Publications
Years: 2025 | 2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1998 | 1997
2025
- Afshar, Niloofar, Yassine, Mohamed Fadi, Ambacher, Oliver
A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications
2025 Frontiers in materials, Frontiers, volume: 12, page: 1526968 - Mihalic, Saskia, Wade, Elisa, Ott, Philipp, Ambacher, Oliver
Temperature-dependent properties of wurtzite and rock salt Al1−xScxN for applications in BAW resonators
2025 Journal of physics, IOP Publishing, volume: 58, issue: 5, page: 053001
2024
- Fichtner, Simon, Yassine, Mohamed Fadi, Walle, Chris G. van de, Ambacher, Oliver
Clarification of the spontaneous polarization direction in crystals with wurtzite structure
2024 Applied physics letters, AIP Publishing, volume: 125, issue: 4, page: 040501 - Sundarapandian, Balasubramanian, Tran, Dat Q., Kirste, Lutz, Straňák, Patrik, Graff, Andreas, Prescher, Mario, Nair, Akash, Raghuwanshi, Mohit, Darakchieva, Vanya, Paskov, Plamen P., Ambacher, Oliver
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
2024 Applied physics letters, AIP Publishing, volume: 124, issue: 18, page: 182101 - Pupyrev, Pavel D., Mihalic, Saskia, Nair, Akash, Straňák, Patrik, Mayer, Elena, Hörich, Florian, Dadgar, Armin, Strittmatter, André, Ambacher, Oliver, Mayer, Andreas
Elastic properties of rock salt ScN thin films investigated by laser ultrasound
2024 Journal of applied physics, American Inst. of Physics, volume: 136, issue: 23, page: 235103 - Afshar, Niloofar, Yassine, Mohamed Fadi, Yassine, Ali, Maier, Niklas, Ambacher, Oliver
Electrical and structural characterization of YAlN at high alloy concentrations
2024 Journal of applied physics, American Inst. of Physics, volume: 136, issue: 18, page: 185103 - Yassine, Mohamed Fadi, Yassine, Ali, Nair, Akash, Sundarapandian, Balasubramanian, Afshar, Niloofar, Kirste, Lutz, Fichtner, Simon, Ambacher, Oliver
Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures
2024 Journal of applied physics, American Inst. of Physics, volume: 135, issue: 15, page: 155702 - Ciprian, Lucia, Mihalic, Saskia, Lüttich, Christopher, Hörich, Florian, Wade, Elisa, Christian, Björn P., Dadgar, Armin, Ambacher, Oliver
Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction
2024 Applied physics letters, American Inst. of Physics, volume: 124, issue: 5, page: 052203 - Streicher, Isabel Maria, Leone, Stefano, Zhang, Meiling, Tlemcani, Taoufik Slimani, Bah, Micka, Straňák, Patrik, Kirste, Lutz, Prescher, Mario, Yassine, Ali, Alquier, Daniel, Ambacher, Oliver
Understanding interfaces in AlScN/GaN heterostructures
2024 Advanced functional materials, Wiley, volume: 34, issue: 39, page: 2403027
2023
- Bürger, Jasmin-Clara, Gutsch, Sebastian, Wollersen, Vanessa, Wang, Di , Christian, Björn P., Fu, Zhe, Ambacher, Oliver, Kübel, Christian, Zacharias, Margit
Defect location in laterally aligned tin oxide nanowires: the role of growth direction, interface dimensionality, and catalyst
2023 The journal of physical chemistry. C, Energy, materials, and catalysis, American Chemical Society (ACS), volume: 127, issue: 22, page: 10871-10877 - Streicher, Isabel, Leone, Stefano, Manz, Christian, Kirste, Lutz, Prescher, Mario, Waltereit, Patrick, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver
Effect of AlN and AlGaN interlayers on AlScN/GaN heterostructures grown by metal–organic chemical vapor deposition
2023 Crystal growth & design, American Chemical Society (ACS), volume: 23, issue: 2, page: 782-791 - Streicher, Isabel, Leone, Stefano, Kirste, Lutz, Manz, Christian, Straňák, Patrik, Prescher, Mario, Waltereit, Patrick, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver
Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition
2023 Physica status solidi. Rapid research letters, Wiley, volume: 17, issue: 2, page: 2200387 - Yassine, Mohamed Fadi, Feil, Niclas Manuel, Nair, Akash, Graff, Andreas, Driad, Rachid, Benkhelifa, Fouad, Wade, Elisa, Ambacher, Oliver
In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators
2023, Semiconductors and semimetals, Elsevier, volume: 114, page: 101-118, Elsevier, - Sundarapandian, Balasubramanian, Yassine, Ali, Kirste, Lutz, Baeumler, Martina, Straňák, Patrik, Fisslthaler, Evelin, Prescher, Mario, Yassine, Mohamed Fadi, Nair, Akash, Raghuwanshi, Mohit, Ambacher, Oliver
Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy
2023 Journal of applied physics, AIP Publishing, volume: 134, issue: 18, page: 185107 - Wöhrle, Dennis, Burger, Bruno, Ambacher, Oliver
Power module design for gan transistors enabling high switching speed in multi‐kilowatt applications
2023 Energy technology, Wiley, volume: 11, issue: 12, page: 2300460 - Ambacher, Oliver, Mihalic, Saskia, Yassine, Mohamed Fadi, Yassine, Ali, Afshar, Niloofar, Christian, Björn P.
Review: Structural, elastic, and thermodynamic properties of cubic and hexagonal ScxAl1−xN crystals
2023 Journal of applied physics, AIP Publishing, volume: 134, issue: 16, page: 160702 - Mihalic, Saskia, Wade, Elisa, Lüttich, Christopher, Hörich, Florian, Sun, Cheng, Fu, Zhe, Christian, Björn P., Strittmatter, André, Ambacher, Oliver
Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si
2023 Journal of applied physics, AIP Publishing, volume: 134, issue: 15, page: 155107
2022
- Heinz, Felix, Thome, Fabian, Leuther, Arnulf, Ambacher, Oliver
C-band low-noise amplifier MMIC with an average noise temperature of 44.5 K and 24.8 mW power consumption
2022 - Streicher, Isabel, Leone, Stefano, Kirste, Lutz, Ambacher, Oliver
Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition
2022 Journal of vacuum science & technology. A, Inst., volume: 40, issue: 3, page: 032702 - Ambacher, Oliver, Yassine, Ali, Yassine, Mohamed Fadi, Mihalic, Saskia, Wade, Elisa, Christian, Björn P.
Electron accumulation and distribution at interfaces of hexagonal ScxAl1−xN/GaN- and ScxAl1−xN/InN-heterostructures
2022 Journal of applied physics, AIP, volume: 131, issue: 24, page: 245702 - Ambacher, Oliver, Mihalic, Saskia, Wade, Elisa, Yassine, Mohamed Fadi, Yassine, Ali, Feil, Niclas Manuel, Christian, Björn P.
Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal ScxAl1−xN crystals
2022 Journal of applied physics, AIP Publishing, volume: 132, issue: 17, page: 175101 - Yassine, Mohamed Fadi, Nair, Akash, Fammels, Jannick, Wade, Elisa, Fu, Zhe, Yassine, Ali, Kirste, Lutz, Ambacher, Oliver
Influence of structural properties on the ferroelectric behavior of hexagonal AlScN
2022 Journal of applied physics, AIP Publishing, volume: 132, issue: 11, page: 114101 - Köhler, Klaus, Pletschen, Wilfried, Kirste, Lutz, Leone, Stefano, Müller, Stefan, Aidam, Rolf, Bronner, Wolfgang, Brückner, Peter, Waltereit, Patrick, Polyakov, Vladimir, Ambacher, Oliver
Leakage mechanism in AlxGa1−xN/GaN heterostructures with AlN interlayer
2022 Semiconductor science and technology, IOP Publ., volume: 37, issue: 2, page: 025016 - Langer, Julia, Cimalla, Volker, Lebedev, Vadim, Kirste, Lutz, Prescher, Mario, Luo, Tingpeng, Jeske, Jan, Ambacher, Oliver
Manipulation of the in situ nitrogen‐vacancy doping efficiency in CVD‐grown diamond
2022 Physica status solidi. A, Wiley-VCH, volume: 219, issue: 10, page: 2100756 - Döring, Philipp, Sinnwell, Matthias, Reiner, Richard, Driad, Rachid, Waltereit, Patrick, Leone, Stefano, Müller, Stefan, Mikulla, Michael, Ambacher, Oliver
On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors
2022 Journal of applied physics, American Inst. of Physics, volume: 131, issue: 11, page: 114502 - Götze, Arne, Striegler, Nico, Marshall, Alastair, Neumann, Philipp, Giese, Christian, Quellmalz, Patricia, Knittel, Peter
Preferential placement of aligned NV centers in CVD‐overgrown diamond microstructures
2022 Physica status solidi. Rapid research letters, Wiley, volume: 16, issue: 1, page: 2100373 - Feil, Niclas Manuel, Nair, Akash, Pashchenko, Vladimir, Kirste, Lutz, Ambacher, Oliver
Rayleigh waves in nonpolar Al0.7Sc0.3N(1120) films with enhanced electromechanical coupling and quality factor
2022 Applied physics letters, AIP Publishing, volume: 121, issue: 19, page: 191903
2021
- Heinz, Felix, Thome, Fabian, Leuther, Arnulf, Ambacher, Oliver
A 50-nm gate-length metamorphic HEMT technology optimized for cryogenic ultra-low-noise operation
2021 IEEE transactions on microwave theory and techniques, Institute of Electrical and Electronics Engineers (IEEE), volume: 69, issue: 8, page: 3896-3907 - Basler, Michael, Reiner, Richard, Moench, Stefan, Waltereit, Patrick, Quay, Rüdiger, Kallfass, Ingmar, Ambacher, Oliver
A GaN-based active diode circuit for low-loss rectification
2021 - Bürger, Jasmin-Clara, Gutsch, Sebastian, Thomann, Yi, Thomann, Ralf, Christian, Björn P., Ambacher, Oliver, Zacharias, Margit
Analysis of the growth of laterally aligned SnO2 nanowires by thermodynamic considerations and experiments
2021 Crystal growth & design, American Chemical Society, volume: 21, issue: 1, page: 191-199 - Wolff, Niklas, Fichtner, Simon, Haas, Benedikt, Islam, Md. Redwanul, Niekiel, Florian, Kessel, Maximilian, Ambacher, Oliver, Koch, Christoph, Wagner, Bernhard, Lofink, Fabian, Kienle, Lorenz
Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN
2021 Journal of applied physics, AIP Publishing, volume: 129, issue: 3, page: 034103 - Gashi, Bersant, John, Laurenz, Meier, Dominik, Rösch, Markus, Wagner, Sandrine, Tessmann, Axel, Leuther, Arnulf, Ambacher, Oliver, Quay, Rüdiger
Broadband 400-GHz InGaAs mHEMT transmitter and receiver S-MMICs
2021 IEEE transactions on terahertz science and technology, Institute of Electrical and Electronics Engineers (IEEE), volume: 11, issue: 6, page: 660-675 - Basler, Michael, Reiner, Richard, Moench, Stefan, Benkhelifa, Fouad, Döring, Philipp, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver
Building blocks for GaN power integration
2021 IEEE access, IEEE, volume: 9, page: 163122-163137 - Reiner, Richard, Benkhelifa, Fouad, Moench, Stefan, Basler, Michael, Waltereit, Patrick, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver
Design of low-resistance and area-efficient GaN-HEMTs for low voltage power applications
2021 - Urban, Daniel F., Ambacher, Oliver, Elsässer, Christian
First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N
2021 Physical review, B : covering condensed matter and materials physics, American Physical Society, volume: 103, issue: 11, page: 115204 - Döring, Philipp, Driad, Rachid, Leone, Stefano, Mueller, Stefan, Waltereit, Patrick, Kirste, Lutz, Polyakov, Vladimir, Mikulla, Michael, Ambacher, Oliver
Growth and fabrication of quasivertical current aperture vertical electron transistor structures
2021 Physica status solidi. A, Wiley, volume: 218, issue: 3, page: 2000379 - Basler, Michael, Moench, Stefan, Reiner, Richard, Benkhelifa, Fouad, Weidinger, Gerald, Weis, Gerald, Quay, Rüdiger, Kallfass, Ingmar, Ambacher, Oliver
High-power density DC-DC converters using highly-integrated half-bridge GaN ICs
2021 - Manz, Christian, Leone, Stefano, Kirste, Lutz, Ligl, Jana, Frei, Kathrin, Fuchs, Theodor, Prescher, Mario, Waltereit, Patrick, Verheijen, Marcel A., Graff, Andreas, Simon, Michel, Altmann, Frank, Fiederle, Michael, Ambacher, Oliver
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
2021 Semiconductor science and technology, IOP Publishing, volume: 36, issue: 3, page: 034003 - Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver, Kallfass, Ingmar
Investigation of GaN-on-Si and GaN-on-SOI substrate capacitances for discrete and monolithic half-bridges
2021 - Weis, Markus, Friesicke, Christian, Quay, Rüdiger, Ambacher, Oliver
Low-power differential input to single-ended output GaN RF-DAC for RF-signal generation
2021 IEEE transactions on microwave theory and techniques, Institute of Electrical and Electronics Engineers (IEEE), volume: 69, issue: 3, page: 1646-1653 - Döring, Philipp, Driad, Rachid, Reiner, Richard, Waltereit, Patrick, Mikulla, Michael, Ambacher, Oliver
Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability
2021 Electronics letters, Institution of Engineering and Technology (IET), volume: 57, issue: 3, page: 145-147 - Islam, Md. Redwanul, Wolff, Niklas, Yassine, Mohamed Fadi, Schönweger, Georg, Christian, Björn P., Kohlstedt, Hermann, Ambacher, Oliver, Lofink, Fabian, Kienle, Lorenz, Fichtner, Simon
On the exceptional temperature stability of ferroelectric Al1-xScxN thin films
2021 Applied physics letters, AIP Publishing, volume: 118, issue: 23, page: 232905 - Ambacher, Oliver, Christian, Björn P., Yassine, Mohamed Fadi, Baeumler, Martina, Leone, Stefano, Quay, Rüdiger
Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
2021 Journal of applied physics, AIP Publishing, volume: 129, issue: 20, page: 204501 - Feil, Niclas Manuel, Mayer, Elena, Nair, Akash, Christian, Björn P., Ding, Anli, Sun, Cheng, Mihalic, Saskia, Kessel, Maximilian, Zukauskaite, Agne, Ambacher, Oliver
Properties of higher-order surface acoustic wave modes in Al1−xScxN/sapphire structures
2021 Journal of applied physics, American Institute of Physics, volume: 130, issue: 16, page: 164501 - Langer, Julia, Cimalla, Volker, Prescher, Mario, Ligl, Jana, Tegetmeyer, Björn, Schreyvogel, Christoph, Ambacher, Oliver
Quality assessment of in situ plasma‐etched diamond surfaces for chemical vapor deposition overgrowth
2021 Physica status solidi. A, Applied research, Wiley, volume: 218, issue: 11, page: 2100035 - Döring, Philipp, Driad, Rachid, Reiner, Richard, Waltereit, Patrick, Leone, Stefano, Mikulla, Michael, Ambacher, Oliver
Technology of GaN-based large area CAVETs with co-integrated HEMTs
2021 IEEE transactions on electron devices, Institute of Electrical and Electronics Engineers (IEEE), volume: 68, issue: 11, page: 5547-5552 - Ambacher, Oliver, Christian, Björn P., Feil, Niclas Manuel, Urban, Daniel F., Elsässer, Christian, Prescher, Mario, Kirste, Lutz
Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties
2021 Journal of applied physics, AIP Publishing, volume: 130, issue: 4, page: 045102
2020
- Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Hückelheim, Jan, Meder, Dirk, Quay, Rüdiger, Ambacher, Oliver, Kallfass, Ingmar
A 600V GaN-on-Si Power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
2020 - Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Mueller, Stefan, Quay, Rüdiger, Ambacher, Oliver, Kallfass, Ingmar
A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors
2020 - Thome, Fabian, Ture, Erdin, Leuther, Arnulf, Schäfer, Frank K., Navarrini, Alessandro, Serres, Patrice, Ambacher, Oliver
A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers
2020 - Basler, Michael, Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Kallfass, Ingmar, Ambacher, Oliver
A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts
2020 - Weiss, Markus, Friesicke, Christian, Quay, Rüdiger, Ambacher, Oliver
A novel 32-gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation
2020 - Gashi, Bersant, John, Laurenz, Meier, Dominik, Rösch, Markus, Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
Broadband and High-Gain 400-GHz InGaAs mHEMT Medium-Power Amplifier S-MMIC
2020 - Rogall, Olga, Feil, Niclas Manuel, Ding, Anli, Mayer, Elena, Pupyrev, Pavel D., Lomonosov, Alexey M., Zukauskaite, Agne, Ambacher, Oliver, Mayer, Andreas P.
Determining elastic constants of AlScN films on silicon substrates by laser ultrasonics
2020 - Ding, Anli, Kirste, Lutz, Lu, Yuan, Driad, Rachid, Kurz, Nicolas, Lebedev, Vadim, Christoph, Tim, Feil, Niclas Manuel, Lozar, Roger, Metzger, Thomas, Ambacher, Oliver, Zukauskaite, Agne
Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N (112 ¯ 0) thin films
2020 Applied physics letters, American Inst. of Physics, volume: 116, issue: 10, page: 101903 - Leone, Stefano, Fornari, Roberto, Bosi, Matteo, Montedoro, Vincenzo, Kirste, Lutz, Döring, Philipp, Benkhelifa, Fouad, Prescher, Mario, Manz, Christian, Polyakov, Vladimir, Ambacher, Oliver
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
2020 Journal of crystal growth, Elsevier, volume: 534, page: 125511 - Kemmer, Tobias, Dammann, Michael, Baeumler, Martina, Polyakov, Vladimir, Brückner, Peter, Konstanzer, Helmer, Quay, Rüdiger, Ambacher, Oliver
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
2020 - Cwiklinski, Maciej, Brückner, Peter, Leone, Stefano, Krause, Sebastian, Friesicke, Christian, Massler, Hermann, Quay, Rüdiger, Ambacher, Oliver
First Demonstration of G-Band Broadband GaN Power Amplifier MMICs Operating Beyond 200 GHz
2020 - Urban, Daniel F., Ambacher, Oliver, Elsässer, Christian
First-principles calculation of electroacoustic properties of wurtzite (Al, Sc) N
2020 arXiv:2002.08143 - Sundarapandian, Balasubramanian, Kessel, Maximilian, Zukauskaite, Agne, Kirste, Lutz, Sun, Cheng, Ambacher, Oliver
In-plane oriented stacks of c-AlScN/Mo (110) for BAW resonators grown by magnetron sputter epitaxy
2020 - Reinke, Philipp, Benkhelifa, Fouad, Kirste, Lutz, Czap, Heiko, Pinti, Lukas, Zuerbig, Verena, Cimalla, Volker, Nebel, Christoph E., Ambacher, Oliver
Influence of different surface morphologies on the performance of high-voltage, low-resistance diamond Schottky Diodes
2020 IEEE transactions on electron devices, IEEE, volume: 67, issue: 6, page: 2471 - 2477 - Basler, Michael, Reiner, Richard, Moench, Stefan, Waltereit, Patrick, Quay, Rüdiger, Kallfass, Ingmar, Ambacher, Oliver
Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage
2020 IEEE electron device letters, IEEE, volume: 41, issue: 7, page: 993 - 996 - Thome, Fabian, Leuther, Arnulf, Ambacher, Oliver
Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology
2020 IEEE microwave and wireless components letters, IEEE, volume: 30, issue: 2, page: 197-200 - Ligl, Jana, Leone, Stefano, Manz, Christian, Kirste, Lutz, Döring, Philipp, Fuchs, Theodor, Prescher, Mario, Ambacher, Oliver
Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
2020 Journal of applied physics, American Inst. of Physics, volume: 127, issue: 19, page: 195704 - Leone, Stefano, Ligl, Jana, Manz, Christian, Kirste, Lutz, Fuchs, Theodor, Menner, Hanspeter, Prescher, Mario, Wiegert, Joachim, Zukauskaite, Agne, Quay, Rüdiger, Ambacher, Oliver
Metal‐lorganic chemical vapor deposition of aluminum scandium nitride
2020 physica status solidi. Rapid research letters, Wiley-WCH, volume: 14, issue: 1, page: 1900535 - Lebedev, Vadim, Yoshikawa, Taro, Schreyvogel, Christoph, Kirste, Lutz, Weippert, Jürgen, Kunzer, Michael, Graff, Andreas, Ambacher, Oliver
Microstructural and optical emission properties of diamond multiply twinned particles
2020 Journal of applied physics, American Inst. of Physics, volume: 127, issue: 2, page: 025303 - Moench, Stefan, Müller, Stefan G., Reiner, Richard, Waltereit, Patrick, Czap, Heiko, Basler, Michael, Hückelheim, Jan, Kirste, Lutz, Kallfass, Ingmar, Quay, Rüdiger, Ambacher, Oliver
Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer
2020 Physica status solidi. A, Wiley-VCH, volume: 218, issue: 3 (Special Issue: Compound Semiconductors), page: 2000404 - Basler, Michael, Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Kallfass, Ingmar, Ambacher, Oliver
Monolithic integration of inductive components in a GaN-on-Si technology
2020 - Heinz, Felix, Thome, Fabian, Leuther, Arnulf, Ambacher, Oliver
Noise Performance of Sub-100-nm Metamorphic HEMT Technologies
2020 - Lu, Yuan, Ding, Anli, Driad, Rachid, Feil, Niclas Manuel, Kirste, Lutz, Christoph, Tim, Ambacher, Oliver, Zukauskaite, Agne
Non-polar a-plane AlScN(1120) thin film based SAW resonators with significantly improved electromechanical coupling
2020 2020 IEEE International Ultrasonics Symposium (IUS), IEEE - Feil, Niclas Manuel, Mayer, Elena, Christian, Björn P., Ding, Anli, Zukauskaite, Agne, Ambacher, Oliver
Novel method for extracting material constants of epitaxial Wurtzite AlScN films on sapphire using higher order surface acoustic wave modes
2020 - Leone, Stefano, Brückner, Peter, Kirste, Lutz, Döring, Philipp, Fuchs, Theodor, Mueller, Stefan, Prescher, Mario, Quay, Rüdiger, Ambacher, Oliver
Optimization of metal‐organic chemical vapor deposition regrown n‐GaN
2020 Physica status solidi. B, Basic research, Wiley-VCH, volume: 257, issue: 3, page: 1900436 - Reiner, Richard, Gerrer, Thomas, Weiß, Beatrix, Waltereit, Patrick, Moench, Stefan, Meder, Dirk, Sinnwell, Matthias, Dammann, Michael, Quay, Rüdiger, Ambacher, Oliver
Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers
2020
2019
- Cwiklinski, Maciej, Brückner, Peter, Leone, Stefano, Friesicke, Christian, Lozar, Roger, Massler, Hermann, Quay, Rüdiger, Ambacher, Oliver
190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth
2019 IEEE, page: 1257 - 1260 - Basler, Michael, Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Kallfass, Ingmar, Ambacher, Oliver
A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
2019 - Basler, Michael, Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Kallfass, Ingmar, Ambacher, Oliver
A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses
2019 IEEE, page: 93 - 98 - Dyck, Alexander, Kuri, Michael, Rösch, Markus, Tessmann, Axel, Ambacher, Oliver
A dielectric-filled cavity-backed lens-coupled dipole antenna at 100 GHz
2019 IEEE Xplore digital library, IEEE - Amirpour, Raul, Schwantuschke, Dirk, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver
AlGaN/GaN High Electron-mobility Varactors on Silicon Substrate
2019 12th German Microwave Conference (GeMiC), page: 244 - 247 - Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Meder, Dirk, Basler, Michael, Quay, Rüdiger, Ambacher, Oliver, Kallfass, Ingmar
Asymmetrical Substrate-Biasing Effects at up to 350V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-Bridges
2019 IEEE, page: 28 - 35 - Cwiklinski, Maciej, Brückner, Peter, Leone, Stefano, Friesicke, Christian, Massler, Hermann, Lozar, Roger, Wagner, Sandrine, Quay, Rüdiger, Ambacher, Oliver
D-band and G-band high-performance GaN power amplifier MMICs
2019 IEEE transactions on microwave theory and techniques, Institute of Electrical and Electronics Engineers (IEEE), volume: 67, issue: 12, page: 5080-5089 - Roscher, Sarah, Hoffmann, René, Ambacher, Oliver
Determination of the graphene–graphite ratio of graphene powder by Raman 2D band symmetry analysis
2019 Analytical methods, RSC, volume: 11, issue: 9, page: 1224-1228 - Reiner, Richard, Zuebig, Verena, Pinti, Lukas, Reinke, Philipp, Meder, Dirk, Moench, Stefan, Benkhelifa, Fouad, Quay, Rüdiger, Cimalla, Volker, Nebel, Christoph E., Ambacher, Oliver
Diamond Schottky-diode in a non-isolated Buck converter
2019 - Leone, Stefano, Benkhelifa, Fouad, Kirste, Lutz, Manz, Christian, Quay, Rüdiger, Ambacher, Oliver
Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
2019 Journal of applied physics, AIP Publishing, volume: 125, page: 235701 - Ding, Anli, Kurz, Nicolas, Driad, Rachid, Lu, Yuan, Lozar, Roger, Christoph, Tim, Kirste, Lutz, Ambacher, Oliver, Zukauskaite, Agne
Experimental determination of Al1-xScxN thin film thermo-electro-acoustic properties up to 140°C by using SAW resonators
2019 IEEE International Ultrasonics Symposium (IUS), Kobe, Japan, page: 710 - 715 - Kurz, Nicolas, Ding, Anli, Urban, Daniel F., Lu, Yuan, Kirste, Lutz, Feil, Niclas Manuel, Zukauskaite, Agne, Ambacher, Oliver
Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators
2019 Journal of applied physics, AIP Publishing, volume: 126, page: 075106 - Feil, Niclas Manuel, Kurz, Nicolas, Urban, Daniel F., Altayara, Abdullah, Christian, Björn P., Ding, Anli, Zukauskaite, Agne, Ambacher, Oliver
Finite element analysis of SAW propagation characteristics in c-plane (0001) and a-plane (11-20) AlScN thin films
2019 - Lebedev, Vadim, Yoshikawa, Taro, Giese, Christian, Kirste, Lutz, Zukauskaite, Agne, Graff, Andreas, Meyer, Frank, Burmeister, Frank, Ambacher, Oliver
Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth
2019 Journal of applied physics, AIP Publishing, volume: 125, page: 075305 - Amado Rey, Ana Belen, Campos Roca, Yolanda, Friesicke, Christian, Wagner, Sandrine, Ambacher, Oliver
GCPW GaAs broadside couplers at H-band and application to balanced power amplifiers
2019 IEEE transactions on microwave theory and techniques, Institute of Electrical and Electronics Engineers (IEEE), volume: 67, issue: 1, page: 78-85 - Amirpour, Raul, Schwantuschke, Dirk, Ambacher, Oliver
High-Q anti-series AlGaN/GaN high electron-mobility varactor
2019 IEEE MTT-S International Microwave Symposium digest, NJ Institute of Electrical and Electronic Engineers - Ture, Erdin, Leone, Stefano, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver
High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
2019 IEEE MTT-S International Microwave Symposium digest, Institute of Electrical and Electronic Engineers - Heinz, Felix, Schwantuschke, Dirk, Leuther, Arnulf, Ambacher, Oliver
Highly Scalable Distributed High Electron Mobility Transistor Model
2019 IEEE, page: 1286 - 1288 - Yoshikawa, Taro, Herrling, David, Meyer, Frank, Burmeister, Frank, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis
2019 Journal of vacuum science & technology B, American Vacuum Society, volume: 37, issue: 2, page: 021207 - Weis, Markus, Friesicke, Christian, Quay, Rüdiger, Ambacher, Oliver
Integrated 2-b riemann pump RF-DAC in GaN technology for 5G base stations
2019 IEEE MTT-S International Microwave Symposium digest, Institute of Electrical and Electronic Engineers - Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver, Kallfass, Ingmar
Integrated Current Sensing in GaN Power ICs
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), page: 111 - 114 - Frei, Kathrin, Trejo-Hernández, Raúl, Schütt, Sebastian, Kirste, Lutz, Prescher, Mario, Aidam, Rolf, Müller, Stefan G., Waltereit, Patrick, Ambacher, Oliver, Fiederle, Michael
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
2019 Japanese journal of applied physics, Japan Society of Applied Physics, volume: 58, issue: SC, page: SC1045 - Aidam, Rolf, Ambacher, Oliver, Diwo, Elke, Godejohann, Birte-Julia, Kirste, Lutz, Lim, Taek, Quay, Rüdiger, Waltereit, Patrick
MBE of III-Nitride Semiconductors for Electronic Devices
2019, Molecular Beam Epitaxy: Materials and Device Applications, - Thome, Fabian, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver
Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
2019 IEEE MTT-S International Microwave Symposium digest, NJ Institute of Electrical and Electronic Engineers - Baeumler, Martina, Lu, Yuan, Kurz, Nicolas, Kirste, Lutz, Prescher, Mario, Christoph, Tim, Wagner, Joachim, Zukauskaite, Agne, Ambacher, Oliver
Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41
2019 Journal of applied physics, AIP Publishing, volume: 126, page: 045715 - Heinz, Felix, Schwantuschke, Dirk, Ohlrogge, Matthias, Leuther, Arnulf, Ambacher, Oliver
RF-Noise Model Extraction Procedure for Distributed Multiport Models
2019 12th German Microwave Conference (GeMiC), page: 260 - 263 - Thome, Fabian, Leuther, Arnulf, Heinz, Felix, Ambacher, Oliver
W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology
2019 IEEE MTT-S International Microwave Symposium (IMS), page: 168 - 171
2018
- Thome, Fabian, Leuther, Arnulf, Gallego, Juan Daniel, Schäfer, Frank K., Schlechtweg, Michael, Ambacher, Oliver
70-116-GHz LNAs in 35-nm and 50-nm Gate-Length Metamorphic HEMT Technologies for Cryogenic and Room-Temperature Operation
2018 IEEE MTT-S International Microwave Symposium Digest, issue: 6, page: 1495 - 1498 - Dyck, Alexander, Rösch, Markus, Tessmann, Axel, Leuther, Arnulf, Kuri, Michael, Masler, Hermann, Wagner, Sandrine, Meder, Dirk, Weismann-Thaden, Birgit, Schlechtweg, Michael, Ambacher, Oliver
A 300 GHz microstrip multilayered antenna on quartz substrate
2018 International Workshop on Antenna Technology (iWAT), page: 1 - 3 - Amado Rey, Ana Belen, Campos Roca, Yolanda, Friesicke, Christian, Raay, Friedbert van, Massler, Hermann, Leuther, Arnulf, Ambacher, Oliver
A G-band broadband balanced power amplifier module based on cascode mHEMTs
2018 IEEE microwave and wireless components letters, IEEE, volume: 28, issue: 10, page: 924-926 - Cwiklinski, Maciej, Friesicke, Christian, Raay, Friedbert van, Massler, Hermann, Quay, Rüdiger, Ambacher, Oliver
A Novel Type of Broadband Radial Stub
2018 2018 48th European Microwave Conference (EuMC), Madrid, page: 1093 - 1096 - Amado Rey, Ana Belen, Campos Roca, Yolanda, Raay, Friedbert van, Friesicke, Christian, Wagner, Sandrine, Massler, Hermann, Leuther, Arnulf, Ambacher, Oliver
Analysis and development of submillimeter-wave Stacked-FET power amplifier MMICs in 35-nm mHEMT technology
2018 IEEE transactions on terahertz science and technology, IEEE, volume: 8, issue: 3, page: 357-364 - Amado Rey, Ana Belen, Campos Roca, Yolanda, Friesicke, Christian, Raay, Friedbert van, Massler, Hermann, Leuther, Arnulf, Ambacher, Oliver
Analysis of 4-way divider MMICs in GaAs technology for H-band applications
2018 11th German Microwave Conference (GeMiC), page: 327 - 330 - Hahn, Lars, Fuchs, Frank, Kirste, Lutz, Driad, Rachid, Rutz, Frank, Passow, Thorsten, Köhler, Klaus, Rehm, Robert, Ambacher, Oliver
Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
2018 Applied physics letters, American Inst. of Physics, volume: 112, issue: 15, page: 151102 - Kurz, Nicolas, Parsapour, Fazel, Pashchenko, Vladimir, Kirste, Lutz, Lebedev, Vadim, Muralt, Paul, Ambacher, Oliver, Pascal, Nicolay
Determination of elastic and piezoelectric properties of Al0.84Sc0.16N thin films
2018 IEEE International Ultrasonics Symposium (IUS), Kobe, Japan, page: 1 - 5 - Amirpour, Raul, Krause, Sebastian, Quay, Rüdiger, Ambacher, Oliver
Dynamic Load Modulated Low-Voltage GaN PA Using Novel Low-Loss GaN Varactors
2018 48th European Microwave Conference (EuMC), Madrid, page: 5 - 8 - Lu, Yuan, Reusch, Markus, Kurz, Nicolas, Ding, Anli, Christoph, Tim, Prescher, Mario, Kirste, Lutz, Ambacher, Oliver, Zukauskaite, Agne
Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films
2018 APL materials, AIP Publ., volume: 6 - Cwiklinski, Maciej, Friesicke, Christian, Bruckner, Peter, Schwantuschke, Dirk, Wagner, Sandrine, Lozar, Roger, Massler, Hermann, Quay, Rüdiger, Ambacher, Oliver
Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
2018 IEEE transactions on microwave theory and techniques, Institute of Electrical and Electronics Engineers (IEEE), volume: 66, issue: 12, page: 5664-5675 - Knapp, Marius, Hoffmann, René, Lebedev, Vadim, Cimalla, Volker, Ambacher, Oliver
Graphene as an active virtually massless top electrode for RF solidly mounted bulk acoustic wave (SMR-BAW) resonators
2018 Nanotechnology, IOP Publ., volume: 29, page: 105302 - Derguti, Edon, Ture, Erdin, Krause, Sebastian, Schwantuschke, Dirk, Quay, Rüdiger, Ambacher, Oliver
High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies
2018 2018 48th European Microwave Conference (EuMC), Madrid, page: 1233 - 1236 - Moench, Stefan, Weiß, Beatrix, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver, Kallfass, Ingmar
Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges
2018 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, GA, page: 242 - 246 - Ding, Anli, Reusch, Markus, Lu, Yuan, Kurz, Nicolas, Lozar, Roger, Christoph, Tim, Driad, Rachid, Ambacher, Oliver, Zukauskaite, Agne
Investigation of Temperature Characteristics and Substrate Influence on AlScN-Based SAW Resonators
2018 IEEE, page: 1 - 9 - Gashi, Bersant, Krause, Sebastian, Quay, Rüdiger, Fager, Christian, Ambacher, Oliver
Investigations of active antenna doherty power amplifier modules under beam-steering mismatch
2018 IEEE microwave and wireless components letters, IEEE, volume: 28, issue: 10, page: 930-932 - Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Moench, Stefan, Wespel, Matthias, Müller, Stefan G., Quay, Rüdiger, Ambacher, Oliver
Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
2018 IET Power electronics, IET, volume: 11, issue: 4, page: 681-688 - Reiner, Richard, Waltereit, Patrick, Moench, Stefan, Dammann, Michael, Weiß, Beatrix, Quay, Rüdiger, Ambacher, Oliver
Multi-Stage Cascode in High-Voltage AlGaN/GaN-on-Si Technology
2018 Multi-Stage Cascode in High-Voltage AlGaN/GaN, page: 237 - 241 - Reiner, Richard, Weiß, Beatrix, Meder, Dirk, Waltereit, Patrick, Gerrer, Thomas, Quay, Rüdiger, Vockenberger, Christian, Ambacher, Oliver
PCB-embedding for GaN-on-Si power devices and ICs
2018 - Heinz, Felix, Schwantuschke, Dirk, Leuther, Arnulf, Tessmann, Axel, Ohlrogge, Matthias, Quay, Rüdiger, Ambacher, Oliver
RF-Noise Modeling of InGaAs Metamorphic HEMTs and MOSFETs
2018 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, page: 150 - 153 - Weis, Markus, Friesicke, Christian, Quay, Rüdiger, Ambacher, Oliver
Riemann-Pump based RF-Power DACs in GaN Technology for 5G Base Stations
2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G), Dublin, page: 1 - 3 - Amado Rey, Ana Belen, Tessmann, Axel, Campos Roca, Yolanda, Massler, Hermann, Leuther, Arnulf, Ambacher, Oliver
Spurious Mode Suppression in the Design of GCPW Submillimeter-wave Power Amplifiers
2018 48th European Microwave Conference (EuMC), Madrid, page: 851 - 854 - Raay, Friedbert van, Schwantuschke, Dirk, Leuther, Arnulf, Brückner, Peter, Peschel, Detlef, Quay, Rüdiger, Schlechtweg, Michael, Ambacher, Oliver
State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs
2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, page: 1 - 225 - Reusch, Markus, Holc, Katarzyna, Lebedev, Vadim, Kurz, Nicolas, Zukauskaite, Agne, Ambacher, Oliver
Temperature cross-sensitivity of AlN-based flexural plate wave sensors
2018 IEEE sensors journal, IEEE, volume: 18, issue: 19, page: 7810-7818 - Kurz, Nicolas, Lu, Yuan, Kirste, Lutz, Reusch, Markus, Zukauskaite, Agne, Lebedev, Vadim, Ambacher, Oliver
Temperature dependence of the pyroelectric coefficient of AlScN thin films
2018 Physica status solidi, Wiley-VCH, volume: 215, issue: 13, page: 1700831 - Moench, Stefan, Reiner, Richard, Weiß, Beatrix, Waltereit, Patrick, Quay, Rüdiger, Kaden, Thomas A., Ambacher, Oliver, Kallfass, Ingmar
Towards highly-integrated high-voltage multi-MHz GaN-on-Si power ICs and modules
2018 - Gerrer, Thomas, Cimalla, Volker, Waltereit, Patrick, Müller, Stefan G., Benkhelifa, Fouad, Maier, Thomas, Czap, Heiko, Ambacher, Oliver, Quay, Rüdiger
Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
2018 International journal of microwave and wireless technologies, Cambridge Univ. Press, volume: 10, issue: 5-6, page: 666-673 - Kemmer, Tobias, Dammann, Michael, Baeumler, Martina, Brückner, Peter, Konstanzer, Helmer, Quay, Rüdiger, Ambacher, Oliver
Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors
2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA, page: 1 - 6 - Thome, Fabian, Ture, Erdin, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver
W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
2018 11th German Microwave Conference (GeMiC), page: 331 - 334
2017
- Thome, Fabian, Ambacher, Oliver
A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
2017 IEEE MTT-S International Microwave Symposium (IMS), page: 1695 - 1698 - Godejohann, Birte-Julia, Ture, Erdin, Müller, Stefan G., Prescher, Mario, Kirste, Lutz, Aidam, Rolf, Polyakov, Vladimir, Brückner, Peter, Breuer, Steffen, Köhler, Klaus, Quay, Rüdiger, Ambacher, Oliver
AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
2017 Physica status solidi, Wiley-VCH, volume: 8 - Stehle, Jochen, Samarao, Ashwin K., Krishnamoorthy, Uma, Ambacher, Oliver
Atomic layer deposited P-type nickel oxide and cobalt oxide for ethanol gas sensing
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Kaohsiung, page: 1504 - 1507 - Thome, Fabian, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
Broadband high-power W-Band amplifier MMICs based on Stacked-HEMT unit cells
2017 IEEE transactions on microwave theory and techniques : MTT, IEEE, volume: 66, issue: 3, page: 1312-1318 - Thome, Fabian, Leuther, Arnulf, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
2017 IEEE MTT-S International Microwave Symposium (IMS), page: 752 - 755 - Ture, Erdin, Mußer, Markus, Hülsmann, Axel, Quay, Rüdiger, Ambacher, Oliver
Demonstration of an RF front-end based on GaN HEMT technology
2017 Sensors, and Command, Control, Communications, and Intelligence, volume: 10184 - Weiss, Markus, Friesicke, Christian, Metzger, Thomas, Schmidhammer, Edgar, Quay, Rüdiger, Ambacher, Oliver
Design, realization, and evaluation of a Riemann pump in GaN technology
2017 IEEE microwave and wireless components letters, Inst., volume: 27, issue: 7, page: 672-674 - Stehle, Jochen, Samarao, Ashwin K., Yama, Gary, Krishnamoorthy, Uma, Ambacher, Oliver
Development of a silicon-only capacitive dew point sensor
2017 IEEE sensors journal, IEEE, volume: 17, issue: 22, page: 7223-7230 - Moench, Stefan, Reiner, Richard, Weiß, Beatrix, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver, Kallfass, Ingmar
Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
2017 - Ture, Erdin, Brückner, Peter, Alsharef, Mohamed, Granzner, Ralf, Schwierz, Frank, Quay, Rüdiger, Ambacher, Oliver
First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
2017 IEEE MTT-S International Microwave Symposium (IMS), page: 35 - 37 - Reusch, Markus, Hole, Katarzyna, Zukauskaite, Agne, Lebedev, Vadim, Kurz, Nicolas, Ambacher, Oliver
Flexural plate wave sensors with buried IDT for sensing in liquids
2017 IEEE Sens J, page: 1 - 3 - Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Quay, Rüdiger, Ambacher, Oliver
Investigation of GaN-HEMTs in reverse conduction
2017 - Reusch, Markus, Cherneva, Sabina, Lu, Yuan, Zukauskaite, Agne, Kirste, Lutz, Holc, Katarzyna, Datcheva, Maria, Stoychev, Dimitar, Lebedev, Vadim, Ambacher, Oliver
Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices
2017 Applied surface science, Elsevier, volume: 407, page: 307-314 - Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Mönch, Stefan, Quay, Rüdiger, Ambacher, Oliver
Monolithically integrated GaN-on-Si power circuits
2017 - Lebedev, Vadim, Lisec, T., Yoshikawa, Taro, Reusch, Markus, Iankov, Dimitre, Giese, Christian, Zukauskaite, Agne, Cimalla, Volker, Ambacher, Oliver
Nanodiamond resonators fabricated on 8″ Si substrates using adhesive wafer bonding
2017 Journal of micromechanics and microengineering, Inst., volume: 27 - Müller, Angelina, Wapler, Matthias C., Vaity, P., Reisacher, Markus, Ambacher, Oliver, Okujeni, Samora, Egert, Ulrich, Bartos, Marlene, Diester, Ilka, Wallrabe, Ulrike
Non-diffracting light beams for optogenetics
2017 - Weiß, Beatrix, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver
Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
2017 5th Workshop on Wide Bandgap Power Devices and Applications, page: 398 - 403 - Jauss, Simon A., Hallaceli, Kazim, Mansfeld, Sebastian, Schwaiger, Stephan, Daves, Walter, Ambacher, Oliver
Reliability analysis of LPCVD SiN gate dielectric for AlGaN/GaN MIS-HEMTs
2017 IEEE transactions on electron devices, IEEE, volume: 64, issue: 5, page: 2298-2305 - Weiß, Beatrix, Reiner, Richard, Polyakov, Vladimir, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver, Maksimovic, Dragan
Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip
2017 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), page: 265 - 272 - Müller, Angelina, Wapler, Matthias C., Reisacher, Markus, Ambacher, Oliver, Wallrabe, Ulrike
Tiefenkontrollierbare Bessel-Strahlen für quasi-nichtinvasive optogenetische Stimulation
2017 - Bleh, Daniela, Rösch, Markus, Kuri, Michael, Dyck, Alexander, Tessmann, Axel, Leuther, Arnulf, Wagner, Sandrine, Weismann-Thaden, Birgit, Stulz, Hans-Peter, Zink, Martin, Riessle, Markus, Sommer, Rainer, Wilcke, J., Schlechtweg, Michael, Yang, Bin, Ambacher, Oliver
W-band time-domain multiplexing FMCW MIMO radar for far-field 3-D imaging
2017 IEEE transactions on terahertz science and technology, IEEE, volume: 65, issue: 9, page: 3474-3484 - Knapp, Marius, Hoffmann, René, Cimalla, Volker, Ambacher, Oliver
Wettability investigations and wet transfer enhancement of large-area CVD-Graphene on aluminum nitride
2017 , volume: 7, issue: 8, page: 226
2016
- Bleh, Daniela, Rösch, Markus, Kuri, Michael, Dyck, Alexander, Tessmann, Axel, Leuther, Arnulf, Wagner, Sandrine, Ambacher, Oliver
A 100 GHz FMCW MIMO radar system for 3D image reconstruction
2016 European Radar Conference (EuRAD), page: 37 - 40 - Amado Rey, Ana Belen, Campos Roca, Yolanda, Friesicke, Christian, Tessmann, Axel, Lozar, Roger, Wagner, Sandrine, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
A 280 GHz stacked-FET power amplifier cell using 50 nm metamorphic HEMT technology
2016 11th European Microwave Integrated Circuits Conference (EuMIC), page: 189 - 192 - Friesicke, Christian, Feuerschütz, Philip, Quay, Rüdiger, Ambacher, Oliver, Jacob, Arne F.
A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-band
2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, page: 1 - 4 - Maier, Florian, Krauße, Daniel, Gruner, Daniel, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver
A GaN-Based 10.1MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), page: 1 - 4 - Thome, Fabian, Ambacher, Oliver
A W-band wireless communication transmitter utilizing a stacked-FET oscillator for high output power performance
2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, page: 1 - 4 - Amado Rey, Ana Belen, Campos Roca, Yolanda, Friesicke, Christian, Tessmann, Axel, Massler, Hermann, Wagner, Sandrine, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
A broadband 175–245 GHz balanced medium power amplifier using 50-nm mHEMT technology
2016 Microwave Conference (APMC), Asia-Pacific, page: 1 - 4 - Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Wagner, Sandrine, Thome, Fabian, Schlechtweg, Michael, Ambacher, Oliver
A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality
2016 IEEE MTT-S International Microwave Symposium (IMS), issue: 3, page: 1 - 3 - Klenner, Mathias, Zech, Christian, Hülsmann, Axel, Kühn, Jutta, Schlechtweg, Michael, Hahmann, Konstantin, Kleiner, Bernhard, Ulrich, Michael, Ambacher, Oliver
A portable W-band radar system for enhancement of infrared vision in fire fighting operations
2016 SPIE digital library - Schlechtweg, Michael, Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Moschetti, Giuseppe, Rösch, Markus, Weber, Rainer, Hurm, Volker, Kuri, Michael, Zink, Martin, Riessle, Markus, Rosenzweig, Josef, Ambacher, Oliver
Advanced building blocks for (Sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, page: 1 - 4 - Thome, Fabian, Ohlrogge, Matthias, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
An investigation of millimeter wave switches based on shunt transistors including SPDT SWITCH MMICs up to 300 GHz
2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, page: 1 - 4 - Weiß, Beatrix, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver
Analysis and modeling of GaN-based multi field plate Schottky power diodes
2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), page: 1 - 6 - Reusch, Markus, Holc, Katarzyna, Pletschen, Wilfried, Kirste, Lutz, Zukauskaite, Agne, Yoshikawa, Taro, Iankov, Dimitre, Ambacher, Oliver, Lebedev, Vadim
Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices
2016 Journal of vacuum science & technology, American Institute of Physics, volume: 34, issue: 5, page: 052001 - Müller, Angelina, Wapler, Matthias C., Reisacher, Markus, Holc, Katarzyna, Ambacher, Oliver, Wallrabe, Ulrike
Bessel beams for depth-controlled quasi-noninvasive optogenetic stimulation
2016 - Schwantuschke, Dirk, Godejohann, Birte-Julia, Breuer, Steffen, Brückner, Peter, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver
Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Rösch, Markus, Tessmann, Axel, Leuther, Arnulf, Kuri, Michael, Wagner, Sandrine, Ambacher, Oliver, Gulan, Heiko
Compact W-band receiver module on hybrid liquid crystal polymer board
2016 46th European Microwave Conference (EuMC), page: 1517 - 1520 - Ohlrogge, Matthias, Tessmann, Axel, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
Complex interaction of passive multiport structures and their description by separate discrete models
2016 Electronics letters, IET, volume: 52, issue: 1, page: 52-54 - Raay, Friedbert van, Quay, Rüdiger, Schwantuschke, Dirk, Ohlrogge, Matthias, Peschel, Detlef, Schlechtweg, Michael, Ambacher, Oliver
Dual-gate HEMT parameter extraction based on 2.5D multiport simulation of passive structures
2016 11th European Microwave Integrated Circuits Conference (EuMIC), page: 241 - 244 - Yoshikawa, Taro, Reusch, Markus, Zuerbig, Verena, Cimalla, Volker, Lee, Kee-Han, Kurzyp, Magdalena, Arnault, Jean-Charles, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Electrostatic self-assembly of diamond nanoparticles onto Al- and N-polar sputtered aluminum nitride surfaces
2016 Nanomaterials, MDPI, volume: 6, issue: 11, page: 217 - Yoshikawa, Taro, Reusch, Markus, Holc, Katarzyna, Iankov, Dimitre, Zuerbig, Verena, Zukauskaite, Agne, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Enhanced actuation of nanocrystalline diamond microelectromechanical disk resonators with AlN layers
2016 Applied physics letters, AIP Publishing, volume: 108, issue: 17, page: 171903 - Ture, Erdin, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver, Alsharef, Mohamed, Granzner, Ralf, Schwierz, Frank
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
2016 11th European Microwave Integrated Circuits Conference (EuMIC), page: 61 - 64 - Schwantuschke, Dirk, Henneberger, Ralf, Wagner, Sandrine, Tessmann, Axel, Kallfass, Ingmar, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver
GaN-based E-band power amplifier modules
2016 46th European Microwave Conference (EuMC) - Zibold, Andreas, Reiner, Richard, Weis, Beatrix, Kunzer, Michael, Quay, Rüdiger, Wagner, Joachim, Waltereit, Patrick, Ambacher, Oliver
High voltage GaN-based Schottky diodes in non-isolated LED buck converters
2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), page: 1 - 9 - Ture, Erdin, Brückner, Peter, Godejohann, Birte-Julia, Aidam, Rolf, Alsharef, Mohamed, Granzner, Ralf, Schwierz, Frank, Quay, Rüdiger, Ambacher, Oliver
High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
2016 IEEE journal of the Electron Devices Society, IEEE, volume: 4, issue: 1, page: 1-6 - Thome, Fabian, Ambacher, Oliver
Highly isolating and broadband single-pole double-throw switches for millimeter-wave applications up to 330 GHz
2016 IEEE transactions on microwave theory and techniques : MTT, IEEE, volume: 66, issue: 4, page: 1998-2009 - Himmerlich, Marcel, Eisenhardt, A., Berthold, Theresa, Wang, Chunyu, Cimalla, Volker, Ambacher, Oliver, Krischok, Stefan
Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and water
2016 Physica status solidi. A, Wiley-VCH, volume: 213, issue: 3, page: 831-838 - Carrubba, Vincenzo, Maroldt, Stephan, Ture, Erdin, Udeh, U., Mußer, Markus, Bronner, Wolfgang, Quay, Rüdiger, Ambacher, Oliver
Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
2016 11th European Microwave Integrated Circuits Conference (EuMIC), page: 233 - 236 - Zibold, Andreas, Kunzer, Michael, Reiner, Richard, Weiss, Beatrix, Waltereit, Patrick, Quay, Rüdiger, Wagner, Joachim, Ambacher, Oliver
LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers
2016 - Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Wespel, Matthias, Meder, Dirk, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver
Linear temperature sensors in high-voltage GaN-HEMT power devices
2016 Applied Power Electronics Conference and Exposition (APEC), page: 2083 - 2086 - Rösch, Markus, Tessmann, Axel, Leuther, Arnulf, Weber, Rainer, Moschetti, Giuseppe, Aja Abelan, Beatriz, Kotiranta, Mikko, Massler, Hermann, Kangas, Ville, Genevieve-Perichaud, Marie, Schlechtweg, Michael, Ambacher, Oliver
Low noise amplifiers for MetOp-SG
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, page: 1 - 4 - Klenner, Mathias, Zech, Christian, Hülsmann, Axel, Kühn, Jutta, Schlechtweg, Michael, Ambacher, Oliver
Material characterization using a compact W-band ellipsometer
2016 46th European Microwave Conference (EuMC), page: 803 - 806 - Zech, Christian, Baumann, Benjamin, Hülsmann, Axel, Kühn, Jutta, Schlechtweg, Michael, Ambacher, Oliver
Measurement setup for the analysis of broadband frequency-modulated signals
2016 46th European Microwave Conference (EuMC), page: 389 - 392 - Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Wespel, Matthias, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver
Monolithic gan-on-si half-bridge circuit with integrated freewheeling diodes
2016 PCIM Europe; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, page: 1 - 7 - Reiner, Richard, Waltereit, Patrick, Weiss, Beatrix, Mönch, Stefan, Wespel, Matthias, Müller, Stefan G., Quay, Rüdiger, Ambacher, Oliver
Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
2016 - Friesicke, Christian, Maier, Thomas, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver
Packaged AlGaN/GaN HEMT power bars with 900 W output power and high PAE at L-band
2016 46th European Microwave Conference (EuMC), page: 409 - 412 - Alsharef, Mohamed, Granzner, Ralf, Schwierz, Frank, Ture, Erdin, Quay, Rüdiger, Ambacher, Oliver
Performance of tri-gate AlGaN/GaN HEMTs
2016 46th European Solid-State Device Research Conference (ESSDERC), page: 176 - 179 - Christian, Björn P., Volk, Janos, Lukàcs, István Endre, Sautieff, Elise, Sturm, Chris, Graillot, Alain, Dauksevicius, Rolanas, O’Reilly, Eoin P., Ambacher, Oliver, Lebedev, Vadim
Piezo-force and vibration analysis of ZnO nanowire arrays for sensor application
2016 Procedia engineering, Elsevier, volume: 168, page: 1192-1195 - Reusch, Markus, Holc, Katarzyna, Kirste, Lutz, Katus, Philip, Reindl, Leonhard Michael, Ambacher, Oliver, Lebedev, Vadim
Piezoelectric AlN films for FPW sensors with improved device performance
2016 Procedia engineering, Elsevier, volume: 168, page: 1040-1043 - Yoshikawa, Taro, Gao, Fang, Zuerbig, Verena, Giese, Christian, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Pinhole-free ultra-thin nanocrystalline diamond film growth via electrostatic self-assembly seeding with increased salt concentration of nanodiamond colloids
2016 Diamond and related materials, Elsevier Science, volume: 63, page: 103-107 - Jauss, Simon A., Schwaiger, Stephan, Daves, Walter, Ambacher, Oliver
Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications
2016 28th International Power Semiconductor Devices and ICs (ISPSD), page: 83 - 86 - Jauss, Simon A., Kilian, Stefan, Schwaiger, Stephan, Noll, Stefan, Daves, Walter, Ambacher, Oliver
Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
2016 Solid state electronics, Pergamon, Elsevier Science, volume: 125, page: 125-132 - Thome, Fabian, Maroldt, Stephan, Ambacher, Oliver
Prospects and limitations of stacked-FET approaches for enhanced output power in voltage-controlled oscillators
2016 IEEE transactions on microwave theory and techniques, IEEE, volume: 64, issue: 3, page: 836 - 846 - Müller, Angelina, Wapler, Matthias C., Schwarz, Ulrich T., Reisacher, Markus, Holc, Katarzyna, Ambacher, Oliver, Wallrabe, Ulrike
Quasi-Bessel beams from asymmetric and astigmatic illumination sources
2016 Optics express, The Optical Society, volume: 24, issue: 15, page: 17433-17452 - Alsharef, Mohamed, Christiansen, Max, Granzner, Ralf, Ture, Erdin, Quay, Rüdiger, Ambacher, Oliver, Schwierz, Frank
RF performance of trigate GaN HEMTs
2016 IEEE transactions on electron devices, IEEE, volume: 63, issue: 11, page: 4255-4261 - Moench, Stefan, Kallfass, Ingmar, Reiner, Richard, Weiß, Beatrix, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver
Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), page: 204 - 209 - Endruschat, Achim, Heckel, Thomas, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver, März, Martin, Eckardt, Bernd, Frey, Lothar
Slew rate control of a 600 V 55 mΩ GaN cascode
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), page: 334 - 339 - Ohlrogge, Matthias, Tessmann, Axel, Leuther, Arnulf, Weber, Rainer, Massler, Hermann, Seelmann-Eggebert, Matthias, Schlechtweg, Michael, Ambacher, Oliver
Small signal modelling approach for submillimeter wave III–V HEMTs with analysation and optimization possibilities
2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, page: 1 - 4 - Weiß, Beatrix, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver, Sepahvand, Alihosein, Maksimovic, Dragan
Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), page: 215 - 219 - Klenner, Mathias, Zech, Christian, Hülsmann, Axel, Kühn, Jutta, Schlechtweg, Michael, Ambacher, Oliver
Spectroscopic measurement of material properties using an improved millimeter-wave ellipsometer based on metallic substrates
2016 IEEE transactions on instrumentation and measurement, IEEE, volume: 65, issue: 11, page: 2551-2559 - Moschetti, Giuseppe, Thome, Fabian, Ohlrogge, Matthias, Goliasch, Jens, Schäfer, Frank K., Aja Abelan, Beatriz, Leuther, Arnulf, Schlechtweg, Michael, Seelmann-Eggebert, Matthias, Ambacher, Oliver, Wieching, Gundolf, Kotiranta, Mikko
Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature
2016 IEEE transactions on microwave theory and techniques, IEEE, volume: 64, issue: 10, page: 3139-3150 - Stehle, Jochen, Ambacher, Oliver, Samarao, Ashwin K., Yama, Gary, Krishnamoorthy, Uma
Study of a silicon parallel plate capacitor as a dew point sensor
2016 Ieee Sens J, page: 1 - 3 - Rombach, Julius, Papadogianni, Alexandra, Mischo, Markus, Cimalla, Volker, Kirste, Lutz, Ambacher, Oliver, Berthold, Theresa, Krischok, Stefan, Himmerlich, Marcel, Selve, Sören, Bierwagen, Oliver
The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films
2016 Sensors and actuators. B, Elsevier Science, volume: 236, page: 909-916 - Wespel, Matthias, Polyakov, Vladimir, Dammann, Michael, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
2016 IEEE T Electron Dev, volume: 63,2, page: 598 - 605
2015
- Moschetti, Giuseppe, Leuther, Arnulf, Massler, Hermann, Aja Abelan, Beatriz, Rösch, Markus, Schlechtweg, Michael, Ambacher, Oliver, Kangas, Ville, Genevieve-Perichaud, Marie
A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure
2015 IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 25, issue: 9, page: 618-620 - Amado Rey, Ana Belen, Campos Roca, Yolanda, Maroldt, Stephan, Tessmann, Axel, Massler, Hermann, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
A 200 GHz driver amplifier in metamorphic HEMT technology
2015 2015 Asia-Pacific Microwave Conference (APMC), volume: 2, page: 1 - 3 - Zech, Christian, Hülsmann, Axel, Schlechtweg, Michael, Reinold, Steffen, Giers, Christof, Kleiner, Bernhard, Georgi, Leopold, Kahle, Ruben, Becker, Karl-Friedrich, Ambacher, Oliver
A compact W-band LFMCW radar module with high accuracy and integrated signal processing
2015 European Microwave Conference (EuMC), page: 554 - 557 - Carrubba, Vincenzo, Ture, Erdin, Maroldt, Stephan, Muser, Marco, Raay, Friedbert van, Quay, Rüdiger, Ambacher, Oliver
A dual-band UMTS/LTE highly power-efficient class-ABJ Doherty GaN PA
2015 - Maier, Florian, Grede, Andre, Gruner, Daniel, Quay, Rüdiger, Waltereit, Patrick, Ambacher, Oliver
A novel broadband high-power Source-Pull/ Load-Pull concept for the HF- to UHF-range
2015 European Microwave Conference (EuMC), page: 1279 - 1282 - Köhler, Klaus, Pletschen, Wilfried, Godejohann, Birte-Julia, Müller, Stefan G., Menner, H., Ambacher, Oliver
Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance
2015 Journal of Applied Physics, AIP Publishing, volume: 118, issue: 20, page: 205702 - Reusch, Markus, Katus, Philip, Holc, Katarzyna, Pletschen, Wilfried, Kirste, Lutz, Zuerbig, Verena, Iankov, Dimitre, Reindl, Leonhard Michael, Ambacher, Oliver, Lebedev, Vadim
Aluminium nitride membranes with embedded buried idt electrodes for novel flexural plate wave devices
2015 - Dennler, Philippe, Ambacher, Oliver
Analysis of the Potential of Gallium Nitride Based Monolithic Power Ampliers in the Microwave Domain with more than an Octave Bandwidth
2015, , - Yoshikawa, Taro, Zuerbig, Verena, Gao, Fang, Hoffmann, René, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Appropriate Salt Concentration of Nanodiamond Colloids for Electrostatic Self-Assembly Seeding of Monosized Individual Diamond Nanoparticles on Silicon Dioxide Surfaces
2015 Langmuir, American Chemical Society (ACS), volume: 31, issue: 19, page: 5319-5325 - Granzner, Ralf, Polyakov, Vladimir, Cimalla, Volker, Ambacher, Oliver, Schwierz, Frank
Bias-free lateral terahertz emitters—A simulation study
2015 Journal of Applied Physics, AIP Publishing, volume: 118, issue: 4, page: 043102 - Raay, Friedbert van, Quay, Rüdiger, Aja Abelan, Beatriz, Moschetti, Giuseppe, Seelmann-Eggebert, Matthias, Schlechtweg, Michael, Ambacher, Oliver
Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit
2015 10th European Microwave Integrated Circuits Conference (EuMIC), page: 156 - 159 - Lopez-Diaz, Daniel, Ambacher, Oliver
Broadband transceiver circuits for millimeter-wave wireless communication
2015, , - Klenner, Mathias, Zech, Christian, Hülsmann, Axel, Schlechtweg, Michael, Ambacher, Oliver
Characterization of quasi-optical focusing systems at W-band frequencies
2015 European Microwave Conference (EuMC), page: 311 - 314 - Hahn, Herwig, Reuters, Benjamin, Geipel, Sascha, Schauerte, Meike, Benkhelifa, Fouad, Ambacher, Oliver, Kalisch, Holger, Vescan, Andrei
Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
2015 Journal of Applied Physics, AIP Publishing, volume: 117, issue: 10, page: 104508 - Jauss, Simon A., Schwaiger, Stephan, Daves, Walter, Noll, Stefan, Ambacher, Oliver
Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress
2015 45th European Solid State Device Research Conference (ESSDERC), page: 56 - 59 - Espinosa, Nayeli, Schwarz, Stefan U., Cimalla, Volker, Ambacher, Oliver
Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors
2015 Sensors and Actuators B: Chemical, Elsevier BV, volume: 210, page: 633-639 - Zhao, Man, Guo, Xiang-Yun, Ambacher, Oliver, Nebel, Christoph E., Hoffmann, René
Electrochemical generation of hydrogenated graphene flakes
2015 Carbon, Elsevier BV, volume: 83, page: 128-135 - Carrubba, Vincenzo, Maroldt, Stephan, Mußer, Markus, Ture, Erdin, Dammann, Michael, Raay, Friedbert van, Quay, Rüdiger, Brückner, Peter, Ambacher, Oliver
High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier
2015 IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 25, issue: 8, page: 526-528 - Ture, Erdin, Schwantuschke, Dirk, Tessmann, Axel, Wagner, Sandrine, Brückner, Peter, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver
High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), page: 1 - 4 - Chéron, Jérôme G., Campovecchio, Michel, Quéré, Raymond, Schwantuschke, Dirk, Quay, Rüdiger, Ambacher, Oliver
High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
2015 10th European Microwave Integrated Circuits Conference (EuMIC), page: 262 - 264 - Wespel, Matthias, Dammann, Michael, Polyakov, Vladimir, Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
2015 - Amado Rey, Ana Belen, Campos Roca, Yolanda, Weber, Rainer, Maroldt, Stephan, Tessmann, Axel, Massler, Hermann, Wagner, Sandrine, Leuther, Arnulf, Ambacher, Oliver
Impact of metallization layer structure on the performance of G-Band branch-line couplers
2015 IEEE microwave and wireless components letters, IEEE, volume: 25, issue: 12, page: 793-795 - Espinosa, Nayeli, Schwarz, Stefan U., Cimalla, Volker, Podolska, Anna, Ambacher, Oliver
Impedance Characterization of DNA-functionalization Layers on AlGaN/GaN High Electron Mobility Transistors
2015 Procedia Engineering, Elsevier BV, volume: 120, page: 912-915 - Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Wespel, Matthias, Quay, Rüdiger, Schlechtweg, Michael, Mikulla, Michael, Ambacher, Oliver
Integrated reverse-diodes for GaN-HEMT structures
2015 - Klenner, Mathias, Abels, T., Zech, Christian, Hülsmann, Axel, Schlechtweg, Michael, Ambacher, Oliver
Investigation of dielectric properties of multilayer structures consisting of homogeneous plastics and liquid solutions at 75–110 GHz
2015 Journal of sensors and sensor systems, Copernicus, volume: 4, issue: 1, page: 125-131 - Wallauer, Jan, Grumber, Christian, Polyakov, Vladimir, Iannucci, Robert, Cimalla, Volker, Ambacher, Oliver, Walther, Markus
Large area InN terahertz emitters based on the lateral photo-Dember effect
2015 Applied Physics Letters, AIP Publishing, volume: 107, issue: 11, page: 111102 - Moench, Stefan, Costa, Marco, Barner, Alexander, Kallfass, Ingmar, Reiner, Richard, Weiß, Beatrix, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver
Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), page: 92 - 97 - Dennler, Philippe, Maroldt, Stephan, Quay, Rüdiger, Ambacher, Oliver
Monolithic three-stage 6–18GHz high power amplifier with distributed interstage in GaN technology
2015 10th European Microwave Integrated Circuits Conference (EuMIC), page: 29 - 32 - Weiß, Beatrix, Reiner, Richard, Waltereit, Patrick, Müller, Stefan G., Wespel, Matthias, Quay, Rüdiger, Ambacher, Oliver
Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), page: 1 - 4 - Benkhelifa, Fouad, Müller, Stefan G., Polyakov, Vladimir, Ambacher, Oliver
Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs With a Thick Undoped GaN Gate Layer
2015 IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 36, issue: 9, page: 905-907 - Thome, Fabian, Maroldt, Stephan, Ambacher, Oliver
Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers
2015 - Seelmann-Eggebert, Matthias, Ohlrogge, Matthias, Weber, Rainer, Peschel, Detlef, Massler, Hermann, Riessle, Markus, Tessmann, Axel, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
On the accurate measurement and calibration of s-parameters for millimeter wavelengths and beyond
2015 IEEE transactions on microwave theory and techniques, IEEE, volume: 63, issue: 7, page: 2335-2342 - Seelmann-Eggebert, Matthias, Aja Abelan, Beatriz, Baldischweiler, Boris, Moschetti, G., Massler, Hermann, Bruch, Daniel, Schlechtweg, Michael, Ambacher, Oliver
On the determination of noise parameters of low-noise transistor devices: NOISE PARAMETERS OF LOW NOISE-TRANSISTOR DEVICES
2015 International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley, volume: 28, issue: 6, page: 684-697 - Ture, Erdin, Brückner, Peter, Raay, Friedbert van, Quay, Rüdiger, Ambacher, Oliver, Alsharef, Mohamed, Granzner, Ralf, Schwierz, Frank
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
2015 10th European Microwave Integrated Circuits Conference (EuMIC), page: 97 - 100 - Mönch, Simon, Costa, Marco Salvatore, Barner, Alexander, Kallfass, Ingmar, Reiner, Richard, Weiß, Beatrix, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver
Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
2015 - Hülsmann, Axel, Zech, Christian, Klenner, Mathias, Tessmann, Axel, Leuther, Arnulf, Lopez-Diaz, Daniel, Schlechtweg, Michael, Ambacher, Oliver
Radar system components to detect small and fast objects
2015 - Cäsar, Markus, Ambacher, Oliver
Reliability studies of GaN high electron mobility transistors
2015, , - Espinosa, Nayeli, Schwarz, Stefan U., Cimalla, Volker, Ambacher, Oliver
Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors
2015 MRS online proceedings library, MRS, volume: 1763, page: 1-6 - Weiß, Beatrix, Reiner, Richard, Quay, Rüdiger, Waltereit, Patrick, Benkhelifa, Fouad, Mikulla, Michael, Schlechtweg, Michael, Ambacher, Oliver
Switching frequency modulation for GaN-based power converters
2015 IEEE Energy Conversion Congress and Exposition (ECCE), page: 4361 - 4366 - Hahn, Herwig, Benkhelifa, Fouad, Ambacher, Oliver, Brunner, Frank, Noculak, Achim, Kalisch, Holger, Vescan, Andrei
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
2015 IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), volume: 62, issue: 2, page: 538-545 - Zuerbig, Verena, Pätz, Daniel, Fries, J., Bichra, M., Pletschen, Wilfried, Holc, Katarzyna, Reusch, Markus, Nebel, Christoph E., Sinzinger, Stefan, Ambacher, Oliver, Lebedev, Vadim
Tunable multisegment SixNy/AlN piezo lenses for wavefront correction
2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), page: 2045 - 2048 - Benkhelifa, Fouad, Müller, Stefan G., Polyakov, Vladimir, Breuer, Steffen, Czap, Heiko, Manz, Christian, Mikulla, Michael, Ambacher, Oliver
Vertical Buffer Leakage and Temperature Effects on the Breakdown Performance of GaN/AlGaN HEMTs on Si Substrate
2015 ECS Transactions, The Electrochemical Society, volume: 69, issue: 11, page: 65-70 - Baeumler, Martina, Dammann, Michael, Wespel, Matthias, George, Roshna, Konstanzer, Helmer, Maroldt, Stephan, Polyakov, Vladimir, Müller, Stefan G., Bronner, Wolfgang, Brückner, Peter, Benkhelifa, Fouad, Waltereit, Patrick, Quay, Rüdiger, Mikulla, Michael, Wagner, Joachim, Ambacher, Oliver, Graff, Andreas, Altmann, Frank, Simon, Michel, Lorenzini, Martino, Fagerlind, Martin, Wel, Paul J. van der, Rödle, Thomas
With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
2015 Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications
2014
- Leuther, Arnulf, Tessmann, Axel, Doria, Patrick, Ohlrogge, Matthias, Seelmann-Eggebert, Matthias, Masler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
20 nm Metamorphic HEMT technology for terahertz monolithic integrated circuits
2014 - Tessmann, Axel, Hurm, Volker, Leuther, Arnulf, Massler, Hermann, Weber, Rainer, Kuri, Michael, Riessle, Markus, Stulz, Hans-Peter, Zink, Martin, Schlechtweg, Michael, Ambacher, Oliver, Närhi, Tapani
243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology
2014 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 6, issue: 3-4, page: 215-223 - Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Hurm, Volker, Kuri, Michael, Zink, Martin, Riessle, Markus, Stulz, Hans-Peter, Schlechtweg, Michael, Ambacher, Oliver
A 600 GHz low-noise amplifier module
2014 - Weber, Rainer, Schwantuschke, Dirk, Brückner, Peter, Quay, Rüdiger, Raay, Friedbert van, Ambacher, Oliver
A 92 GHz GaN HEMT voltage-controlled oscillator MMIC
2014 - Tessmann, Axel, Leuther, Arnulf, Hurm, Volker, Massler, Hermann, Wagner, Sandrine, Kuri, Michael, Zink, Martin, Riessle, Markus, Stulz, Hans-Peter, Schlechtweg, Michael, Ambacher, Oliver
A Broadband 220-320 GHz Medium Power Amplifier Module
2014 - Bruch, Daniel, Ambacher, Oliver, Kallfass, Ingmar, Seelmann-Eggebert, Matthias
A Compact In-Situ Cryogenic Noise Measurement System for Characterization of Low Noise Ampliers
2014, , - Thome, Fabian, Maroldt, Stephan, Schlechtweg, Michael, Ambacher, Oliver
A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s
2014 - Maroldt, Stephan, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver
A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
2014 - Waltereit, Patrick, Leuther, Arnulf, Rüster, Joachim, Czap, Heiko, Preschle, M., Iannucci, Robert, Müller, Stefan G., Mikulla, Michael, Ambacher, Oliver
A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage
2014 - Ohlrogge, Matthias, Seelmann-Eggebert, Matthias, Leuther, Arnulf, Massler, Hermann, Tessmann, Axel, Weber, Rainer, Schwantuschke, Dirk, Schlechtweg, Michael, Ambacher, Oliver
A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications
2014 - Maier, Thomas, Carrubba, Vincenzo, Quay, Rüdiger, Raay, Friedbert van, Ambacher, Oliver
Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies
2014 - Quay, Rüdiger, Schwantuschke, Dirk, Brueckner, D., Chéron, Jérôme G., Dammann, Michael, Mikulla, Michael, Ambacher, Oliver
Advanced GaN/(In)AlGaN MMICs for applications in space from K-band to W-band frequencies
2014 - Carrubba, Vincenzo, Ture, Erdin, Quay, Rüdiger, Raay, Friedbert van, Mußer, Markus, Ambacher, Oliver
Analysis and performance of drain bias “in-dependent” Class-J power amplifier
2014 Asia-Pacific Microwave Conference, page: 998 - 1000 - Klenner, Mathias, Zech, Christian, Hülsmann, Axel, Schlechtweg, Michael, Wagner, Joachim, Ambacher, Oliver
Analysis of dielectric properties of layered plastics at W-band frequencies
2014 - Klenner, Mathias, Zech, Christian, Hülsmann, Axel, Schlechtweg, Michael, Wagner, Joachim, Ambacher, Oliver
Analysis of dielectric properties of layered plastics at w-band frequencies Sensors and Measuring Systems
2014 17. ITG/GMA Symposium, page: 1 - 4 - Raay, Friedbert van, Quay, Rüdiger, Seelmann-Eggebert, Matthias, Schwantuschke, Dirk, Peschel, Detlef, Schlechtweg, Michael, Ambacher, Oliver
Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition
2014 - Merkle, Thomas, Leuther, Arnulf, Koch, Stefan, Kallfass, Ingmar, Tessmann, Axel, Wagner, Sandrine, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology
2014 - Ture, Erdin, Carrubba, Vincenzo, Maroldt, Stephan, Muser, Marco, Walcher, Herbert, Quay, Rüdiger, Ambacher, Oliver
Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering
2014 9th European Microwave Integrated Circuit Conference, page: 345 - 348 - Pletschen, Wilfried, Linkohr, Stefanie, Kirste, Lutz, Cimalla, Volker, Müller, Stefan G., Himmerlich, Marcel, Krischok, Stefan, Ambacher, Oliver
Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment
2014 MRS Proceedings, Cambridge University Press (CUP), volume: 1736 - Weiß, Beatrix, Reiner, Richard, Quay, Rüdiger, Waltereit, Patrick, Müller, Stefan G., Benkhelifa, Fouad, Mikulla, Michael, Schlechtweg, Michael, Ambacher, Oliver
Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
2014 - Ambacher, Oliver, Ostendorf, Ralf, Bleh, Daniela, Merten, A., Grahmann, J., Schmidt, Ralf, Kunzer, Michael, Hugger, Stefan, Wagner, Joachim
Combining external cavity quantum cascade lasers and MOEMS technology: An approach for miniaturization and fast wavelength scanning
2014 - Klenner, Mathias, Zech, Christian, Hulsmann, Axel, Schlechtweg, Michael, Ambacher, Oliver
Compact quasi-optical focusing system for a 94 GHz FMCW radar
2014 - Kotiranta, Mikko, Bruch, Daniel, Leuther, Arnulf, Massler, Hermann, Seelmann-Eggebert, Matthias, Schlechtweg, Michael, Ambacher, Oliver, Turk, Sener, Goliasch, Jens, Schäfer, Frank
Cryogenic low noise amplifier development for 67–116 GHz
2014 - Zuerbig, Verena, Hees, Jakob, Pletschen, Wilfried, Sah, Ram Ekwal, Wolfer, Marco Thomas, Kirste, Lutz, Lang, Nicola, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Elastic properties of ultrathin diamond/AlN membranes
2014 Thin Solid Films, Elsevier BV, volume: 558, page: 267-271 - Baeumler, Martina, Polyakov, Vladimir, Gütle, Frank, Dammann, Michael, Benkhelifa, Fouad, Waltereit, Patrick, Reiner, Richard, Müller, Stefan G., Wespel, Matthias, Quay, Rüdiger, Mikulla, Michael, Wagner, Joachim, Ambacher, Oliver
Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications
2014 Acta Physica Polonica A, Institute of Physics, Polish Academy of Sciences, volume: 125, issue: 4, page: 982-985 - Baeumler, Martina, Polyakov, Vladimir, Wespel, Matthias, Dammann, Michael, Anto, Robins, Waltereit, Patrick, Reiner, Richard, Müller, Stefan G., Quay, Rüdiger, Mikulla, Michael, Wagner, Joachim, Ambacher, Oliver
Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
2014 - Shokhovets, Sviatoslav, Bärwolf, F., Gobsch, Gerhard, Runge, E., Köhler, Klaus, Ambacher, Oliver
Excitons and exciton-phonon coupling in the optical response of GaN: Excitons and exciton-phonon coupling in the optical response of GaN
2014 physica status solidi (c), Wiley, volume: 11, issue: 2, page: 297-301 - Méndez, Bianchi, Lorenz, Katharina, Fraboni, Beatrice, Ambacher, Oliver
Functional Nanowires: Synthesis, Characterization and Applications
2014 physica status solidi (c), Wiley, volume: 11, issue: 2, page: 313-314 - Aidam, Rolf, Diwo, Elke, Godejohann, Birte-Julia, Kirste, Lutz, Quay, Rüdiger, Ambacher, Oliver
Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications: Growth model investigation for AlN/Al(Ga)InN
2014 physica status solidi (a), Wiley, volume: 211, issue: 12, page: 2854-2860 - Kallfass, Ingmar, Eren, G., Weber, Rainer, Wagner, Sandrine, Schwantuschke, Dirk, Quay, Rüdiger, Ambacher, Oliver
High linearity active GaN-HEMT down-converter MMIC for E-band radar applications
2014 - Albrecht, Björn, Kopta, Susanne, John, Oliver, Rutters, Martin, Kunzer, Michael, Driad, Rachid, Marenco, Norman, Köhler, Klaus, Walther, Martin, Ambacher, Oliver
Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation
2014 IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), volume: 20, issue: 6, page: 166-172 - Masur, J.-M., Ambacher, Oliver
InAs/GaSb-Infrarotdetektoren mit reduziertem Dunkelstrom
2014, , - Holc, Katarzyna, Jakob, Annik, Weig, Thomas, Köhler, Klaus, Ambacher, Oliver, Schwarz, Ulrich T.
Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes
2014 - Wespel, Matthias, Baeumler, Martina, Polyakov, Vladimir, Dammann, Michael, Reiner, Richard, Waltereit, Patrick, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
2014 Microelectronics Reliability, Elsevier BV, volume: 54, issue: 12, page: 2656-2661 - Waltereit, Patrick, Reiner, Richard, Wespel, Matthias, Weiß, Beatrix, Czap, Heiko, Dammann, Michael, Müller, Stefan G., Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
2014 - Thome, Fabian, Leuther, Arnulf, Maroldt, Stephan, Schlechtweg, Michael, Ambacher, Oliver
Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier
2014 - Lebedev, Vadim, Iankov, Dimitre, Lang, Nicola, Zuerbig, Verena, Wild, Christoph, Cimalla, Volker, Ambacher, Oliver
Nano-diamond based spheres for radio frequency electromechanical resonators
2014 Journal of Micromechanics and Microengineering, IOP Publishing, volume: 24, issue: 4, page: 045015 - Holc, Katarzyna, Jakob, Annik, Weig, Thomas, Köhler, Klaus, Schwarz, Ulrich T., Müller, Angelina, Pauls, M., Wapler, Matthias C., Wallrabe, Ulrike, Ambacher, Oliver
New tools for optogenectics: Nitride laser diodes combined with axicons for non-invasive neuronal stimulation
2014 - Reiner, Richard, Waltereit, Patrick, Benkhelifa, Fouad, Walcher, Herbert, Quay, Rüdiger, Schlechtweg, Michael, Ambacher, Oliver
Novel layout and packaging for lateral, low-resistance GaN-on-Si power transistors
2014 - Schade, Lukas, Ambacher, Oliver, Schwarz, Ulrich T.
Optische Polarisationsabhängigkeit semipolarer und nonpolarer InGan-Quantenfilme und ihre Ladungsträgerstatitsik
2014, , - Thome, Fabian, Leuther, Arnulf, Maroldt, Stephan, Schlechtweg, Michael, Ambacher, Oliver
Planar Zero Bias Schottky Diodes on an InGaAs Metamorphic HEMT MMIC Process
2014 IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 24, issue: 12, page: 860-862 - Iankov, Dimitre, Zuerbig, Verena, Pletschen, Wilfried, Giese, Christian, Iannucci, Robert, Ambacher, Oliver, Lebedev, Vadim
Processing of Nanoscale Gaps for Boron-doped Nanocrystalline Diamond Based MEMS
2014 Procedia Engineering, Elsevier BV, volume: 87, page: 903-906 - Schwantuschke, Dirk, Aja Abelan, Beatriz, Seelmann-Eggebert, Matthias, Quay, Rüdiger, Leuther, Arnulf, Brückner, Peter, Schlechtweg, Michael, Mikulla, Michael, Kallfass, Ingmar, Ambacher, Oliver
Q- and E-band amplifier MMICs for satellite communication
2014 - Carrubba, Vincenzo, Maroldt, Stephan, Mußer, Markus, Walcher, Herbert, Raay, Friedbert van, Quay, Rüdiger, Ambacher, Oliver, Wiegner, Dirk, Seyfried, Ulrich, Bohn, Thomas, Pascht, Andreas
Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach
2014 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 6, issue: 02, page: 115-128 - Dammann, Michael, Baeumler, Martina, Anto, Robins, Konstanzer, Helmer, Brückner, Peter, Polyakov, Vladimir, Wespel, Matthias, Müller, Stefan G., Schwantuschke, Dirk, Maroldt, Stephan, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
2014 - Stehle, Jochen, Hong, Vu A., Feyh, Ando, O'Brien, Gary, Yama, Gary, Ambacher, Oliver, Kim, B., Kenny, Thomas W.
SILICON MIGRATION OF THROUGH-HOLES IN SINGLE- AND POLY-CRYSTALLINE SILICON MEMBRANES
2014 Proc. Solid-State Sensors, Actuat., Microsystems Workshop, Hilton Head, page: 32 - 35 - Espinosa, N., Schwarz, Stefan U., Cimalla, Volker, Ambacher, Oliver
Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors
2014 - Carrubba, Vincenzo, Quay, Rüdiger, Maroldt, Stephan, Mußer, Markus, Raay, Friedbert van, Ambacher, Oliver
Source/load pull investigation of AlGaN/GaN power transistors with ultra-high efficiency
2014 - Hahn, H., Benkhelifa, Fouad, Ambacher, Oliver, Noculak, Achim, Kalisch, Holger, Vescan, Andrei
Systematic study of steps towards achieving enhancement mode GaN-based HFETs
2014 - Hahn, H., Benkhelifa, Fouad, Ambacher, Oliver, Kalisch, Holger, Vescan, Andrei
Threshold voltage behaviour in GaN-based MIS-HFETs by thickness variation of atomic layer deposited AlO(x)
2014 - Kopp, Fabian, Ambacher, Oliver, Schwarz, Ulrich T.
Verbesserung der Abbildungsqualität blauer Projektionslichtquellen
2014, , - Dennler, Philippe, Quay, Rüdiger, Brückner, Peter, Schlechtweg, Michael, Ambacher, Oliver
Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
2014 - Freude, Wolfgang, Koenig, Swen, Lopez-Diaz, Daniel, Antes, Jochen, Boes, Florian, Henneberger, Ralf, Leuther, Arnulf, Tessmann, Axel, Schmogrow, Rene M., Hillerkuss, David, Palmer, Robert, Zwick, Thomas, Koos, Christian, Ambacher, Oliver, Leuthold, Juerg, Kallfass, Ingmar
Wireless communications on THz carriers takes shape
2014 - Koenig, Swen, Lopez-Diaz, Daniel, Antes, Jochen, Boes, Florian, Henneberger, Ralf, Leuther, Arnulf, Tessmann, Axel, Schmogrow, Rene M., Hillerkuss, David, Palmer, Robert, Zwick, Thomas, Koos, Christian, Freude, Wolfgang, Ambacher, Oliver, Leuthold, Juerg, Kallfass, Ingmar
Wireless sub-THz communication system with high data rate enabled by RF photonics and active MMIC technology
2014 IEEE Photonics Conference, page: 414 - 415
2013
- Maroldt, Stephan, Quay, Rüdiger, Dennler, Philippe, Schwantuschke, Dirk, Mußer, Markus, Dammann, Michael, Aidam, Rolf, Waltereit, Patrick, Tessmann, Axel, Ambacher, Oliver
(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
2013 Japanese Journal of Applied Physics, IOP Publishing, volume: 52, issue: 8S, page: 08JN13 - Koenig, Swen, Boes, Florian, Lopez-Diaz, Daniel, Antes, Jochen, Henneberger, Ralf, Schmogrow, Rene M., Hillerkuss, David, Palmer, Robert, Zwick, Thomas, Koos, Christian, Freude, Wolfgang, Ambacher, Oliver, Kallfass, Ingmar, Leuthold, Juerg
100 Gbit/s Wireless Link with mm-Wave Photonics
2013 - Leuther, Arnulf, Tessmann, Axel, Dammann, Michael, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
35 nm mHEMT Technology for THz and ultra low noise applications
2013 - Lopez-Diaz, Daniel, Tessmann, Axel, Leuther, Arnulf, Wagner, Sandrine, Schlechtweg, Michael, Ambacher, Oliver, Koenig, Swen, Antes, Jochen, Boes, Florian, Kurz, F., Henneberger, Ralf, Kallfass, Ingmar
A 240 GHz quadrature receiver and transmitter for data transmission up to 40 Gbit/s
2013 - Hurm, Volker, Weber, Rainer, Tessmann, Axel, Massler, Hermann, Leuther, Arnulf, Kuri, Michael, Riessle, Markus, Stulz, Hans-Peter, Zink, Martin, Schlechtweg, Michael, Ambacher, Oliver, Närhi, Tapani
A 243 GHz LNA Module Based on mHEMT MMICs With Integrated Waveguide Transitions
2013 IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 23, issue: 9, page: 486-488 - Tessmann, Axel, Hurm, Volker, Leuther, Arnulf, Massler, Hermann, Weber, Rainer, Kuri, Michael, Riessle, Markus, Stulz, Hans-Peter, Zink, Martin, Schlechtweg, Michael, Ambacher, Oliver, Närhi, Tapani
A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers
2013 - Weber, Rainer, Schwantuschke, Dirk, Brückner, Peter, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver, Kallfass, Ingmar
A 67 GHz GaN Voltage-Controlled Oscillator MMIC With High Output Power
2013 IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 23, issue: 7, page: 374-376 - Zech, Christian, Hülsmann, Axel, Weber, Rainer, Tessmann, Axel, Wagner, Sandrine, Schlechtweg, Michael, Leuther, Arnulf, Ambacher, Oliver
A Compact 94 GHz FMCW Radar MMIC based on 100 nm InGaAs mHEMT Technology with Integrated Transmission Signal Conditioning
2013 - Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Lewark, Ulrich Johannes, Wagner, Sandrine, Weber, Rainer, Kuri, Michael, Zink, Martin, Riessle, Markus, Stulz, Hans-Peter, Schlechtweg, Michael, Ambacher, Oliver, Sommer, Rachel, Wahlen, Alfred, Stanko, S.
A Monolithic Integrated mHEMT Chipset for High-Resolution Submillimeter-Wave Radar Applications
2013 - Zech, Christian, Hülsmann, Axel, Schlechtweg, Michael, Georgi, Leopold, Gulan, Heiko, Ambacher, Oliver
A compact, universal and cost-efficient antenna setup for mmW-radar applications
2013 - Schwantuschke, Dirk, Seelmann-Eggebert, Matthias, Brückner, Peter, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver, Kallfass, Ingmar
A fully scalable compact Small-Signal Modeling Approach for 100 nm AlGaN/GaN HEMTs
2013 - Albrecht, Björn, Kopta, Susanne, John, Oliver, Kirste, Lutz, Driad, Rachid, Köhler, Klaus, Walther, Martin, Ambacher, Oliver
AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific DetectivityD*
2013 Japanese Journal of Applied Physics, IOP Publishing, volume: 52, issue: 8S, page: 08JB28 - Hees, Jakob, Ambacher, Oliver
All-diamond nanoelectrode arrays
2013, , - Reiner, Richard, Waltereit, Patrick, Benkhelifa, Fouad, Müller, Stefan G., Wespel, Matthias, Quay, Rüdiger, Schlechtweg, Michael, Mikulla, Michael, Ambacher, Oliver
Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications
2013 - Schwarz, Stefan U., Ambacher, Oliver
Biofunktionalisierung und -sensorik mit AlGaN/ GaN-Feldeffekttransistoren
2013, , - Szymkiewicz, Michael, Hülsmann, Axel, Tessmann, Axel, Schlechtweg, Michael, Leuther, Arnulf, Ambacher, Oliver, Koch, Stefan, Riedel, Matthias, Kallfass, Ingmar
Broadband absorption and emission millimeter-wave spectroscopy between 220 and 325 GHz
2013 - Linkohr, Stefanie, Pletschen, Wilfried, Schwarz, Stefan U., Anzt, J., Cimalla, Volker, Ambacher, Oliver
CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors
2013 Journal of Biotechnology, Elsevier BV, volume: 163, issue: 4, page: 354-361 - Sah, Ram Ekwal, Tegenkamp, Christoph, Baeumler, Martina, Bernhardt, Frank, Driad, Rachid, Mikulla, Michael, Ambacher, Oliver
Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition
2013 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, volume: 31, issue: 4, page: 04D111 - Baldischweiler, Boris, Bruch, Daniel, Kallfass, Ingmar, Seelmann-Eggebert, Matthias, Leuther, Arnulf, Peschel, Detlef, Schlechtweg, Michael, Ambacher, Oliver
Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature
2013 - Carrubba, Vincenzo, Maroldt, Stephan, Quay, Rüdiger, Ambacher, Oliver
Class-BJ power amplifier modes: The IMD behavior of reactive terminations
2013 - Thome, Fabian, Massler, Hermann, Wagner, Sandrine, Leuther, Arnulf, Kallfass, Ingmar, Schlechtweg, Michael, Ambacher, Oliver
Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology
2013 - Lang, Nicola, Knöbber, Fabian Andreas, Polyakov, Vladimir, Cimalla, Volker, Pletschen, Wilfried, Sah, Ram Ekwal, Kirste, Lutz, Leopold, Steffen, Hampl, Stefan, Ambacher, Oliver, Lebedev, Vadim
Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations
2013 Sensors and Actuators A: Physical, Elsevier BV, volume: 195, page: 32-37 - Sah, Ram Ekwal, Kirste, Lutz, Kirmse, H., Mildner, M., Wilde, L., Kopta, Susanne, Knöbber, Fabian Andreas, Krieg, M., Cimalla, Volker, Lebedev, Vadim, Ambacher, Oliver
Crystallographic Texture of Submicron Thin Aluminum Nitride Films on Molybdenum Electrode for Suspended Micro and Nanosystems
2013 ECS Journal of Solid State Science and Technology, The Electrochemical Society, volume: 2, issue: 4, page: P180-P184 - Binder, Joachim R., Korona, K. P., Wysmołek, A., Kamińska, M., Köhler, Klaus, Kirste, Lutz, Ambacher, Oliver, Zając, Marcin, Dwiliński, Robert
Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN
2013 Journal of Applied Physics, American Institute of Physics, volume: 114, issue: 22, page: 223504 - Waltereit, Patrick, Reiner, Richard, Müller, Stefan G., Czap, Heiko, Mikulla, Michael, Ambacher, Oliver
Effiziente Energiewandlung mit GaN-basierter Leistungselektronik : Efficient energy conversion using GaN based power electronics
2013 - Lang, Nicola, Iankov, Dimitre, Hees, Jakob, Pletschen, Wilfried, Sah, Ram Ekwal, Kirste, Lutz, Zuerbig, Verena, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Enhanced mechanical performance of AlN/nanodiamond micro-resonators
2013 Journal of Micromechanics and Microengineering, IOP Publishing, volume: 23, issue: 12, page: 125017 - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Cäsar, Markus, Müller, Stefan G., Reiner, Richard, Brückner, Peter, Kiefer, Rudolf, Raay, Friedbert van, Kühn, Jutta, Mußer, Markus, Haupt, Christian, Mikulla, Michael, Ambacher, Oliver
GaN HEMTs and MMICs for space applications
2013 Semiconductor Science and Technology, IOP Publishing, volume: 28, issue: 7, page: 074010 - Waltereit, Patrick, Reiner, Richard, Czap, Heiko, Peschel, Detlef, Müller, Stefan G., Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
GaN-based high voltage transistors for efficient power switching
2013 physica status solidi (c), Wiley, volume: 10, issue: 5, page: 831-834 - Hahn, Herwig, Benkhelifa, Fouad, Ambacher, Oliver, Alam, Assadullah, Heuken, Michael, Yacoub, Hady, Noculak, Achim, Kalisch, Holger, Vescan, Andrei
GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm
2013 Japanese Journal of Applied Physics, IOP Publishing, volume: 52, issue: 9R, page: 090204 - Krauße, Dirk, Ambacher, Oliver
High Power AlGaN/GaN HFETs for Industrial, Scientific and Medical Applications
2013, , - Schwantuschke, Dirk, Brückner, Peter, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
High-Gain Millimeter-Wave AlGaN/GaN Transistors
2013 IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), volume: 60, issue: 10, page: 3112-3118 - Chéron, Jérôme G., Campovecchio, Michel, Quéré, Raymond, Schwantuschke, Dirk, Quay, Rüdiger, Ambacher, Oliver
High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
2013 - Mikulla, Michael, Leuther, Arnulf, Brückner, Peter, Schwantuschke, Dirk, Tessmann, Axel, Schlechtweg, Michael, Ambacher, Oliver, Caris, Michael
High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
2013 - Mußer, Markus, Raay, Friedbert van, Brückner, Peter, Bronner, Wolfgang, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Individual source vias for GaN HEMT power bars
2013 - Raay, Friedbert van, Quay, Rüdiger, Seelmann-Eggebert, Matthias, Schwantuschke, Dirk, Maier, Thomas, Schlechtweg, Michael, Ambacher, Oliver
Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation
2013 - Moser, Rüdiger, Ambacher, Oliver
Laser-µ-Bearbeitung von GaN-basierten Leuchtdioden mit ultrakurzen Laserpulsen
2013, , - Leopold, Steffen, Polster, Tobias, Pätz, Daniel, Knöbber, Fabian Andreas, Ambacher, Oliver, Sinzinger, Stefan, Hoffmann, Martin
MOEMS tunable microlens made of aluminum nitride membranes
2013 Journal of Micro/Nanolithography, MEMS, and MOEMS, SPIE-Intl Soc Optical Eng, volume: 12, issue: 2, page: 023012 - Sah, Ram Ekwal, Driad, Rachid, Bernhardt, Frank, Kirste, Lutz, Leancu, Crenguta-Columbina, Czap, Heiko, Benkhelifa, Fouad, Mikulla, Michael, Ambacher, Oliver
Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3films on GaAs and Si
2013 Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, volume: 31, issue: 4, page: 041502 - Schlechtweg, Michael, Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Wagner, Sandrine, Aidam, Rolf, Rosenzweig, Josef, Ambacher, Oliver, Kallfass, Ingmar, Lewark, Ulrich Johannes, Sommer, Rainer, Wahlen, Alfred, Stanko, Stephan, Ender, Joachim
Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), page: 1 - 4 - Klenner, Mathias, Zech, Christian, Hülsmann, Axel, Tessmann, Axel, Leuther, Arnulf, Schlechtweg, Michael, Wagner, Joachim, Ambacher, Oliver
Multilayer Material Analysis using an Active MillimeterWave Imaging System
2013 - Lang, Nicola, Hees, Jakob, Zuerbig, Verena, Iankov, Dimitre, Pletschen, Wilfried, Sah, Ram Ekwal, Raynor, Brian, Kirste, Lutz, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Nano-diamond vacuum MEMS for RF applications
2013 - Raay, Friedbert van, Quay, Rüdiger, Seelmann-Eggebert, Matthias, Schwantuschke, Dirk, Peschel, Detlef, Schlechtweg, Michael, Ambacher, Oliver
New Low-Frequency Dispersion Model for AlGaN/GaN HEMTs Using Integral Transform and State Description
2013 IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers (IEEE), volume: 61, issue: 1, page: 154-167 - Dennler, Philippe, Quay, Rüdiger, Ambacher, Oliver
Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology
2013 - Zuerbig, Verena, Pätz, Daniel, Pletschen, Wilfried, Hees, Jakob, Sah, Ram Ekwal, Kirste, Lutz, Lang, Nicola, Cimalla, Volker, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Piezo-actuated tunable diamond/AlN micro lenses
2013 - Hees, Jakob, Lang, Nicola, Pletschen, Wilfried, Sah, Ram Ekwal, Wolfer, Marco Thomas, Williams, Oliver A., Lebedev, Vadim, Nebel, Christoph E., Ambacher, Oliver
Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films
2013 Nanotechnology, IOP Publishing, volume: 24, issue: 2, page: 025601 - Lang, Nicola, Zuerbig, Verena, Iankov, Dimitre, Pletschen, Wilfried, Sah, Ram Ekwal, Raynor, Brian, Kirste, Lutz, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Piezoelectrically actuated diamond cantilevers for high-frequency applications
2013 Diamond and Related Materials, Elsevier BV, volume: 38, page: 69-72 - Waltereit, Patrick, Bronner, Wolfgang, Brückner, Peter, Dammann, Michael, Reiner, Richard, Müller, Stefan G., Kühn, Jutta, Mußer, Markus, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Recent developments in GaN HEMTs and MMICs for high power electronics
2013 - Mischo, Markus, Bitterling, Moritz, Himmerlich, Marcel, Krischok, Stefan, Ambacher, Oliver, Cimalla, Volker
Seebeck ozone sensors
2013 - Purkl, Fabian, English, Timothy S., Yama, Gary, Provine, John, Samarao, Ashwin K., Feyh, Ando, Kim, Bongsang, O'Brien, Gary, Ambacher, Oliver, Howe, Roger T., Kenny, Thomas W.
Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
2013 - Lewark, Ulrich Johannes, Tessmann, Axel, Leuther, Arnulf, Zwick, Thomas, Ambacher, Oliver, Kallfass, Ingmar
Signal generation and amplification up to 600 GHz using metamorphic HEMT technology
2013 - Purkl, Fabian, English, Timothy S., Yama, Gary, Provine, John, Samarao, Ashwin K., Feyh, Ando, O'Brien, Gary, Ambacher, Oliver, Howe, Roger T., Kenny, Thomas W.
Sub-10 nanometer uncooled platinum bolometers via plasma enhanced atomic layer deposition
2013 - Quay, Rüdiger, Waltereit, Patrick, Kuhn, J., Brückner, Peter, Heijningen, Marc van, Jukkala, Petri, Hirche, K., Ambacher, Oliver
Submicron-AlGaN/GaN MMICs for space applications
2013 - Tessmann, Axel, Schlechtweg, Michael, Bruch, Daniel, Lewark, Ulrich Johannes, Leuther, Arnulf, Massler, Hermann, Wagner, Sandrine, Seelmann-Eggebert, Matthias, Hurm, Volker, Aidam, Rolf, Kallfass, Ingmar, Ambacher, Oliver
Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication
2013 - Schwarz, Stefan U., Cimalla, Volker, Eichapfel, Georg, Himmerlich, Marcel, Krischok, Stefan, Ambacher, Oliver
Thermal Functionalization of GaN Surfaces with 1-Alkenes
2013 Langmuir, American Chemical Society (ACS), volume: 29, issue: 21, page: 6296-6301 - Hoffmann, R., Ambacher, Oliver
Towards the solid protein surface
2013, , - Antes, Jochen, Koenig, Swen, Lopez-Diaz, Daniel, Boes, Florian, Tessmann, Axel, Henneberger, Ralf, Ambacher, Oliver, Zwick, Thomas, Kallfass, Ingmar
Transmission of an 8-PSK modulated 30 Gbit/s signal using an MMIC-based 240 GHz wireless link
2013 - Zuerbig, Verena, Pletschen, Wilfried, Hees, Jakob, Sah, Ram Ekwal, Kirste, Lutz, Lang, Nicola, Nebel, Christoph E., Ambacher, Oliver, Lebedev, Vadim
Transparent diamond electrodes for tunable micro-optical devices
2013 Diamond and Related Materials, Elsevier BV, volume: 38, page: 101-103 - Leopold, Steffen, Pätz, Daniel, Knöbber, Fabian Andreas, Ambacher, Oliver, Sinzinger, Stefan, Hoffmann, Martin
Tunable cylindrical micro lenses based on aluminum nitride membranes
2013 - De Luca, Marta, Pettinari, Giorgio, Polimeni, Antonio, Capizzi, Mario, Ciatto, Gianluca, Amidani, Lucia, Fonda, Emiliano, Boscherini, Federico, Filippone, Francesco, Bonapasta, Aldo Amore, Knübel, Andreas, Cimalla, Volker, Ambacher, Oliver, Giubertoni, Damiano, Bersani, Massimo
Tuning of the optical properties of In-rich In[sub x]Ga[sub 1−x]N (x=0.82−0.49) alloys by light-ion irradiation at low energy
2013 AIP Conference Proceedings, volume: 1566, issue: 1, page: 93 - 94 - Weissbrodt, Ernst, Schlechtweg, Michael, Ambacher, Oliver, Kallfass, Ingmar
W-band active loads and switching front-end MMICs for radiometer calibration
2013 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 5, issue: 03, page: 293-299 - Koenig, Swen, Lopez-Diaz, Daniel, Antes, Jochen, Boes, Florian, Henneberger, Ralf, Leuther, Arnulf, Tessmann, Axel, Schmogrow, Rene M., Hillerkuss, David, Palmer, Robert, Zwick, Thomas, Koos, Christian, Freude, Wolfgang, Ambacher, Oliver, Leuthold, Juerg, Kallfass, Ingmar
Wireless sub-THz communication system with high data rate
2013 Nature Photonics, Springer Nature, volume: 7, issue: 12, page: 977-981
2012
- Antes, Jochen, Koenig, Swen, Leuther, Arnulf, Massler, Hermann, Leuthold, Juerg, Ambacher, Oliver, Kallfass, Ingmar
220 GHz wireless data transmission experiments up to 30 Gbit/s
2012 IEEE/MTT-S International Microwave Symposium Digest, page: 1 - 3 - Dennler, Philippe, Schwantuschke, Dirk, Quay, Rüdiger, Ambacher, Oliver
8-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
2012 IEEE/MTT-S International Microwave Symposium Digest, page: 1 - 3 - Ayhan, Serdal, Diebold, Sebastian, Scherr, Steffen, Tessmann, Axel, Ambacher, Oliver, Kallfass, Ingmar, Zwick, Thomas
A 96 GHz radar system for respiration and heart rate measurements
2012 IEEE/MTT-S International Microwave Symposium Digest, page: 1 - 3 - Bruch, Daniel, Amils, Ricardo I., Gallego, Juan Daniel, Seelmann-Eggebert, Matthias, Aja Abelan, Beatriz, Schäfer, Frank K., Diez, C., Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver, Kallfass, Ingmar
A Noise Source Module for In-Situ Noise Figure Measurements From DC to 50 GHz at Cryogenic Temperatures
2012 IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 22, issue: 12, page: 657-659 - Schwantuschke, Dirk, Brückner, Peter, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver, Kallfass, Ingmar
A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
2012 7th European Microwave Integrated Circuit Conference, page: 703 - 706 - Diebold, Sebastian, Ayhan, Serdal, Scherr, Steffen, Massler, Hermann, Tessmann, Axel, Leuther, Arnulf, Ambacher, Oliver, Zwick, Thomas, Kallfass, Ingmar
A W-Band MMIC Radar System for Remote Detection of Vital Signs
2012 Journal of Infrared, Millimeter, and Terahertz Waves, Springer Science and Business Media LLC, volume: 33, issue: 12, page: 1250-1267 - Lopez-Diaz, Daniel, Kallfass, Ingmar, Tessmann, Axel, Leuther, Arnulf, Wagner, Sandrine, Schlechtweg, Michael, Ambacher, Oliver
A subharmonic chipset for gigabit communication around 240 GHz
2012 IEEE/MTT-S International Microwave Symposium Digest, page: 1 - 3 - Thome, Fabian, Diebold, Sebastian, Schlechtweg, Michael, Leuther, Arnulf, Ambacher, Oliver, Kallfass, Ingmar
A tunable 140GHz analog phase shifter with high linearity performance
2012 The 7th German Microwave Conference, page: 1 - 4 - Weissbrodt, Ernst, Tessmann, Axel, Schlechtweg, Michael, Kallfass, Ingmar, Ambacher, Oliver
Active load modules for W-band radiometer calibration
2012 - Quay, Rüdiger, Brückner, Peter, Heijningen, Marc van, Mikulla, Michael, Ambacher, Oliver
Advances on GaN mm-wave power amplifiers to 100 GHz
2012 - Krauße, Daniel, Benkhelifa, Fouad, Reiner, Richard, Quay, Rüdiger, Ambacher, Oliver
AlGaN/GaN power amplifiers for ISM applications
2012 Solid-State Electronics, Elsevier BV, volume: 74, page: 108-113 - Maroldt, Stephan, Brückner, Peter, Quay, Rüdiger, Ambacher, Oliver, Maier, Simone, Wiegner, Dirk, Pascht, Andreas
An integrated 12 Gbps switch-mode driver MMIC with 5 VPP for digital transmitters in 100 nm GaN technology
2012 7th European Microwave Integrated Circuit Conference, page: 115 - 118 - Zech, Christian, Diebold, Sebastian, Wagner, Sandrine, Schlechtweg, Michael, Leuther, Arnulf, Ambacher, Oliver, Kallfass, Ingmar
An ultra-broadband low-noise traveling-wave amplifier based on 50nm InGaAs mHEMT technology
2012 The 7th German Microwave Conference, page: 1 - 4 - Bruch, Daniel, Seelmann-Eggebert, Matthias, Kallfass, Ingmar, Leuther, Arnulf, Diebold, Sebastian, Schlechtweg, Michael, Ambacher, Oliver
Broadband MMIC tuners dedicated to noise parameter measurements at cryogenic temperatures
2012 Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, page: 1 - 3 - Carrubba, Vincenzo, Quay, Rüdiger, Schlechtweg, Michael, Ambacher, Oliver, Akmal, Muhammad, Lees, Jonathan, Deschner, Benedikt J., Tasker, Paul J., Cripps, Steve C.
Continuous-ClassF3 power amplifier mode varying simultaneously first 3 harmonic impedances
2012 IEEE/MTT-S International Microwave Symposium Digest, page: 1 - 3 - Brückner, Peter, Kiefer, Rudolf, Haupt, Christian, Leuther, Arnulf, Müller, Stefan G., Quay, Rüdiger, Schwantuschke, Dirk, Mikulla, Michael, Ambacher, Oliver
Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
2012 physica status solidi (c), Wiley, volume: 9, issue: 3-4, page: 903-906 - Smirnov, Waldemar, Ambacher, Oliver
Diamond diversity from micro-and nanostructuring to multifunctional tools and devices
2012, , - Carrubba, Vincenzo, Maroldt, Stephan, Mußer, Markus, Walcher, Herbert, Schlechtweg, Michael, Quay, Rüdiger, Ambacher, Oliver
Dual-band Class-ABJ AlGaN/GaN high power amplifier
2012 7th European Microwave Integrated Circuit Conference, page: 635 - 638 - Lebedev, Vadim, Lang, Nicola, Knöbber, Fabian Andreas, Sah, Ram Ekwal, Pletschen, Wilfried, Raynor, Brian, Polyakov, Vladimir, Cimalla, Volker, Ambacher, Oliver
Electrostatically coupled vibration modes in unimorph complementary microcantilevers
2012 Applied Physics Letters, AIP Publishing, volume: 100, issue: 12, page: 124104 - Gutt, Richard, Ambacher, Oliver
Epitaxie von AlGaN-basierten Leuchtdioden für den UV-A-Wellenlängenbereich
2012, , - Lebedev, Vadim, Knöbber, Fabian Andreas, Lang, Nicola, Sah, Ram Ekwal, Pletschen, Wilfried, Cimalla, Volker, Ambacher, Oliver
Evaluation of AlN material properties through vibration analysis of thin membranes
2012 physica status solidi (c), Wiley, volume: 9, issue: 2, page: 403-406 - Hahn, Herwig, Reuters, Benjamin, Wille, Ada, Ketteniss, Nico, Benkhelifa, Fouad, Ambacher, Oliver, Kalisch, Holger, Vescan, Andrei
First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET
2012 Semiconductor Science and Technology, IOP Publishing, volume: 27, issue: 5, page: 055004 - Reiner, Richard, Waltereit, Patrick, Benkhelifa, Fouad, Müller, Stefan G., Walcher, Herbert, Wagner, Sandrine, Quay, Rüdiger, Schlechtweg, Michael, Ambacher, Oliver
Fractal structures for low-resistance large area AlGaN/GaN power transistors
2012 - Hurm, Volker, Tessmann, Axel, Massler, Hermann, Leuther, Arnulf, Riessle, Markus, Zink, Martin, Schlechtweg, Michael, Ambacher, Oliver
GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500-750 GHz)
2012 - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Cäsar, Markus, Müller, Stefan G., Raay, Friedbert van, Kiefer, Rudolf, Brückner, Peter, Kühn, Jutta, Mußer, Markus, Kirste, Lutz, Haupt, Christian, Pletschen, Wilfried, Lim, Taek, Aidam, Rolf, Mikulla, Michael, Ambacher, Oliver
GaN-based high-frequency devices and circuits: A Fraunhofer perspective
2012 physica status solidi (a), Wiley, volume: 209, issue: 3, page: 491-496 - Schwantuschke, Dirk, Kallfass, Ingmar, Quay, Rüdiger, Ambacher, Oliver
GaN-based millimeter-wave monolithic integrated circuits
2012 19th International Conference on Microwaves, Radar & Wireless Communications, volume: 1, page: 97 - 98 - Maroldt, Stephan, Ambacher, Oliver
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
2012, , - Cäsar, Markus, Dammann, Michael, Polyakov, Vladimir, Waltereit, Patrick, Bronner, Wolfgang, Baeumler, Martina, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
2012 IEEE International Reliability Physics Symposium (IRPS) - Driad, Rachid, Schmidt, Ralf, Kirste, Lutz, Loesch, Rainer, Mikulla, Michael, Ambacher, Oliver
Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation
2012 physica status solidi c, volume: 9, issue: 2, page: 381 - 384 - Rösener, Benno, Ambacher, Oliver
Halbleiter-Scheibenlaser hoher Brillanz für den Wellenlängenbereich von 2,0-2,8 µm
2012, , - Waltereit, Patrick, Kühn, Jutta, Quay, Rüdiger, Raay, Friedbert van, Dammann, Michael, Cäsar, Markus, Müller, Stefan G., Mikulla, Michael, Ambacher, Oliver, Lätti, J., Rostewitz, M., Hirche, K., Däubler, Joachim
High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10^5hours
2012 7th European Microwave Integrated Circuit Conference, page: 123 - 126 - Weissbrodt, Ernst, Leuther, Arnulf, Schlechtweg, Michael, Kallfass, Ingmar, Ambacher, Oliver
Highly integrated switching calibration front-end MMIC with active loads for w-band radiometers
2012 7th European Microwave Integrated Circuit Conference, page: 203 - 206 - Waltereit, Patrick, Bronner, Wolfgang, Mußer, Markus, Raay, Friedbert van, Dammann, Michael, Cäsar, Markus, Müller, Stefan G., Kirste, Lutz, Köhler, Klaus, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
2012 Journal of Applied Physics, AIP Publishing, volume: 112, issue: 5, page: 053718 - Linkohr, Stefanie, Pletschen, Wilfried, Polyakov, Vladimir, Himmerlich, Marcel, Lorenz, Pierre, Krischok, Stefan, Kirste, Lutz, Müller, Stefan G., Ambacher, Oliver, Cimalla, Volker
Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures
2012 physica status solidi (c), Wiley, volume: 9, issue: 3-4, page: 1096-1098 - Weissbrodt, Ernst, Hülsmann, Axel, Massler, Hermann, Leuther, Arnulf, Kallfass, Ingmar, Schlechtweg, Michael, Ambacher, Oliver
Integrated D-Band MMICs for Receiver Front-Ends
2012 - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Cäsar, Markus, Brückner, Peter, Kiefer, Rudolf, Raay, Friedbert van, Kühn, Jutta, Mußer, Markus, Haupt, Christian, Mikulla, Michael, Ambacher, Oliver, Müller, Stefan G., Reiner, Richard
Is GaN the ideal material for space?
2012 - Dammann, Michael, Cäsar, Markus, Müller, Stefan G., Reiner, Richard, Brückner, Peter, Kiefer, Rudolf, Raay, Friedbert van, Kühn, Jutta, Mußer, Markus, Haupt, Christian, Mikulla, Michael, Ambacher, Oliver, Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger
Is GaN the ideal material for space?
2012 - Gütle, Frank, Baeumler, Martina, Dammann, Michael, Cäsar, Markus, Walcher, Herbert, Waltereit, Patrick, Bronner, Wolfgang, Müller, Stefan G., Kiefer, Rudolf, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver, Graff, Andreas, Altmann, Frank, Simon, Michel
Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs
2012 Materials Science Forum, Trans Tech Publications, Ltd., volume: 725, page: 79-82 - Schlechtweg, Michael, Tessmann, Axel, Hülsmann, Axel, Kallfass, Ingmar, Leuther, Arnulf, Aidam, Rolf, Zech, Christian, Lewark, Ulrich Johannes, Massler, Hermann, Riessle, Markus, Zink, Martin, Rosenzweig, Josef, Ambacher, Oliver
Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications
2012, Future Security Research Conference, page: 200 - 211, - Quay, Rüdiger, Waltereit, Patrick, Benkhelifa, Fouad, Reiner, Richard, Mikulla, Michael, Ambacher, Oliver
Novel III-N devices: Progess on GaN-based DC-DC converters for space
2012 - Wang, Chunyu, Bagchi, Sayan, Bitterling, Moritz, Becker, Robert W., Köhler, Klaus, Cimalla, Volker, Ambacher, Oliver, Chaumette, C.
Photon stimulated ozone sensor based on indium oxide nanoparticles II: Ozone monitoring in humidity and water environments
2012 Sensors and Actuators B: Chemical, Elsevier BV, volume: 164, issue: 1, page: 37-42 - Linkohr, Stefanie, Pletschen, Wilfried, Kirste, Lutz, Himmerlich, Marcel, Lorenz, Pierre, Krischok, Stefan, Polyakov, Vladimir, Müller, Stefan G., Ambacher, Oliver, Cimalla, Volker
Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs
2012 physica status solidi (c), Wiley, volume: 9, issue: 3-4, page: 938-941 - Gütle, Frank, Polyakov, Vladimir, Baeumler, Martina, Benkhelifa, Fouad, Müller, Stefan G., Dammann, Michael, Cäsar, Markus, Quay, Rüdiger, Mikulla, Michael, Wagner, Joachim, Ambacher, Oliver
Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
2012 Semiconductor Science and Technology, IOP Publishing, volume: 27, issue: 12, page: 125003 - Dammann, Michael, Czap, Heiko, Rüster, Joachim, Baeumler, Martina, Gütle, Frank, Waltereit, Patrick, Benkhelifa, Fouad, Reiner, Richard, Cäsar, Markus, Konstanzer, Helmer, Müller, Stefan G., Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Reverse bias stress test of GaN HEMTs for high-voltage switching applications
2012 IEEE International Integrated Reliability Workshop Final Report, page: 105 - 108 - Knöbber, Fabian Andreas, Zuerbig, Verena, Lang, Nicola, Hees, Jakob, Sah, Ram Ekwal, Baeumler, Martina, Leopold, Steffen, Pätz, Daniel, Ambacher, Oliver, Lebedev, Vadim
Static and dynamic characterization of AlN and nanocrystalline diamond membranes
2012 physica status solidi (a), Wiley, volume: 209, issue: 10, page: 1835-1842 - Antes, Jochen, Mahler, Tobias, Zwick, Thomas, Tessmann, Axel, Ambacher, Oliver, Kallfass, Ingmar
Study on data transmission of complex modulated signals using an MMIC-based 220 GHz wireless link
2012 International Symposium on Signals, Systems, and Electronics (ISSSE), page: 1 - 4 - Himmerlich, Marcel, Krischok, Stefan, Wang, Chunyu, Cimalla, Volker, Ambacher, Oliver
Surface chemical and electronic properties of In2O3 and In2O3-x nanoparticles for ozone detection
2012 Verhandlungen der Deutschen Physikalischen Gesellschaft - Himmerlich, Marcel, Wang, Chunyu, Cimalla, Volker, Ambacher, Oliver, Krischok, Stefan
Surface properties of stoichiometric and defect-rich indium oxide films grown by MOCVD
2012 Journal of Applied Physics, AIP Publishing, volume: 111, issue: 9, page: 093704 - Mánuel, José M., Morales, Francisco M., García, Rafael, Aidam, Rolf, Kirste, Lutz, Ambacher, Oliver
Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
2012 Journal of Crystal Growth, Elsevier BV, volume: 357, page: 35-41 - Waltereit, Patrick, Bronner, Wolfgang, Kiefer, Rudolf, Quay, Rüdiger, Dammann, Michael, Cäsar, Markus, Brückner, Peter, Müller, Stefan G., Mikulla, Michael, Ambacher, Oliver
Trade-offs between performance and reliability in AlGaN/GaN transistors
2012 physica status solidi (c), Wiley, volume: 9, issue: 2, page: 365-368 - Diebold, Sebastian, Goetzl, D., Ayhan, Serdal, Scherr, Steffen, Pahl, Philipp, Massler, Hermann, Tessmann, Axel, Leuther, Arnulf, Ambacher, Oliver, Zwick, Thomas, Kallfass, Ingmar
W-band MMIC radar modules for remote detection of vital signs
2012 7th European Microwave Integrated Circuit Conference, page: 195 - 198 - Antes, Jochen, Lopez-Diaz, Daniel, Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Zwick, Thomas, Ambacher, Oliver, Kallfass, Ingmar
Wireless multi-gigabit data transmission using active MMIC components at 220 GHz
2012 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 4, issue: 3, page: 291-298
2011
- Leuther, Arnulf, Koch, Sabine, Tessmann, Axel, Kallfass, Ingmar, Merkle, Thomas, Massler, Hermann, Lösch, Rainer, Schlechtweg, Michael, Saito, Shin, Ambacher, Oliver
20 NM metamorphic HEMT with 660 GHZ F(T)
2011 - Rösener, Benno, Kaspar, Sebastian, Rattunde, Marcel, Töpper, Tino, Manz, Christian, Köhler, Klaus, Ambacher, Oliver, Wagner, Joachim
2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz
2011 Optics Letters, The Optical Society, volume: 36, issue: 18, page: 3587 - Yang, Qi, Ambacher, Oliver
9.4 Quantum cascade lasers
2011 Laser Systems, page: 74 - 86 - Kallfass, Ingmar, Massler, Hermann, Wagner, Sandrine, Schwantuschke, Dirk, Brückner, Peter, Haupt, Christian, Kiefer, Rudolf, Quay, Rüdiger, Ambacher, Oliver
A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
2011 - Bruch, Daniel, Schafer, F., Aja Abelan, Beatriz, Leuther, Arnulf, Seelmann-Eggebert, Matthias, Kallfass, Ingmar, Schlechtweg, Michael, Ambacher, Oliver
A single chip broadband noise source for noise measurements at cryogenic temperatures
2011 - Kallfass, Ingmar, Quay, Rüdiger, Massler, Hermann, Wagner, Sandrine, Schwantuschke, Dirk, Haupt, Christian, Kiefer, Rudolf, Ambacher, Oliver
A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology
2011 IEEE MTT-S International Microwave Symposium, page: 1 - 4 - Zech, Christian, Hülsmann, Axel, Kallfass, Ingmar, Tessmann, Axel, Zink, Martin, Schlechtweg, Michael, Leuther, Arnulf, Ambacher, Oliver
Active millimeter-wave imaging system for material analysis and object detection
2011 - Krauße, Daniel, Benkhelifa, Fouad, Reiner, Richard, Quay, Rüdiger, Ambacher, Oliver
AlGaN/GaN power amplifiers for ISM frequency applications
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), page: 283 - 286 - Haupt, Christian, Ambacher, Oliver
AlGaN/GaN-based millimeter-wave high electron mobility transistors
2011, , - Lang, Nicola, Knöbber, Fabian Andreas, Ambacher, Oliver, Lebedev, Vadim, Sah, Ram Ekwal, Cimalla, Volker
AlN-based microstructures for biocompatible piezo-generation
2011 Verhandlungen der Deutschen Physikalischen Gesellschaft - Lang, Nicola, Knöbber, Fabian Andreas, Hampl, S., Pletschen, Wilfried, Sah, Ram Ekwal, Cimalla, Volker, Lebedev, Vadim, Ambacher, Oliver
AlN-basierte mikroelektromechanische Strukturen für Implantate
2011 - Mußer, Markus, Quay, Rüdiger, Raay, Friedbert van, Mikulla, Michael, Ambacher, Oliver
Analysis of GaN HEMTs for broadband high-power amplifier design
2011 - Driad, Rachid, Benkhelifa, Fouad, Kirste, Lutz, Mikulla, Michael, Ambacher, Oliver
Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors
2011 Journal of The Electrochemical Society, The Electrochemical Society, volume: 158, issue: 12, page: H1279 - Maroldt, Stephan, Quay, Rüdiger, Haupt, Christian, Ambacher, Oliver
Broadband GaN-Based Switch-Mode Core MMICs with 20 W Output Power Operating at UHF
2011 - Cäsar, Markus, Dammann, Michael, Polyakov, Vladimir, Waltereit, Patrick, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
2011 Microelectronics Reliability, Elsevier BV, volume: 51, issue: 2, page: 224-228 - Schwarz, Stefan U., Linkohr, Stefanie, Lorenz, Pierre, Krischok, Stefan, Nakamura, Takako, Cimalla, Volker, Nebel, Christoph E., Ambacher, Oliver
DNA-sensor based on AlGaN/GaN high electron mobility transistor
2011 physica status solidi (a), Wiley, volume: 208, issue: 7, page: 1626-1629 - Diebold, Sebastian, Kallfass, Ingmar, Massler, Hermann, Seelmann-Eggebert, Matthias, Leuther, Arnulf, Tessmann, Axel, Pahl, Philipp, Koch, Stefan, Ambacher, Oliver
Design and model studies for solid-state power amplification at 210 GHz
2011 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 3, issue: 03, page: 339-346 - Haupt, Christian, Maroldt, Stephan, Quay, Rüdiger, Pletschen, Wilfried, Leuther, Arnulf, Ambacher, Oliver
Development of a high transconductance GaN MMIC technology for millimeter wave applications
2011 physica status solidi (c), Wiley, volume: 8, issue: 2, page: 297-299 - Moeller, Christian, Shokhovets, Sviatoslav, Gobsch, Gerhard, Köhler, Klaus, Ambacher, Oliver
Dielectric functions of wurtzite GaN at elevated temperatures
2011 Verhandlungen der Deutschen Physikalischen Gesellschaft - Quay, Rüdiger, Tessmann, Axel, Kiefer, Rudolf, Maroldt, Stephan, Haupt, Christian, Nowotny, U., Weber, Rainer, Massler, Hermann, Schwantuschke, Dirk, Seelmann-Eggebert, Matthias, Leuther, Arnulf, Mikulla, Michael, Ambacher, Oliver
Dual-Gate GaN MMICs for MM-Wave Operation
2011 IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 21, issue: 2, page: 95-97 - Knöbber, Fabian Andreas, Bludau, Oliver, Röhlig, Claus-Christian, Sah, Ram Ekwal, Williams, Oliver A., Kirste, Lutz, Leopold, Steffen, Pätz, Daniel, Cimalla, Volker, Ambacher, Oliver, Lebedev, Vadim
Dynamic characterization of thin aluminum nitride microstructures
2011 physica status solidi (c), Wiley, volume: 8, issue: 2, page: 479-481 - Cäsar, Markus, Dammann, Michael, Waltereit, Patrick, Bronner, Wolfgang, Baeumler, Martina, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Effect of chemical surface pre-treatment on reliability of AlGaN/GaN HEMTs
2011 - Köhler, Klaus, Müller, Stefan G., Waltereit, Patrick, Pletschen, Wilfried, Polyakov, Vladimir, Lim, Taek, Kirste, Lutz, Menner, H., Brückner, Peter, Ambacher, Oliver, Buchheim, Carsten, Goldhahn, Rüdiger
Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
2011 J Appl Phys, volume: 109, page: 1 - 5 - Lebedev, Vadim, Polyakov, Vladimir, Knübel, A., Aidam, Rolf, Kirste, Lutz, Cimalla, Volker, Granzner, Ralf, Schwierz, Frank, Ambacher, Oliver
Electron and hole accumulation in InN/InGaN heterostructures
2011 physica status solidi (c), Wiley, volume: 8, issue: 2, page: 485-487 - Lim, Taek, Waltereit, Patrick, Aidam, Rolf, Quay, Rüdiger, Kirste, Lutz, Brückner, Peter, Kiefer, Rudolf, Ambacher, Oliver
Fabrication of AlGaInN/GaN Transistors with ft and fmax Exceeding 100 GHz
2011 Minerals, Metals and Materials Society/AIME - Bronner, Wolfgang, Waltereit, Patrick, Müller, Stefan G., Dammann, Michael, Kiefer, Rudolf, Dennler, Philippe, Raay, Friedbert van, Mußer, Markus, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
From epitaxy to backside process: reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
2011 - Maroldt, Stephan, Quay, Rüdiger, Haupt, Christian, Kiefer, Rudolf, Wiegner, Dirk, Ambacher, Oliver
GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
2011 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 3, issue: 03, page: 319-327 - Mánuel, José M., Morales, Francisco M., Lozano, J. G., García, Rafael, Lim, Taek, Kirste, Lutz, Aidam, Rolf, Ambacher, Oliver
Growth and characterization of InAlN layers nearly lattice-matched to GaN
2011 physica status solidi (c), Wiley, volume: 8, issue: 7-8, page: 2500-2502 - Wang, Chunyu, Kirste, Lutz, Morales, Francisco M., Mánuel, José M., Röhlig, Claus-Christian, Köhler, Klaus, Cimalla, Volker, García, Rafael, Ambacher, Oliver
Growth mechanism and electronic properties of epitaxial In2O3 films on sapphire
2011 Journal of Applied Physics, AIP Publishing, volume: 110, issue: 9, page: 093712 - Lopez-Diaz, Daniel, Kallfass, Ingmar, Tessmann, Axel, Weber, Rainer, Massler, Hermann, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
High-performance 60 GHz MMICs for wireless digital communication in 100 nm mHEMT technology
2011 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 3, issue: 02, page: 107-113 - Mánuel, José M., Morales, Francisco M., García, Rafael, Lim, Taek, Kirste, Lutz, Aidam, Rolf, Ambacher, Oliver
Improved Structural and Chemical Properties of Nearly Lattice-Matched Ternary and Quaternary Barriers for GaN-Based HEMTs
2011 Crystal Growth & Design, American Chemical Society (ACS), volume: 11, issue: 6, page: 2588-2591 - Schuh, Patrick, Sledzik, Hardy, Oppermann, Martin, Quay, Rüdiger, Kühn, Jutta, Lim, Taek, Waltereit, Patrick, Mikulla, Michael, Ambacher, Oliver
InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
2011 - Driad, Rachid, Aidam, Rolf, Yang, Qi, Maier, Markus, Güllich, H., Schlechtweg, Michael, Ambacher, Oliver
InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice
2011 Applied Physics Letters, AIP Publishing, volume: 98, issue: 4, page: 043503 - Pletschen, Wilfried, Kiefer, Rudolf, Mueller, Stefan, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
2011 - Antes, Jochen, Lopez-Diaz, Daniel, Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Zwick, Thomas, Ambacher, Oliver, Kallfass, Ingmar
MMIC based wireless data transmission of a 12.5 Gbit/s signal using a 220 GHz carrier
2011 - Tessmann, Axel, Leuther, Arnulf, Hurm, Volker, Kallfass, Ingmar, Massler, Hermann, Kuri, Michael, Riessle, Markus, Zink, Martin, Loesch, Rainer, Seelmann-Eggebert, Matthias, Schlechtweg, Michael, Ambacher, Oliver
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz
2011 IEEE Journal of Solid-State Circuits, Institute of Electrical and Electronics Engineers (IEEE), volume: 46, issue: 10, page: 2193-2202 - Brueckner, Klemens, Niebelschuetz, Florentina, Tonisch, Katja, Foerster, Christian, Cimalla, Volker, Stephan, R., Pezoldt, Jörg, Stauden, Thomas, Ambacher, Oliver, Hein, M. A.
Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications
2011 physica status solidi (a), Wiley, volume: 208, issue: 2, page: 357-376 - Zhou, Lin, Kirste, Lutz, Lim, Taek, Aidam, Rolf, Ambacher, Oliver, Smith, David J.
Microstructural Characterization of Closely-Lattice-Matched AlIn(Ga)N Alloys for High Electron Mobility Transistors
2011 Microscopy and Microanalysis, Cambridge University Press (CUP), volume: 17, issue: S2, page: 1354-1355 - Schlechtweg, Michael, Tessmann, Axel, Kallfass, Ingmar, Leuther, Arnulf, Hurm, Volker, Massler, Hermann, Riessle, Markus, Losch, R., Ambacher, Oliver
Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications
2011 - Dennler, Philippe, Raay, Friedbert van, Seelmann-Eggebert, Matthias, Quay, Rüdiger, Ambacher, Oliver
Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
2011 - Rattunde, Marcel, Kaspar, Sebastian, Rösener, Benno, Töpper, Tino, Manz, Christian, Köhler, Klaus, Ambacher, Oliver, Wagner, Joachim
Narrow linewidth 2 µm GaSb-based semiconductor disk laser
2011 The European Conference on Lasers and Electro-Optics - Lim, Taek, Aidam, Rolf, Waltereit, Patrick, Quay, Rüdiger, Kirste, Lutz, Ambacher, Oliver
Optimized epitaxy of GaN-based HEMTs with quaternary barriers
2011 - Wang, Chunyu, Becker, Robert W., Passow, Thorsten, Pletschen, Wilfried, Köhler, Klaus, Cimalla, Volker, Ambacher, Oliver
Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air
2011 Sensors and Actuators B: Chemical, Elsevier BV, volume: 152, issue: 2, page: 235-240 - Kleemann, Marie-Elena, Shokhovets, Sviatoslav, Gobsch, Gerhard, Ambacher, Oliver
Polaritonic effects in wide-gap semiconductors as a function of temperature
2011 Verhandlungen der Deutschen Physikalischen Gesellschaft - Lim, Taek, Aidam, Rolf, Waltereit, Patrick, Pletschen, Wilfried, Quay, Rüdiger, Kirste, Lutz, Ambacher, Oliver
Quaternary barriers for improved performance of GaN-based HEMTs
2011 physica status solidi (c), Wiley, volume: 8, issue: 7-8, page: 2439-2441 - Dammann, Michael, Baeumler, Martina, Gütle, Frank, Cäsar, Markus, Walcher, Herbert, Waltereit, Patrick, Bronner, Wolfgang, Müller, Stefan G., Kiefer, Rudolf, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver, Graff, Andreas, Altmann, Frank, Simon, Michel
Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
2011 IEEE International Integrated Reliability Workshop Final Report, page: 42 - 46 - Reiner, Richard, Benkhelifa, Fouad, Krauße, Daniel, Quay, Rüdiger, Ambacher, Oliver
Simulation and analysis of low-resistance AlGaN/GaN HFET power switches
2011 - Kaspar, Sebastian, Rösener, Benno, Rattunde, Marcel, Topper, Tino, Manz, Christian, Köhler, Klaus, Ambacher, Oliver, Wagner, Joachim
Sub-MHz-Linewidth 200-mW Actively Stabilized 2.3-μm Semiconductor Disk Laser
2011 IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 23, issue: 20, page: 1538-1540 - Driad, Rachid, Benkhelifa, Fouad, Kirste, Lutz, Lösch, Rainer, Mikulla, Michael, Ambacher, Oliver
Surface passivation of InGaAs/InP HBTs using atomic layer deposited Al(2)O(3)
2011 - Antes, Jochen, Lopez-Diaz, Daniel, Schlechtweg, Michael, Diebold, Sebastian, Gulan, Heiko, Poprawa, F., Kurz, F., Henneberger, Ralf, Roppelt, E., Koenig, Swen, Leuthold, Juerg, Schneider, Thomas, Zwick, Thomas, Ambacher, Oliver, Kallfass, Ingmar
Systemkonzept und Realisierung einer Millimeterwellen-Richtfunkstrecke mit Datenraten über 12,5 Gbit/s
2011 - Lim, Taek, Ambacher, Oliver
Ternäre und quaternäre Barrierenmaterialien für nitridische Heterostruktur-Feldeffekttransistoren
2011, , - Leopold, Steffen, Pätz, Daniel, Knöbber, Fabian Andreas, Polster, Tobias, Ambacher, Oliver, Sinzinger, Stefan, Hoffmann, Martin
Tunable refractive beam steering using aluminum nitride thermal actuators
2011 MEMS Adaptive Optics V, volume: 7931, page: 79310B - Makon, Robert Elvis, Driad, Rachid, Rosenzweig, Josef, Hurm, Volker, Schubert, Colja, Walcher, Herbert, Schlechtweg, Michael, Ambacher, Oliver
Ultra-High-Speed Transmitter and Receiver ICs for 100 Gbit/s Ethernet Using InP DHBTs
2011 - Kallfass, Ingmar, Huelsmann, Axel, Tessmann, Axel, Leuther, Arnulf, Weissbrodt, Ernst, Schlechtweg, Michael, Ambacher, Oliver
W-band direct detection radiometers using metamorphic HEMT technology
2011 - Weissbrodt, Ernst, Kallfass, Ingmar, Hülsmann, Axel, Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Ambacher, Oliver
W-band radiometer system with switching front-end for multi-load calibration
2011 IEEE International Geoscience and Remote Sensing Symposium, page: 3843 - 3846
2010
- Makon, Robert Elvis, Driad, Rachid, Schubert, Colja, Fischer, J., Lösch, Rainer, Walcher, Herbert, Rosenzweig, Josef, Schlechtweg, Michael, Ambacher, Oliver
107-112 Gbit/s Fully Integrated CDR/1:2 DEMUX Using InP-Based DHBTs
2010 - Lopez-Diaz, Daniel, Kallfass, Ingmar, Tessmann, Axel, Massler, Hermann, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
A balanced resistive 210 GHz mixer with 50 GHz IF bandwidth
2010 - Linkohr, Stefanie, Schwarz, Stefan, Krischok, Stefan, Lorenz, Pierre, Cimalla, Volker, Nebel, Christoph E., Ambacher, Oliver
A novel bio-functionalization of AlGaN/GaN-ISFETs for DNA-sensors
2010 physica status solidi (c), Wiley, volume: 7, issue: 7-8, page: 1810-1813 - Linkohr, Stefanie, Schwarz, Stefan U., Krischok, Stefan, Lorenz, P., Polyakov, Vladimir, Cimalla, Volker, Nebel, Christoph E., Ambacher, Oliver
A novel functionalization of AlGaN/GaN-pH-Sensors for DNA-sensors Eine neuartige Funktionalisierung von AlGaN/GaN-pH-Sensoren für die DNA-Sensorik
2010 - Cimalla, Volker, Röhlig, Claus-Christian, Lebedev, Vadim, Ambacher, Oliver, Tonisch, Katja, Niebelschuetz, Florentina, Brueckner, Klemens, Hein, Matthias A.
AlGaN/GaN Based Heterostructures for MEMS and NEMS Applications
2010 Solid State Phenomena, Trans Tech Publications, volume: 159, page: 27-38 - Benkhelifa, Fouad, Krauße, Daniel, Müller, Stefan G., Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
AlGaN/GaN HEMTs for high voltage applications
2010 - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Kiefer, Rudolf, Pletschen, Wilfried, Müller, Stefan G., Aidam, Rolf, Menner, H., Kirste, Lutz, Köhler, Klaus, Mikulla, Michael, Ambacher, Oliver
AlGaN/GaN epitaxy and technology
2010 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 2, issue: 01, page: 3 - Knöbber, Fabian Andreas, Bludau, Oliver, Röhlig, Claus-Christian, Williams, Oliver A., Sah, Ram Ekwal, Kirste, Lutz, Cimalla, Volker, Lebedev, Vadim, Nebel, Christoph E., Ambacher, Oliver
Aluminum nitride and nanodiamond thin film microstructures
2010 Verhandlungen der Deutschen Physikalischen Gesellschaft - Bruch, Daniel, Kallfass, Ingmar, Aja Abelan, Beatriz, Leuther, Arnulf, Seelmann-Eggebert, Matthias, Massler, Hermann, Crocoll, E., Wünsch, S., Siegel, M., Schlechtweg, Michael, Ambacher, Oliver
Broadband MMIC Amplifier for superconducting single photon detector readout in a cryogenic environment
2010 - Wang, Chunyu, Cimalla, Volker, Ambacher, Oliver, Himmerlich, Marcel, Krischok, Stefan
Chapter 1: Photon stimulated ozone sensing
2010, , - Lim, Taek, Aidam, Rolf, Kirste, Lutz, Waltereit, Patrick, Quay, Rüdiger, Müller, Stefan G., Ambacher, Oliver
Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
2010 Applied Physics Letters, AIP Publishing, volume: 96, issue: 25, page: 252108 - Cäsar, Markus, Dammann, Michael, Polyakov, Vladimir, Waltereit, Patrick, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Critical Factors influencing the Voltage Robustness of AlGaN/GaN HEMTs
2010 - Kühn, Jutta, Mußer, Markus, Raay, Friedbert van, Kiefer, Rudolf, Seelmann-Eggebert, Matthias, Mikulla, Michael, Quay, Rüdiger, Rödle, Thomas, Ambacher, Oliver
Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
2010 International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), volume: 2, issue: 01, page: 115 - Lim, Taek, Aidam, Rolf, Kirste, Lutz, Waltereit, Patrick, Müller, Stefan G., Ambacher, Oliver
Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures
2010 physica status solidi (c), Wiley, volume: 7, issue: 7-8, page: 1958-1960 - Diebold, Sebastian, Kallfass, Ingmar, Massler, Hermann, Leuther, Arnulf, Tessmann, Axel, Pahl, Philipp, Koch, Sabine, Siegel, M., Ambacher, Oliver
Determination of suitable mHEMT transistor dimensioning for power amplification at 210 GHz by comprehensive measurements
2010 - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Müller, Stefan G., Köhler, Klaus, Mikulla, Michael, Ambacher, Oliver, Harm, L., Lorenzini, Martino, Rödle, Thomas, Riepe, Klaus J., Bellmann, K., Buchheim, Carsten, Goldhahn, Rüdiger
Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
2010 physica status solidi (c), Wiley, volume: 7, issue: 10, page: 2398-2403 - Knöbber, Fabian Andreas, Bludau, Oliver, Williams, Oliver A., Sah, Ram Ekwal, Kirste, Lutz, Baeumler, Martina, Leopold, Steffen, Pätz, D., Nebel, Christoph E., Ambacher, Oliver, Cimalla, Volker, Lebedev, Vadim, Ferro, Gabriel, Siffert, Paul
Diamond∕AlN Thin Films for Optical Applications
2010 - Maroldt, Stephan, Wiegner, Dirk, Vitanov, Stanislav, Palankovski, Vassil, Quay, Rüdiger, Ambacher, Oliver
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2GHz
2010 IEICE Transactions on Electronics, Institute of Electronics, Information and Communications Engineers (IEICE), volume: E93-C, issue: 8, page: 1238-1244 - Maier, Markus, Ambacher, Oliver
Effizienz von GaInN-Leuchtdioden: Struktur aktiver Schichten unter dem Einfluss substratinduzierter Defekte
2010, , - Röhlig, Claus-Christian, Niebelschutz, Merten, Brueckner, Klemens, Tonisch, Katja, Ambacher, Oliver, Cimalla, Volker
Elastic properties of nanowires
2010 physica status solidi (b), Wiley, volume: 247, issue: 10, page: 2557-2570 - Schwarz, Stefan U., Cimalla, Volker, Nebel, Christoph E., Ambacher, Oliver
Functionalization of AlGaN/GaN heterostructures with TFAAD
2010 Verhandlungen der Deutschen Physikalischen Gesellschaft - Mußer, Markus, Walcher, Herbert, Maier, Thomas, Quay, Rüdiger, Dammann, Michael, Mikulla, Michael, Ambacher, Oliver
GaN power FETs for next generation mobile communication systems
2010 - Lim, Taek, Aidam, Rolf, Waltereit, Patrick, Henkel, T., Quay, Rüdiger, Lozar, Roger, Maier, Thomas, Kirste, Lutz, Ambacher, Oliver
GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE
2010 IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), volume: 31, issue: 7, page: 671-673 - Kühn, Jutta, Waltereit, Patrick, Raay, Friedbert van, Aidam, Rolf, Quay, Rüdiger, Ambacher, Oliver, Thumm, Manfred
Harmonic termination of AlGaN/GaN/(Al)GaN single- and double-heterojunction HEMTs
2010 - Waltereit, Patrick, Bronner, Wolfgang, Kiefer, Rudolf, Quay, Rüdiger, Kühn, Jutta, Raay, Friedbert van, Dammann, Michael, Müller, Stefan G., Libal, C., Meier, T., Mikulla, Michael, Ambacher, Oliver
High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
2010 - Gwo, Shangir, Ager, Joel W., Ren, Fan, Ambacher, Oliver, Schowalter, Leo
III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions (MRS 1202)
2010, , - Polyakov, Vladimir, Cimalla, Volker, Lebedev, Vadim, Köhler, Klaus, Müller, Stefan G., Waltereit, Patrick, Ambacher, Oliver
Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1−xN/GaN heterostructures
2010 Applied Physics Letters, AIP Publishing, volume: 97, issue: 14, page: 142112 - Pletschen, Wilfried, Kiefer, Rudolf, Maroldt, Stephan, Müller, Stefan G., Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Influence of Dry Etch Conditions on the Performance of Recessed Gate GaN/AlGaN HEMTs
2010 - Kirste, Lutz, Menner, H., Bronner, Wolfgang, Leuther, Arnulf, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver, Granzner, Ralf, Schwierz, Frank, Buchheim, Carsten, Goldhahn, Rüdiger, , , , , , , , , ,
Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method : Einfluss des Oberflächenpotentials auf die elektrischen Eigenschaften von AlGaN/GaN Heterostrukturen mit verschiedenem Al-Gehalt: Auswirkung der Wachstumsmethode
2010 J Appl Phys, volume: 107, issue: 5, page: 1 - 5 - Köhler, Klaus, Müller, Stefan G., Aidam, Rolf, Waltereit, Patrick, Pletschen, Wilfried, Kirste, Lutz, Menner, H., Bronner, Wolfgang, Leuther, Arnulf, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver, Granzner, Ralf, Schwierz, Frank, Buchheim, Carsten, Goldhahn, Rüdiger
Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method
2010 Journal of Applied Physics, AIP Publishing, volume: 107, issue: 5, page: 053711 - Hülsmann, Axel, Tessmann, Axel, Leuther, Arnulf, Kallfass, Ingmar, Weissbrodt, Ernst, Knelangen, M., Schlechtweg, Michael, Ambacher, Oliver
Integrated circuits beyond 100 GHz for stand-off detection of concealed weapons
2010 - Maroldt, Stephan, Quay, Rüdiger, Haupt, Christian, Kiefer, Rudolf, Wiegner, Dirk, Ambacher, Oliver
Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
2010 - Baeumler, Martina, Gütle, Frank, Polyakov, Vladimir, Cäsar, Markus, Dammann, Michael, Konstanzer, Helmer, Pletschen, Wilfried, Bronner, Wolfgang, Quay, Rüdiger, Waltereit, Patrick, Mikulla, Michael, Ambacher, Oliver, Bourgeois, Franck, Behtash, Reza, Riepe, Klaus J., Wel, Paul J. van der, Klappe, Jos, Rödle, Thomas
Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
2010 Journal of Electronic Materials, Springer Nature, volume: 39, issue: 6, page: 756-760 - Hüning, F., Ambacher, Oliver, Guerra, A.
Kampf der Giganten : Siliziumkarbid versus Galliumnitrid
2010 elektronikJOURNAL, volume: 45, issue: 4a, page: 18 - 20 - Wang, Chunyu, Ambacher, Oliver
Metal organic chemical vapor deposition of indiumoxide for ozone sensing
2010, , - Leuther, Arnulf, Tessmann, Axel, Kallfass, Ingmar, Massler, Hermann, Loesch, R., Schlechtweg, Michael, Mikulla, Michael, Ambacher, Oliver
Metamorphic HEMT technology for submillimeter-wave MMIC applications
2010 - Lopez-Diaz, Daniel, Kallfass, Ingmar, Tessmann, Axel, Massler, Hermann, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
Monolithic integrated 210 GHz couplers for balanced mixers and image rejection mixers
2010 - Wang, Chunyu, Cimalla, Volker, Kunzer, Michael, Passow, Thorsten, Pletschen, Wilfried, Kappeler, Otmar, Wagner, Joachim, Ambacher, Oliver
Near-UV LEDs for integrated InO-based ozone sensors
2010 physica status solidi (c), Wiley, volume: 7, issue: 7-8, page: 2177-2179 - Niebelschuetz, Florentina, Brueckner, Klemens, Tonisch, Katja, Stephan, R., Cimalla, Volker, Ambacher, Oliver, Hein, M. A.
Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators
2010 physica status solidi (c), Wiley, volume: 7, issue: 7-8, page: 1829-1831 - Mánuel, José M., Morales, Francisco M., Lozano, J. G., González, D., García, Rafael, Lim, Taek, Kirste, Lutz, Aidam, Rolf, Ambacher, Oliver
Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
2010 Acta Materialia, Elsevier BV, volume: 58, issue: 12, page: 4120-4125 - Kirste, Lutz, Lim, Taek, Aidam, Rolf, Müller, Stefan G., Waltereit, Patrick, Ambacher, Oliver
Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures
2010 physica status solidi (a), Wiley, volume: 207, issue: 6, page: 1338-1341 - Lopez-Diaz, Daniel, Kallfass, Ingmar, Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
Subharmonically Pumped 210 GHz I/Q Mixers
2010 - Pätz, Daniel, Leopold, Steffen, Knöbber, Fabian Andreas, Sinzinger, Stefan, Hoffmann, Martin, Ambacher, Oliver
Tunable compound eye cameras
2010
2009
- Konkin, Alexander, Roth, Hans-Klaus, Scharff, Peter, Aganov, Albert, Ambacher, Oliver, Sensfuss, Steffi
-band ESR studies of structural anisotropy in P3HT and P3HT/PCBM blend polymer solid films: Paramagnetic defects after continuous wave Xe-lamp photolysis
2009 Solid State Communications, Elsevier BV, volume: 149, issue: 21-22, page: 893-897 - Kallfass, Ingmar, Tessmann, Axel, Massler, Hermann, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
A 200 GHz active heterodyne receiver MMIC with low sub-harmonic LO power requirements for imaging frontends
2009 European Microwave Integrated Circuits Conference (EuMIC), page: 45 - 48 - Kallfass, Ingmar, Tessmann, Axel, Massler, Hermann, Lopez-Diaz, Daniel, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
A 300 GHz active frequency-doubler and integrated resistive mixer MMIC
2009 European Microwave Integrated Circuits Conference (EuMIC), page: 200 - 203 - Tessmann, Axel, Leuther, Arnulf, Hurm, Volker, Massler, Hermann, Zink, Martin, Kuri, Michael, Riessle, Markus, Loesch, Rainer, Schlechtweg, Michael, Ambacher, Oliver
A 300 GHz mHEMT amplifier module
2009 IEEE International Conference on Indium Phosphide & Related Materials, page: 169 - 199 - Hülsmann, Axel, Liebelt, Andreas, Tessmann, Axel, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
Active millimeter-wave imaging using a raster scanner
2009 Radar Sensor Technology XIII, volume: 7308 - Chartier, Sébastien, Tessmann, Axel, Leuther, Arnulf, Weber, Rainer, Kallfass, Ingmar, Schlechtweg, Michael, Stanko, Stephan, Essen, Helmut, Ambacher, Oliver
Advanced mHEMT MMICs for 220 GHz high-resolution imaging systems
2009 physica status solidi (c), Wiley, volume: 6, issue: 6, page: 1390-1393 - Hülsmann, Axel, Leuther, Arnulf, Kallfass, Ingmar, Weber, Rainer, Tessmann, Axel, Schlechtweg, Michael, Ambacher, Oliver
Advanced mHEMT technologies for space applications
2009 the Proceedings of the 20th International Symposium on Space Terahertz Technology, page: 178 - 182 - King, Phil D. C., Veal, Tim D., Fuchs, Frank, Wang, Chunyu, Payne, David J., Bourlange, Anne, Zhang, H., Bell, Gavin R., Cimalla, Volker, Ambacher, Oliver, Egdell, Russell G., Bechstedt, Friedhelm, McConville, Christopher F.
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3
2009 Physical Review B, American Physical Society (APS), volume: 79, issue: 20 - Pettinari, Giorgio, Polimeni, Antonio, Capizzi, Mario, Blokland, J. H., Christianen, P. C. M., Maan, Jan Cornelius, Lebedev, Vadim, Cimalla, Volker, Ambacher, Oliver
Carrier mass measurements in degenerate indium nitride
2009 Physical Review B, American Physical Society (APS), volume: 79, issue: 16 - Kolaklieva, Lilyana, Kakanakov, Roumen, Stefanov, Plamen, Cimalla, Volker, Maroldt, Stephan, Ambacher, Oliver, Tonisch, Katja, Niebelschuetz, Florentina
Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions
2009 Materials Science Forum, Trans Tech Publications, Ltd., volume: 615-617, page: 951-954 - Kühn, Jutta, Raay, Friedbert van, Quay, Rüdiger, Kiefer, Rudolf, Peschel, Detlef, Mikulla, Michael, Seelmann-Eggebert, Matthias, Bronner, Wolfgang, Schlechtweg, Michael, Ambacher, Oliver, Thumm, Manfred
Design of X-band GaN MMICs using field plates
2009 European Microwave Integrated Circuits Conference (EuMIC), page: 33 - 36 - Kühn, Jutta, Raay, Friedbert van, Quay, Rüdiger, Kiefer, Rudolf, Maier, Thomas, Stibal, R., Mikulla, Michael, Seelmann-Eggebert, Matthias, Bronner, Wolfgang, Schlechtweg, Michael, Ambacher, Oliver, Thumm, Manfred
Design of highly-efficient GaN X-band-power-amplifier MMICs
2009 IEEE MTT-S International Microwave Symposium Digest, page: 661 - 664 - Morales, Francisco M., González, David, Lozano, J. G., García, Rafael, Hauguth-Frank, Sindy, Lebedev, Vadim, Cimalla, Volker, Ambacher, Oliver
Determination of the composition of InxGa1−xN from strain measurements
2009 Acta Materialia, Elsevier BV, volume: 57, issue: 19, page: 5681-5692 - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Müller, Stefan G., Mußer, Markus, Mikulla, Michael, Ambacher, Oliver, Rijs, Fred van, Rödle, Thomas, Riepe, Klaus J.
Development of AlGaN/GaN HEMTs with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
2009 physica status solidi (c), Wiley, volume: 6, issue: 6, page: 1369-1372 - Kühn, Jutta, Raay, Friedbert van, Quay, Rüdiger, Kiefer, Rudolf, Mikulla, Michael, Seelmann-Eggebert, Matthias, Bronner, Wolfgang, Schlechtweg, Michael, Ambacher, Oliver, Thumm, Manfred
Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency
2009 Journal of Infrared, Millimeter, and Terahertz Waves, Springer Nature - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Kiefer, Rudolf, Müller, Stefan G., Mußer, Markus, Kühn, Jutta, Raay, Friedbert van, Seelmann-Eggebert, Matthias, Mikulla, Michael, Ambacher, Oliver, Rijs, Fred van, Rödle, Thomas, Riepe, Klaus J.
GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability
2009 physica status solidi (a), Wiley, volume: 206, issue: 6, page: 1215-1220 - Quay, Rüdiger, Mikulla, Michael, Waltereit, Patrick, Raay, Friedbert van, Dammann, Michael, Kühn, Jutta, Ambacher, Oliver, Schuh, Patrick
Gallium nitride MMICs for future reconnaissance and imaging applications
2009 - Maroldt, Stephan, Haupt, Christian, Pletschen, Wilfried, Müller, Stefan G., Quay, Rüdiger, Ambacher, Oliver, Schippel, Christian, Schwierz, Frank
Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
2009 Japanese Journal of Applied Physics, IOP Publishing, volume: 48, issue: 4, page: 04C083 - Maroldt, Stephan, Haupt, Christian, Kiefer, Rudolf, Bronner, Wolfgang, Müller, Stefan G., Benz, W., Quay, Rüdiger, Ambacher, Oliver
High Efficiency Digital GaN MMIC Power Amplifiers for Future Switch-Mode Based Mobile Communication Systems
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, page: 1 - 4 - Waltereit, Patrick, Müller, Stefan G., Bellmann, K., Buchheim, Carsten, Goldhahn, Rüdiger, Köhler, Klaus, Kirste, Lutz, Baeumler, Martina, Dammann, Michael, Bronner, Wolfgang, Quay, Rüdiger, Ambacher, Oliver
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
2009 Journal of Applied Physics, AIP Publishing, volume: 106, issue: 2, page: 023535 - Grandal, Javier, Sanchez-Garcia, M. A., Calleja, Enrique, Lazic, S., Gallardo, E., Calleja, Jose L., Luna, E., Trampert, A., Niebelschutz, Merten, Cimalla, Volker, Ambacher, Oliver
InN Nanocolumns
2009, , - Makon, Robert Elvis, Driad, Rachid, Lösch, Rainer, Rosenzweig, Josef, Schlechtweg, Michael, Ambacher, Oliver
InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s
2009 Electronics Letters, Institution of Engineering and Technology (IET), volume: 45, issue: 25, page: 1340 - Quay, Rüdiger, Raay, Friedbert van, Kühn, J., Kiefer, R., Waltereit, Patrick, Mußer, Markus, Maroldt, Stephan, Dammann, Michael, Mikulla, Michael, Ambacher, Oliver
L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
2009 - Schlechtweg, Michael, Tessmann, Axel, Kallfass, Ingmar, Leuther, Arnulf, Weber, Rainer, Chartier, Sébastien, Driad, Rachid, Makon, Robert Elvis, Hurm, Volker, Seelmann-Eggebert, Matthias, Massler, Hermann, Kuri, Michael, Riessle, Markus, Zink, Martin, Benkhelifa, Fouad, Loesch, Rainer, Rosenzweig, Josef, Ambacher, Oliver
MMICs and Mixed-Signal ICs Based on III/V Technology for Highest Frequencies and Data Rates
2009 Frequenz, Walter de Gruyter GmbH, volume: 63, issue: 5-6 - Leuther, Arnulf, Tessmann, Axel, Kallfass, Ingmar, Loesch, Rainer, Seelmann-Eggebert, Matthias, Wadefalk, Niklas, Schäfer, Frank K., Gallego Puyol, Juan Daniel, Schlechtweg, Michael, Mikulla, Michael, Ambacher, Oliver
Metamorphic HEMT technology for low-noise applications
2009 IEEE International Conference on Indium Phosphide & Related Materials, page: 188 - 191 - Kallfass, Ingmar, Tessmann, Axel, Leuther, Arnulf, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
Millimeter-wave monolithic integrated circuits for imaging and remote sensing at 140, 200, and 300 GHz
2009 Millimetre Wave and Terahertz Sensors and Technology II, volume: 7485 - Shokhovets, Sviatoslav, Köhler, Klaus, Ambacher, Oliver, Gobsch, Gerhard
Observation of Fermi-edge excitons and exciton-phonon complexes in the optical response of heavily dopedn-type wurtzite GaN
2009 Physical Review B, American Physical Society (APS), volume: 79, issue: 4 - Dammann, Michael, Pletschen, Wilfried, Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Mueller, Stefan, Mikulla, Michael, Ambacher, Oliver, Wel, Paul J. van der, Murad, Saad K., Rödle, Thomas, Behtash, Reza, Bourgeois, Franck, Riepe, Klaus J., Fagerlind, Martin, Sveinbjörnsson, Einar Ö.
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
2009 Microelectronics reliability, Elsevier BV, volume: 49, issue: 5, page: 474-477 - Dammann, Michael, Cäsar, Markus, Waltereit, Patrick, Bronner, Wolfgang, Konstanzer, Helmer, Quay, Rüdiger, Müller, Stefan G., Mikulla, Michael, Ambacher, Oliver, Wel, Paul J. van der, Rödle, Thomas, Behtash, Reza, Bourgeois, Franck, Riepe, Klaus J.
Reliability of AlGaN/GaN HEMTs under DC-and RF-operation
2009 Reliability of Compound Semiconductors Digest (ROCS), page: 19 - 32 - Brueckner, Klemens, Niebelschuetz, Florentina, Tonisch, Katja, Stephan, Ralf, Cimalla, Volker, Ambacher, Oliver, Hein, Matthias A.
Resonant Piezoelectric ALGaN/GaN MEMS Sensors in Longitudinal Mode Operation
2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems, page: 927 - 930 - Gebinoga, Michael, Cimalla, Irina, Silveira, Liele, Klett, Maren, Lebedev, Vadim, Niebelschuetz, Florentina, Ambacher, Oliver, Schober, Andreas
Response of Nerve Cell to Inhibitor Recorded by Aluminium-Gallium-Nitride FET
2009, Sensors for environment, health and security, page: 311 - 318, - Cimalla, Volker, Lebedev, Vadim, Ambacher, Oliver, Polyakov, Vladimir, Schwierz, Frank, Niebelschutz, Merten, Ecke, Gernot, Myers, T., Schaff, W.
Transport Properties of InN
2009, , - Schilling, Christian, Ostendorf, Ralf, Kaufel, Gudrun, Moritz, Rudolf, Wagner, Joachim, Ambacher, Oliver
Tunable GaAs-based high power tapered amplifiers in an external cavity setup
2009 CLEO/Europe-EQEC 2009-European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference
2008
- Wagner, Joachim, Wang, Chunyu, Röhlig, Claus-Christian, Maier, Markus, Kunzer, Michael, Passow, Thorsten, Schirmacher, Wilhelm, Pletschen, Wilfried, Cimalla, Volker, Köhler, Klaus, Ambacher, Oliver
(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors
2008 Light-Emitting Diodes: Research, Manufacturing, and Applications XII, volume: 6910 - Ostendorf, Ralf, Kaufel, Gudrun, Moritz, Rudolf, Mikulla, Michael, Ambacher, Oliver, Kelemen, M. T., Gilly, J.
10 W high-efficiency high-brightness tapered diode lasers at 976 nm
2008 High-Power Diode Laser Technology and Applications VI, volume: 6876 - Leuther, Arnulf, Tessmann, Axel, Massler, Hermann, Loesch, Rainer, Schlechtweg, Michael, Mikulla, Michael, Ambacher, Oliver
35 nm metamorphic HEMT MMIC technology
2008 20th International Conference on Indium Phosphide and Related Materials, page: 1 - 4 - Lübbers, Benedikt, Kittler, G., Ort, P., Linkohr, Stefanie, Wegener, D., Baur, Barbara, Gebinoga, Michael, Weise, Frank, Eickhoff, Martin, Maroldt, Stephan, Schober, Andreas, Ambacher, Oliver
A novel GaN-based multiparameter sensor system for biochemical analysis
2008 physica status solidi (c), Wiley, volume: 5, issue: 6, page: 2361-2363 - Niebelschuetz, Florentina, Cimalla, Volker, Tonisch, Katja, Haupt, Christian, Brueckner, Klemens, Stephan, Ralf, Hein, Matthias A., Ambacher, Oliver
AlGaN/GaN-based MEMS with two-dimensional electron gas for novel sensor applications
2008 physica status solidi (c), Wiley, volume: 5, issue: 6, page: 1914-1916 - Shokhovets, Sviatoslav, Ambacher, Oliver, Meyer, Bruno K., Gobsch, Gerhard
Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors
2008 Physical Review B, American Physical Society (APS), volume: 78, issue: 3 - Kühn, Jutta, Raay, Friedbert van, Quay, Rüdiger, Kiefer, Rudolf, Bronner, Wolfgang, Seelmann-Eggebert, Matthias, Schlechtweg, Michael, Mikulla, Michael, Ambacher, Oliver, Thumm, Manfred
Balanced Microstrip AlGaN/GaN HEMT Power Amplifier MMIC for X-Band Applications
2008 European Microwave Integrated Circuit Conference, page: 95 - 98 - Lorenz, P., Lebedev, Vadim, Niebelschuetz, Florentina, Hauguth-Frank, Sindy, Ambacher, Oliver, Schäfer, Jürgen A., Krischok, Stefan
Characterization of GaN-based lateral polarity heterostructures
2008 physica status solidi (c), Wiley, volume: 5, issue: 6, page: 1965-1967 - Voigt, St., Zhokhavets, Uladzimir, Al-Ibrahim, Maher, Hoppe, Harald, Ambacher, Oliver, Gobsch, Gerhard
Dynamical optical investigation of polymer/fullerene composite solar cells
2008 physica status solidi (b), Wiley, volume: 245, issue: 4, page: 714-719 - Quay, Rüdiger, Raay, Friedbert van, Kühn, Jutta, Kiefer, Rudolf, Waltereit, Patrick, Zorcic, M., Mußer, Markus, Bronner, Wolfgang, Dammann, Michael, Seelmann-Eggebert, Matthias, Schlechtweg, Michael, Mikulla, Michael, Ambacher, Oliver, Thorpe, J., Riepe, Klaus J., Rijs, Fred van, Saad, M., Harm, L., Rödle, Thomas
Efficient AlGaN/GaN HEMT Power Amplifiers
2008 European Microwave Integrated Circuit Conference, page: 87 - 90 - Buchheim, Carsten, Goldhahn, Rüdiger, Gobsch, Gerhard, Tonisch, Katja, Cimalla, Volker, Niebelschuetz, Florentina, Ambacher, Oliver
Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas
2008 Applied Physics Letters, AIP Publishing, volume: 92, issue: 1, page: 013510 - Wang, Chunyu, Cimalla, Volker, Kups, Thomas, Ambacher, Oliver, Himmerlich, Marcel, Krischok, Stefan
Electrical and optical properties of In2O3 nanoparticles prepared by MOCVD
2008 2nd IEEE International Nanoelectronics Conference, page: 489 - 492 - Lebedev, Vadim, Wang, Chunyu, Hauguth-Frank, Sindy, Polyakov, Vladimir, Schwierz, Frank, Cimalla, Volker, Kups, Thomas, Morales, Francisco M., Lozano, J. G., González, David, Himmerlich, Marcel, Schäfer, Jürgen A., Krischok, Stefan, Ambacher, Oliver
Electron transport properties of indium oxide – indium nitride metal-oxide-semiconductor heterostructures
2008 physica status solidi (c), Wiley, volume: 5, issue: 2, page: 495-498 - Lebedev, Vadim, Polyakov, Vladimir, Hauguth-Frank, Sindy, Cimalla, Volker, Wang, Chunyu, Ecke, Gernot, Schwierz, Frank, Schober, Andreas, Lozano, J. G., Morales, Francisco M., González, David, Ambacher, Oliver
Electronic and photoconductive properties of ultrathin InGaN photodetectors
2008 Journal of Applied Physics, AIP Publishing, volume: 103, issue: 7, page: 073715 - Kallfass, Ingmar, Tessmann, Axel, Leuther, Arnulf, Kuri, Michael, Riessle, Markus, Zink, Martin, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
Enabling compact MMIC-based frontends for millimeter-wave imaging radar and radiometry at 94 and 210 GHz
2008 Millimetre Wave and Terahertz Sensors and Technology, volume: 7117 - Pettinari, Giorgio, Masia, Francesco, Capizzi, Mario, Polimeni, Antonio, Losurdo, M., Bruno, G., Kim, Haesook T., Choi, S., Brown, April S., Lebedev, Vadim, Cimalla, Volker, Ambacher, Oliver
Experimental evidence of different hydrogen donors inn-type InN
2008 Physical Review B, American Physical Society (APS), volume: 77, issue: 12 - Matthäus, Gabor, Cimalla, Volker, Pradarutti, Boris, Riehemann, Stefan, Notni, Günther, Lebedev, Vadim, Ambacher, Oliver, Nolte, Sandra, Tünnermann, Andreas
Highly efficient THz emission from differently grown InN at 800nm and 1060nm excitation
2008 Optics Communications, Elsevier BV, volume: 281, issue: 14, page: 3776-3780 - Wang, Chunyu, Cimalla, Volker, Lebedev, Vadim, Kups, Thomas, Ecke, Gernot, Hauguth-Frank, Sindy, Ambacher, Oliver, Lozano, J. G., Morales, Francisco M., González, David
InN/In2O3 heterostructures
2008 physica status solidi (c), Wiley, volume: 5, issue: 6, page: 1627-1629 - Jebril, Seid, Elbahri, Mady, Titazu, Getachew, Subannajui, Kittitat, Essa, Samia, Niebelschuetz, Florentina, Röhlig, Claus-Christian, Cimalla, Volker, Ambacher, Oliver, Schmidt, Bernd, Kabiraj, Debdulal, Avasti, Devesh, Adelung, Rainer
Integration of Thin-Film-Fracture-Based Nanowires into Microchip Fabrication
2008 Small, Wiley, volume: 4, issue: 12, page: 2214-2221 - Niebelschuetz, Florentina, Pezoldt, Jörg, Stauden, Thomas, Cimalla, Volker, Tonisch, Katja, Brueckner, Klemens, Hein, Matthias A., Ambacher, Oliver, Schober, Andreas
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication
2008 Conference on Optoelectronic and Microelectronic Materials and Devices, page: 26 - 29 - Tessmann, Axel, Kallfass, Ingmar, Leuther, Arnulf, Massler, Hermann, Kuri, Michael, Riessle, Markus, Zink, Martin, Sommer, Rainer, Wahlen, Alfred, Essen, Helmut, Hurm, Volker, Schlechtweg, Michael, Ambacher, Oliver
Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar
2008 IEEE Journal of Solid-State Circuits, Institute of Electrical and Electronics Engineers (IEEE), volume: 43, issue: 10, page: 2194-2205 - Tessmann, Axel, Kallfass, Ingmar, Leuther, Arnulf, Massler, Hermann, Schlechtweg, Michael, Ambacher, Oliver
Metamorphic MMICs for Operation Beyond 200 GHz
2008 European Microwave Integrated Circuit Conference, page: 210 - 213 - Konkin, Alexander, Wendler, Frank, Meister, Frank, Roth, Hans-Klaus, Aganov, Albert, Ambacher, Oliver
N-Methylmorpholine-N-oxide ring cleavage registration by ESR under heating conditions of the Lyocell process
2008 Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, Elsevier BV, volume: 69, issue: 3, page: 1053-1055 - Wang, Chunyu, Ali, Majdeddin, Kups, Thomas, Röhlig, Claus-Christian, Cimalla, Volker, Stauden, Thomas, Ambacher, Oliver
NOx sensing properties of In2O3 nanoparticles prepared by metal organic chemical vapor deposition
2008 Sensors and Actuators B: Chemical, Elsevier BV, volume: 130, issue: 2, page: 589-593 - Ali, Majdeddin, Wang, Chunyu, Röhlig, Claus-Christian, Cimalla, Volker, Stauden, Thomas, Ambacher, Oliver
NOx sensing properties of In2O3 thin films grown by MOCVD
2008 Sensors and Actuators B: Chemical, Elsevier BV, volume: 129, issue: 1, page: 467-472 - Cimalla, Volker, Röhlig, Claus-Christian, Pezoldt, Jörg, Niebelschutz, Merten, Ambacher, Oliver, Brueckner, Klemens, Hein, Matthias A., Weber, Jochen, Milenkovic, Srdjan, Smith, Andrew Jonathan, Hassel, Achim Walter
Nanomechanics of Single Crystalline Tungsten Nanowires
2008 Journal of Nanomaterials, Hindawi Limited, volume: 2008, page: 1-9 - Hauguth-Frank, Sindy, Lebedev, Vadim, Mauder, Christof, Niebelschuetz, Florentina, Büchner, Hans-Joachim, Jäger, Gerd, Ambacher, Oliver
Novel III-nitride based transparent photodetectors for standing wave interferometry
2008 physica status solidi (a), Wiley, volume: 205, issue: 8, page: 2080-2084 - Ecke, Gernot, Wang, Chunyu, Cimalla, Volker, Ambacher, Oliver
Ozone and UV assisted oxidation of InN surfaces
2008 physica status solidi (c), Wiley, volume: 5, issue: 6, page: 1603-1605 - Wang, Chunyu, Dai, Y., Pezoldt, Jörg, Lu, Bao, Kups, Thomas, Cimalla, Volker, Ambacher, Oliver
Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide
2008 Crystal Growth & Design, American Chemical Society (ACS), volume: 8, issue: 4, page: 1257-1260 - Tonisch, Katja, Buchheim, Carsten, Niebelschuetz, Florentina, Schober, Andreas, Gobsch, Gerhard, Cimalla, Volker, Ambacher, Oliver, Goldhahn, Rüdiger
Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
2008 Journal of Applied Physics, AIP Publishing, volume: 104, issue: 8, page: 084516 - Tonisch, Katja, Buchheim, Carsten, Niebelschuetz, Florentina, Donahue, Mary, Goldhahn, Rüdiger, Cimalla, Volker, Ambacher, Oliver
Piezoelectric actuation of all-nitride MEMS
2008 physica status solidi (c), Wiley, volume: 5, issue: 6, page: 1910-1913 - Ambacher, Oliver, Cimalla, Volker
Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors
2008, Polarization Effects in Semiconductors, page: 27 - 109, - Dammann, Michael, Pletschen, Wilfried, Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Mueller, Stefan, Mikulla, Michael, Ambacher, Oliver, Wel, Paul J. van der, Murad, Saad K., Rödle, Thomas, Behtash, Reza, Bourgeois, Franck, Riepe, Klaus J., Fagerlind, Martin, Sveinbjörnsson, Einar Ö.
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
2008 - Hofmann, Meike, Hauguth-Frank, Sindy, Lebedev, Vadim, Ambacher, Oliver, Sinzinger, Stefan
Sapphire-GaN-based planar integrated free-space optical system
2008 Applied Optics, The Optical Society, volume: 47, issue: 16, page: 2950 - Niebelschutz, Merten, Cimalla, Volker, Ambacher, Oliver, Machleidt, Torsten, Franke, Karl-Heinz, Ristić, Jelena, Grandal, Javier, Sanchez-Garcia, M. A., Calleja, Enrique
Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy
2008 physica status solidi (c), Wiley, volume: 5, issue: 6, page: 1609-1611 - Hauguth-Frank, Sindy, Lebedev, Vadim, Tonisch, Katja, Romanus, Henry, Kups, Thomas, Büchner, Hans-Joachim, Jäger, Gerd, Ambacher, Oliver, Schober, Andreas
Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures
2008 MRS Proceedings, Cambridge University Press (CUP), volume: 1076 - Morales, Francisco M., Lozano, J. G., García, Rafael, Lebedev, Vadim, Wang, Chunyu, Cimalla, Volker, Ambacher, Oliver, González, David
Structure of cubic polytype indium nitride layers on top of modified sapphire substrates
2008 physica status solidi (c), Wiley, volume: 5, issue: 2, page: 514-517 - Morales, Francisco M., Lozano, J. G., García, Rafael, Lebedev, Vadim, Hauguth-Frank, Sindy, Cimalla, Volker, Ambacher, Oliver, González, David
Study of microstructure and strain relaxation on thin InXGa1−xN epilayers with medium and high In contents
2008, 14th European Microscopy Congress, page: 77 - 78, - Konkin, Alexander, Sensfuss, Steffi, Roth, Hans-Klaus, Scharff, Peter, Ambacher, Oliver, Aganov, Albert, Schroedner, Mario
TRESR study of the photo-induced electron transfer in P3DDT/maleic anhydride blend in THF solution under UV flash photolysis
2008 Journal of Molecular Liquids, Elsevier BV, volume: 141, issue: 1-2, page: 54-61 - Kolaklieva, Lilyana, Kakanakov, Roumen, Cimalla, Volker, Maroldt, Stephan, Niebelschuetz, Florentina, Tonisch, Katja, Ambacher, Oliver
The role of Ti/A1 ratio in nanolayered ohmic contacts for GaN/AlGaN HEMTs
2008 26th International Conference on Microelectronics, page: 221 - 224 - Brueckner, Klemens, Niebelschuetz, Florentina, Tonisch, Katja, Michael, S., Dadgar, Armin, Krost, Alois, Cimalla, Volker, Ambacher, Oliver, Stephan, Ralf, Hein, Matthias A.
Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
2008 Applied Physics Letters, AIP Publishing, volume: 93, issue: 17, page: 173504 - Hauguth-Frank, Sindy, Lebedev, Vadim, Büchner, Hans-Joachim, Jäger, Gerd, Ambacher, Oliver
Ultra-thin InGaN photodetectors for standing wave interferometry
2008 physica status solidi (c), Wiley, volume: 5, issue: 6, page: 2117-2119
2007
- Cimalla, Volker, Will, Florentina, Tonisch, Katja, Niebelschutz, Merten, Lebedev, Vadim, Kittler, G., Himmerlich, Marcel, Krischok, Stefan, Schäfer, Jürgen A., Gebinoga, Michael, Schober, Andreas, Friedrich, Thomas, Ambacher, Oliver
AlGaN/GaN biosensor—effect of device processing steps on the surface properties and biocompatibility
2007 Sensors and Actuators B: Chemical, Elsevier BV, volume: 123, issue: 2, page: 740-748 - Cimalla, Volker, Machleidt, Torsten, Spiess, Lothar, Gubisch, Martin, Hotovy, Ivan, Romanus, Henry, Ambacher, Oliver
Analysis of nanocrystalline films on rough substrates
2007 Ultramicroscopy, Elsevier BV, volume: 107, issue: 10-11, page: 989-994 - Ecke, Gernot, Cimalla, Volker, Tonisch, Katja, Lebedev, Vadim, Romanus, Henry, Ambacher, Oliver, Liday, Jozef
Analysis of nanostructures by means of Auger electron spectroscopy
2007 Journal of Electrical Engineering, volume: 58, issue: 6 - Lebedev, Vadim, Tonisch, Katja, Niebelschuetz, Florentina, Cimalla, Volker, Cengher, D., Mauder, Christof, Hauguth-Frank, Sindy, Ambacher, Oliver, Morales, Francisco M., Lozano, J. G., González, David
Coalescence aspects of III-nitride epitaxy
2007 Journal of Applied Physics, AIP Publishing, volume: 101, issue: 5, page: 054906 - Shokhovets, Sviatoslav, Ambacher, Oliver, Gobsch, Gerhard
Conduction-band dispersion relation and electron effective mass in III-V and II-VI zinc-blende semiconductors
2007 Physical Review B, American Physical Society (APS), volume: 76, issue: 12 - Lozano, J. G., Morales, Francisco M., García, Rafael, González, David, Lebedev, Vadim, Wang, Chunyu, Cimalla, Volker, Ambacher, Oliver
Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer
2007 Applied Physics Letters, AIP Publishing, volume: 90, issue: 9, page: 091901 - Konkin, Alexander, Wendler, Frank, Meister, Frank, Roth, Hans-Klaus, Aganov, Albert, Ambacher, Oliver
Degradation processes in the cellulose/N-methylmorpholine-N-oxide system studied by HPLC and ESR. Radical formation/recombination kinetics under UV photolysis at 77 K
2007 Cellulose, Springer Science and Business Media LLC, volume: 14, issue: 5, page: 457-468 - Schley, Pascal, Goldhahn, Rüdiger, Winzer, A. T., Gobsch, Gerhard, Cimalla, Volker, Ambacher, Oliver, Lu, Haiyan, Schaff, William J., Kurouchi, M., Nanishi, Yasushi, Rakel, M., Cobet, Christoph, Esser, Norbert
Dielectric function and Van Hove singularities for In-richInxGa1−xNalloys: Comparison of N- and metal-face materials
2007 Physical Review B, American Physical Society (APS), volume: 75, issue: 20 - Lebedev, Vadim, Cimalla, Volker, Morales, Francisco M., Lozano, J. G., González, David, Mauder, Christof, Ambacher, Oliver
Effect of island coalescence on structural and electrical properties of InN thin films
2007 Journal of Crystal Growth, Elsevier BV, volume: 300, issue: 1, page: 50-56 - Lebedev, Vadim, Wang, Chunyu, Cimalla, Volker, Hauguth-Frank, Sindy, Kups, Thomas, Ali, Majdeddin, Ecke, Gernot, Himmerlich, Marcel, Krischok, Stefan, Schäfer, Jürgen A., Ambacher, Oliver, Polyakov, Vladimir, Schwierz, Frank
Effect of surface oxidation on electron transport in InN thin films
2007 Journal of Applied Physics, AIP Publishing, volume: 101, issue: 12, page: 123705 - Niebelschutz, Merten, Cimalla, Volker, Ambacher, Oliver, Machleidt, Torsten, Ristić, Jelena, Calleja, Enrique
Electrical performance of gallium nitride nanocolumns
2007 Physica E: Low-dimensional Systems and Nanostructures, Elsevier BV, volume: 37, issue: 1-2, page: 200-203 - Niebelschutz, Merten, Cimalla, Volker, Ambacher, Oliver, Machleidt, Torsten, Franke, Karl-Heinz, Ristić, Jelena, Grandal, Javier, Sanchez-Garcia, M. A., Calleja, Enrique
Electrically characterization of Group III-Nitride nanocolumns with Scanning Force Microscopy
2007 Modern Research and Educational Topics in Microscopy - Lozano, J. G., Morales, Francisco M., García, Rafael, Lebedev, Vadim, Cimalla, Volker, Ambacher, Oliver, González, David
Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers
2007 physica status solidi (c), Wiley, volume: 4, issue: 4, page: 1454-1457 - Calleja, Enrique, Grandal, Javier, Sanchez-Garcia, M. A., Niebelschutz, Merten, Cimalla, Volker, Ambacher, Oliver
Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns
2007 Applied Physics Letters, AIP Publishing, volume: 90, issue: 26, page: 262110 - Pezoldt, Jörg, Foerster, Christian, Cimalla, Volker, Will, Florentina, Stephan, Ralf, Brueckner, Klemens, Hein, Matthias A., Ambacher, Oliver
FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
2007 Materials Science Forum, Trans Tech Publications, Ltd., volume: 556-557, page: 363-366 - Lebedev, Vadim, Cengher, D., Fischer, Michael, Tonisch, Katja, Cimalla, Volker, Niebelschutz, Merten, Ambacher, Oliver
Fabrication of one-dimensional “trenched” GaN nanowires and their interconnections
2007 physica status solidi (a), Wiley, volume: 204, issue: 10, page: 3387-3391 - Somogyi, A., Martinez-Criado, Gema, Homs, A., Hernandez-Fenollosa, M. A., Vantelon, D., Ambacher, Oliver
Formation of Si clusters in AlGaN: A study of local structure
2007 Applied Physics Letters, AIP Publishing, volume: 90, issue: 18, page: 181129 - Tonisch, Katja, Cimalla, Volker, Niebelschuetz, Florentina, Romanus, Henry, Eickhoff, Martin, Ambacher, Oliver
Fully unstrained GaN on sacrificial AlN layers by nano-heteroepitaxy
2007 physica status solidi (c), Wiley, volume: 4, issue: 7, page: 2248-2251 - Brueckner, Klemens, Cimalla, Volker, Niebelschuetz, Florentina, Stephan, Ralf, Tonisch, Katja, Ambacher, Oliver, Hein, Matthias A.
Gas Pressure Sensing Based on MEMS Resonators
2007 SENSORS, 2007 IEEE, page: 1251 - 1254 - Cimalla, Volker, Pezoldt, Jörg, Ambacher, Oliver
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
2007 Journal of Physics D: Applied Physics, IOP Publishing, volume: 40, issue: 20, page: 6386-6434 - Tonisch, Katja, Weise, Frank, Stubenrauch, Mike, Cimalla, Volker, Ecke, Gernot, Will, Florentina, Romanus, Henry, Mrotzek, Susanne, Hofmeister, Herbert, Hoffmann, Martin, Hülsenberg, Dagmar, Ambacher, Oliver
Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres
2007 Physica E: Low-dimensional Systems and Nanostructures, Elsevier BV, volume: 38, issue: 1-2, page: 40-43 - Cimalla, Volker, Pradarutti, Boris, Matthäus, Gabor, Brückner, Claudia, Riehemann, Stefan, Notni, Günther, Nolte, Stefan H., Tünnermann, Andreas, Lebedev, Vadim, Ambacher, Oliver
High efficient terahertz emission from InN surfaces
2007 physica status solidi (b), Wiley, volume: 244, issue: 6, page: 1829-1833 - Wang, Chunyu, Cimalla, Volker, Kups, Thomas, Röhlig, Claus-Christian, Stauden, Thomas, Ambacher, Oliver, Kunzer, Michael, Passow, Thorsten, Schirmacher, Wilhelm, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim
Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes
2007 Applied Physics Letters, AIP Publishing, volume: 91, issue: 10, page: 103509 - Romanus, Henry, Schadewald, J., Cimalla, Volker, Niebelschutz, Merten, Machleidt, Torsten, Franke, Karl-Heinz, Spiess, Lothar, Ambacher, Oliver
Markers prepared by focus ion beam technique for nanopositioning procedures
2007 Microelectronic Engineering, Elsevier BV, volume: 84, issue: 3, page: 524-527 - Pezoldt, Jörg, Foerster, Christian, Stauden, Thomas, Cimalla, Volker, Morales, Francisco M., Zgheib, Charbel, Masri, Pierre M., Ambacher, Oliver
Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si
2007 Materials Science Forum, Trans Tech Publications, Ltd., volume: 556-557, page: 203-206 - Himmerlich, Marcel, Krischok, Stefan, Lebedev, Vadim, Ambacher, Oliver, Schäfer, Jürgen A.
Morphology and surface electronic structure of MBE grown InN
2007 Journal of Crystal Growth, Elsevier BV, volume: 306, issue: 1, page: 6-11 - Cimalla, Volker, Niebelschuetz, Florentina, Tonisch, Katja, Foerster, Christian, Brueckner, Klemens, Friedrich, Thomas, Pezoldt, Jörg, Stephan, Ralf, Hein, Matthias A.
Nanoelectromechanical devices for sensing applications
2007 Sensors and Actuators B: Chemical, Elsevier BV, volume: 126, issue: 1, page: 24-34 - Cimalla, Volker, Brueckner, Klemens, Hassel, Achim Walter, Hein, Matthias A., Niebelschuetz, Florentina, Niebelschutz, Merten, Pezoldt, Jörg, Romanus, Henry, Röhlig, Claus-Christian, Tonisch, Katja, Weber, Jochen, Ambacher, Oliver
Nanomechanics with nanowires and nano-electro-mechanical systems
2007 Workshop Development, characterization and industrial application of nanostructured thin films, hard and superhard coatings - Tonisch, Katja, Cimalla, Volker, Will, Florentina, Weise, Frank, Stubenrauch, Mike, Albrecht, Arne, Hoffmann, Martin, Ambacher, Oliver
Nanowire-based electromechanical biomimetic sensor
2007 Physica E: Low-dimensional Systems and Nanostructures, Elsevier BV, volume: 37, issue: 1-2, page: 208-211 - Lorenz, P., Lebedev, Vadim, Gutt, Richard, Schäfer, Jürgen A., Ambacher, Oliver, Krischok, Stefan
Oxidation of lateral polarity heterostructure GaN
2007 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 42 - Wang, Chunyu, Cimalla, Volker, Kups, Thomas, Röhlig, Claus-Christian, Romanus, Henry, Lebedev, Vadim, Pezoldt, Jörg, Stauden, Thomas, Ambacher, Oliver
Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition
2007 Journal of Applied Physics, AIP Publishing, volume: 102, issue: 4, page: 044310 - Romanus, Henry, Schadewald, J., Cimalla, Volker, Niebelschutz, Merten, Machleidt, Torsten, Franke, Karl-Heinz, Spiess, Lothar, Ambacher, Oliver
Preparation of defined structures on very thin foils for characterization of AFM probes
2007 Microelectronic Engineering, Elsevier BV, volume: 84, issue: 3, page: 528-531 - Ali, Majdeddin, Cimalla, Volker, Lebedev, Vadim, Stauden, Thomas, Wang, Chunyu, Ecke, Gernot, Tilak, V., Sandvik, Peter M., Ambacher, Oliver
Reactively sputtered InxVyOz films for detection of NOx, D2, and O2
2007 Sensors and Actuators B: Chemical, Elsevier BV, volume: 123, issue: 2, page: 779-783 - Cimalla, Volker, Lebedev, Vadim, Wang, Chunyu, Ali, Majdeddin, Ecke, Gernot, Polyakov, Vladimir, Schwierz, Frank, Ambacher, Oliver, Lu, Haiyan, Schaff, William J.
Reduced surface electron accumulation at InN films by ozone induced oxidation
2007 Applied Physics Letters, AIP Publishing, volume: 90, issue: 15, page: 152106 - Niebelschuetz, Florentina, Cimalla, Volker, Brueckner, Klemens, Stephan, Ralf, Tonisch, Katja, Hein, Matthias A., Ambacher, Oliver
Sensing applications of micro- and nanoelectromechanical resonators
2007 Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems, SAGE Publications, volume: 221, issue: 2, page: 59-65 - Ali, Majdeddin, Cimalla, Volker, Lebedev, Vadim, Stauden, Thomas, Ecke, Gernot, Tilak, V., Sandvik, Peter M., Ambacher, Oliver
SiC-based FET for detection of NOx and O2 using InSnOx as a gate material
2007 Sensors and Actuators B: Chemical, Elsevier BV, volume: 122, issue: 1, page: 182-186 - Lebedev, Vadim, Cherkashinin, Genady, Ecke, Gernot, Cimalla, Volker, Ambacher, Oliver
Space charge limited electron transport in AlGaN photoconductors
2007 Journal of Applied Physics, AIP Publishing, volume: 101, issue: 3, page: 033705 - Schwarz, Reinhard, Cabeça, Ricardo, Morgado, Ester, Niehus, Manfred, Ambacher, Oliver, Marques, Carlos P., Alves, E. Jorge
Stability of GaN films under intense MeV He ion irradiation
2007 Diamond and Related Materials, Elsevier BV, volume: 16, issue: 4-7, page: 1437-1440 - Brueckner, Klemens, Cimalla, Volker, Niebelschuetz, Florentina, Stephan, Ralf, Tonisch, Katja, Ambacher, Oliver, Hein, Matthias A.
Strain- and pressure-dependent RF response of microelectromechanical resonators for sensing applications
2007 Journal of Micromechanics and Microengineering, IOP Publishing, volume: 17, issue: 10, page: 2016-2023 - Wang, Chunyu, Lebedev, Vadim, Cimalla, Volker, Kups, Thomas, Tonisch, Katja, Ambacher, Oliver
Structural studies of single crystalline In2O3 films epitaxially grown on InN(0001)
2007 Applied Physics Letters, AIP Publishing, volume: 90, issue: 22, page: 221902 - Himmerlich, Marcel, Wang, Chunyu, Cimalla, Volker, Schäfer, Jürgen A., Ambacher, Oliver, Krischok, Stefan
Surface properties of indium oxide and its interaction with ozone for the use as gas sensor
2007 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 42, issue: 4 - Cimalla, Volker, Stubenrauch, Mike, Weise, Frank, Fischer, Michael, Tonisch, Katja, Hoffmann, Martin, Ambacher, Oliver
Suspended nanowire web
2007 Applied Physics Letters, AIP Publishing, volume: 90, issue: 10, page: 101504 - Kups, Thomas, Wang, Chunyu, Gubisch, Martin, Spiess, Lothar, Ambacher, Oliver
TEM investigation of sputtered and epitaxial grown indium oxide layers for ozone sensors
2007 Microscopy and Microanalysis, Cambridge University Press (CUP), volume: 13, issue: S03 - Wang, Chunyu, Cimalla, Volker, Cherkashinin, Genady, Romanus, Henry, Ali, Majdeddin, Ambacher, Oliver
Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition
2007 Thin Solid Films, Elsevier BV, volume: 515, issue: 5, page: 2921-2925 - Wang, Chunyu, Cimalla, Volker, Romanus, Henry, Kups, Thomas, Niebelschutz, Merten, Ambacher, Oliver
Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition
2007 Thin Solid Films, Elsevier BV, volume: 515, issue: 16, page: 6611-6614 - Machleidt, Torsten, Franke, Karl-Heinz, Romanus, Henry, Cimalla, Volker, Niebelschutz, Merten, Spiess, Lothar, Ambacher, Oliver
Using defined structures on very thin foils for characterizing AFM tips
2007 Ultramicroscopy, Elsevier BV, volume: 107, issue: 10-11, page: 1086-1090
2006
- Ali, Majdeddin, Cimalla, Volker, Lebedev, Vadim, Tilak, V., Sandvik, Peter M., Merfeld, Danielle W., Ambacher, Oliver
A Study of Hydrogen Sensing Performance of Pt–GaN Schottky Diodes
2006 IEEE Sensors Journal, Institute of Electrical and Electronics Engineers (IEEE), volume: 6, issue: 5, page: 1115-1119 - Wang, Chunyu, Cimalla, Volker, Röhlig, Claus-Christian, Stauden, Thomas, Niebelschuetz, Florentina, Ambacher, Oliver, Kiesewetter, Olaf, Kittelmann, S.
A new type of highly sensitive portable ozone sensor operating at room temperature
2006 SENSORS, IEEE, page: 81 - 84 - Erb, Tobias J., Zhokhavets, Uladzimir, Hoppe, Harald, Gobsch, Gerhard, Al-Ibrahim, Maher, Ambacher, Oliver
Absorption and crystallinity of poly(3-hexylthiophene)/fullerene blends in dependence on annealing temperature
2006 Thin Solid Films, Elsevier BV, volume: 511-512, page: 483-485 - Niebelschutz, Merten, Ecke, Gernot, Cimalla, Volker, Tonisch, Katja, Ambacher, Oliver
Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen
2006 Materialwissenschaft und Werkstofftechnik, Wiley, volume: 37, issue: 11, page: 937-940 - Pezoldt, Jörg, Trushin, Yuri V., Kharlamov, Vladimir S., Schmidt, Alexander, Cimalla, Volker, Ambacher, Oliver
Carbon surface diffusion and SiC nanocluster self-ordering
2006 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier BV, volume: 253, issue: 1-2, page: 241-245 - Shokhovets, Sviatoslav, Gobsch, Gerhard, Ambacher, Oliver
Conduction band parameters of ZnO
2006 Superlattices and Microstructures, Elsevier BV, volume: 39, issue: 1-4, page: 299-305 - Lebedev, Vadim, Morales, Francisco M., Cimalla, Volker, Lozano, J. G., González, David, Himmerlich, Marcel, Krischok, Stefan, Schäfer, Jürgen A., Ambacher, Oliver
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy
2006 Superlattices and Microstructures, Elsevier BV, volume: 40, issue: 4-6, page: 289-294 - Buchheim, Carsten, Goldhahn, Rüdiger, Winzer, A. T., Cobet, Christoph, Rakel, M., Esser, Norbert, Rossow, Uwe, Fuhrmann, Daniel, Hangleiter, Andreas, Ambacher, Oliver
Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy
2006 physica status solidi (c), Wiley, volume: 3, issue: 6, page: 2009-2013 - Matthäus, Gabor, Tünnermann, Andreas, Pradarutti, Boris, Brückner, Claudia, Riehemann, Stefan, Notni, Günther, Nolte, Stefan H., Cimalla, Volker, Lebedev, Vadim, Ambacher, Oliver
Detailed Study of Differently Grown InN Wavers as Strong THz Surface Emitters Excited at 800 nm and 1060 nm
2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, page: 369 - 369 - Goldhahn, Rüdiger, Schley, Pascal, Winzer, A. T., Gobsch, Gerhard, Cimalla, Volker, Ambacher, Oliver, Rakel, M., Cobet, Christoph, Esser, Norbert, Lu, Haiyan, Schaff, William J.
Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
2006 physica status solidi (a), Wiley, volume: 203, issue: 1, page: 42-49 - Pezoldt, Jörg, Zgheib, Charbel, Lebedev, Vadim, Masri, Pierre M., Ambacher, Oliver
Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
2006 Superlattices and Microstructures, Elsevier BV, volume: 40, issue: 4-6, page: 612-618 - Lebedev, Vadim, Morales, Francisco M., Romanus, Henry, Ecke, Gernot, Cimalla, Volker, Himmerlich, Marcel, Krischok, Stefan, Schäfer, Jürgen A., Ambacher, Oliver
Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy
2006 physica status solidi (c), Wiley, volume: 3, issue: 6, page: 1420-1424 - Lebedev, Vadim, Cimalla, Volker, Pezoldt, Jörg, Himmerlich, Marcel, Krischok, Stefan, Schäfer, Jürgen A., Ambacher, Oliver, Morales, Francisco M., Lozano, J. G., González, David
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
2006 Journal of Applied Physics, AIP Publishing, volume: 100, issue: 9, page: 094902 - Lebedev, Vadim, Cimalla, Volker, Baumann, Tommy, Ambacher, Oliver, Morales, Francisco M., Lozano, J. G., González, D.
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
2006 Journal of Applied Physics, AIP Publishing, volume: 100, issue: 9, page: 094903 - Cherkashinin, Genady, Krischok, Stefan, Himmerlich, Marcel, Ambacher, Oliver, Schäfer, Jürgen A.
Electronic properties of C60/InP(001) heterostructures
2006 Journal of Physics: Condensed Matter, IOP Publishing, volume: 18, issue: 43, page: 9841-9848 - Shokhovets, Sviatoslav, Gobsch, Gerhard, Ambacher, Oliver
Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors
2006 Physical Review B, American Physical Society (APS), volume: 74, issue: 15 - Ecke, Gernot, Niebelschutz, Merten, Kosiba, Rastislav, Rossow, Uwe, Cimalla, Volker, Liday, Jozef, Worincic, Peter, Pezoldt, Jörg, Lebedev, Vadim, Ambacher, Oliver
Fermi Level Analysis of Group III Nitride Semiconductor Device Structures by Auger Peak Position Measurements
2006 J Electr Eng-slovak, volume: 57, issue: 6 - Tonisch, Katja, Niebelschuetz, Florentina, Cimalla, Volker, Romanus, Henry, Ambacher, Oliver
Fully Unstrained GaN on Thick AlN Layers for MEMS Application
2006 MRS Proceedings, Cambridge University Press (CUP), volume: 955 - Zgheib, Charbel, McNeil, Laurie E., Masri, Pierre M., Foerster, Christian, Morales, Francisco M., Stauden, Thomas, Ambacher, Oliver, Pezoldt, Jörg
Ge-modified Si(100) substrates for the growth of 3C-SiC(100)
2006 Applied Physics Letters, AIP Publishing, volume: 88, issue: 21, page: 211909 - Foerster, Christian, Cimalla, Volker, Lebedev, Vadim, Pezoldt, Jörg, Brueckner, Klemens, Stephan, Ralf, Hein, Matthias A., Aperathitis, Elias, Ambacher, Oliver
Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications
2006 physica status solidi (a), Wiley, volume: 203, issue: 7, page: 1829-1833 - Cimalla, Volker, Foerster, Christian, Cengher, D., Tonisch, Katja, Ambacher, Oliver
Growth of AlN nanowires by metal organic chemical vapour deposition
2006 physica status solidi (b), Wiley, volume: 243, issue: 7, page: 1476-1480 - Cimalla, Volker, Will, Florentina, Tonisch, Katja, Niebelschutz, Merten, Lebedev, Vadim, Kittler, G., Himmerlich, Marcel, Krischok, Stefan, Schäfer, Jürgen A., Gebinoga, Michael, Schober, Andreas, Friedrich, Thomas, Ambacher, Oliver
Impact of Device Technology Processes on the Surface Properties and Biocompatibility of Group III Nitride Based Sensors
2006 Materialwissenschaft und Werkstofftechnik, Wiley, volume: 37, issue: 11, page: 919-923 - Hermann, M., Furtmayr, F., Morales, Francisco M., Ambacher, Oliver, Stutzmann, Martin, Eickhoff, Martin
Impact of silicon incorporation on the formation of structural defects in AlN
2006 Journal of Applied Physics, AIP Publishing, volume: 100, issue: 11, page: 113531 - Pradarutti, Boris, Matthäus, Gabor, Brückner, Claudia, Riehemann, Stefan, Notni, Günther, Nolte, Stefan H., Cimalla, Volker, Lebedev, Vadim, Ambacher, Oliver, Tünnermann, Andreas
InN as THz emitter excited at 1060 nm and 800 nm
2006 Millimeter-Wave and Terahertz Photonics, volume: 6914 - Dmowski, Lesław H., Dybko, Krzysztof, Plesiewicz, J. A., Suski, Tadek, Lu, Haiyan, Schaff, William J., Kurouchi, M., Nanishi, Yasushi, Konczewicz, L., Cimalla, Volker, Ambacher, Oliver
Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
2006 physica status solidi (b), Wiley, volume: 243, issue: 7, page: 1537-1540 - Foerster, Christian, Kosiba, Rastislav, Ecke, Gernot, Cimalla, Volker, Ambacher, Oliver, Pezoldt, Jörg
Low Energy Ion Modification of 3C-SiC Surfaces
2006 Materials Science Forum, Trans Tech Publications, Ltd., volume: 527-529, page: 685-688 - Monroy, Eva, Zenneck, Jan, Cherkashinin, Genady, Ambacher, Oliver, Hermann, M., Stutzmann, Martin, Eickhoff, Martin
Luminescence properties of highly Si-doped AlN
2006 Applied Physics Letters, AIP Publishing, volume: 88, issue: 7, page: 071906 - Foerster, Christian, Cimalla, Volker, Stubenrauch, Mike, Rockstuhl, Carsten, Brueckner, Klemens, Hein, Matthias A., Pezoldt, Jörg, Ambacher, Oliver
Micromachining of Novel SiC on Si Structures for Device and Sensor Applications
2006 Materials Science Forum, Trans Tech Publications, Ltd., volume: 527-529, page: 1111-1114 - Cherkashinin, Genady, Ambacher, Oliver, Schiffer, T., Schmidt, G.
Mobility edge in hydrogenated amorphous carbon
2006 Applied Physics Letters, AIP Publishing, volume: 88, issue: 17, page: 172114 - Cimalla, Volker, Lebedev, Vadim, Morales, Francisco M., Goldhahn, Rüdiger, Ambacher, Oliver
Model for the thickness dependence of electron concentration in InN films
2006 Applied Physics Letters, AIP Publishing, volume: 89, issue: 17, page: 172109 - Schmidt, Alexander, Trushin, Yuri V., Safonov, Kyrylo, Kharlamov, Vladimir S., Kulikov, Dmitri V., Ambacher, Oliver, Pezoldt, Jörg
Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
2006 Materials Science Forum, Trans Tech Publications, Ltd., volume: 527-529, page: 315-318 - Lebedev, Vadim, Morales, Francisco M., Fischer, Michael, Himmerlich, Marcel, Krischok, Stefan, Schaefer, Juergen A., Ambacher, Oliver
Nanocrystalline AlN:Si field emission arrays for vacuum electronics
2006 physica status solidi (a), Wiley, volume: 203, issue: 7, page: 1839-1844 - Voigt, St., Zhokhavets, Uladzimir, Hoppe, Harald, Gobsch, Gerhard, Al-Ibrahim, Maher, Ambacher, Oliver, Sensfuss, Steffi
Optical investigation of P3HT/PCBM bulk heterojunction solar cells by photoinduced absorption spectroscopy
2006 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 41, issue: 1 - Cimalla, Volker, Lebedev, Vadim, Morales, Francisco M., Niebelschutz, Merten, Ecke, Gernot, Goldhahn, Rüdiger, Ambacher, Oliver
Origin of n-type conductivity in nominally undoped InN
2006 Materialwissenschaft und Werkstofftechnik, Wiley, volume: 37, issue: 11, page: 924-928 - Wang, Chunyu, Cimalla, Volker, Romanus, Henry, Kups, Thomas, Ecke, Gernot, Stauden, Thomas, Ali, Majdeddin, Lebedev, Vadim, Pezoldt, Jörg, Ambacher, Oliver
Phase selective growth and properties of rhombohedral and cubic indium oxide
2006 Applied Physics Letters, AIP Publishing, volume: 89, issue: 1, page: 011904 - Tonisch, Katja, Cimalla, Volker, Foerster, Christian, Romanus, Henry, Ambacher, Oliver, Dontsov, Denis
Piezoelectric properties of polycrystalline AlN thin films for MEMS application
2006 Sensors and Actuators A: Physical, Elsevier BV, volume: 132, issue: 2, page: 658-663 - Tonisch, Katja, Cimalla, Volker, Foerster, Christian, Dontsov, Denis, Ambacher, Oliver
Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy
2006 physica status solidi (c), Wiley, volume: 3, issue: 6, page: 2274-2277 - Ali, Majdeddin, Cimalla, Volker, Lebedev, Vadim, Romanus, Henry, Tilak, V., Merfeld, Danielle W., Sandvik, Peter M., Ambacher, Oliver
Pt/GaN Schottky diodes for hydrogen gas sensors
2006 Sensors and Actuators B: Chemical, Elsevier BV, volume: 113, issue: 2, page: 797-804 - Cimalla, Volker, Foerster, Christian, Will, Florentina, Tonisch, Katja, Brueckner, Klemens, Stephan, Ralf, Hein, M. E., Ambacher, Oliver, Aperathitis, Elias
Pulsed mode operation of strained microelectromechanical resonators in air
2006 Applied Physics Letters, AIP Publishing, volume: 88, issue: 25, page: 253501 - Kosiba, Rastislav, Liday, Jozef, Ecke, Gernot, Ambacher, Oliver, Breza, Jan, Vogrinčič, P.
Quantitative Auger electron spectroscopy of SiC
2006 Vacuum, Elsevier BV, volume: 80, issue: 9, page: 990-995 - Zhokhavets, Uladzimir, Erb, Tobias J., Gobsch, Gerhard, Al-Ibrahim, Maher, Ambacher, Oliver
Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells
2006 Chemical Physics Letters, Elsevier BV, volume: 418, issue: 4-6, page: 347-350 - Fischer, Michael, Stubenrauch, Mike, Kups, Thomas, Romanus, Henry, Morales, Francisco M., Ecke, Gernot, Hoffmann, Martin, Knedlik, Ch., Ambacher, Oliver, Pezoldt, Jörg
Self organization and properties of Black Silicon
2006 Information technology and electrical engineering-devices and systems, materials and technologies for the future, volume: 51 - Cimalla, Volker, Niebelschutz, Merten, Ecke, Gernot, Lebedev, Vadim, Ambacher, Oliver, Himmerlich, Marcel, Krischok, Stefan, Schäfer, Jürgen A., Lu, Haiyan, Schaff, William J.
Surface band bending at nominally undoped and Mg-doped InN by Auger Electron Spectroscopy
2006 physica status solidi (a), Wiley, volume: 203, issue: 1, page: 59-65 - Himmerlich, Marcel, Krischok, Stefan, Schäfer, Jürgen A., Lebedev, Vadim, Ambacher, Oliver
Surface characterization of InN grown by PIMBE
2006 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 41, issue: 1 - Cimalla, Volker, Niebelschutz, Merten, Ecke, Gernot, Ambacher, Oliver, Goldhahn, Rüdiger, Lu, Haiyan, Schaff, William J.
The conductivity of Mg-doped InN
2006 physica status solidi (c), Wiley, volume: 3, issue: 6, page: 1721-1724 - Cherkashinin, Genady, Lebedev, Vadim, Wagner, Robert E., Cimalla, Volker, Ambacher, Oliver
The performance of AlGaN solar blind UV photodetectors: responsivity and decay time
2006 physica status solidi (b), Wiley, volume: 243, issue: 7, page: 1713-1717 - Schley, Pascal, Goldhahn, Rüdiger, Winzer, A. T., Gobsch, Gerhard, Cimalla, Volker, Ambacher, Oliver, Rakel, M., Cobet, Christoph, Esser, Norbert, Lu, Haiyan, Schaff, William J.
Transition energies and Stokes shift analysis for In-rich InGaN alloys
2006 physica status solidi (b), Wiley, volume: 243, issue: 7, page: 1572-1576 - Buchheim, Carsten, Kittler, G., Cimalla, Volker, Lebedev, Vadim, Fischer, Michael, Krischok, Stefan, Yanev, Vasil, Himmerlich, Marcel, Ecke, Gernot, Schäfer, Jürgen A., Ambacher, Oliver
Tuning of Surface Properties of AlGaN/GaN Sensors for Nanodroplets and Picodroplets
2006 IEEE Sensors Journal, Institute of Electrical and Electronics Engineers (IEEE), volume: 6, issue: 4, page: 881-886 - Wang, Chunyu, Cimalla, Volker, Ambacher, Oliver
Tuning of electrical properties of InxOy thin films grown by MOCVD for different applications
2006 Materialwissenschaft und Werkstofftechnik, Wiley, volume: 37, issue: 11, page: 945-946 - Cimalla, Volker, Foerster, Christian, Lebedev, Vadim, Cengher, D., Ambacher, Oliver
Wet chemical etching of AlN in KOH solution
2006 physica status solidi (c), Wiley, volume: 3, issue: 6, page: 1767-1770 - Niebelschutz, Merten, Ecke, Gernot, Cimalla, Volker, Tonisch, Katja, Ambacher, Oliver
Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements
2006 Journal of Applied Physics, AIP Publishing, volume: 100, issue: 7, page: 074909 - Shokhovets, Sviatoslav, Gobsch, Gerhard, Lebedev, Vadim, Ambacher, Oliver
“Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties
2006 Applied Surface Science, Elsevier BV, volume: 253, issue: 1, page: 224-227
2005
- Morales, Francisco M., Foerster, Christian, Ambacher, Oliver, Pezoldt, Jörg
Beta to alpha transition and defects on SiC on Si grown by CVD
2005, Microscopy of Semiconducting Materials, page: 131 - 134, - Al-Ibrahim, Maher, Sensfuss, Steffi, Uziel, Jutta, Ecke, Gernot, Ambacher, Oliver
Comparison of normal and inverse poly(3-hexylthiophene)/fullerene solar cell architectures
2005 Solar energy materials & solar cells, NH, Elsevier, volume: 85, issue: 2, page: 277-283 - Safonov, Kyrylo, Trushin, Yuri V., Ambacher, Oliver, Pezoldt, Jörg
Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
2005 Materials Science Forum, Trans Tech Publications, Ltd., volume: 483-485, page: 169-172 - Lebedev, Vadim, Cimalla, Volker, Wagner, Robert E., Kaiser, Ute, Ambacher, Oliver
Defect related absorption and emission in AlGaN solar-blind UV photodetectors
2005 Physica status solidi, Wiley-VCH, volume: 2, issue: 4, page: 1360-1365 - Zgheib, Charbel, Kazan, Michel, Weih, Petia, Ambacher, Oliver, Masri, Pierre M., Pezoldt, Jörg
Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates
2005 Physica status solidi, Wiley-VCH, volume: 2, issue: 4, page: 1284-1287 - Lebedev, Vadim, Cimalla, Volker, Kaiser, Ute, Foerster, Christian, Pezoldt, Jörg, Biskupek, Johannes, Ambacher, Oliver
Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si(111)
2005 Journal of Applied Physics, AIP Publishing, volume: 97, issue: 11, page: 114306 - Al-Ibrahim, Maher, Ambacher, Oliver, Sensfuss, Steffi, Gobsch, Gerhard
Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene): Fullerene
2005 Applied Physics Letters, AIP Publishing, volume: 86, issue: 20, page: 201120 - Brueckner, Klemens, Foerster, Christian, Tonisch, Katja, Cimalla, Volker, Ambacher, Oliver, Stephan, Ralf, Blau, Kurt Gerd, Hein, Matthias A.
Electromechanical resonances of SiC and AlN beams under ambient conditions
2005 European Microwave Conference, volume: 3 - Foerster, Christian, Cimalla, Volker, Aperathitis, Elias, Brueckner, Klemens, Stephan, Ralf, Hein, Matthias A., Pezoldt, Jörg, Ambacher, Oliver
Fabrication of 3C-SiC/Si MEMS and NEMS for sensor applications
2005 HeT-SiC-05 - Weih, Petia, Romanus, Henry, Stauden, Thomas, Spiess, Lothar, Ambacher, Oliver, Pezoldt, Jörg
Growth of 3C-(Si1-xC1-Y) Gex+ y layers on 4H-SiC by molecular beam epitaxy
2005 Materials Science Forum, Trans Tech Publications, Ltd., volume: 483-485, page: 173-176 - Schmidt, Alexander, Kharlamov, Vladimir S., Safonov, Kyrylo, Trushin, Yuri V., Zhurkin, Evgeny E., Cimalla, Volker, Ambacher, Oliver, Pezoldt, Jörg
Growth of three-dimensional SiC clusters on Si modelled by KMC
2005 Computational materials science, Elsevier Science, volume: 33, issue: 1-3, page: 375-381 - Rockstuhl, Carsten, Herzig, H. P., Foerster, Christian, Leycuras, André, Ambacher, Oliver, Pezoldt, Jörg
Infrared Gratings Based on SiC/Si-Heterostructures
2005 Materials Science Forum, Trans Tech Publications, Ltd., volume: 483-485, page: 433-436 - Weih, Petia, Stauden, Thomas, Ecke, Gernot, Shokhovets, Sviatoslav, Zgheib, Charbel, Voelskow, Matthias, Skorupa, W., Ambacher, Oliver, Pezoldt, Jörg
Ion beam synthesis of 3C-(Si1-xC1-y)Gex+ysolid solutions
2005 physica status solidi (a), Wiley, volume: 202, issue: 4, page: 545-549 - Foerster, Christian, Cimalla, Volker, Ambacher, Oliver, Pezoldt, Jörg
Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
2005 Materials Science Forum, Trans Tech Publications, Ltd., volume: 483-485, page: 201-204 - Foerster, Christian, Cimalla, Volker, Brueckner, Klemens, Hein, Matthias A., Pezoldt, Jörg, Ambacher, Oliver
Micro-electromechanical systems based on 3C-SiC/Si heterostructures
2005 Materials science & engineering, Elsevier, volume: 25, issue: 5-8, page: 804-808 - Shokhovets, Sviatoslav, Gobsch, Gerhard, Ambacher, Oliver
Momentum matrix element and conduction band nonparabolicity in wurtzite GaN
2005 Applied physics letters, American Inst. of Physics, volume: 86, issue: 16, page: 161908 - Cimalla, Volker, Lebedev, Vadim, Kaiser, Ute, Goldhahn, Rüdiger, Foerster, Christian, Pezoldt, Jörg, Ambacher, Oliver
Polytype control and properties of AlN on silicon
2005 Physica status solidi, Wiley-VCH, volume: 2, issue: 7, page: 2199-2203 - Foerster, Christian, Cimalla, Volker, Brueckner, Klemens, Lebedev, Vadim, Stephan, Ralf, Hein, Matthias A., Ambacher, Oliver
Processing of novel SiC and group III-nitride based micro- and nanomechanical devices
2005 Physica status solidi, Wiley-VCH, volume: 202, issue: 4, page: 671-676 - Zgheib, Charbel, McNeil, Laurie E., Kazan, Michel, Masri, Pierre M., Morales, Francisco M., Ambacher, Oliver, Pezoldt, Jörg
Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)
2005 Applied Physics Letters, AIP Publishing, volume: 87, issue: 4, page: 041905 - Dmowski, Lesław H., Plesiewicz, J. A., Suski, Tadek, Lu, Haiyan, Schaff, William J., Kurouchi, M., Nanishi, Yasushi, Konczewicz, L., Cimalla, Volker, Ambacher, Oliver
Resonant localized donor state above the conduction band minimum in InN
2005 Applied Physics Letters, AIP Publishing, volume: 86, issue: 26, page: 262105 - Schley, Pascal, Goldhahn, Rüdiger, Gobsch, Gerhard, Cimalla, Volker, Ambacher, Oliver, Cobet, Christoph, Esser, Norbert, Furthmüller, Jürgen, Bechstedt, Friedhelm, Lu, Haiyan, Schaff, William J.
Selection rules for optical transitions of wurtzite InN
2005 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 40, issue: 2 - Morales, Francisco M., Weih, Petia, Wang, Chunyu, Stauden, Thomas, Ambacher, Oliver, Pezoldt, Jörg
Strain relaxation and void reduction in SiC on Si by Ge predeposition
2005, Microscopy of Semiconducting Materials, page: 135 - 138, - Pezoldt, Jörg, Zgheib, Charbel, Foerster, Christian, Morales, Francisco M., Cherkashinin, Genady, Wang, Chunyu, Leycuras, André, Ferro, Gabriel, Monteil, Y., Cimalla, Volker, Ambacher, Oliver, Masri, Pierre M.
Stress design in 3C-SiC/Si heteroepitaxial systems
2005 HeT-SiC-05 - Cimalla, Volker, Ecke, Gernot, Niebelschutz, Merten, Ambacher, Oliver, Goldhahn, Rüdiger, Lu, Haiyan, Schaff, William J.
Surface conductivity of epitaxial InN
2005 Physica status solidi, Wiley-VCH, volume: 2, issue: 7, page: 2254-2257 - Lebedev, Vadim, Morales, Francisco M., Romanus, Henry, Krischok, Stefan, Ecke, Gernot, Cimalla, Volker, Himmerlich, Marcel, Stauden, Thomas, Cengher, D., Ambacher, Oliver
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
2005 Journal of Applied Physics, AIP Publishing, volume: 98, issue: 9, page: 093508 - Shokhovets, Sviatoslav, Gobsch, Gerhard, Ambacher, Oliver
kp parameters of Wurtzite GaN
2005 Verhandlungen der Deutschen Physikalischen Gesellschaft, volume: 40, issue: 2 - Morales, Francisco M., Foerster, Christian, Ambacher, Oliver, Pezoldt, Jörg
α-SiC–β-SiC heteropolytype structures on Si (111)
2005 Applied Physics Letters, AIP Publishing, volume: 87, issue: 20, page: 201910
2004
- Weih, Petia, Cimalla, Volker, Stauden, Thomas, Kosiba, Rastislav, Ecke, Gernot, Spiess, Lothar, Romanus, Henry, Gubisch, Martin, Bock, Wolfgang, Freitag, Thomas, Fricke, P., Ambacher, Oliver, Pezoldt, Jörg
3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE: 3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE
2004 physica status solidi (c), Wiley, volume: 1, issue: 2, page: 347-350 - Goldhahn, Rüdiger, Cimalla, Volker, Ambacher, Oliver, Cobet, Christoph, Richter, Wolfgang, Esser, Norbert, Lu, Haiyan, Schaff, William J.
Anisotropy of the dielectric function for hexagonal InN
2004 Highlights / Annual report 2003 // Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H - Goldhahn, Rüdiger, Winzer, A. T., Cimalla, Volker, Ambacher, Oliver, Cobet, Christoph, Richter, Wolfgang, Esser, Norbert, Furthmüller, Jürgen, Bechstedt, Friedhelm, Lu, Haiyan, Schaff, William J.
Anisotropy of the dielectric function for wurtzite InN
2004 Superlattices and Microstructures, Elsevier BV, volume: 36, issue: 4-6, page: 591-597 - Kosiba, Rastislav, Liday, Jozef, Ecke, Gernot, Ambacher, Oliver, Breza, Jan
Auger electron spectroscopy of silicon carbide
2004 Journal of ELECTRICAL ENGINEERING, volume: 55, page: 269 - 272 - Bechstedt, Friedhelm, Furthmüller, Jürgen, Ambacher, Oliver, Goldhahn, Rüdiger
Comment on “Mie Resonances, Infrared Emission, and the Band Gap of InN”
2004 Physical Review Letters, American Physical Society (APS), volume: 93, issue: 26 - Cimalla, Volker, Kaiser, Ute, Ecke, Gernot, Pezoldt, Jörg, Spiess, Lothar, Ambacher, Oliver, Lu, Haiyan, Schaff, William J.
Cubic InN on -plane sapphire
2004 Superlattices and Microstructures, Elsevier BV, volume: 36, issue: 4-6, page: 487-495 - Foerster, Christian, Cimalla, Volker, Kosiba, Rastislav, Ecke, Gernot, Weih, Petia, Ambacher, Oliver, Pezoldt, Jörg
Etching of SiC with Fluorine ECR Plasma
2004 Materials Science Forum, Trans Tech Publications, Ltd., volume: 457-460, page: 821-824 - Lebedev, Vadim, Cimalla, Volker, Kaiser, Ute, Ambacher, Oliver
Gap state absorption in AlGaN photoconductors and solar-blind photodetectors
2004 Physica status solidi, Wiley-VCH, volume: 1, issue: 2, page: 233-237 - Daniš, Stanislav, Holý, Väclav, Zhong, Zhenyang, Bauer, Guenther, Ambacher, Oliver
High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers
2004 Applied physics letters, American Inst. of Physics, volume: 85, issue: 15, page: 3065-3067 - Foerster, Christian, Schnabel, F., Weih, Petia, Stauden, Thomas, Ambacher, Oliver, Pezoldt, Jörg
In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces
2004 Thin solid films, Elsevier, volume: 455-456, page: 695-699 - Morales, Francisco M., Zgheib, Charbel, Molina, Sergio Ignacio, Araújo, Daniel, García, Rafael, Fernández-Lorenzo, Concha, Sanz-Hervás, Alfredo, Masri, Pierre M., Weih, Petia, Stauden, Thomas, Ambacher, Oliver, Pezoldt, Jörg
Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
2004 Materials Science Forum, Trans Tech Publications, Ltd., volume: 457-460, page: 297-300 - Zgheib, Charbel, Foerster, Christian, Weih, Petia, Cimalla, Volker, Kazan, Michel, Masri, Pierre M., Ambacher, Oliver, Pezoldt, Jörg
Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces
2004 Thin Solid Films, Elsevier BV, volume: 455-456, page: 183-186 - Fröhlich, Toni, Scharff, Peter, Schliefke, Willy, Romanus, Henry, Gupta, Vinay, Siegmund, Carmen, Ambacher, Oliver, Spiess, Lothar
Insertion of C60 into multi-wall carbon nanotubes––a synthesis of C60@MWCNT
2004 Carbon, Elsevier BV, volume: 42, issue: 12-13, page: 2759-2762 - Krischok, Stefan, Yanev, Vasil, Balykov, O., Himmerlich, Marcel, Schäfer, Jürgen A., Kosiba, Rastislav, Ecke, Gernot, Cimalla, Volker, Ambacher, Oliver, Lu, Haiyan, Schaff, William J., Eastman, Lester F.
Investigations of MBE grown InN and the influence of sputtering on the surface composition
2004 Surface Science, Elsevier BV, volume: 566-568, page: 849-855 - Schmidt, Alexander, Safonov, Kyrylo, Trushin, Yuri V., Cimalla, Volker, Ambacher, Oliver, Pezoldt, Jörg
Kinetic Monte Carlo simulation of SiC nucleation on Si(111)
2004 physica status solidi (a), Wiley, volume: 201, issue: 2, page: 333-337 - Cimalla, Volker, Pezoldt, Jörg, Stauden, Thomas, Schmidt, Alexander, Zekentes, Konstantinos A., Ambacher, Oliver
Lateral alignment of SiC dots on Si: Lateral alignment of SiC dots on Si
2004 physica status solidi (c), Wiley, volume: 1, issue: 2, page: 337-340 - Cimalla, Volker, Schmidt, Alexander, Stauden, Thomas, Zekentes, Konstantinos A., Ambacher, Oliver, Pezoldt, Jörg
Linear alignment of SiC dots on silicon substrates
2004 Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, American Vacuum Society, volume: 22, issue: 5, page: L20 - Buchheim, Carsten, Winzer, A. T., Goldhahn, Rüdiger, Gobsch, Gerhard, Ambacher, Oliver, Link, Andreas, Eickhoff, Martin, Stutzmann, Martin
Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures
2004 Thin Solid Films, Elsevier BV, volume: 450, issue: 1, page: 155-158 - Ali, Majdeddin, Cimalla, Volker, Ambacher, Oliver, Tilak, V., Sandvik, Peter M., Merfeld, Danielle W.
Pt/GaN based Schottky diodes for gas sensing applications
2004 SENSORS, page: 959 - 962 - Pezoldt, Jörg, Zgheib, Charbel, Masri, Pierre M., Averous, Michel, Morales, Francisco M., Kosiba, Rastislav, Ecke, Gernot, Weih, Petia, Ambacher, Oliver
SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and Si
2004 Surface and interface analysis, Wiley, volume: 36, issue: 8, page: 969-972 - Cimalla, Volker, Schmidt, Alexander, Foerster, Christian, Zekentes, Konstantinos A., Ambacher, Oliver, Pezoldt, Jörg
Self-organized SiC nanostructures on silicon
2004 Superlattices and microstructures, Elsevier Science, Academic Press, volume: 36, issue: 1-3, page: 345-351 - Foerster, Christian, Cimalla, Volker, Lebedev, Vadim, Cengher, D., Ambacher, Oliver, Brueckner, Klemens, Stephan, Ralf, Hein, Matthias A.
SiC/Si and AlN/Si heterostructures for microelectromechanical RF sensors
2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748), volume: 2, page: 371 - 374 - Kosiba, Rastislav, Ecke, Gernot, Cimalla, Volker, Spiess, Lothar, Krischok, Stefan, Schäfer, Jürgen A., Ambacher, Oliver, Schaff, William J.
Sputter depth profiling of InN layers
2004 Nuclear instruments & methods in physics research, Elsevier, volume: 215, issue: 3-4, page: 486-494 - Zgheib, Charbel, Masri, Pierre M., Weih, Petia, Ambacher, Oliver, Pezoldt, Jörg
Stress Control in 3C-SiC Films Grown on Si(111)
2004 Materials Science Forum, Trans Tech Publications, Ltd., volume: 457-460, page: 301-304 - Erb, Tobias J., Raleva, Sofiya, Zhokhavets, Uladzimir, Gobsch, Gerhard, Stühn, Bernd, Spode, Matthias, Ambacher, Oliver
Structural and optical properties of both pure poly(3-octylthiophene) (P3OT) and P3OT/fullerene films
2004 Thin solid films, Elsevier, volume: 450, issue: 1, page: 97-100 - Weih, Petia, Cimalla, Volker, Stauden, Thomas, Kosiba, Rastislav, Spiess, Lothar, Romanus, Henry, Gubisch, Martin, Bock, Wolfgang, Freitag, Thomas, Fricke, P., Ambacher, Oliver, Pezoldt, Jörg
Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
2004 Materials Science Forum, Trans Tech Publications, Ltd., volume: 457-460, page: 293-296 - Herrera, Manuel, Cremades, Ana, Piqueras, Javier, Stutzmann, Martin, Ambacher, Oliver
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy
2004 Journal of applied physics, American Inst. of Physics, volume: 95, issue: 10, page: 5305-5310 - Buchheim, Carsten, Kittler, G., Cimalla, Volker, Lebedev, Vadim, Fischer, Michael, Krischok, Stefan, Yanev, Vasil, Ecke, Gernot, Schäfer, Jürgen A., Ambacher, Oliver
Surface modifications of AlGaN/GaN sensors for water based nano- and picodroplets
2004 SENSORS, page: 1007 - 1010 - Shokhovets, Sviatoslav, Fuhrmann, Daniel, Goldhahn, Rüdiger, Gobsch, Gerhard, Ambacher, Oliver, Hermann, M., Eickhoff, Martin
Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance
2004 Thin solid films, Elsevier, volume: 450, issue: 1, page: 163-166 - Morales, Francisco M., Zgheib, Charbel, Molina, Sergio Ignacio, Araújo, Daniel, García, Rafael, Fernández-Lorenzo, Concha, Sanz-Hervás, Alfredo, Masri, Pierre M., Weih, Petia, Stauden, Thomas, Cimalla, Volker, Ambacher, Oliver, Pezoldt, Jörg
The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
2004 Physica status solidi, Wiley-VCH, volume: 1, issue: 2, page: 341-346 - Martinez-Criado, Gema, Miskys, C., Karrer, Uwe, Ambacher, Oliver, Stutzmann, Martin
Two-dimensional electron gas recombination in undoped AlGaN/GaN heterostructures
2004 Japanese journal of applied physics, IOP Publ., volume: 43, issue: 6A, page: 3360-3366 - Hermann, M., Monroy, Eva, Helman, A. J., Baur, Barbara, Albrecht, Martin, Daudin, Bruno, Ambacher, Oliver, Stutzmann, Martin, Eickhoff, Martin
Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes
2004 Physica status solidi, Wiley-VCH, volume: 1, issue: 8, page: 2210-2227
2003
- Nebel, Christoph E., Miskys, C., Garrido, Jose A., Hermann, Martin, Ambacher, Oliver, Eickhoff, Martin, Stutzmann, Martin
AlN/Diamond np-junctions
2003 Diamond and Related Materials, Elsevier BV, volume: 12, issue: 10-11, page: 1873-1876 - Miskys, C., Garrido, Jose A., Nebel, Christoph E., Hermann, M., Ambacher, Oliver, Eickhoff, Martin, Stutzmann, Martin
AlN/diamond heterojunction diodes
2003 Applied Physics Letters, AIP Publishing, volume: 82, issue: 2, page: 290-292 - Kosiba, Rastislav, Ecke, Gernot, Liday, Jozef, Breza, Jan, Ambacher, Oliver
Auger depth profiling and factor analysis of sputter induced altered layers in SiC
2003 Journal of Electrical Engineering, De Gruyter Open, volume: 54, issue: 1, page: 52 - 56 - Kosiba, Rastislav, Ecke, Gernot, Liday, Jozef, Breza, Jan, Ambacher, Oliver
Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
2003 Applied Surface Science, Elsevier BV, volume: 220, issue: 1-4, page: 304-312 - Graf, Tobias, Gjukic, Mario, Görgens, Lutz, Ambacher, Oliver, Brandt, Martin S., Stutzmann, Martin
Charge transfer at the Mn acceptor level in GaN
2003 Journal of superconductivity and novel magnetism, Springer, volume: 16, issue: 1, page: 83 - 86 - Cimalla, Volker, Foerster, Christian, Kittler, G., Kosiba, Rastislav, Ecke, Gernot, Ambacher, Oliver, Goldhahn, Rüdiger, Shokhovets, Sviatoslav, Georgakilas, Alexandros, Lu, Haiyan, Schaff, William J.
Correlation between strain, optical and electrical properties of InN grown by MBE
2003 physica status solidi (c), Wiley, issue: 7, page: 2818-2821 - Ambacher, Oliver, Eickhoff, Martin, Link, Andreas, Hermann, M., Stutzmann, Martin, Bernardini, Fabio, Fiorentini, Vincenzo, Smorchkova, Yulia P., Speck, James S., Mishra, Urmesh K., Schaff, William J., Tilak, V., Eastman, Lester F.
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003 physica status solidi (c), Wiley, issue: 6, page: 1878-1907 - Eickhoff, Martin, Schalwig, J., Steinhoff, G., Weidemann, O., Görgens, Lutz, Neuberger, R., Hermann, M., Baur, Barbara, Müller, Gerhard, Ambacher, Oliver, Stutzmann, Martin
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures - Part B: Sensor applications
2003 physica status solidi (c), Wiley, issue: 6, page: 1908-1918 - Bechstedt, Friedhelm, Furthmüller, Jürgen, Ferhat, Mahmoud, Teles, L. K., Scolfaro, L. M. R., Leite, José Roberto, Davydov, Valery Yu, Ambacher, Oliver, Goldhahn, Rüdiger
Energy gap and optical properties of InxGa1xN
2003 physica status solidi (a), Wiley, volume: 195, issue: 3, page: 628-633 - Shokhovets, Sviatoslav, Fuhrmann, Daniel, Goldhahn, Rüdiger, Gobsch, Gerhard, Ambacher, Oliver, Hermann, M., Karrer, Uwe, Eickhoff, Martin
Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity
2003 Applied Physics Letters, AIP Publishing, volume: 82, issue: 11, page: 1712-1714 - Miskys, C., Kelly, Michael K., Ambacher, Oliver, Stutzmann, Martin
Freestanding GaN-substrates and devices
2003 physica status solidi (c), Wiley, issue: 6, page: 1627-1650 - Drakopoulos, M., Zegenhagen, Jörg, Lee, T-L, Snigirev, Anatoly, Snigireva, Irina, Cimalla, Volker, Ambacher, Oliver
GaN polarity domains spatially resolved by x-ray standing wave microscopy
2003 Journal of Physics D: Applied Physics, IOP Publishing, volume: 36, issue: 10A, page: A214-A216 - Graf, Tobias, Gjukic, Mario, Hermann, M., Brandt, Martin S., Stutzmann, Martin, Görgens, Lutz, Philipp, Jan Boris, Ambacher, Oliver
Growth and characterization of GaN:Mn epitaxial films
2003 Journal of applied physics, American Inst. of Physics, volume: 93, issue: 12, page: 9697-9702 - Lu, Haiyan, Schaff, William J., Eastman, Lester F., Wu, Junqiao, Walukiewicz, Wladek, Cimalla, Volker, Ambacher, Oliver
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
2003 Applied Physics Letters, AIP Publishing, volume: 83, issue: 6, page: 1136-1138 - Cimalla, Volker, Pezoldt, Jörg, Ecke, Gernot, Kosiba, Rastislav, Ambacher, Oliver, Spiess, Lothar, Teichert, G., Lu, Haiyan, Schaff, William J.
Growth of cubic InN on r-plane sapphire
2003 Applied physics letters, American Inst. of Physics, volume: 83, issue: 17, page: 3468-3470 - Lu, Haiyan, Schaff, William J., Eastman, Lester F., Cimalla, Volker, Pezoldt, Jörg, Ambacher, Oliver, Wu, Junqiao, Walukiewicz, Wladek
Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy
2003 MRS Proceedings, Cambridge University Press (CUP), volume: 798 - Weih, Petia, Cimalla, Volker, Foerster, Christian, Pezoldt, Jörg, Stauden, Thomas, Spiess, Lothar, Romanus, Henry, Eickhoff, Martin, Hermann, M., Masri, Pierre M., Ambacher, Oliver
High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
2003 Materials Science Forum, Trans Tech Publications, Ltd., volume: 433-436, page: 233-236 - Tilak, V., Ali, Majdeddin, Cimalla, Volker, Manivannan, V., Sandvik, Peter M., Fedison, J., Ambacher, Oliver, Merfeld, Danielle W.
Influence of metal thickness to sensitivity of Pt/GaN Schottky diodes for gas sensing applications
2003 Materials Research Society symposium proceedings : MRSSP, Cambridge University Press (CUP), volume: 798 - Jena, Debdeep, Heikman, Stein, Speck, James S., Mishra, Urmesh K., Link, Andreas, Ambacher, Oliver
Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN
2003 physica status solidi (c), Wiley, issue: 7, page: 2339-2342 - Jena, Debdeep, Heikman, Stein, Speck, James S., Gossard, Arthur, Mishra, Urmesh K., Link, Angela, Ambacher, Oliver
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN
2003 Physical review, APS, volume: 67, issue: 15, page: 153306 - Joshi, Narahari V., Medina, Honorio, Cantarero, Andres, Ambacher, Oliver
Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor
2003 Journal of Physics and Chemistry of Solids, Elsevier BV, volume: 64, issue: 9-10, page: 1685-1689 - Cros, Ana, Joshi, Narahari V., Smith, T., Cantarero, Andres, Martinez-Criado, Gema, Ambacher, Oliver, Stutzmann, Martin
Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire
2003 physica status solidi (c), Wiley, issue: 7, page: 2699-2702 - Yang, Woochul, Rodriguez, B. J., Park, M., Nemanich, R. J., Ambacher, Oliver, Cimalla, Volker
Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures
2003 Journal of Applied Physics, AIP Publishing, volume: 94, issue: 9, page: 5720-5725 - Winzer, A. T., Goldhahn, Rüdiger, Buchheim, Carsten, Ambacher, Oliver, Link, Andreas, Stutzmann, Martin, Smorchkova, Yulia P., Mishra, Urmesh K., Speck, James S.
Photoreflectance studiesof N- and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG
2003 physica status solidi (b), Wiley, volume: 240, issue: 2, page: 380-383 - Jena, Debdeep, Heikman, Stein, Gossard, Arthur, Speck, James S., Mishra, Urmesh K., Link, Andreas, Ambacher, Oliver
Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors
2003 APS, volume: 2003 - Lebedev, Vadim, Pezoldt, Jörg, Cimalla, Volker, Jinschek, J., Morales, Francisco M., Ambacher, Oliver
Preparation of Epitaxial Templates for Molecular Beam Epitaxy of III-Nitrides on Silicon Substrates
2003 physica status solidi (c), Wiley, issue: 1, page: 183-187 - Schwierz, Frank, Ambacher, Oliver
Recent advances in GaN HEMT development
2003 The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003., page: 204 - 209 - Graf, Tobias, Gjukic, Mario, Hermann, M., Brandt, Martin S., Stutzmann, Martin, Ambacher, Oliver
Spin resonance investigations ofMn2+in wurtzite GaN and AlN films
2003 Physical review, APS, volume: 67, issue: 16, page: 165215 - Kosiba, Rastislav, Ecke, Gernot, Ambacher, Oliver, Menyhard, M.
Sputtering of SiC with low energy He and Ar ions under grazing incidence
2003 Radiation effects and defects in solids, Taylor & Francis, volume: 158, issue: 10, page: 721-730 - Martinez-Criado, Gema
Study of inversion domain pyramids formed during the GaN:Mg growth
2003 Solid-State Electronics, Elsevier BV, volume: 47, issue: 3, page: 565-568 - Trushin, Yuri V., Safonov, Kyrylo, Ambacher, Oliver, Pezoldt, Jörg
The transition from 2D to 3D nanoclusters of silicon carbide on silicon
2003 Technical physics letters, Springer Science + Business Media, volume: 29, issue: 8, page: 663-665 - Martinez-Criado, Gema, Cros, Ana, Cantarero, Andres, Karrer, Uwe, Ambacher, Oliver, Miskys, C., Stutzmann, Martin
Two-Dimensional Electron Gas Effects on the Photoluminescence from a Nonintentionally Doped AlGaN/GaN Heterojunction
2003 physica status solidi (c), Wiley, issue: 1, page: 392-396
2002
- Fiorentini, Vincenzo, Bernardini, Fabio, Ambacher, Oliver
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
2002 Applied Physics Letters, AIP Publishing, volume: 80, issue: 7, page: 1204-1206 - Schalwig, J., Müller, Gerhard, Eickhoff, Martin, Ambacher, Oliver, Stutzmann, Martin
Gas sensitive GaN/AlGaN-heterostructures
2002 Sensors and Actuators B: Chemical, Elsevier BV, volume: 87, issue: 3, page: 425-430 - Ambacher, Oliver, Majewski, Jacek, Miskys, C., Link, Andreas, Hermann, M., Eickhoff, Martin, Stutzmann, Martin, Bernardini, Fabio, Fiorentini, Vincenzo, Tilak, V., Schaff, B., Eastman, Lester F.
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002 Journal of Physics: Condensed Matter, IOP Publishing, volume: 14, issue: 13, page: 3399-3434 - Graf, Tobias, Gjukic, Mario, Brandt, Martin S., Stutzmann, Martin, Ambacher, Oliver
The Mn3+/2+ acceptor level in group III nitrides
2002 Applied Physics Letters, AIP Publishing, volume: 81, issue: 27, page: 5159-5161 - Gleize, J., Di Carlo, Aldo, Lugli, Paolo, Jancu, J. M., Scholz, R., Ambacher, Oliver, Gerthsen, Dagmar, Hahn, E.
Tight-Binding Simulation of an InGaN/GaN Quantum Well with indium Concentration Fluctuation
2002 physica status solidi : pss, Wiley, volume: 0, issue: 1, page: 298-301
2001
- Eastman, Lester F., Tilak, V., Smart, Joseph A., Green, B. M., Chumbes, E. M., Dimitrov, Roman, Kim, Hyungtak, Ambacher, Oliver, Weimann, N., Prunty, T., Murphy, Martin, Schaff, William J., Shealy, J. R.
Undoped AlGaN/GaN HEMTs for microwave power amplification
2001 IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), volume: 48, issue: 3, page: 479-485
2000
- Ambacher, Oliver, Foutz, B., Smart, Joseph A., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, Martin, Sierakowski, A. J., Schaff, William J., Eastman, Lester F., Dimitrov, Roman, Mitchell, A., Stutzmann, Martin
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2000 Journal of Applied Physics, AIP Publishing, volume: 87, issue: 1, page: 334-344
1999
- Kelly, Michael K., Vaudo, Robert P., Phanse, Vivek M., Görgens, Lutz, Ambacher, Oliver, Stutzmann, Martin
Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
1999 Japanese Journal of Applied Physics, Japan Society of Applied Physics, volume: 38, issue: Part 2, No. 3A, page: L217-L219 - Ambacher, Oliver, Smart, Joseph A., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, Martin, Schaff, William J., Eastman, Lester F., Dimitrov, Roman, Wittmer, L., Stutzmann, Martin, Rieger, W., Hilsenbeck, J.
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Journal of Applied Physics, AIP Publishing, volume: 85, issue: 6, page: 3222-3233
1998
- Metzger, T., Höpler, R., Born, E., Ambacher, Oliver, Stutzmann, Martin, Stömmer, R., Schuster, M., Göbel, Heike R., Christiansen, Silke H., Albrecht, Martin, Strunk, Horst P.
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
1998 Philosophical Magazine A, Informa UK Limited, volume: 77, issue: 4, page: 1013-1025 - Ambacher, Oliver
Growth and applications of group III-nitrides
1998 IOP Publishing, volume: 31, issue: 20, page: 2653
1997
- Brunner, D., Angerer, Helmut, Bustarret, Etienne, Freudenberg, Frank, Höpler, R., Dimitrov, Roman, Ambacher, Oliver, Stutzmann, Martin
Optical constants of epitaxial AlGaN films and their temperature dependence
1997 Journal of Applied Physics, AIP Publishing, volume: 82, issue: 10, page: 5090-5096
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