182 - 186 - V. Lebedev, G. Cherkashinin, G. Ecke, I. Cimalla, O. Ambacher
Space charge limited electron transport in AlGaN photoconductors
2007 J Appl Phys, volume: 101, issue: 3 - R. Schwarz, R. Cabeja, E. Morgado, M. Niehus, O. Ambacher, C. P. Marques, E. Alves
Stability of GaN films under intense MeV He ion irradiation
2007 Diamond and related materials, volume: 16, issue: 4-7, pages: 1437 - 1440 - K. Brückner, V. Cimalla, F. Niebelschütz, R. Stephan, K. Tonisch, O. Ambacher, M. A. Hein
Strain-and pressure-dependent RF response of microelectromechanical resonators for sensing applications
2007 J Micromech Microeng, volume: 17, issue: 10 - Ch. Wang, V. Lebedev, V. Cimalla, Th. Kups, K. Tonisch, O. Ambacher
Structural studies of single crystalline In2O3 films epitaxially grown on InN(001)
2007 Appl Phys Lett, volume: 90, issue: 22 - M. Himmerlich, Ch. Wang, V. Cimalla, J. A Schaefer, O. Ambacher, St. Krischok
Surface properties of indium oxide and its interaction with ozone for the use as gas sensor
2007 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 42, issue: 4 - V. Cimalla, M. Stubenrauch, F. Weise, M. Fischer, K. Tonisch, M. Hoffmann, O. Ambacher
Suspended nanowire web
2007 Appl Phys Lett, volume: 90, issue: 10 - Th. Kups, Ch. Wang, M. Gubisch, L. Spiess, O. Ambacher
TEM investigation of sputtered and epitaxial grown indium oxide layers for ozone sensors
2007 Microsc Microanal, volume: 13, issue: 406 - Ch. Wang, V. Cimalla, G. Cherkashinin, H. Romanus, M. Ali, O. Ambacher
Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition
2007 Thin Solid Films, volume: 515, issue: 5, pages: 2921 - 2925 - Ch. Y. Wang, V. Cimalla, H. Romanus, Th. Kups, M. Niebelschütz, O. Ambacher
Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition
2007 Thin Solid Films, volume: 515, issue: 16, pages: 6611 - 6614 - T. Machleidt, K.-H. Franke, H. Romanus, V. Cimalla, M. Niebelschütz, L. Spieß, O. Ambacher
Using defined structures on very thin foils for characterizing AFM tips
2007 Ultramicroscopy, volume: 107, issue: 10-11, pages: 1086 - 1090
2006
back to the year overview- S. Sokovets, G. Gobsch, V. Lebedev, O. Ambacher
'Anomalous' pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties
2006 Appl Surf Sci, volume: 253, issue: 1, pages: 224 - 227 - Ch. Y. Wang, V. Cimalla, C.-C. Roehlig, Th. Stauden, F. Niebelschuetz, O. Ambacher, O. Kiesewetter, S. Kittelmann
A new type of highly sensitive portable ozone sensor operating at room temperature
2006 SENSORS, IEEE, pages: 81 - 84 - M. Ali, V. Cimalla, V. Lebedev, V. Tilak, P. M. Sandvik, D. W. Merfeld, O. Ambacher
A study of hydrogen sensing performance of Pt–GaN Schottky diodes
2006 Ieee Sens J, volume: 6, issue: 5, pages: 1115 - 1119 - T. Erb, U. Zhokhavets, H. Hoppe, G. Gobsch, M. Al-Ibrahim, O. Ambacher
Absorption and crystallinity of poly (3-hexylthiophene)/fullerene blends in dependence on annealing temperature
2006 Thin Solid Films, volume: 511, pages: 483 - 485 - J. Pezoldt, Th. Kups, P. Weih, Th. Stauden, O. Ambacher
Atomic Layer Epitaxy of (Si1-xC1-y) Gex+ y Layers on 4H-SiC
2006 Materials science forum, volume: 527, pages: 1559 - 1562 - M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, O. Ambacher
Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger‐Elektronen‐Energie‐Messungen
2006 Materialwiss Werkst, volume: 37, issue: 11, pages: 937 - 940 - J. Pezoldt, Yu. V. Trushin, V. S. Kharlamov, A. A. Schmidt, V. Cimalla, O. Ambacher
Carbon surface diffusion and SiC nanocluster self-ordering
2006 Nucl Instrum Meth B, volume: 253, issue: 1-2, pages: 241 - 245 - S. Shokhovets, G. Gobsch, O. Ambacher
Conduction band parameters of ZnO
2006 Superlattice Microst, volume: 39, issue: 1-4, pages: 299 - 305 - V. Lebedev, F. M. Morales, V. Cimalla, J. G. Lozano, D. González, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy
2006 Superlattice Microst, volume: 40, issue: 4-6, pages: 289 - 294 - C. Buchheim, R. Goldhahn, A.T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, O. Ambacher
Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy
2006 physica status solidi c, volume: 3, issue: 6, pages: 2009 - 2013 - G. Matthaeus, B. Pradarutti, C. Bruckner, St. Riehemann, G. Notni, St. Nolte, V. Cimalla, V. Lebedev, O. Ambacher, A. Tunnermann
Detailed Study of Differently Grown InN Wavers as Strong THz Surface Emitters Excited at 800 nm and 1060 nm
2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, pages: 369 - 369 - R. Goldhahn, P. Schley, A. T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W. J. Schaff
Detailed analysis of the dielectric function for wurtzite InN and In‐rich InAlN alloys
2006 Phys Status Solidi A, volume: 203, issue: 1, pages: 42 - 49 - J. Pezoldt, Ch. Zgheib, V. Lebedev, P. Masri, O. Ambacher
Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
2006 Superlattice Microst, volume: 40, issue: 4-6, pages: 612 - 618 - V. Lebedev, F.M. Morales, H. Romanus, G. Ecke, V. Cimalla, M. Himmerlich, S. Krischok, J.A. Schaefer, O. Ambacher
Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy
2006 physica status solidi c, volume: 3, issue: 6 - V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J.A. Schäfer, O. Ambacher
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
2006 J Appl Phys, volume: 100, issue: 9 - V. Lebedev, V. Cimalla, T. Baumann, O. Ambacher, F. M. Moralez, J. G. Lozano, G. Gonzales
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
2006 J Appl Phys, volume: 100, issue: 9 - G. Cherkashinin, S. Krischok, M. Himmerlich, O. Ambacher, J. Schäfer
Electronic properties of C60/InP(001) heterostructures
2006 J Phys-condens Mat, volume: 18, issue: 43 - S. Shokhovets, G. Gobsch, O. Ambacher
Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors
2006 Phys Rev B, volume: 74, issue: 15 - G. Ecke, M. Niebelschütz, R. Kosiba, U. Rossow, V. Cimalla, J. Liday, P. Worincic, J. Pezoldt, V. Lebedev, O. Ambacher
Fermi Level Analysis of Group III Nitride Semiconductor Device Structures by Auger Peak Position Measurements
2006 J Electr Eng-slovak, volume: 57, issue: 6 - K. Tonisch, F. Niebelschuetz, V. Cimalla, H. Romanus, O. Ambacher
Fully Unstrained GaN on Thick AlN Layers for MEMS Application
2006 MRS Online Proceedings Library Archive, volume: 955 - Cg. Zgheib, L. E. McNeil, P. Masri, Ch. Förster, F. M. Morales, Th. Stauden, O. Ambacher, J. Pezoldt
Ge-modified Si(100) substrates fort he growth of 3C-SiC(100)
2006 Appl Phys Lett, volume: 88, issue: 21 - Ch. Förster, V. Cimalla, V. Lebedev, J. Pezoldt, K. Brueckner, R. Stephan, M. Hein, E. Aperathitis, O. Ambacher
Group III‐nitride and SiC based micro‐and nanoelectromechanical resonators for sensor applications
2006 Phys Status Solidi A, volume: 203, issue: 7, pages: 1829 - 1833 - V. Cimalla, Ch. Förster, D. Cengher, K. Tonisch, O. Ambacher
Growth of AlN nanowires by metal organic chemical vapour deposition
2006 physica status solidi (b), volume: 243, issue: 7, pages: 1476 - 1480 - I. Cimalla, F. Will, K. Tonisch, M. Niebelschütz, V. Cimalla, V. Lebedev, G. Kittler, M. Himmerlich, S. Krischok, J. A. Schaefer, M. Gebinoga, A. Schober, T. Friedrich, O. Ambacher
Impact of device technology processes on the surface properties and biocompatibility of group III nitride based sensors
2006 Materialwiss Werkst, volume: 37, issue: 11, pages: 919 - 923 - M. Hermann, F. Furtmayer, F. M. Morales, O. Ambacher, M. Stutzmann, M. Eickhoff
Impact of silicon incorporation on the formation of structural defects in AlN
2006 J Appl Phys, volume: 100, issue: 11 - B. Pradarutti, G. Matthäus, C. Brückner, S. Riehemann, G. Notni, St. Nolte, V. Cimalla, V. Lebedev, O. Ambacher, A. Tünnermann
InN as THz emitter excited at 1060 nm and 800 nm
2006 Millimeter-Wave and Terahertz Photonics, volume: 6914 - L. H. Dmowski, K. Dybko, J. Plesiewics, T. Siski, H. Lu, W. Schaff, M. Kurouchi, Y. Nanishi, L. Konczewicz, V. Cimalla, O. Ambacher
Localized donor state above the conduction band minimum in
2006 Phys Status Solidi B, volume: 243, issue: 7, pages: 1537 - 1540 - Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, J. Pezoldt
Low Energy Ion Modification of 3C-SiC Surfaces
2006 Materials science forum, volume: 527, pages: 685 - 688 - E. Monroy, J. Zenneck, G. Cherkashinin, O. Ambacher, M. Hermann, M. Stutzmann, M. Eickhoff
Luminescence properties of highly Si-doped AlN
2006 Appl Phys Lett, volume: 88, issue: 7 - Ch. Förster, V. Cimalla, M. Stubenrauch, C. Rockstuhl, K. Brueckner, M. A. Hein, J. Pezoldt, O. Ambacher
Micromachining of novel SiC on Si structures for device and sensor applications
2006 Materials Science Forum, volume: 527-529 - G. Cherkashinien, O. Ambacher, T. Schiffer, G. Schmidt
Mobility edge in hydrogenated amorphous carbon
2006 Appl Phys Lett, volume: 88, issue: 17 - V. Cimalla, V. Lebedev, F. M. Morlaes, R. Goldhahn, O. Ambacher
Model for the thickness dependence of electron concentration in InN films
2006 Appl Phys Lett, volume: 89, issue: 17 - A. A. Schmidt, Yu. V. Trushin, K. L. Safonov, V. S. Kharlamov, D. V. Kulikov, O. Ambacher, J. Pezoldt
Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
2006 Materials Science Forum, volume: 527, issue: 529 - V. Lebedev, F. M. Morales, M. Fischer, M. Himmerlich, S. Krischok, J. A. Schäfer, O. Ambacher
Nanocrystalline AlN: Si field emission arrays for vacuum electronics
2006 Phys Status Solidi A, volume: 203, issue: 7 - St. Voigt, U. Zhokhavets, H. Hoppe, G. Gobsch, M. Al-Ibrahim, O. Ambacher, St. Sensfuss
Optical investigation of P3HT/PCBM bulk heterojunction solar cells by photoinduced absorption spectroscopy
2006 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 41, issue: 1 - V. Cimalla, V. Lebedev, F. M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, O. Ambacher
Origin of n‐type conductivity in nominally undoped InN
2006 Materialwiss Werkst, volume: 37, issue: 11, pages: 924 - 928 - Ch. Wang, V. Cimalla, H. Romanus, T. Kups, G. Ecke, Th. Stauden, M. Ali, V. Lebedev, J. Pezoldt, O. Ambacher
Phase selective growth and properties of rhombohedral and cubic indium oxide
2006 Appl Phys Lett, volume: 89, issue: 1 - K. Tonisch, V. Cimalla, Ch. Foerster, H. Romanus, O. Ambacher, D. Dontsov
Piezoelectric properties of polycrystalline AlN thin films for MEMS application
2006 Sensor Actuat A-phys, volume: 132, issue: 2, pages: 658 - 663 - K. Tonisch, V. Cimalla, Ch. Förster, D. Dontsov, O. Ambacher
Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy
2006 physica status solidi c, volume: 3, issue: 6, pages: 2274 - 2277 - M. Ali, V. Cimalla, V. Lebedev, H. Romanus, V. Tilak, D. Merfeld, P. Sandvik, O. Ambacher
Pt/GaN Schottky diodes for hydrogen gas sensors
2006 Sensor Actuat B-chem, volume: 113, issue: 2, pages: 797 - 804 - V. Cimalla, Ch. Foerster, F. Will, K, Tonisch, K. Brueckner, R. Stephan, M.E. Hein, E. Aperathidis, O. Ambacher
Pulsed mode operation of strained microelectromechanical resonators in air
2006 Appl Phys Lett, volume: 88, issue: 25 - R. Kosiba, J. Liday, G. Ecke, O. Ambacher, J. Breza, P. Vogrincic
Quantitative Auger electron spectroscopy of SiC
2006 Vacuum, volume: 80, issue: 9, pages: 990 - 995 - U. Zhokhavets, T. Erb, G. Gobsch, M. Al-Ibrahim, O. Ambacher
Relation between absorption and crystallinity of poly (3-hexylthiophene)/fullerene films for plastic solar cells
2006 Chem Phys Lett, volume: 418, issue: 4-5, pages: 347 - 350 - M. Fischer, M. Stubenrauch, Th. Kups, H. Romanus, F. M. Morales, G. Ecke, M. Hoffmann, Ch. Knedlik, O. Ambacher, J. Pezoldt
Self organization and properties of Black Silicon
2006 Information technology and electrical engineering-devices and systems, materials and technologies for the future, volume: 51 - V. Cimalla, M. Niebelschütz, G. Ecke, V. Lebedev, O. Ambacher, M. Himmerlich, S. Krischik, J. A. Schäfer, H. Lu, W. J. Schaff
Surface band bending at nominally undoped and Mg‐doped InN by Auger Electron Spectroscopy
2006 Phys Status Solidi A, volume: 203, issue: 1, pages: 59 - 65 - M. Himmerlich, St. Krischok, J. A. Schaefer, V. Lebedev, O. Ambacher
Surface characterization of InN grown by PIMBE
2006 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 41, issue: 1 - V. Cimalla, M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, W. J. Schaff
The conductivity of Mg‐doped InN
2006 physica status solidi c, volume: 3, issue: 6, pages: 1721 - 1724 - G. Cherkashinin, V. Lebedev, R. Wagner, I. Cimalla, O. Ambacher
The performance of AlGaN solar blind UV photodetectors: responsivity and decay time
2006 Phys Status Solidi B, volume: 243, issue: 7 - P. Schley, R. Goldhahn, A. T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W. J. Schaff
Transition energies and Stokes shift analysis for In‐rich InGaN alloys
2006 Phys Status Solidi B, volume: 243, issue: 7, pages: 1572 - 1576 - Ch. Y. Wang, V. Cimalla, O. Ambacher
Tuning of electrical properties of In{sub x}O{sub y} thin films grown by MOCVD for different applications
2006 Materialwiss Werkst, volume: 37, issue: 11 - C. Buchheim, G. Kittler, V. Cimalla, V. Lebedev, M. Fischer, S. Krischok, V. Yanev, M. Himmerlich, G. Ecke, J. A. Schaefer, O. Ambacher
Tuning of surface properties of AlGaN/GaN sensors for nanodroplets and picodroplets
2006 Ieee Sens J, volume: 6, issue: 4, pages: 881 - 886 - I. Cimalla, Ch. Förster, V. Cimalla, V. Lebedev, D. Cengher, O. Ambacher
Wet chemical etching of AlN in KOH solution
2006 physica status solidi c, volume: 3, issue: 6, pages: 1767 - 1770 - M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, O. Ambacher
Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements
2006 J Appl Phys, volume: 100, issue: 7
2005
back to the year overview- A. Schober, G. Kittler, C. Buchheim, A. Majdeddin, V. Cimalla, M. Fischer, V. Yanev, M. Himmerlich, S. Krischok, J. A. Schaefer, H. Romanus, T. Sändig, J. Burgold, F. Weise, H. Wurmus, K. H. Drüe, M. Hintz, H. Thust, M. Gebinoga, M. Kittler, A. Spitznas, E. Gottwald, K. F. Weibezahn, D. Wegener, A. Schwienhorst, O. Ambacher
A novel class of sensors for system integrative concepts in biotechnological applications
2005 Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show - F.M. Morales, Ch. Förster, O. Ambacher, J. Pezoldt
Beta to alpha transition and defects on SiC on Si grown by CVD
2005 Microscopy of Semiconducting Materials, pages: 131 - 134 - M. Al-Ibrahim, S. Sensfuss, J. Utziel, G. Ecke, O. Ambacher
Comparison of normal and inverse poly (3-hexylthiophene)/fullerene solar cell architectures
2005 Sol Energ Mat Sol C, volume: 85, issue: 2, pages: 277 - 283 - K. L. Safonov, Y. V. Trushin, O. Ambacher, J. Pezoldt
Computer simulation of the early stages of nano scale SiC growth on Si
2005 Mater Sci Forum, volume: 483, pages: 169 - 172 - V Lebedev, I Cimalla, V Cimalla, R Wagner, U Kaiser, O Ambacher
Defect related absorption and emission in AlGaN solar‐blind UV photodetectors
2005 physica status solidi (c), volume: 2, issue: 4, pages: 1360 - 1365 - Ch. Zheib, M. Kazan, P. Weih, O. Ambacher, P. Masri, J. Pezoldt
Effect of Ge incorporation on stoichiometric composition of 3C‐SiC thin films grown on Si (111) substrates
2005 physica status solidi (c), volume: 2, issue: 4, pages: 1284 - 1287 - V. Lebedev, V. Cimalla, U. Kaiser, Ch. Foerster, J. Pezoldt, J. Biskupek, O. Ambacher
Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si (111)
2005 J Appl Phys, volume: 97, issue: 11 - M. Al-Ibrahim, O. Ambacher, S. Sensfuss, G. Gobsch
Effects of solvent and annealing on the improved performance of solar cells based on poly (3-hexylthiophene): fullerene
2005 AIP, volume: 86, issue: 20, page: 201120 - K. Brueckner, Ch. Forster, K. Tonisch, V. Cimalla, O. Ambacher, R. Stephan, K. Blau, M. A. Hein
Electromechanical resonances of SiC and AlN beams under ambient conditions
2005 European Microwave Conference, volume: 3 - Ch. Förster, V. Cimalla, E. Aperathitis, K. Brückner, R. Stephan, M. Hein, J. Pezoldt, O. Ambacher
Fabrication of 3C-SiC/Si MEMS and NEMS for sensor applications
2005 HeT-SiC-05 - P. Weih, H. Romanus, Th. Stauden, L. Spieß, O. Ambacher, J. Pezoldt
Growth of 3C-(Si1-xC1-Y) Gex+ y layers on 4H-SiC by molecular beam epitaxy
2005 Mater Sci Forum, volume: 483, pages: 173 - 176 - A. A. Schmidt, V. S. Kharlamov, K. L. Safonov, Y. V. Trushin, E. E. Zhurkin, V. Cimalla, O. Ambacher, J. Pezoldt
Growth of three-dimensional SiC clusters on Si modelled by KMC
2005 Comp Mater Sci, volume: 33, issue: 1-3 - C. Rockstuhl, H.-P. Herzig, Ch. Förster, A. Leycuras, O. Ambacher, J. Pezoldt
Infrared gratings based on SiC/Si-heterostructures
2005 Mater Sci Forum, volume: 483-485, pages: 433 - 436 - P. Weih, Th. Stauden, G. Ecke, S. Shokhovets, Ch. Zheib, M. Voelskow, W. Skorupa, O. Ambacher, J. Pezoldt
Ion beam synthesis of 3C–(Si1–xC1–y)Gex+y solid solutions
2005 Phys Status Solidi A, volume: 202, issue: 4, pages: 545 - 549 - Ch. Förster, V. Cimalla, O. Ambacher, J. Pezoldt
Low temperature chemical vapor deposition of 3C-SiC on Si substrates
2005 Mater Sci Forum, volume: 283, pages: 201 - 204 - Ch. Förster, V. Cimalla, K. Brückner, M. Hein, J. Pezoldt, O. Ambacher
Micro-electromechanical systems based on 3C-SiC/Si heterostructures
2005 Mat Sci Eng C-bio S, volume: 25, issue: 5-8, pages: 804 - 808 - S. Shokhovets, G. Gobsch, O. Ambacher
Momentum matrix element and conduction band nonparabolicity in wurtzite GaN
2005 Appl Phys Lett, volume: 86, issue: 16 - V. Cimalla, V. Lebedev, U. Kaiser, R. Goldhahn, Ch. Förster, J. Pezoldt, O. Ambacher
Polytype control and properties of AlN on silicon
2005 physica status solidi (c), volume: 2, issue: 7, pages: 2199 - 2203 - Ch. Förster, V. Cimalla, K. Brueckner, V. Lebedev, R. Stephan, M. Hein, O. Ambacher
Processing of novel SiC and group III‐nitride based micro‐and nanomechanical devices
2005 Phys Status Solidi A, volume: 202, issue: 4, pages: 671 - 676 - Ch. Zgheib, L. E. McNeil, M. Kazan, P. Masri, F. M. Morales, O. Ambacher, J. Pezoldt
Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si (111)
2005 Appl Phys Lett, volume: 87, issue: 4 - L. H. Dmowski, J. A. Piesiewicz, T. Suski, H. Lu, W. Schaff, L. Konczewicz, V. Cimalla, O. Ambacher
Resonant localized donor state above the conduction band minimum in InN
2005 Appl Phys Lett, volume: 86, issue: 26 - P. Schley, R. Goldhahn, G. Gobsch, V. Cimalla, O. Ambacher, C. Cobet, N. Esser, J. Furthmueller, F. Bechstedt, H. Lu, W. J. Schaff
Selection rules for optical transitions of wurtzite InN
2005 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 40, issue: 2 - F.M. Morales, P. Weih, Ch. Wang, Th. Stauden, O. Ambacher, J. Pezoldt
Strain relaxation and void reduction in SiC on Si by Ge predeposition
2005 Microscopy of Semiconducting Materials, pages: 135 - 138 - J. Pezoldt, Ch. Zgheib, Ch. Förster, F.M. Morales, G. Cherkachinin, Ch. Wang, A. Leycuras, G. Ferro, Y. Monteil, I. Cimalla, O. Ambacher, P. Masri
Stress design in 3C-SiC/Si heteroepitaxial systems
2005 HeT-SiC-05 - V. Cimalla, G. Ecke, M. Niebelschütz, O. Ambacher, R. Goldhahn, H. Lu, W. J. Schaff
Surface conductivity of epitaxial InN
2005 physica status solidi (c), volume: 2, issue: 7, pages: 2254 - 2257 - V. Lebedev, F. M. Morales, H. Romanus, S. Krischok, G. Ecke, V. Cimalla, M. Himmerlich, T. Stauden, D. Cengher, O. Ambacher
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
2005 J Appl Phys, volume: 98, issue: 9 - S. Shokhovets, G. Gobsch, O. Ambacher
kp parameters of Wurtzite GaN
2005 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 40, issue: 2 - F. M. Morales, Ch. Förtser, O. Ambacher, J. Pezoldt
α-SiC-β-SiC heteropolytype structures on Si (111)
2005 Appl Phys Lett, volume: 87, issue: 20
2004
back to the year overview- 1P. Weih, V. Cimalla, Th. Stauden, R. Kosiba, G. Ecke, L. Spiess, H. Romanus, M.Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt
3C‐SiC: Ge alloys grown on Si (111) substrates by SSMBE
2004 physica status solidi (c), volume: 1, issue: 2, pages: 347 - 350 - R. Goldhahn, V. Cimalla, O. Ambacher, Ch. Cobet, W. Richter, N. Esser, H. Lu, W. J. Schaff
Anisotropy of the dielectric function for hexagonal InN
2004 Highlights / Annual report 2003 // Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H - R. Goldhahn, A. T. Winzer, V. Cimalla, O. Ambacher, C. Cobet, W. Richter, N. Esser, J. Furthmüller, F. Bechstedt, H. Lu, W. J. Schaff
Anisotropy of the dielectric function for wurtzite InN
2004 Superlattice Microst, volume: 36, issue: 4-6, pages: 591 - 597 - R. Kosiba, J. Liday, G. Ecke, O. Ambacher, J. Breza
Auger electron spectroscopy of silicon carbide
2004 Journal of ELECTRICAL ENGINEERING, volume: 55, pages: 269 - 272 - F. Bechstedt, J. Furthmüller, O. Ambacher, R. Goldhahn
Comment on “Mie Resonances, Infrared Emission, and the Band Gap of InN”
2004 Phys Rev Lett, volume: 93, issue: 26 - V. Cimalla, U. Kaiser, I. Cimalla, G. Ecke, J. Pezoldt, L. Spiess, O. Ambacher, H. Lu, W. Schaff
Cubic InN on r-plane sapphire
2004 Superlattice Microst, volume: 36, issue: 4-6, pages: 487 - 495 - Ch. Förster, V. Cimalla, R. Kosiba, G. Ecke, P. Weih, O. Ambacher, J. Pezoldt
Etching of SiC with fluorine ECR plasma
2004 Mater Sci Forum, volume: 457, pages: 821 - 824 - V. Lebedev, I. Cimalla, U. Kaiser, O. Ambacher
Gap state absorption in AlGaN photoconductors and solar‐blind photodetectors
2004 physica status solidi (c), volume: 1, issue: 2, pages: 233 - 237 - S Daniš, V Holý, Z Zhong, G Bauer, O Ambacher
High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers
2004 Appl Phys Lett, volume: 85, issue: 15, pages: 3065 - 3067 - Ch. Förster, F. Schnabel, P. Weih, Th. Stauden, O. Ambacher, J. Pezoldt
In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces
2004 Thin Solid Films, volume: 455, pages: 695 - 699 - F. M. Morales, Ch. Zgheib, SI. Molina, D. Araújo, R. Garcia, C. Fernandez, A. Sanz-Hervas, P. M. Masri, P. Weih, Th. Stauden, O. Ambacher, J. Pezoldt
Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si (111)
2004 Mater Sci Forum, volume: 457, pages: 297 - 300 - Ch. Zgheib, Ch. Förster, P. Weih, V. Cimalla, M. Kazan, P. Masri, O. Ambacher, J. Pezoldt
Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces
2004 Thin Solid Films, volume: 455, pages: 183 - 186 - T. Fröhlich, P. Scharff, W. Schliefke, H. Romanus, V. Gupta, C. Siemund, O. Ambacher, L. Spiess
Insertion of C60 into multi-wall carbon nanotubes – a synthesis of C60 embeded in MWCNT
2004 Carbon, volume: 42, issue: 12-13, pages: 2759 - 2762 - S. Krischok, V. Yanev, O. Balykov, M. Himmerlich, J. A. Schäfer, R. Kosiba, G. Ecke, I. Cimalla, V. Cimalla, O. Ambacher, H. Lu, W. J. Schaff, L. F. Eastman
Investigations of MBE grown InN and the influence of sputtering on the surface composition
2004 Surf Sci, volume: 566, pages: 849 - 855 - A. A. Schmidt, K. L. Safonov, Yu. V. Trushin, V. Cimalla, O. Ambacher, J. Pezoldt
Kinetic Monte Carlo simulation of SiC nucleation on Si (111)
2004 Phys Status Solidi A, volume: 201, issue: 2, pages: 333 - 337 - V. Cimalla, J. Pezoldt, Th. Stauden, A.A. Schmidt, K. Zekentes, O. Ambacher
Lateral alignment of SiC dots on Si
2004 physica status solidi (c), volume: 1, issue: 2, pages: 337 - 340 - V. Cimalla, A. A. Schmidt, Th. Stauden, K. Zekentes, O. Ambacher, J. Pezoldt
Linear alignment of SiC dots on silicon substrates
2004 J Vac Sci Technol B, volume: 22, issue: 5, pages: L20 - L23 - C. Buchheim, A. T. Winzer, R. Goldhahn, G. Gobsch, O. Ambacher, A. Link, M. Eickhoff, M. Stutzmann
Photoreflectance studies of (Al) Ga-and N-face AlGaN/GaN heterostructures
2004 Thin Solid Films, volume: 450, issue: 1, pages: 155 - 158 - M. Ali, V. Cimalla, O. Ambacher, V. Tilak, P. Sandvik, D. Merfeld
Pt/GaN based Schottky diodes for gas sensing applications
2004 SENSORS, pages: 959 - 962 - J. Pezoldt, Ch. Zgheib, P. Masri, M. Averous, F.M. Morales, R. Kosiba, G. Ecke, P. Weih, O. Ambacher
SIMS investigation of the influence of Ge pre‐deposition on the interface quality between SiC and Si
2004 Surface and Interface Analysis: An International Journal devoted to the development and application of techniques for the analysis of surfaces, interfaces and thin films, volume: 36, issue: 8, pages: 969 - 972 - V. Cimalla, A. A. Schmidt, Ch. Förster, K. Zekentes, O. Ambacher, J. Pezoldt
Self-organized SiC nanostructures on silicon
2004 Superlattice Microst, volume: 36, issue: 1-3, pages: 345 - 351 - C. Foerster, V. Cimalla, V. Lebedev, D. Cengher, O. Ambacher, K. Brueckner, R. Stephan, M.A. Hein
SiC/Si and AlN/Si heterostructures for microelectromechanical RF sensors
2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748), volume: 2, pages: 371 - 374 - R. Kosiba, G. Ecke, V. Cimalla, L. Spieß, S. Krischok, J. A. Schaefer, O. Ambacher, W. J. Schaff
Sputter depth profiling of InN layers
2004 Nuclear Instruments and Methods in Physics Research Section B, volume: 215, issue: 3-4, pages: 486 - 494 - Ch. Zgheib, P. M Masri, P. Weih, O. Ambacher, J. Pezoldt
Stress control in 3C-SiC films grown on Si (111)
2004 Mater Sci Forum, volume: 457, pages: 301 - 304 - T. Erb, S. Raleva, U. Zhokhavets, G. Gobsch, B. Stühn, M. Spode, O. Ambacher
Structural and optical properties of both pure poly (3-octylthiophene)(P3OT) and P3OT/fullerene films
2004 Thin Solid Films, volume: 450, issue: 1, pages: 97 - 100 - P. Weih, V. Cimalla, Th. Stauden, R. Kosiba, L. Spiess, H. Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt
Structure and composition of 3C-SiC: Ge alloys grown on Si (111) substrates by SSMBE
2004 Mater Sci Forum, volume: 457, pages: 293 - 296 - H. Herrera, A. Cremades, J. Piqueras, M. Stutzmann, O. Ambacher
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy
2004 J Appl Phys, volume: 95, issue: 10, pages: 5305 - 5310 - C. Buchheim, V. Lebedev, V. Yanev, G. Kittler, M. Fischer, G. Ecke, O. Ambacher, V. Cimalla, S. Krischok, J.A. Schaefer
Surface modifications of AlGaN/GaN sensors for water based nano-and picodroplets [chemical and biosensors]
2004 SENSORS, pages: 1007 - 1010 - S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, M. Eickhoff
Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance
2004 Thin Solid Films, volume: 450, issue: 1, pages: 163 - 166 - F. M. Morales, Ch. Zgheib, S. I. Molina, D. Araújo, R. García, C. Fernández, A. Sanz‐Hervás, P. MasriF. M. Morales Ch., Zgheib S. I. Molina D., Araújo R. García C., Fernández A. Sanz‐Hervás, P. Masri, P. Weih, Th. Stauden, V. Cimalla, O. Ambacher, J. Pezoldt
The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon
2004 physica status solidi (c), volume: 1, issue: 2, pages: 341 - 346 - G. Martinez-Criado, C. Miskys, U. Karrer, O. Ambacher, M. Stutzmann
Two-dimensional electron gas recombination in undoped AlGaN/GaN heterostructures
2004 Jpn J Appl Phys, volume: 43, issue: 6R - M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, M. Eickhoff
Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes
2004 physica status solidi (c), volume: 1, issue: 8, pages: 2210 - 2227
2003
back to the year overview- C. E. Nebel, C. R. Miskys, J. A. Garrido, M. Hermann, O. Ambacher, M. Eickhoff, M. Stutzmann
AlN/Diamond np-junctions
2003 Diam Relat Mater, volume: 12, issue: 10-11, pages: 1873 - 1876 - C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, M. Stutzmann
AlN/diamond heterojunction diodes
2003 Appl Phys Lett, volume: 82, issue: 8, pages: 290 - 292 - R. Kosiba, G. Ecke, J. Liday, J. Breza, O. Ambacher
Auger depth profiling and factor analysis of sputter induced altered layers in SiC
2003 Journal of Electrical Engineering, volume: 54, issue: 1, pages: 52 - 56 - R. Kosiba, G. Ecke, J. Liday, J. Breza, O. Ambacher
Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
2003 Appl Surf Sci, volume: 220, issue: 1-4, pages: 304 - 312 - T Graf, M Gjukic, L Görgens, O Ambacher, MS Brandt, M Stutzmann
Charge transfer at the Mn acceptor level in GaN
2003 J Supercond, volume: 16, issue: 1, pages: 83 - 86 - V. Cimalla, Ch. Förster, G. Kittler, I. Cimalla, R. Kosiba, G. Ecke, O. Ambacher, R. Goldhahn, S. Shokhovets, A. Georgakilas, H. Lu, W. Schaff
Correlation between strain, optical and electrical properties of InN grown by MBE
2003 physica status solidi (c), volume: 7, pages: 2818 - 2821 - O. Ambacher, M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, W. Schaff, V. Tilak, L. F. Eastman
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003 physica status solidi (c), volume: 6, pages: 1878 - 1907 - M. Eickhoff, J. Schalwig, O. Weidmann, L. Görgens, R. Neuberger, M. Hermann, G. Steinhoff, B. Baur, G. Müller, O. Ambacher, M. Stutzmann
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications
2003 physica status solidi (c), volume: 6, pages: 1908 - 1918 - F. Bechstedt, J. Furthmüller, M. Ferhat, L. K. Teles, L. M. R. Scolfaro, J. R. Leite, V. Yu Davydov, O. Ambacher, R. Goldhahn
Energy gap and optical properties of InxGa1-xN
2003 Phys Status Solidi A, volume: 195 - S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, M. Eickhoff, U. Karrer
Exciton quenching in Pt/GaN Schottky diodes with Ga-and N-face polarity
2003 Appl Phys Lett, volume: 82, issue: 11, pages: 1712 - 1714 - C. R. Miskys, M. K. Kelly, O. Ambacher, M. Stutzmann
Freestanding GaN‐substrates and devices
2003 physica status solidi (c), volume: 6, pages: 1627 - 1650 - M. Drakopoulos, J. Zegenhagen, T.L. Lee, A. Snigirev, I. Snigireva, V. Cimalla, O. Ambacher
GaN polarity domains spatially resolved by x-ray standing wave microscopy
2003 J Phys D Appl Phys, volume: 36, issue: 10A - T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. Görgens, J. B. Phillip, O. Ambacher
Growth and characterization of GaN: Mn epitaxial films
2003 J Appl Phys, volume: 93, issue: 12, pages: 9697 - 9702 - H. Lu, W. J. Schaff, L. F. Eastman, J. Wu, W. Walukiewicz, V. Cimalla, O. Ambacher
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
2003 Appl Phys Lett, volume: 83, issue: 6 - V. Cimalla, J. Pezoldt, G. Ecke, R. Kosiba, O. Ambacher, L. Spieß, G. Teichert, H. Lu, W. Schaff
Growth of cubic InN on r-plane sapphire
2003 Appl Phys Lett, volume: 83, issue: 17, pages: 3468 - 3470 - H. Lu, W. J Schaff, L. F. Eastman, V. Cimalla, J. Pezoldt, O. Ambacher, J. Wu, W. Walukiewicz
Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy
2003 MRS Online Proceedings Library Archive, volume: 798 - Petia Weih, Volker Cimalla, Christian Förster, Jörg Pezoldt, Thomas Stauden, Lothar Spieß, Henry Romanus, M Hermann, M Eickhoff, Pierre M Masri, Oliver Ambacher
High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si (111) substrates
2003 Mater Sci Forum, volume: 433, pages: 233 - 236 - V. Tilak, M. Ali, V. Cimalla, V. Manivannan, P. Sandvik, J. Fedison, O. Ambacher, D. Merfeld
Influence of metal thickness to sensitivity of Pt/GaN Schottky diodes for gas sensing applications
2003 MRS Online Proceedings Library Archive, volume: 798 - D. Jena, S. Heikman, J. S. Speck, U. K. Mishra, A. Link, O. Ambacher
Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization‐doped 3D electron slabs in graded‐AlGaN
2003 physica status solidi (c), volume: 7, pages: 2339 - 2342 - D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, O. Ambacher
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN
2003 Phys Rev B, volume: 67, issue: 15 - M. Park, J. J. Cuomo, B. Rodriguez, W. Yang, R. J. Nemanich, O. Ambacher
Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures
2003 J Appl Phys, volume: 93, issue: 12, pages: 9542 - 9547 - N. V. Joshi, H. Medina, A. Cantarero, O. Ambacher
Mid gap photoluminescence from GaN: Mn, a magnetic semiconductor
2003 Journal of Physics and Chemistry of Solids, volume: 64, pages: 1685 - 1689 - A. Cros, N. V. Joshi, T. Smith, A. Cantarero, G. Martínez‐Criado, O. Ambacher, M. Stutzmann
Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire
2003 physica status solidi (c), volume: 7, pages: 2699 - 2702 - W.-C. Yang, B. J. Rodriguez, M. Park, R. J. Nemanich, O. Ambacher, V. Cimalla
Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures
2003 J Appl Phys, volume: 94, issue: 9, pages: 5720 - 5725 - A. T. Winzer, R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, U. K. Mishra, J. S. Speck
Photoreflectance studiesof N‐and Ga‐face AlGaN/GaN heterostructures confininga polarisation induced 2DEG
2003 Phys Status Solidi B, volume: 240, issue: 2, pages: 380 - 383 - D. Jena, S. Heikman, A. Gossard, J. Speck, U. Mishra, A. Link, O. Ambacher
Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors
2003 APS, volume: 2003 - V Lebedev, J. Pezoldt, V. Cimalla, J. Jinschek, F. M. Morales, O. Ambacher
Preparation of Epitaxial Templates for Molecular Beam Epitaxy of III‐Nitrides on Silicon Substrates
2003 physica status solidi (c), volume: 1, pages: 183 - 187 - F. Schwierz, O. Ambacher
Recent advances in GaN HEMT development
2003 The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003., pages: 204 - 209 - T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, O. Ambacher
Spin resonance of Mn2+ in wurtzite GaN and AlN films
2003 Phys Rev B, volume: 67, issue: 16 - R. Kosiba, G. Ecke, O. Ambacher, M. Menyhard
Sputtering of SiC with low energy He and Ar ions under grazing incidence
2003 Radiat Eff Defect S, volume: 158, issue: 10, pages: 721 - 730 - G. Martı́nez-Criado, A. Cros, A. Cantarero, N. V. Joshi, O. Ambacher, M. Stutzmann
Study of inversion domain pyramids formed during the GaN: Mg growth
2003 Solid State Electron, volume: 47, issue: 3, pages: 565 - 568 - Yu. V. Thrushin, K. L. Safonov, O. Ambacher, J. Pezoldt
The transition from 2D to 3D nanoclusters of silicon carbide on silicon
2003 Tech Phys Lett+, volume: 29, issue: 8, pages: 663 - 665 - J. Gleize, A. di Carlo, P. Lugli, J. M. Jancu, R. Scholz, O. Ambacher, D. Gerthsen, E. Hahn
Tight‐Binding Simulation of an InGaN/GaN Quantum Well with indium Concentration Fluctuation
2003 physica status solidi (c), volume: 1, pages: 298 - 301 - G. Martinez‐Criado, A. Cros, A. Cantarero, U. Karrer, O. Ambacher, C. R. Miskys, M. Stutzmann
Two‐Dimensional Electron Gas Effects on the Photoluminescence from a Nonintentionally Doped AlGaN/GaN Heterojunction
2003 physica status solidi (c), volume: 1, pages: 392 - 396
2002
back to the year overview- Fiorentini Vincenzo, Bernardini Fabio, Ambacher Oliver
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
2002 AIP, volume: 80, issue: 7, pages: 1204 - 1206 - J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann
Gas sensitive GaN/AlGaN-heterostructures
2002 Sensors and Actuators B: Chemical, volume: 87, issue: 3, pages: 425 - 430 - Ambacher O, Majewski J, Miskys C, Link Al, Hermann M, Eickhoff M, Stutzmann M, Bernardini Fabio, Fiorentini Vincenzo, Tilak V
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures
2002 IOP Publishing, volume: 14, issue: 13, page: 3399 - T. Graf, M. Gjukic, M. S. Brandt, M. Stutzmann, O. Ambacher
The Mn3+/2+ acceptor level in group III-nitrides
2002 Appl Phys Lett, volume: 81, issue: 27, pages: 5159 - 5161
2001
back to the year overview- Eastman Lester F, Tilak Vinayak, Smart J, Green Bruce M, Chumbes Eduardo M, Dimitrov Roman, Kim Hyungtak, Ambacher Oliver S, Weimann N, Prunty T
Undoped AlGaN/GaN HEMTs for microwave power amplification
2001 IEEE, volume: 48, issue: 3, pages: 479 - 485
2000
back to the year overview- Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Sierakowski AJ, Schaff WJ, Eastman LF
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2000 AIP, volume: 87, issue: 1, pages: 334 - 344
1999
back to the year overview- Kelly Michael K, Vaudo Robert P, Phanse Vivek M, Görgens Lutz, Ambacher Oliver, Stutzmann Martin
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
1999 IOP Publishing, volume: 38, issue: 3A, page: L217 - Ambacher O., Smart J., Shealy J. R., Weimann N.G., Chu K., Murphy M.
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
1999 J Appl Phys, volume: 85, issue: 6, pages: 3222 - 3233
1998
back to the year overview- Metzger T, Höpler R, Born E, Ambacher O, Stutzmann M, Stömmer R, Schuster M, Göbel H, Christiansen S, Albrecht M
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
1998 Taylor & Francis, volume: 77, issue: 4, pages: 1013 - 1025 - Ambacher Oliver
Growth and applications of group III-nitrides
1998 IOP Publishing, volume: 31, issue: 20, page: 2653
1997
back to the year overview- Brunner D, Angerer H, Bustarret E, Freudenberg F, Höpler R, Dimitrov R, Ambacher O, Stutzmann M
Optical constants of epitaxial AlGaN films and their temperature dependence
1997 AIP, volume: 82, issue: 10, pages: 5090 - 5096
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