Publications
Journal Articles
Years: 2023 | 2022 | 2021 | 2019 | 2018 | 2017 | 2015 | 2014 | 2013 | 2012 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2001
back to the top of all publications2023
back to the year overview- Döring, Philipp, Sinnwell, Matthias, Müller, Stefan, Czap, Heiko, Driad, Rachid
A study on the performance of algan/gan hemts regrown on mg-implanted gan layers with low channel thickness
2023 IEEE transactions on electron devices, IEEE, volume: 70, issue: 3, page: 947-952 - Streicher, Isabel, Leone, Stefano, Manz, Christian, Kirste, Lutz, Prescher, Mario
Effect of AlN and AlGaN interlayers on AlScN/GaN heterostructures grown by metal–organic chemical vapor deposition
2023 Crystal growth & design, American Chemical Society (ACS), volume: 23, issue: 2, page: 782-791 - Streicher, Isabel, Leone, Stefano, Kirste, Lutz, Manz, Christian, Straňák, Patrik
Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition
2023 Physica status solidi. Rapid research letters, Wiley, volume: 17, issue: 2, page: 2200387
2022
back to the year overview- Neininger, Philipp, Zink, Martin, John, Laurenz, Friesicke, Christian, Tessmann, Axel
16-Way Ka-band power combiner using novel waveguide transitions
2022 IEEE transactions on microwave theory and techniques, IEEE, volume: 70, issue: 6, page: 3074-3086 - Thome, Fabian, Brückner, Peter, Leone, Stefano, Quay, Rüdiger
A wideband E/W-band low-noise amplifier MMIC in a 70-nm gate-length GaN HEMT technology
2022 IEEE transactions on microwave theory and techniques, IEEE, volume: 70, issue: 2, page: 1367-1376 - Neininger, Philipp, John, Laurenz, Zink, Martin, Meder, Dirk, Kuri, Michael
Broadband 100-W Ka-band SSPA based on GaN power amplifiers
2022 IEEE transactions on microwave theory and techniques, IEEE, volume: 32, issue: 6, page: 708-711 - Gashi, Bersant, Meier, Dominik, John, Laurenz, Baumann, Benjamin, Rösch, Markus
Broadband 400 GHz on-chip antenna with a metastructured ground plane and dielectric resonator
2022 IEEE transactions on antennas and propagation, IEEE, volume: 70, issue: 10, page: 9025-9038
2021
back to the year overview- Basler, Michael, Reiner, Richard, Moench, Stefan, Benkhelifa, Fouad, Döring, Philipp
Building blocks for GaN power integration
2021 IEEE access, IEEE, volume: 9, page: 163122-163137 - Mönch, Stefan, Reiner, Richard, Waltereit, Patrick, Benkhelifa, Fouad, Hückelheim, Jan
PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors
2021 IEEE transactions on power electronics, IEEE, volume: 36, issue: 1, page: 83-86
2019
back to the year overview- Gerrer, Thomas, Czap, Heiko, Maier, Thomas, Benkhelifa, Fouad, Müller, Stefan G.
3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond
2019 AIP advances, AIP Publishing, volume: 9, issue: 12, page: 125106 - Gerrer, Thomas, Graff, Andreas, Simon-Najasek, Michel, Czap, Heiko, Maier, Thomas
Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers
2019 Applied physics letters, AIP Publishing, volume: 114, issue: 25, page: 5 S.
2018
back to the year overview- Brückner, Peter, Dammann, Michael, Baeumler, Martina, Kemmer, Tobias, Konstanzer, Helmer
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
2018 Microelectronics reliability, Elsevier BV, volume: 88-90, page: 385-388 - Quay, Rüdiger, Schwantuschke, Dirk, Ture, Erdin, Friesicke, Christian, Krause, Sebastian
High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
2018 Physica status solidi / A, Applied research, Wiley, volume: 215, issue: 9, page: 1700655 - Leone, Stefano, Benkhelifa, Fouad, Kirste, Lutz, Manz, Christian, Müller, Stefan G.
Suppression of iron memory effect in GaN epitaxial layers
2018 Physica status solidi / B, Basic research, Wiley, volume: 255, issue: 5, page: 1700377
2017
back to the year overview- Amirpour, Raul, Darraji, Ramzi, Ghannouchi, Fadhel, Quay, Rüdiger
Enhancement of the broadband efficiency of a Class-J power amplifier with varactor-based dynamic load modulation
2017 IEEE microwave and wireless components letters, IEEE, volume: 27, issue: 2, page: 180-182 - Huber, Thomas, Quay, Rüdiger, Bösch, Wolfgang
New concept for power compression improvement of GaN cascodes in broadband power amplifiers
2017 IEEE microwave and wireless components letters, IEEE, volume: 27, issue: 6, page: 590-592 - Dammann, Michael, Baeumler, Martina, Polyakov, Vladimir, Brückner, Peter, Konstanzer, Helmer
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
2017 Microelectronics reliability, Elsevier BV, volume: 76-77, page: 292-297
2015
back to the year overview- Dammann, Michael, Baeumler, Martina, Brückner, Peter, Bronner, Wolfgang, Maroldt, Stephan
Degradation of 0.25 μm GaN HEMTs under high temperature stress test
2015 Microelectronics reliability, Elsevier BV, volume: 55, issue: 9-10, page: 1667-1671 - Friesicke, Christian, Jacob, Arne F., Quay, Rüdiger
The resistive-reactive class-J power amplifier mode
2015 IEEE microwave and wireless components letters, IEEE, volume: 25, issue: 10, page: 666-668
2014
back to the year overview- Figur, Sascha A., Raay, Friedbert van, Quay, Rüdiger, Vietzorreck, Larissa, Ziegler, Volker
RF-MEMS multi-mode-matching networks for GaN power transistors
2014 International journal of microwave and wireless technologies, Cambridge University Press, volume: 6, issue: 5, page: 447-458 - Figur, Sascha A., Raay, Friedbert van, Quay, Rüdiger, Lohmiller, Peter, Vietzorreck, Larissa
RF-MEMS variable matching networks and switches for multi-band and multi-mode GaN power amplifiers
2014 International journal of microwave and wireless technologies, Cambridge University Press, volume: 6, issue: 3-4, page: 265-276 - Emrick, Rudy, Cruz, Pedro, Carvalho, Nuno B., Gao, Steven, Quay, Rüdiger
The sky's the limit: key technology and market trends in satellite communications
2014 IEEE microwave magazine, IEEE, volume: 15, issue: 2, page: 65-78
2013
back to the year overview- Figur, Sascha A., Vietzorreck, Larissa, Raay, Friedbert van, Quay, Rüdiger, Ziegler, Volker
Simulation of RF MEMS based matching networks and a single pole double throw switch for Multiband T/R Modules
2013 Advances in radio science, Copernicus GmbH, volume: 11, page: 197-206 - Schmid, Ulf, Sledzik, Hardy, Schuh, Patrick, Oppermann, Martin, Seelmann-Eggebert, Matthias
Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications
2013 IEEE transactions on microwave theory and techniques, IEEE, volume: 61, issue: 8, page: 3043-3051
2012
back to the year overview- Schwantuschke, Dirk, Haupt, Christian, Kiefer, Rudolf, Brückner, Peter, Seelmann-Eggebert, Matthias
A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
2012 International journal of microwave and wireless technologies, Cambridge University Press, volume: 4, issue: 3, page: 267-274 - Quay, Rüdiger, Kissinger, Dietmar
Microwave and millimeter wave integrated circuits MTT-6: the RF core chips of the 21st century
2012 IEEE microwave magazine, IEEE, volume: 13, issue: 6, page: 24-25, 141 - Vitanov, Stanislav, Palankovski, Vassil, Maroldt, Stephan, Quay, Rüdiger, Murad, Saad K.
Physics-based modeling of GaN HEMTs
2012 IRE transactions on electron devices, IEEE, volume: 59, issue: 3, page: 685-693 - Carrubba, Vincenzo, Akmal, Muhammad, Quay, Rüdiger, Lees, Jonathan, Cripps, Steve C.
The continuous inverse class-F mode with resistive second-harmonic impedance
2012 IEEE transactions on microwave theory and techniques, IEEE, volume: 60, issue: 6, Pt. 2, page: 1928-1936
2010
back to the year overview- Schmid, Ulf, Reber, Rolf, Chartier, Sébastien, Widmer, Kristina, Oppermann, Martin
GaN devices for communication applications: evolution of amplifier architectures
2010 International journal of microwave and wireless technologies, Cambridge University Press, volume: 2, issue: 1, page: 85-93 - Vitanov, Stanislav, Palankovski, Vassil, Maroldt, Stephan, Quay, Rüdiger
High-temperature modeling of AlGaN/GaN HEMTs
2010 Solid-state electronics, Elsevier, volume: 54, issue: 10, page: 1105-1112 - Aidam, Rolf, Waltereit, Patrick, Kirste, Lutz, Dammann, Michael, Quay, Rüdiger
Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
2010 Physica status solidi. A, Applied research, Wiley, volume: 207, issue: 6, page: 1450-1454
2009
back to the year overview- Sun, Haifeng, Benedickter, Hansruedi, Bolognesi, Colombo R., Feltin, Eric, Gonschorek, Marcus
102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz
2009 IEEE electron device letters, IEEE, volume: 30, issue: 8, page: 796-798 - Quay, Rüdiger, Maroldt, Stephan, Haupt, Christian, Heijningen, Marc van, Tessmann, Axel
Gallium nitride MMICs for mm-wave power operation
2009 Frequenz, De Gruyter, volume: 63, issue: 3-4, page: 51-54 - Köhler, Klaus, Mueller, Stefan, Waltereit, Patrick, Kirste, Lutz, Menner, Hanspeter
Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Growth and electrical properties of AlxGa1−xN/GaN heterostructures
2009 Physica status solidi. A, Applied research, Wiley, volume: 206, issue: 11, page: 2652-2657 - Dammann, Michael, Pletschen, Wilfried, Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
2009 Microelectronics reliability, Elsevier BV, volume: 49, issue: 5, page: 474-477 - Schuh, Patrick, Sledzik, Hardy, Reber, Rolf, Fleckenstein, Andreas, Leberer, Ralf
X-band T/R-module front-end based on GaN MMICs
2009 International journal of microwave and wireless technologies, Cambridge University Press, volume: 1, issue: 4, page: 387-394
2008
back to the year overview- Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Mueller, Stefan
High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
2008 Physica status solidi. A, Applied research, Wiley, volume: 205, issue: 5, page: 1078-1080
2007
back to the year overview- Seelmann-Eggebert, Matthias, Merkle, Thomas, Raay, Friedbert van, Quay, Rüdiger, Schlechtweg, Michael
A systematic state-space approach to large-signal transistor modeling
2007 IEEE transactions on microwave theory and techniques, IEEE, volume: 55, issue: 2, page: 195-206
2006
back to the year overview- Quay, Rüdiger, Kiefer, R., Raay, Friedbert van, Reiner, Richard, Kappeler, Otmar
GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
2006 Physica status solidi. C, Current topics in solid state physics, Wiley, volume: 3, issue: 3, page: 473-477 - Makon, Robert Elvis, Driad, Rachid, Schneider, Karl, Ludwig, Manfred, Aidam, Rolf
InP DHBT-nased monolithically integrated CDR/DEMUX IC operating at 80 Gbit/s
2006 IEEE Journal of Solid-State Circuits, IEEE, volume: 41, issue: 10, page: 2215-2223 - Kirste, Lutz, Mueller, Stefan, Kiefer, Rudolf, Quay, Rüdiger, Köhler, K.
X-ray topographic imaging of (Al, Ga)N/GaN based electronic device structures on SiC
2006 Applied surface science, Elsevier, volume: 253, issue: 1, page: 209-213
2005
back to the year overview- Raay, Friedbert van, Quay, Rüdiger, Kiefer, R., Benkhelifa, Fouad, Raynor, Brian
A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
2005 IEEE microwave and guided wave letters, IEEE, volume: 15, issue: 7, page: 460-462 - Schneider, Karl, Driad, Rachid, Makon, Robert Elvis, Massler, Hermann, Ludwig, Manfred
Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation
2005 IEEE transactions on microwave theory and techniques, IEEE, volume: 53, issue: 11, page: 3378-3387 - Makon, Robert Elvis, Driad, Rachid, Schneider, Karl, Massler, Hermann, Aidam, Rolf
Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz
2005 Electronics letters, Institution of Engineering and Technology (IET), volume: 41, issue: 17, page: 961-963 - Mueller, Stefan, Köhler, Klaus, Kiefer, R., Quay, Rüdiger, Baeumler, Martina
Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
2005 Physica status solidi. C, Current topics in solid state physics, Wiley, volume: 2, issue: 7, page: 2639-2642 - Makon, Robert Elvis, Lang, Manfred, Driad, Rachid, Schneider, Karl, Ludwig, Manfred
Over 80 Gbit∕s 2:1 multiplexer and low power selector ICs using InP∕InGaAs DHBTs
2005 Electronics Letters, Institution of Engineering and Technology (IET), volume: 41, issue: 11, page: 644-646
2004
back to the year overview- Dammann, Michael, Leuther, Arnulf, Quay, Rüdiger, Meng, M., Konstanzer, Helmer
Reliability of 70 nm metamorphic HEMTs
2004 Microelectronics reliability, Elsevier BV, volume: 44, issue: 6, page: 939-943
2003
back to the year overview- Bessemoulin, Alex, Quay, Rüdiger, Ramberger, Suitbert, Massler, Hermann, Schlechtweg, Michael
A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE
2003 IEEE journal of solid state circuits, IEEE, volume: 38, issue: 9, page: 1433-1437 - Quay, Rüdiger, Weimann, Gunter
AlGaN/GaN HEMTs on SiC for high power broadband applications up to 40 GHz
2003 Elektrotechnik und Informationstechnik, Springer, volume: 120, issue: 3, page: 75-78 - Kiefer, Rudolf, Quay, Rüdiger, Mueller, Stefan, Feltgen, Tobias, Raynor, Brian
Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
2003 Physica status solidi. A, Applied research, Wiley, volume: 200, issue: 1, page: 191-194
2001
back to the year overview- Quay, Rüdiger, Hess, Karl, Reuter, Ralf, Schlechtweg, Michael, Grave, T.
Nonlinear electronic transport and device performance of HEMTs
2001 IEEE transactions on electron devices, IEEE, volume: 48, issue: 2, page: 210-217
Book chapters
Years: 2023 | 2016 | 2013 | 2008 | 2004 back to the top of all publications2023
back to the year overview- Quay, Rüdiger
Amplifiers
2023, , - Hartnagel, Hans-Ludwig, Quay, Rüdiger, Rohde, Ulrich Lothar, Rudolph, Matthias
Fundamentals of RF and Microwave Techniques and Technologies
2023, , - Quay, Rüdiger
Semiconductors and semiconductor devices and circuits
2023, ,
2016
back to the year overview- Quay, Rüdiger
Group III-Nitride microwave monolithically integrated circuits
2016, ,
2013
back to the year overview- Ghione, Giovanni, Bonani, F., Quay, Rüdiger, Kasper, E.
RF and microwave semiconductor technologies
2013, ,
2008
back to the year overview- Quay, Rüdiger
Gallium nitride electronics
2008, ,
2004
back to the year overview- Palankovski, Vassil, Quay, Rüdiger
Analysis and simulation of heterostructure devices
2004, ,
Conference papers
Years: 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2000 | 1999 back to the top of all publications2022
back to the year overview- Krause, Sebastian, Brückner, Peter, Quay, Rüdiger
100-V GaN HEMT technology with record-high efficiency at C-Band frequencies
2022 - Samis, Stanislav, Friesicke, Christian, Maier, Thomas, Quay, Rüdiger, Jacob, Arne F.
A 41.5 dBm broadband AlGaN/GaN HEMT balanced power amplifier at K-band
2022 - Moench, Stefan, Mansour, Kareem, Reiner, Richard, Basler, Michael, Waltereit, Patrick
A GaN-based DC-DC converter with zero voltage switching and hysteretic current control for 99% efficient bidirectional charging of electrocaloric capacitive loads
2022 - Maurette-Blasini, Cristina, Kuliabin, Konstantin, Chartier, Sébastien, Quay, Rüdiger
An H-Band mHEMT-based millimeter-wave true-time delay MMIC
2022 - Safari Mugisho, Moise, Thian, Mury, Piacibello, Anna, Camarchia, Vittorio, Quay, Rüdiger
Bandwidth and power back-off performances of a class-EM/F3Power amplifier
2022 - Reiner, Richard, Moench, Stefan, Waltereit, Patrick, Benkhelifa, Fouad, Basler, Michael
Design and characterization of an interleaved GaN half-bridge IC with matrix layout
2022 - Ture, Erdin, Thome, Fabian, Schwantuschke, Dirk, Mikulla, Michael, Quay, Rüdiger
E-band ultra-low-noise (4.5 dB) and high-power (27 dBm) GaN T/R front-end MMIC
2022 - Basler, Michael, Reiner, Richard, Moench, Stefan, Waltereit, Patrick, Quay, Rüdiger
Function blocks of a highly-integrated all-in-GaN power IC for DC-DC conversion
2022 - Moench, Stefan, Reiner, Richard, Mansour, Kareem, Basler, Michael, Waltereit, Patrick
GaN power converter applied to electrocaloric heat pump prototype and carnot cycle
2022 - Mugisho, Moise Safari, Maity, Saikat Kumar, Friesicke, Christian, Quay, Rüdiger
Harmonic-injection doherty power amplifiers with a high small-signal gain
2022
2021
back to the year overview- Mönch, Stefan, Reiner, Richard, Benkhelifa, Fouad, Basler, Michael, Waltereit, Patrick
A three-phase GaN-on-Si inverter IC for low-voltage motor drives
2021 - Mul, Dieuwert P. N., Bootsman, Rob J., Bruinsma, Quinten, Shen, Yiyu, Krause, Sebastian
Efficiency and linearity of digital "Class-C like" transmitters
2021
2020
back to the year overview- Neininger, Philipp, Amirpour, Raul, John, Laurenz, Friesicke, Christian, Quay, Rüdiger
A phase shifter with integrated PA MMIC for Ka-Band frequencies
2020 - Jacob, Arne F., Samis, Stanislav, Friesicke, Christian, Quay, Rüdiger, Maier, Thomas
Broadband high-efficiency power amplifiers in 150 nm AlGaN/GaN technology at Ka-band
2020 - Jacob, Arne F., Samis, Stanislav, Friesicke, Christian, Lozar, Roger, Brückner, Peter
Study of power amplifier harmonic output termination for two AlGaN/GaN technologies at K-/Ka-band
2020
2019
back to the year overview- Hodges, Jason, Schwantuschke, Dirk, Raay, Friedbert van, Brückner, Peter, Quay, Rüdiger
Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
2019 - Quay, Rüdiger, Dammann, Michael, Kemmer, Tobias, Brückner, Peter, Cwiklinski, Maciej
Deep submicron III-N HEMTs – technological development and reliability
2019 - Neininger, Philipp, John, Laurenz, Brückner, Peter, Friesicke, Christian, Quay, Rüdiger
Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
2019 - Krause, Sebastian, Brückner, Peter, Dammann, Michael, Quay, Rüdiger
High-Power-Density AlGaN/GaN Technology for 100-V Operation at L-Band Frequencies
2019
2018
back to the year overview- Jacob, Arne F., Quay, Rüdiger, Maier, Thomas, Samis, Stanislav, Friesicke, Christian
A 5 W AlGaN/GaN power amplifier MMIC for 25–27 GHz downlink applications
2018 - Weber, Rainer, Cwiklinski, Maciej, Wagner, Sandrine, Lozar, Roger, Massler, Hermann
A beyond 110 GHz GaN cascode low-noise mmplifier with 20.3 dBm output power
2018 - Schwantuschke, Dirk, Brückner, Peter, Amirpour, Raul, Tessmann, Axel, Kuri, Michael
Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
2018 - Cwiklinski, Maciej, Friesicke, Christian, Schwantuschke, Dirk, Lozar, Roger, Wagner, Sandrine
First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
2018 - Leone, Stefano, Godejohann, Birte-Julia, Brückner, Peter, Kirste, Lutz, Manz, Christian
High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
2018 - Neininger, Philipp, Meder, Dirk, John, Laurenz, Friesicke, Christian, Zwick, Thomas
Investigation of high-efficiency hybrid power combining for Ka-band frequencies
2018 - Brückner, Peter, Dammann, Michael, Quay, Rüdiger
Investigation of processing modules to establish a mm-wave foundry process for space applications
2018 - Raay, Friedbert van, Schwantuschke, Dirk, Leuther, Arnulf, Brückner, Peter, Peschel, Detlef
Low-frequency dispersion and state dependency in modem microwave III-V HEMTs
2018 - Waltereit, Patrick, Reiner, Richard, Weiss, Beatrix, Moench, Stefan, Müller, Stefan
Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
2018 - Pereira, Aaron, Al-Sarawi, Said, Weste, Neil, Abbott, Derek, Carrubba, Vincenzo
Performance evaluation of commercial GaN RF HEMTs as hybrid topology power switches
2018 - Feuerschütz, Philip, Friesicke, Christian, Lozar, Roger, Wagner, Sandrine, Maier, Thomas
Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
2018 - Pereira, Aaron, Al-Sarawi, Said, Weste, Neil, Abbott, Derek, Carrubba, Vincenzo
X-band GaN high power amplifier with integrated power switch for airborne applications
2018 - Schwantuschke, Dirk, Godejohann, Birte-Julia, Brückner, Peter, Tessmann, Axel, Quay, Rüdiger
mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
2018
2017
back to the year overview- Krause, Sebastian, Neininger, Philipp, Friesicke, Christian, Meder, Dirk, Lozar, Roger
A sequential power amplifier at 3.5 GHz for 5G applications
2017 - Schwantuschke, Dirk, Wagner, Sandrine, Dammann, Michael, Mikulla, Michael, Brückner, Peter
Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
2017 - Schwantuschke, Dirk, Quay, Rüdiger, Brückner, Peter, Tessmann, Axel, Ture, Erdin
Hetero-integrated GaN MMICs: hot islands in a (silicon) ocean…
2017 - Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Mönch, Stefan, Quay, Rüdiger
Monolithically integrated GaN-on-Si power circuits
2017 - Bösch, Wolfgang, Huber, Thomas, Quay, Rüdiger
New concept to control the gain of GaN-cascodes in broadband power amplifiers
2017 - Bösch, Wolfgang, Huber, Thomas, Quay, Rüdiger
Noise degradation of cascodes in broadband power amplifiers
2017 - Schwantuschke, Dirk, Quay, Rüdiger, Brückner, Peter, Reiner, Richard, Waltereit, Patrick
Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
2017 - Gerrer, Thomas, Cimalla, Volker, Waltereit, Patrick, Benkelifa, Fouad, Czap, Heiko
Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
2017
2016
back to the year overview- Feuerschütz, Philip, Friesicke, Christian, Quay, Rüdiger, Jacob, A. F.
A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT
2016 - Rave, Christian, Samis, Stanislav, Friesicke, Christian, Konrath, Willibald, Hirche, Klaus
Active multi-feed satcom systems with GaN SSPA at K-band
2016 - Zibold, Andreas, Kunzer, Michael, Reiner, Richard, Weiss, Beatrix, Waltereit, Patrick
LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers
2016 - Reiner, Richard, Waltereit, Patrick, Weiss, Beatrix, Mönch, Stefan, Wespel, Matthias
Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
2016 - Huber, Thomas, Quay, Rüdiger, Bösch, Wolfgang
Multi-decade GaN feedback power amplifiers in common-source and cascode topology
2016 - Klein, Kirill, Hoene, Eckart, Reiner, Richard, Quay, Rüdiger
Study on packaging and driver integration with GaN switches for fast switching
2016
2015
back to the year overview- Kaleem, Saqib, Kühn, Jutta, Quay, Rüdiger, Hein, Matthias A.
A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC
2015 - Marchetti, Mauro, Carrubba, Vincenzo, Maroldt, Stephan, Mußer, Markus, Quay, Rüdiger
Examples of high-speed harmonic load pull investigations of high-efficiency GaN power transistors
2015 - Kaleem, Saqib, Kühn, Jutta, Quay, Rüdiger, Hein, Matthias A.
Microwave monolithic integrated gallium-nitride switches for low static power reconfigurable switch matrix with passive transparent state for power failure redundancy
2015
2014
back to the year overview- Jacob, Arne F., Friesicke, Christian, Quay, Rüdiger
Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band
2014 - Alsharef, Mohamed, Granzner, Ralf, Ture, Erdin, Quay, Rüdiger, Breza, Jan
Design of GaN tri-gate HEMTs
2014 - Jacob, Arne F., Friesicke, Christian, Quay, Rüdiger
K-band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology
2014 - Pereira, Aaron, Parker, Anthony, Heimlich, Michael, Weste, Neil, Carrubba, Vincenzo
X-band high-efficiency GaAs MMIC PA
2014
2013
back to the year overview- Pahl, Philipp, Diebold, Sebastian, Schwantuschke, Dirk, Wagner, Sandrine, Lozar, Roger
A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-Band AlGaN/GaN MMIC
2013 - Pahl, Philipp, Diebold, Sebastian, Schwantuschke, Dirk, Wagner, Sandrine, Lozar, Roger
A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-band AlGaN/GaN MMIC
2013 - Friesicke, Christian, Quay, Rüdiger, Rohrdantz, Benjamin, Jacob, Arne F.
A linear 4W power amplifier at K-band using 250nm AlGaN/GaN HEMTs
2013 - Diebold, Sebastian, Schwantuschke, Dirk, Müller, D., Wagner, Sandrine, Quay, Rüdiger
AlGaN/GaN-based variable gain amplifiers for W-band operation
2013 - Maroldt, Stephan, Aja Abelan, Beatriz, Raay, Friedbert van, Krause, Sebastian, Brückner, Peter
QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
2013 - Figur, Sascha A., Ziegler, Volker, Raay, Friedbert van, Quay, Rüdiger, Vietzorreck, Larissa
RF MEMS variable matching networks for multi-band and multi-mode GaN power amplifiers
2013 - Waltereit, Patrick, Quay, Rüdiger
Recent developments of Gallium Nitride monolithically-microwave integrated circuits for space
2013 - Krause, Sebastian, Maroldt, Stephan, Zech, Christian, Quay, Rüdiger, Hein, Matthias A.
Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation
2013
2012
back to the year overview- Heijningen, Marc van, Bent, Gijs van der, Rodenburg, M., Vliet, Frank E. van, Quay, Rüdiger
94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology
2012 - Berroth, Manfred, Bräckle, Alexander, Heck, Stefan, Maroldt, Stephan, Quay, Rüdiger
A high gain SiGe-GaN switching power amplifier in the GHz-range
2012 - Quay, Rüdiger, Brückner, Peter, Heijningen, Marc van, Mikulla, Michael, Ambacher, Oliver
Advances on GaN mm-wave power amplifiers to 100 GHz
2012 - Friesicke, Christian, Kühn, Jutta, Brückner, Peter, Quay, Rüdiger, Jacob, Arne F.
An efficient AlGaN/GaN HEMT power amplifier MMIC at K-band
2012 - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Cäsar, Markus
Is GaN the ideal material for space?
2012 - Quay, Rüdiger, Waltereit, Patrick, Benkhelifa, Fouad, Reiner, Richard, Mikulla, Michael
Novel III-N devices: Progess on GaN-based DC-DC converters for space
2012 - Heijningen, Marc van, Rodenburg, M., Vliet, Frank E. van, Massler, Hermann, Tessmann, Axel
W-band power amplifier MMIC with 400 mW output power in 0.1 [my]m AlGaN/GaN technology
2012
2011
back to the year overview- Pemsel-Maier, Sabine, Zierdt, Mike, Haslach, Christoph, Pascht, Andreas, Wiegner, Dirk
900 MHz pulse-width-modulated class-S power amplifier with improved linearity
2011 - Schwantuschke, Dirk, Haupt, Christian, Kiefer, Rudolf, Brückner, Peter, Seelmann-Eggebert, Matthias
A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
2011 - Berroth, Manfred, Bräckle, Alexander, Heck, Stefan, Quay, Rüdiger, Maroldt, Stephan
A high-power dual-gate GaN switching-amplifier in the GHz-range
2011 - Berroth, Manfred, Heck, Stefan, Maroldt, Stephan, Quay, Rüdiger, Bräckle, Alexander
Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
2011 - Quay, Rüdiger, Maroldt, Stephan
Design and modelling challenges for advanced class-S digital transmitters
2011 - Sochor, P.-L., Maroldt, Stephan, Mußer, Markus, Walcher, Herbert, Kalim, Danish
Design and realisation of a 50 W GaN class-E power amplifier
2011 - Pletschen, Wilfried, Kiefer, Rudolf, Mueller, Stefan, Quay, Rüdiger, Mikulla, Michael
Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
2011 - Jüschke, Patrick, Wiegner, Dirk, Luz, Gerhard, Machinal, Robin, Quay, Rüdiger
Multiband doherty RF power amplifier
2011 - Maier, S., Wiegner, Dirk, Zierdt, Mike, Seyfried, Ulrich, Haslach, Christoph
Simultaneous transmission of non-contiguous frequency bands for mobile radio using a pulse-width-modulated switch-mode stage
2011
2010
back to the year overview- Quay, Rüdiger, Waltereit, Patrick
Repeatable submicron AlGaN/GaN devices and MMICs
2010
2000
back to the year overview- Grasser, Tibor, Palankovski, Vassil, Quay, Rüdiger, Selberherr, Siegfried
A global self-heating model for device simulation
2000
1999
back to the year overview- Quay, Rüdiger, Palankovski, Vassil, Reuter, Ralf, Schlechtweg, Michael, Selberherr, Siegfried
III/V device optimization by physics-based S-parameter simulation
1999 - Selberherr, Siegfried, Quay, Rüdiger, Schultheis, Ruediger, Palankovski, Vassil
S-parameter simulation of HBTs on gallium arsenide
1999
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