Publications
Journal Articles
Years: 2025 | 2024 | 2023 | 2022 | 2021 | 2019 | 2018 | 2017 | 2015 | 2014 | 2013 | 2012 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2001
back to the top of all publications2025
- Tummalieh, Ammar, Mittag, Max, Weber, Julian, Yucebas, Damla, Schäfer, Levin, Quay, Rüdiger, Reichel, Christian, Neuhaus, Holger
Impact of string connection and contact defects on electrical current distribution in solar cells and modules: a model validated by magnetic field imaging
2025 Progress in photovoltaics, Wiley, volume: 33, issue: 1, page: 219-235
2024
- Kuliabin, Konstantin, Maurette-Blasini, Cristina, Lozar, Roger, Chartier, Sébastien, Leuther, Arnulf, Quay, Rüdiger
A 100–300 GHz attenuator-based ultrawideband vector modulator
2024 IEEE transactions on terahertz science and technology, IEEE, volume: 14, issue: 3, page: 404-413 - Reiner, Richard, Nambiar, Akshay G., Basler, Michael, Moench, Stefan, Waltereit, Patrick, Quay, Rüdiger
Extraction of the thermal resistance and the thermal capacitance of GaN power HEMTs by using pulsed I–V measurements
2024 IEEE transactions on electron devices, IEEE, volume: 71, issue: 9, page: 5270-5274 - Basler, Michael, Moench, Stefan, Reiner, Richard, Benkhelifa, Fouad, Quay, Rüdiger
Monolithically integrated GaN power stage for more sustainable 48 V DC–DC converters
2024 Electronics, MDPI AG, volume: 13, issue: 7, page: 1351
2023
- Mönch, Stefan, Reiner, Richard, Mansour, Kareem, Waltereit, Patrick, Basler, Michael, Quay, Rüdiger, Molin, Christian, Gebhardt, Sylvia, Bach, David, Binninger, Roland, Bartholomé, Kilian
A 99.74% efficient capacitor-charging converter using partial power processing for electrocalorics
2023 IEEE journal of emerging and selected topics in power electronics, IEEE, volume: 11, issue: 4, page: 4491-4507 - Döring, Philipp, Sinnwell, Matthias, Müller, Stefan, Czap, Heiko, Driad, Rachid, Brückner, Peter, Köhler, Klaus, Kirste, Lutz, Mikulla, Michael, Quay, Rüdiger
A study on the performance of algan/gan hemts regrown on mg-implanted gan layers with low channel thickness
2023 IEEE transactions on electron devices, IEEE, volume: 70, issue: 3, page: 947-952 - Neininger, Philipp, Mikulla, Michael, Döring, Philipp, Dammann, Michael, Thome, Fabian, Krause, Sebastian, Schwantuschke, Dirk, Brückner, Peter, Friesicke, Christian, Quay, Rüdiger
Advances in GaN devices and circuits at higher mm-wave frequencies
2023 e-Prime, Elsevier, volume: 4, page: 100177 - Streicher, Isabel, Leone, Stefano, Manz, Christian, Kirste, Lutz, Prescher, Mario, Waltereit, Patrick, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver
Effect of AlN and AlGaN interlayers on AlScN/GaN heterostructures grown by metal–organic chemical vapor deposition
2023 Crystal growth & design, American Chemical Society (ACS), volume: 23, issue: 2, page: 782-791 - Mönch, Stefan, Basler, Michael, Reiner, Richard, Benkhelifa, Fouad, Döring, Philipp, Sinnwell, Matthias, Müller, Stefan, Mikulla, Michael, Waltereit, Patrick, Quay, Rüdiger
GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI
2023 e-Prime, Elsevier, volume: 4, page: 100171 - Basler, Michael, Deneke, Niklas, Moench, Stefan, Reiner, Richard, Wicht, Bernhard, Quay, Rüdiger
Monolithically integrated GaN gate drivers - a design guide
2023 IEEE open journal of power electronics, IEEE, volume: 4, page: 487-497 - Basler, Michael, Döring, Philipp, Mönch, Stefan, Reiner, Richard, Mikulla, Michael, Quay, Rüdiger
Switching of GaN CAVET with quasi-monolithic integrated HEMT gate driver
2023 IEEE electron device letters :, IEEE, volume: 44, issue: 8, page: 1332-1335 - Moench, Stefan, Reiner, Richard, Basler, Michael, Grieshaber, Daniel, Benkhelifa, Fouad, Waltereit, Patrick, Quay, Rüdiger
Three-phase motor inverter and current sensing GaN power IC
2023 Sensors, MDPI, volume: 23, issue: 14, page: 6512
2022
- Neininger, Philipp, Zink, Martin, John, Laurenz, Friesicke, Christian, Tessmann, Axel, Quay, Rüdiger, Zwick, Thomas
16-Way Ka-band power combiner using novel waveguide transitions
2022 IEEE transactions on microwave theory and techniques, IEEE, volume: 70, issue: 6, page: 3074-3086 - Neininger, Philipp, John, Laurenz, Zink, Martin, Meder, Dirk, Kuri, Michael, Tessmann, Axel, Friesicke, Christian, Mikulla, Michael, Quay, Rüdiger, Zwick, Thomas
Broadband 100-W Ka-band SSPA based on GaN power amplifiers
2022 IEEE transactions on microwave theory and techniques, IEEE, volume: 32, issue: 6, page: 708-711 - Gashi, Bersant, Meier, Dominik, John, Laurenz, Baumann, Benjamin, Rösch, Markus, Tessmann, Axel, Leuther, Arnulf, Quay, Rüdiger
Broadband 400 GHz on-chip antenna with a metastructured ground plane and dielectric resonator
2022 IEEE transactions on antennas and propagation, IEEE, volume: 70, issue: 10, page: 9025-9038
2021
- Basler, Michael, Reiner, Richard, Moench, Stefan, Benkhelifa, Fouad, Döring, Philipp, Waltereit, Patrick, Quay, Rüdiger, Ambacher, Oliver
Building blocks for GaN power integration
2021 IEEE access, IEEE, volume: 9, page: 163122-163137 - Safari Mugisho, Moise, Thian, Mury, Piacibello, Anna, Camarchia, Vittorio, Quay, Rüdiger
Harmonic-injection class-Em/Fn power amplifier with finite DC-feed inductance and isolation circuit
2021 IEEE transactions on microwave theory and techniques, IEEE, volume: 69, issue: 7, page: 3319-3334 - Mönch, Stefan, Reiner, Richard, Waltereit, Patrick, Benkhelifa, Fouad, Hückelheim, Jan, Meder, Dirk, Zink, Martin, Kaden, Thomas A., Noll, Stefan, Mansfeld, Sebastian, Mingirulli, Nicola, Quay, Rüdiger, Kallfass, Ingmar
PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors
2021 IEEE transactions on power electronics, IEEE, volume: 36, issue: 1, page: 83-86
2019
- Gerrer, Thomas, Czap, Heiko, Maier, Thomas, Benkhelifa, Fouad, Müller, Stefan G., Nebel, Christoph E., Waltereit, Patrick, Quay, Rüdiger, Cimalla, Volker
3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond
2019 AIP advances, AIP Publishing, volume: 9, issue: 12, page: 125106 - Gerrer, Thomas, Graff, Andreas, Simon-Najasek, Michel, Czap, Heiko, Maier, Thomas, Benkhelifa, Fouad, Müller, Stefan G., Nebel, Christoph E., Waltereit, Patrick, Quay, Rüdiger, Cimalla, Volker
Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers
2019 Applied physics letters, American Inst. of Physics, volume: 114, issue: 25, page: 252103
2018
- Brückner, Peter, Dammann, Michael, Baeumler, Martina, Kemmer, Tobias, Konstanzer, Helmer, Graff, Andreas, Simon-Najasek, Michel, Quay, Rüdiger
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
2018 Microelectronics reliability, Elsevier BV, volume: 88-90, page: 385-388 - Quay, Rüdiger, Schwantuschke, Dirk, Ture, Erdin, Friesicke, Christian, Krause, Sebastian, Breuer, Steffen, Brückner, Peter, Raay, Friedbert van, Müller, Stefan, Godejohann, Birte-Julia
High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
2018 Physica status solidi / A, Applied research, Wiley, volume: 215, issue: 9, page: 1700655 - Leone, Stefano, Benkhelifa, Fouad, Kirste, Lutz, Manz, Christian, Müller, Stefan G., Stadelmann, Tim, Quay, Rüdiger
Suppression of iron memory effect in GaN epitaxial layers
2018 Physica status solidi / B, Basic research, Wiley, volume: 255, issue: 5, page: 1700377
2017
- Amirpour, Raul, Darraji, Ramzi, Ghannouchi, Fadhel, Quay, Rüdiger
Enhancement of the broadband efficiency of a Class-J power amplifier with varactor-based dynamic load modulation
2017 IEEE microwave and wireless components letters, IEEE, volume: 27, issue: 2, page: 180-182 - Huber, Thomas, Quay, Rüdiger, Bösch, Wolfgang
New concept for power compression improvement of GaN cascodes in broadband power amplifiers
2017 IEEE microwave and wireless components letters, IEEE, volume: 27, issue: 6, page: 590-592 - Dammann, Michael, Baeumler, Martina, Polyakov, Vladimir, Brückner, Peter, Konstanzer, Helmer, Quay, Rüdiger, Mikulla, Michael, Graff, Andreas, Simon, Michel
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
2017 Microelectronics reliability, Elsevier BV, volume: 76-77, page: 292-297
2015
- Dammann, Michael, Baeumler, Martina, Brückner, Peter, Bronner, Wolfgang, Maroldt, Stephan, Konstanzer, Helmer, Wespel, Matthias, Quay, Rüdiger, Mikulla, Michael, Graff, Andreas, Lorenzini, Martino, Fagerlind, Martin, Wel, Paul J. van der, Rödle, Thomas
Degradation of 0.25 μm GaN HEMTs under high temperature stress test
2015 Microelectronics reliability, Elsevier BV, volume: 55, issue: 9-10, page: 1667-1671 - Friesicke, Christian, Jacob, Arne F., Quay, Rüdiger
The resistive-reactive class-J power amplifier mode
2015 IEEE microwave and wireless components letters, IEEE, volume: 25, issue: 10, page: 666-668
2014
- Figur, Sascha A., Raay, Friedbert van, Quay, Rüdiger, Vietzorreck, Larissa, Ziegler, Volker
RF-MEMS multi-mode-matching networks for GaN power transistors
2014 International journal of microwave and wireless technologies, Cambridge University Press, volume: 6, issue: 5, page: 447-458 - Figur, Sascha A., Raay, Friedbert van, Quay, Rüdiger, Lohmiller, Peter, Vietzorreck, Larissa, Ziegler, Volker
RF-MEMS variable matching networks and switches for multi-band and multi-mode GaN power amplifiers
2014 International journal of microwave and wireless technologies, Cambridge University Press, volume: 6, issue: 3-4, page: 265-276 - Emrick, Rudy, Cruz, Pedro, Carvalho, Nuno B., Gao, Steven, Quay, Rüdiger, Waltereit, Patrick
The sky's the limit: key technology and market trends in satellite communications
2014 IEEE microwave magazine, IEEE, volume: 15, issue: 2, page: 65-78
2013
- Figur, Sascha A., Vietzorreck, Larissa, Raay, Friedbert van, Quay, Rüdiger, Ziegler, Volker
Simulation of RF MEMS based matching networks and a single pole double throw switch for Multiband T/R Modules
2013 Advances in radio science, Copernicus GmbH, volume: 11, page: 197-206 - Schmid, Ulf, Sledzik, Hardy, Schuh, Patrick, Oppermann, Martin, Seelmann-Eggebert, Matthias, Brückner, Peter, Schroth, Jörg, Raay, Friedbert van, Quay, Rüdiger
Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications
2013 IEEE transactions on microwave theory and techniques, IEEE, volume: 61, issue: 8, page: 3043-3051
2012
- Schwantuschke, Dirk, Haupt, Christian, Kiefer, Rudolf, Brückner, Peter, Seelmann-Eggebert, Matthias, Tessmann, Axel, Mikulla, Michael, Kallfass, Ingmar, Quay, Rüdiger
A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
2012 International journal of microwave and wireless technologies, Cambridge University Press, volume: 4, issue: 3, page: 267-274 - Quay, Rüdiger, Kissinger, Dietmar
Microwave and millimeter wave integrated circuits MTT-6: the RF core chips of the 21st century
2012 IEEE microwave magazine, IEEE, volume: 13, issue: 6, page: 24-25, 141 - Vitanov, Stanislav, Palankovski, Vassil, Maroldt, Stephan, Quay, Rüdiger, Murad, Saad K., Rödle, Thomas, Selberherr, Siegfried
Physics-based modeling of GaN HEMTs
2012 IRE transactions on electron devices, IEEE, volume: 59, issue: 3, page: 685-693 - Carrubba, Vincenzo, Akmal, Muhammad, Quay, Rüdiger, Lees, Jonathan, Cripps, Steve C., Tasker, Paul J., Benedikt, Johannes
The continuous inverse class-F mode with resistive second-harmonic impedance
2012 IEEE transactions on microwave theory and techniques, IEEE, volume: 60, issue: 6, Pt. 2, page: 1928-1936
2010
- Schmid, Ulf, Reber, Rolf, Chartier, Sébastien, Widmer, Kristina, Oppermann, Martin, Heinrich, Wolfgang, Meliani, Chafik, Quay, Rüdiger, Maroldt, Stephan
GaN devices for communication applications: evolution of amplifier architectures
2010 International journal of microwave and wireless technologies, Cambridge University Press, volume: 2, issue: 1, page: 85-93 - Vitanov, Stanislav, Palankovski, Vassil, Maroldt, Stephan, Quay, Rüdiger
High-temperature modeling of AlGaN/GaN HEMTs
2010 Solid-state electronics, Elsevier, volume: 54, issue: 10, page: 1105-1112 - Aidam, Rolf, Waltereit, Patrick, Kirste, Lutz, Dammann, Michael, Quay, Rüdiger
Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
2010 Physica status solidi. A, Applied research, Wiley, volume: 207, issue: 6, page: 1450-1454
2009
- Sun, Haifeng, Benedickter, Hansruedi, Bolognesi, Colombo R., Feltin, Eric, Gonschorek, Marcus, Grandjean, Nicolas, Carlin, Jean-François, Maier, Thomas, Quay, Rüdiger, Alt, Andreas
102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz
2009 IEEE electron device letters, IEEE, volume: 30, issue: 8, page: 796-798 - Quay, Rüdiger, Maroldt, Stephan, Haupt, Christian, Heijningen, Marc van, Tessmann, Axel
Gallium nitride MMICs for mm-wave power operation
2009 Frequenz, De Gruyter, volume: 63, issue: 3-4, page: 51-54 - Köhler, Klaus, Mueller, Stefan, Waltereit, Patrick, Kirste, Lutz, Menner, Hanspeter, Bronner, Wolfgang, Quay, Rüdiger
Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Growth and electrical properties of AlxGa1−xN/GaN heterostructures
2009 Physica status solidi. A, Applied research, Wiley, volume: 206, issue: 11, page: 2652-2657 - Dammann, Michael, Pletschen, Wilfried, Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Mueller, Stefan, Mikulla, Michael, Ambacher, Oliver, Wel, Paul J. van der, Murad, Saad K., Rödle, Thomas, Behtash, Reza, Bourgeois, Franck, Riepe, Klaus J., Fagerlind, Martin, Sveinbjörnsson, Einar Ö.
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
2009 Microelectronics reliability, Elsevier BV, volume: 49, issue: 5, page: 474-477 - Schuh, Patrick, Sledzik, Hardy, Reber, Rolf, Fleckenstein, Andreas, Leberer, Ralf, Oppermann, Martin, Quay, Rüdiger, Seelmann-Eggebert, Matthias, Kiefer, Rudolf, Mikulla, Michael, Raay, Friedbert van
X-band T/R-module front-end based on GaN MMICs
2009 International journal of microwave and wireless technologies, Cambridge University Press, volume: 1, issue: 4, page: 387-394
2008
- Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Mueller, Stefan, Kiefer, Rudolf, Raynor, Brian, Mikulla, Michael, Weimann, Gunter
High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
2008 Physica status solidi. A, Applied research, Wiley, volume: 205, issue: 5, page: 1078-1080
2007
- Seelmann-Eggebert, Matthias, Merkle, Thomas, Raay, Friedbert van, Quay, Rüdiger, Schlechtweg, Michael
A systematic state-space approach to large-signal transistor modeling
2007 IEEE transactions on microwave theory and techniques, IEEE, volume: 55, issue: 2, page: 195-206
2006
- Quay, Rüdiger, Kiefer, R., Raay, Friedbert van, Reiner, Richard, Kappeler, Otmar, Mueller, Stefan, Dammann, Michael, Bronner, Wolfgang, Mikulla, Michael, Schlechtweg, Michael, Wiegner, Dirk, Seyfried, Ulrich, Templ, Wolfgang, Weimann, Gunter
GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
2006 Physica status solidi. C, Current topics in solid state physics, Wiley, volume: 3, issue: 3, page: 473-477 - Makon, Robert Elvis, Driad, Rachid, Schneider, Karl, Ludwig, Manfred, Aidam, Rolf, Quay, Rüdiger, Schlechtweg, Michael, Weimann, Gunter
InP DHBT-nased monolithically integrated CDR/DEMUX IC operating at 80 Gbit/s
2006 IEEE Journal of Solid-State Circuits, IEEE, volume: 41, issue: 10, page: 2215-2223 - Kirste, Lutz, Mueller, Stefan, Kiefer, Rudolf, Quay, Rüdiger, Köhler, K., Herres, Nikolaus
X-ray topographic imaging of (Al, Ga)N/GaN based electronic device structures on SiC
2006 Applied surface science, Elsevier, volume: 253, issue: 1, page: 209-213
2005
- Raay, Friedbert van, Quay, Rüdiger, Kiefer, R., Benkhelifa, Fouad, Raynor, Brian, Pletschen, Wilfried, Kuri, Michael, Massler, Hermann, Mueller, Stefan, Dammann, Michael, Mikulla, Michael, Schlechtweg, Michael, Weimann, Gunter
A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
2005 IEEE microwave and guided wave letters, IEEE, volume: 15, issue: 7, page: 460-462 - Schneider, Karl, Driad, Rachid, Makon, Robert Elvis, Massler, Hermann, Ludwig, Manfred, Quay, Rüdiger, Schlechtweg, Michael, Weimann, Gunter
Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation
2005 IEEE transactions on microwave theory and techniques, IEEE, volume: 53, issue: 11, page: 3378-3387 - Makon, Robert Elvis, Driad, Rachid, Schneider, Karl, Massler, Hermann, Aidam, Rolf, Quay, Rüdiger, Schlechtweg, Michael, Weimann, Gunter
Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz
2005 Electronics letters, Institution of Engineering and Technology (IET), volume: 41, issue: 17, page: 961-963 - Mueller, Stefan, Köhler, Klaus, Kiefer, R., Quay, Rüdiger, Baeumler, Martina, Kirste, Lutz
Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
2005 Physica status solidi. C, Current topics in solid state physics, Wiley, volume: 2, issue: 7, page: 2639-2642 - Makon, Robert Elvis, Lang, Manfred, Driad, Rachid, Schneider, Karl, Ludwig, Manfred, Aidam, Rolf, Quay, Rüdiger, Schlechtweg, Michael, Weimann, Gunter
Over 80 Gbit∕s 2:1 multiplexer and low power selector ICs using InP∕InGaAs DHBTs
2005 Electronics Letters, Institution of Engineering and Technology (IET), volume: 41, issue: 11, page: 644-646
2004
- Dammann, Michael, Leuther, Arnulf, Quay, Rüdiger, Meng, M., Konstanzer, Helmer, Jantz, Wolfgang, Mikulla, Michael
Reliability of 70 nm metamorphic HEMTs
2004 Microelectronics reliability, Elsevier BV, volume: 44, issue: 6, page: 939-943
2003
- Bessemoulin, Alex, Quay, Rüdiger, Ramberger, Suitbert, Massler, Hermann, Schlechtweg, Michael
A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE
2003 IEEE journal of solid state circuits, IEEE, volume: 38, issue: 9, page: 1433-1437 - Quay, Rüdiger, Weimann, Gunter
AlGaN/GaN HEMTs on SiC for high power broadband applications up to 40 GHz
2003 Elektrotechnik und Informationstechnik, Springer, volume: 120, issue: 3, page: 75-78 - Kiefer, Rudolf, Quay, Rüdiger, Mueller, Stefan, Feltgen, Tobias, Raynor, Brian, Schleife, Jeanette, Köhler, Klaus, Massler, Hermann, Ramberger, Suitbert, Raay, Friedbert van, Tessmann, Axel, Mikulla, Michael, Weimann, Gunter
Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
2003 Physica status solidi. A, Applied research, Wiley, volume: 200, issue: 1, page: 191-194
2001
- Quay, Rüdiger, Hess, Karl, Reuter, Ralf, Schlechtweg, Michael, Grave, T., Palankovski, Vassil, Selberherr, Siegfried
Nonlinear electronic transport and device performance of HEMTs
2001 IEEE transactions on electron devices, IEEE, volume: 48, issue: 2, page: 210-217
Book chapters
Years: 2023 | 2016 | 2013 | 2008 | 2004 back to the top of all publications2023
- Quay, Rüdiger
Amplifiers
2023, , - Quay, Rüdiger
Amplifiers
2023, , - Hartnagel, Hans-Ludwig, Quay, Rüdiger, Rohde, Ulrich Lothar, Rudolph, Matthias
Fundamentals of RF and Microwave Techniques and Technologies
2023, , - Quay, Rüdiger
Semiconductors and semiconductor devices and circuits
2023, , - Quay, Rüdiger
Semiconductors and semiconductor devices and circuits
2023, ,
2016
- Quay, Rüdiger
Group III-Nitride microwave monolithically integrated circuits
2016, ,
2013
- Ghione, Giovanni, Bonani, F., Quay, Rüdiger, Kasper, E.
RF and microwave semiconductor technologies
2013, ,
2008
- Quay, Rüdiger
Gallium nitride electronics
2008, ,
2004
- Palankovski, Vassil, Quay, Rüdiger
Analysis and simulation of heterostructure devices
2004, ,
Conference papers
Years: 2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2000 | 1999 back to the top of all publications2024
- Cimbili, Bharath, Bao, Mingquan, Friesicke, Christian, Wagner, Sandrine, Quay, Rüdiger
A 52-to-86GHz V-/E-Band GaN Distributed Combined Power Amplifier with Output Power Beyond 1W and 34GHz Bandwidth
2024 - Maurette-Blasini, Cristina, Schwantuschke, Dirk, Albahrani, Sayed Ali, Brückner, Peter, Kuliabin, Konstantin, Chartier, Sébastien, Quay, Rüdiger
ASM-GaN model for resistive mixer applications at D-band frequencies
2024 - Umbach, Patrick, Thome, Fabian, Leuther, Arnulf, Quay, Rüdiger
Characterization methods for millimeter wave IQ mixers on the example of a planar star mixer
2024 - Safari Mugisho, Moise, Friesicke, Christian, Ayad, Mohammed, Maier, Thomas, Quay, Rüdiger
Harmonic-injection doherty power amplifier: benefits and limitations
2024 - Cimbili, Bharath, Friesicke, Christian, Wagner, Sandrine, Safari Mugisho, Moise, Bao, Mingquan, Quay, Rüdiger
Investigating feeding techniques for High-power and high-efficiency E-band power amplifiers
2024 - Friesicke, Christian, Raay, Friedbert van, Krause, Sebastian, Cimbili, Bharath, Brückner, P., Quay, Rüdiger, Colzani, Alberto, Traversa, Antonio, Fonte, Alessandro
V-band GaN power amplifier MMICs with high power-bandwidth and low gain compression for RF inter-satellite links
2024 - Basler, Michael, Döring, Philipp, Moench, Stefan, Reiner, Richard, Driad, Rachid, Mikulla, Michael, Quay, Rüdiger
Vertical GaN transistor with quasi-monolithically integrated HEMT gate driver and sense-CAVET for current monitoring
2024
2023
- Kuliabin, Konstantin, Maurette-Blasini, Cristina, Lozar, Roger, Chartier, Sébastien, Quay, Rüdiger
A 220-300 GHz vector modulator in 35 nm GaAs mHEMT technology
2023 - Bao, Mingquan, Cimbili, Bharath, Schwantuschke, Dirk, Andersson, Kristoffer, Brückner, P., Quay, Rüdiger, Hansryd, Jonas
A 63-73 GHz GaN power amplifier with a compact power combiner
2023
2022
- Samis, Stanislav, Friesicke, Christian, Maier, Thomas, Quay, Rüdiger, Jacob, Arne F.
A 41.5 dBm broadband AlGaN/GaN HEMT balanced power amplifier at K-band
2022 - Moench, Stefan, Mansour, Kareem, Reiner, Richard, Basler, Michael, Waltereit, Patrick, Quay, Rüdiger, Molin, Christian, Gebhardt, Sylvia, Bach, David, Binninger, Roland, Bartholomé, Kilian
A GaN-based DC-DC converter with zero voltage switching and hysteretic current control for 99% efficient bidirectional charging of electrocaloric capacitive loads
2022 - Maurette-Blasini, Cristina, Kuliabin, Konstantin, Chartier, Sébastien, Quay, Rüdiger
An H-Band mHEMT-based millimeter-wave true-time delay MMIC
2022 - Safari Mugisho, Moise, Thian, Mury, Piacibello, Anna, Camarchia, Vittorio, Quay, Rüdiger
Bandwidth and power back-off performances of a class-EM/F3Power amplifier
2022 - Reiner, Richard, Moench, Stefan, Waltereit, Patrick, Benkhelifa, Fouad, Basler, Michael, Mikulla, Michael, Quay, Rüdiger
Design and characterization of an interleaved GaN half-bridge IC with matrix layout
2022 - Ture, Erdin, Thome, Fabian, Schwantuschke, Dirk, Mikulla, Michael, Quay, Rüdiger
E-band ultra-low-noise (4.5 dB) and high-power (27 dBm) GaN T/R front-end MMIC
2022 - Basler, Michael, Reiner, Richard, Moench, Stefan, Waltereit, Patrick, Quay, Rüdiger
Function blocks of a highly-integrated all-in-GaN power IC for DC-DC conversion
2022 - Moench, Stefan, Reiner, Richard, Mansour, Kareem, Basler, Michael, Waltereit, Patrick, Quay, Rüdiger, Bartholomé, Kilian
GaN power converter applied to electrocaloric heat pump prototype and carnot cycle
2022 - Mugisho, Moise Safari, Maity, Saikat Kumar, Friesicke, Christian, Quay, Rüdiger
Harmonic-injection doherty power amplifiers with a high small-signal gain
2022
2021
- Mönch, Stefan, Reiner, Richard, Benkhelifa, Fouad, Basler, Michael, Waltereit, Patrick, Quay, Rüdiger
A three-phase GaN-on-Si inverter IC for low-voltage motor drives
2021 - Mul, Dieuwert P. N., Bootsman, Rob J., Bruinsma, Quinten, Shen, Yiyu, Krause, Sebastian, Pelk, Marco J., Heeres, Rob M., Pires, Sergio, Alavi, Morteza, Vreede, Leo C. N. de, Quay, Rüdiger, Rijs, Fred van
Efficiency and linearity of digital "Class-C like" transmitters
2021
2020
- Neininger, Philipp, Amirpour, Raul, John, Laurenz, Friesicke, Christian, Quay, Rüdiger, Zwick, Thomas
A phase shifter with integrated PA MMIC for Ka-Band frequencies
2020 - Jacob, Arne F., Samis, Stanislav, Friesicke, Christian, Quay, Rüdiger, Maier, Thomas
Broadband high-efficiency power amplifiers in 150 nm AlGaN/GaN technology at Ka-band
2020 - Jacob, Arne F., Samis, Stanislav, Friesicke, Christian, Lozar, Roger, Brückner, Peter, Quay, Rüdiger, Maier, Thomas
Study of power amplifier harmonic output termination for two AlGaN/GaN technologies at K-/Ka-band
2020
2019
- Hodges, Jason, Schwantuschke, Dirk, Raay, Friedbert van, Brückner, Peter, Quay, Rüdiger, Khandelwal, Sourabh
Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
2019 - Quay, Rüdiger, Dammann, Michael, Kemmer, Tobias, Brückner, Peter, Cwiklinski, Maciej, Schwantuschke, Dirk, Krause, Sebastian, Leone, Stefano, Mikulla, Michael
Deep submicron III-N HEMTs – technological development and reliability
2019 - Neininger, Philipp, John, Laurenz, Brückner, Peter, Friesicke, Christian, Quay, Rüdiger, Zwick, Thomas
Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
2019 - Krause, Sebastian, Brückner, Peter, Dammann, Michael, Quay, Rüdiger
High-Power-Density AlGaN/GaN Technology for 100-V Operation at L-Band Frequencies
2019
2018
- Jacob, Arne F., Quay, Rüdiger, Maier, Thomas, Samis, Stanislav, Friesicke, Christian, Feuerschütz, Philip, Lozar, Roger, Brückner, Peter
A 5 W AlGaN/GaN power amplifier MMIC for 25–27 GHz downlink applications
2018 - Weber, Rainer, Cwiklinski, Maciej, Wagner, Sandrine, Lozar, Roger, Massler, Hermann, Brückner, Peter, Quay, Rüdiger
A beyond 110 GHz GaN cascode low-noise mmplifier with 20.3 dBm output power
2018 - Schwantuschke, Dirk, Brückner, Peter, Amirpour, Raul, Tessmann, Axel, Kuri, Michael, Riessle, Markus, Massler, Hermann, Quay, Rüdiger
Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
2018 - Cwiklinski, Maciej, Friesicke, Christian, Schwantuschke, Dirk, Lozar, Roger, Wagner, Sandrine, Brückner, Peter, Massler, Hermann, Quay, Rüdiger
First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
2018 - Leone, Stefano, Godejohann, Birte-Julia, Brückner, Peter, Kirste, Lutz, Manz, Christian, Swoboda, Marko, Beyer, Christian, Richter, Jan, Quay, Rüdiger
High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
2018 - Neininger, Philipp, Meder, Dirk, John, Laurenz, Friesicke, Christian, Zwick, Thomas, Quay, Rüdiger
Investigation of high-efficiency hybrid power combining for Ka-band frequencies
2018 - Brückner, Peter, Dammann, Michael, Quay, Rüdiger
Investigation of processing modules to establish a mm-wave foundry process for space applications
2018 - Raay, Friedbert van, Schwantuschke, Dirk, Leuther, Arnulf, Brückner, Peter, Peschel, Detlef, Quay, Rüdiger, Schlechtweg, Michael
Low-frequency dispersion and state dependency in modem microwave III-V HEMTs
2018 - Waltereit, Patrick, Reiner, Richard, Weiss, Beatrix, Moench, Stefan, Müller, Stefan, Czap, Heiko, Wespel, Matthias, Dammann, Michael, Kirste, Lutz, Quay, Rüdiger
Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
2018 - Pereira, Aaron, Al-Sarawi, Said, Weste, Neil, Abbott, Derek, Carrubba, Vincenzo, Quay, Rüdiger
Performance evaluation of commercial GaN RF HEMTs as hybrid topology power switches
2018 - Feuerschütz, Philip, Friesicke, Christian, Lozar, Roger, Wagner, Sandrine, Maier, Thomas, Brückner, Peter, Quay, Rüdiger, Jacob, Arne F.
Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
2018 - Pereira, Aaron, Al-Sarawi, Said, Weste, Neil, Abbott, Derek, Carrubba, Vincenzo, Kühn, Jutta, Quay, Rüdiger
X-band GaN high power amplifier with integrated power switch for airborne applications
2018 - Schwantuschke, Dirk, Godejohann, Birte-Julia, Brückner, Peter, Tessmann, Axel, Quay, Rüdiger
mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
2018
2017
- Krause, Sebastian, Neininger, Philipp, Friesicke, Christian, Meder, Dirk, Lozar, Roger, Merkle, Thomas, Quay, Rüdiger, Zwick, Thomas
A sequential power amplifier at 3.5 GHz for 5G applications
2017 - Schwantuschke, Dirk, Wagner, Sandrine, Dammann, Michael, Mikulla, Michael, Brückner, Peter, Quay, Rüdiger
Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
2017 - Schwantuschke, Dirk, Quay, Rüdiger, Brückner, Peter, Tessmann, Axel, Ture, Erdin, Dammann, Michael, Waltereit, Patrick
Hetero-integrated GaN MMICs: hot islands in a (silicon) ocean…
2017 - Reiner, Richard, Waltereit, Patrick, Weiß, Beatrix, Mönch, Stefan, Quay, Rüdiger, Ambacher, Oliver
Monolithically integrated GaN-on-Si power circuits
2017 - Bösch, Wolfgang, Huber, Thomas, Quay, Rüdiger
New concept to control the gain of GaN-cascodes in broadband power amplifiers
2017 - Bösch, Wolfgang, Huber, Thomas, Quay, Rüdiger
Noise degradation of cascodes in broadband power amplifiers
2017 - Schwantuschke, Dirk, Quay, Rüdiger, Brückner, Peter, Reiner, Richard, Waltereit, Patrick
Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
2017 - Gerrer, Thomas, Cimalla, Volker, Waltereit, Patrick, Benkelifa, Fouad, Czap, Heiko, Nebel, Christoph E., Maier, Thomas, Quay, Rüdiger, Müller, Stefan
Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
2017
2016
- Feuerschütz, Philip, Friesicke, Christian, Quay, Rüdiger, Jacob, A. F.
A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT
2016 - Rave, Christian, Samis, Stanislav, Friesicke, Christian, Konrath, Willibald, Hirche, Klaus, Schobert, Dennis, Jacob, Arne F., Feuerschütz, Philip, Quay, Rüdiger, Schneider, Michael
Active multi-feed satcom systems with GaN SSPA at K-band
2016 - Zibold, Andreas, Kunzer, Michael, Reiner, Richard, Weiss, Beatrix, Waltereit, Patrick, Quay, Rüdiger, Wagner, Joachim, Ambacher, Oliver
LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers
2016 - Reiner, Richard, Waltereit, Patrick, Weiss, Beatrix, Mönch, Stefan, Wespel, Matthias, Müller, Stefan G., Quay, Rüdiger, Ambacher, Oliver
Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
2016 - Huber, Thomas, Quay, Rüdiger, Bösch, Wolfgang
Multi-decade GaN feedback power amplifiers in common-source and cascode topology
2016 - Klein, Kirill, Hoene, Eckart, Reiner, Richard, Quay, Rüdiger
Study on packaging and driver integration with GaN switches for fast switching
2016
2015
- Kaleem, Saqib, Kühn, Jutta, Quay, Rüdiger, Hein, Matthias A.
A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC
2015 - Marchetti, Mauro, Carrubba, Vincenzo, Maroldt, Stephan, Mußer, Markus, Quay, Rüdiger, Maier, Thomas
Examples of high-speed harmonic load pull investigations of high-efficiency GaN power transistors
2015 - Kaleem, Saqib, Kühn, Jutta, Quay, Rüdiger, Hein, Matthias A.
Microwave monolithic integrated gallium-nitride switches for low static power reconfigurable switch matrix with passive transparent state for power failure redundancy
2015
2014
- Jacob, Arne F., Friesicke, Christian, Quay, Rüdiger
Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band
2014 - Alsharef, Mohamed, Granzner, Ralf, Ture, Erdin, Quay, Rüdiger, Breza, Jan, Schwierz, Frank, Racko, Juraj
Design of GaN tri-gate HEMTs
2014 - Jacob, Arne F., Friesicke, Christian, Quay, Rüdiger
K-band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology
2014 - Pereira, Aaron, Parker, Anthony, Heimlich, Michael, Weste, Neil, Carrubba, Vincenzo, Quay, Rüdiger
X-band high-efficiency GaAs MMIC PA
2014
2013
- Pahl, Philipp, Diebold, Sebastian, Schwantuschke, Dirk, Wagner, Sandrine, Lozar, Roger, Quay, Rüdiger, Kallfass, Ingmar, Zwick, Thomas
A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-Band AlGaN/GaN MMIC
2013 - Pahl, Philipp, Diebold, Sebastian, Schwantuschke, Dirk, Wagner, Sandrine, Lozar, Roger, Quay, Rüdiger, Kallfass, Ingmar, Zwick, Thomas
A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-band AlGaN/GaN MMIC
2013 - Friesicke, Christian, Quay, Rüdiger, Rohrdantz, Benjamin, Jacob, Arne F.
A linear 4W power amplifier at K-band using 250nm AlGaN/GaN HEMTs
2013 - Diebold, Sebastian, Schwantuschke, Dirk, Müller, D., Wagner, Sandrine, Quay, Rüdiger, Zwick, Thomas, Kallfass, Ingmar
AlGaN/GaN-based variable gain amplifiers for W-band operation
2013 - Maroldt, Stephan, Aja Abelan, Beatriz, Raay, Friedbert van, Krause, Sebastian, Brückner, Peter, Quay, Rüdiger
QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
2013 - Figur, Sascha A., Ziegler, Volker, Raay, Friedbert van, Quay, Rüdiger, Vietzorreck, Larissa
RF MEMS variable matching networks for multi-band and multi-mode GaN power amplifiers
2013 - Waltereit, Patrick, Quay, Rüdiger
Recent developments of Gallium Nitride monolithically-microwave integrated circuits for space
2013 - Krause, Sebastian, Maroldt, Stephan, Zech, Christian, Quay, Rüdiger, Hein, Matthias A.
Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation
2013
2012
- Heijningen, Marc van, Bent, Gijs van der, Rodenburg, M., Vliet, Frank E. van, Quay, Rüdiger, Brückner, Peter, Schwantuschke, Dirk, Jukkala, Petri, Närhi, Tapani
94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology
2012 - Berroth, Manfred, Bräckle, Alexander, Heck, Stefan, Maroldt, Stephan, Quay, Rüdiger
A high gain SiGe-GaN switching power amplifier in the GHz-range
2012 - Quay, Rüdiger, Brückner, Peter, Heijningen, Marc van, Mikulla, Michael, Ambacher, Oliver
Advances on GaN mm-wave power amplifiers to 100 GHz
2012 - Friesicke, Christian, Kühn, Jutta, Brückner, Peter, Quay, Rüdiger, Jacob, Arne F.
An efficient AlGaN/GaN HEMT power amplifier MMIC at K-band
2012 - Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Cäsar, Markus, Brückner, Peter, Kiefer, Rudolf, Raay, Friedbert van, Kühn, Jutta, Mußer, Markus, Haupt, Christian, Mikulla, Michael, Ambacher, Oliver, Müller, Stefan G., Reiner, Richard
Is GaN the ideal material for space?
2012 - Quay, Rüdiger, Waltereit, Patrick, Benkhelifa, Fouad, Reiner, Richard, Mikulla, Michael, Ambacher, Oliver
Novel III-N devices: Progess on GaN-based DC-DC converters for space
2012 - Heijningen, Marc van, Rodenburg, M., Vliet, Frank E. van, Massler, Hermann, Tessmann, Axel, Brückner, Peter, Mueller, Stefan, Schwantuschke, Dirk, Quay, Rüdiger, Närhi, Tapani
W-band power amplifier MMIC with 400 mW output power in 0.1 [my]m AlGaN/GaN technology
2012
2011
- Pemsel-Maier, Sabine, Zierdt, Mike, Haslach, Christoph, Pascht, Andreas, Wiegner, Dirk, Seyfried, Ulrich, Maroldt, Stephan, Quay, Rüdiger, Kuebart, Wolfgang
900 MHz pulse-width-modulated class-S power amplifier with improved linearity
2011 - Schwantuschke, Dirk, Haupt, Christian, Kiefer, Rudolf, Brückner, Peter, Seelmann-Eggebert, Matthias, Mikulla, Michael, Kallfass, Ingmar, Quay, Rüdiger
A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
2011 - Berroth, Manfred, Bräckle, Alexander, Heck, Stefan, Quay, Rüdiger, Maroldt, Stephan
A high-power dual-gate GaN switching-amplifier in the GHz-range
2011 - Berroth, Manfred, Heck, Stefan, Maroldt, Stephan, Quay, Rüdiger, Bräckle, Alexander
Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
2011 - Quay, Rüdiger, Maroldt, Stephan
Design and modelling challenges for advanced class-S digital transmitters
2011 - Sochor, P.-L., Maroldt, Stephan, Mußer, Markus, Walcher, Herbert, Kalim, Danish, Quay, Rüdiger, Negra, Renato
Design and realisation of a 50 W GaN class-E power amplifier
2011 - Pletschen, Wilfried, Kiefer, Rudolf, Mueller, Stefan, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver
Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
2011 - Jüschke, Patrick, Wiegner, Dirk, Luz, Gerhard, Machinal, Robin, Quay, Rüdiger, Pascht, Andreas
Multiband doherty RF power amplifier
2011 - Maier, S., Wiegner, Dirk, Zierdt, Mike, Seyfried, Ulrich, Haslach, Christoph, Pascht, Andreas, Maroldt, Stephan, Quay, Rüdiger
Simultaneous transmission of non-contiguous frequency bands for mobile radio using a pulse-width-modulated switch-mode stage
2011
2010
- Quay, Rüdiger, Waltereit, Patrick
Repeatable submicron AlGaN/GaN devices and MMICs
2010
2000
- Grasser, Tibor, Palankovski, Vassil, Quay, Rüdiger, Selberherr, Siegfried
A global self-heating model for device simulation
2000
1999
- Quay, Rüdiger, Palankovski, Vassil, Reuter, Ralf, Schlechtweg, Michael, Selberherr, Siegfried, Kellner, Walter
III/V device optimization by physics-based S-parameter simulation
1999 - Selberherr, Siegfried, Quay, Rüdiger, Schultheis, Ruediger, Palankovski, Vassil
S-parameter simulation of HBTs on gallium arsenide
1999
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